2SK1315(L)(S), 2SK1316(L)(S) Silicon N-Channel MOS FET November 1996 Application High speed power switching Features x x x x x Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter and motor driver Outline LDPAK 4 4 1 2 1 2 3 3 D G S 1. Gate 2. Drain 3. Source 4. Drain 2SK1315(L)(S), 2SK1316(L)(S) Absolute Maximum Ratings (Ta = 25qC) Item Drain to source voltage 2SK1315 Symbol Ratings Unit VDSS 450 V 2SK1316 500 Gate to source voltage VGSS Drain current ID Drain peak current ID(pulse)* Body to drain diode reverse drain current IDR 2 1 r30 V 8 A 32 A 8 A 60 W Channel dissipation Pch* Channel temperature Tch 150 Storage temperature Tstg -55 to +150 Note 2 1. PW d 10 Ps, duty cycle d 1% 2. Value at TC = 25qC qC qC 2SK1315(L)(S), 2SK1316(L)(S) Electrical Characteristics (Ta = 25qC) Item Symbol Min Drain to source 2SK1315 V(BR)DSS 450 breakdown voltage 2SK1316 500 Typ Max Unit Test conditions -- -- V ID = 10 mA, VGS = 0 IG = r100 PA, VDS = 0 Gate to source breakdown voltage V(BR)GSS r30 -- -- V Gate to source leak current IGSS -- -- r10 Zero gate voltage 2SK1315 IDSS -- -- 250 PA PA drain current 2SK1316 Gate to source cutoff voltage VGS = r25 V, VDS = 0 VDS = 360 V, VGS = 0 VDS = 400 V, VGS = 0 VGS(off) 2.0 -- 3.0 V Static Drain to source 2SK1315 RDS(on) -- 0.55 0.7 : ID = 4 A, VGS = 10 V * on state resistance -- 0.60 0.8 2SK1316 ID = 1 mA, VDS = 10 V Forward transfer admittance |yfs| 4.5 7.5 -- S ID = 4 A, VDS = 10 V * Input capacitance Ciss -- 1150 -- pF VDS = 10 V, VGS = 0, Output capacitance Coss -- 340 -- pF f = 1 MHz Reverse transfer capacitance Crss -- 55 -- pF Turn-on delay time td(on) -- 17 -- ns Rise time tr -- 55 -- ns Turn-off delay time td(off) -- 100 -- ns Fall time tf -- 45 -- ns Body to drain diode forward voltage VDF -- 0.9 -- V IF = 8 A, VGS = 0 Body to drain diode reverse recovery time trr -- 350 -- ns IF = 8 A, VGS = 0, diF/dt = 100 A/Ps Note 1 1 ID = 4 A, VGS = 10 V, RL = 7.5 : 1. Pulse test See characteristic curves of 2SK1159, 2SK1160. 3 2SK1315(L)(S), 2SK1316(L)(S) Power vs. Temperature Derating Channel Dissipation Pch (W) 60 40 20 0 4 50 100 Case Temperature TC (C) 150 2SK1315(L)(S), 2SK1316(L)(S) Notice When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without Hitachi's permission. 3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the user's unit according to this document. 4. Circuitry and other examples described herein are meant merely to indicate the characteristics and performance of Hitachi's semiconductor products. Hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd. 6. MEDICAL APPLICATIONS: Hitachi's products are not authorized for use in MEDICAL APPLICATIONS without the written consent of the appropriate officer of Hitachi's sales company. Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi's products are requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL APPLICATIONS. 5