DG189,190,191 3I5s SPDT JFET VFODV+*24 vv F (Fa TIL) (73H) Siliconix . Meas (V' =15V, V- =15V, V,=5V, Ve=0, T,=25C) 7 > HE ai BE Rt (OG 190) r DG190A DG190B 3 moe mot & tt - ; My 00 - se * Be ohime @) e kl mle wR Xx 6 Wg > Va MAXI | | { 3 sma | Vanacoe |b Fi NERO =75! 1 |-75 i | Vv 5 Is=1mA, Vp=7.5V' Te = 25C 18 | 30 50 2 Yps-ON - | 9 z Vin=0.8 or 2.0V Bh fF ik Ea 60 75 2 g 5 co _ Vs=10V, V)=10V : Viv=0.8V or 2.0V V' =10V, ) =20V 0.06 | 1 5 2 : fae Vp=7.8V, Vs=7.8V 0.1 1 5 3 | sore Vs=10V, Vp=~10V nA a ! = s= p= } ; Viy=0.8V or 2.0V = 10V, 7 =~ 20V 100 | 100 i Acie Bas os son [earrie SPR Vp= 7.5V, Vs=7.5V "100 "100 T - TEMPERATURE (C) Vs=10V, Vo=10V : Viw=0.8V 0r2.0V i ys any y =_90y 05 1 5 . a Ty =25C = _ ~ RA -y F > TUSP-Vp, THREMtE (DG190) be Vp=7.5V, Vy=7.5V 06 | 1 5 toy OFF ~ 120 7 Vs=10V, Vp=10V Vin =0.8V or 2.0V Y' =10V, V =20V 100 100 oy ca ea na SE AP Vp= ~7.5V, Vs=7.5V 100 100 Viv=0.8V or 2.0V T,=25C 2 |-0.02! 10 = 10 Zpsions | ; : nA = Vip=Vs=7.5V 8) (ELIE BDA = 200 | 200 = 7 7 - . z I Vin=5V 10 10 7 90 mo |p aesrc ~ an LA . In, Viv=0V 250 | 30 250 70 LL __| Tn Viv=5V 20 20 L By Pe tha Me LH aN In ee Viy=OV 250 250 x 50 - ~ -$6 -35 -15 5 25 45 65 BS 105 125 Loy to . 85 150 180 1 TEMPERATURE ("CI [ by j PIES LS 95 130 150 ns | Cs.ore Vs=BV, fy=0 9 9 focorr) ~BEIFTE (DG 190) Cuore. |f=1MH2 i p=5V, 1s=0 6 6 pF a | Coorr | {00 Yor lv Vo = 200 Bann Cosion: Vp= Vs=0V 14 14 ry . =8V. Vg 20 ~ - ~~ SED Ager TE vo StowNg- wv ae | @ %, OR |R,=750,f=1MHz >50 >50 dB 2 Siliconix | DGiso || 7+ | 06 | 15 0.6 | 15 3 Intersil | DG190 Fly cove any | 5.0 | -2.7 5.0 | 2.7 mA i, ; 31 1 45 31 | 45 Z Ty ~2.0 | 1.0 2.0 | -1.0 =! mG 0.6 1.5 0.6 1.5 3 ! 5.0' -2.7 5.0' ~2.7 on -- Sp VBA fo . mA "28 6 6 105128 fi, ; 3 4.5 | 3.1 4.5 T TEMPERATURE (C) | Ty | 2.0 : 1.0 2.0 .0 316 DG189,190,191 SPDT JFET FPFODP* 24 vy F (FAT) (D3) Siliconix meanest (V =15V, V- =15V, VL=5V, Ve=0, Ta =25C) + > de RES (DG191) : / DG191A DGi91B 5 swe a eo near gle * [exe le mia x|" 3 ips =10mA Vananoo | 80F HOEE =10 15 | 10 15 | V z Ig=1mA, Vp=7.5V T,=28C 35 | 75 100 | 3 7Os0n ly, -o.8or2.0V | _sSATFIRAE SEES 150 150 z : 100 Viv=0-8V 0r2.0 Pct. foo bv 0.05 | 1 8 a T= 25C Vp=7.V, Vg=7.5V 0.07 | 1 i 5 Fi Jscorr Vs=10V, Vp=10V nA 5 Viw=0.8V 0r2.0V | 8 gy y= a0v 100 100 3 10 Sr ao Vp=7.5V, V5=7.5V 100 100 | 1 = TEMPERATURE (C) Vi==0.8V or 2.0V yoy. ay 0.04 | 1 5 AA vF > OR Vo, AEE (DG191) , T,=25C Vpu_78V, Vou7.5V 0.05 | 1 5 | oa DiOFF: 7 Vin=0.8V or 2.00 Pov e ty 100 100 . | SPE ia Vp= 7.5V, Vs=7.5V 100 _ | 100 = 00 Ipmom Vm OBY OF 2.00 T,=25C =2 = 0.03 10 aA SON i yy= Vs=7.5V arreeme | 200: 200 tO tn oe Viv=5V | 40 | ua In a Viv=0V 250' 35 250 Tin sat ee ate Vin=5V 20 | 20 so - Tn (i FE RB Viy=0V S50 950 bo TWA oes nas 18 5 73 45 05 8S 105 12S be ry . | - : 120-250 : : 300 T TEMPERATURE {C} by WIE LBS S mot too 30 | ico ns | Cs.orr Ve=5V, 1)=0 9 9 locore) SmBETFTE (DG191) SRE _ Coorr | 'f=1MHz 3 6 | 6 pF ooo a_i Cps.ox Vp= Vs=0V 4 | 14 i ver etow Ng = tov wu @ [ % | om R,=750, f-1MHe >50 | >50 dB # Siliconix | DG191 | 72> oe fs 3 Intersil DG191 I- i 5 5 AV y= OV RAP mA $ TI Tlisk | ok 45 i 45 | g i 8 _ L I LS 15 ; EF tgs = =} on ZL Viy=SV(@AA as : ib mA J TEMPERATURE (C) Ip . -2 -2