APT26GU30B APT26GU30B TYPICAL PERFORMANCE CURVES 300V POWER MOS 7 IGBT (R) TO-247 The POWER MOS 7(R) IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. * Low Conduction Loss G * SSOA rated C E C * Low Gate Charge G * Ultrafast Tail Current shutoff E MAXIMUM RATINGS Symbol All Ratings: TC = 25C unless otherwise specified. Parameter VCES Collector-Emitter Voltage 300 VGE Gate-Emitter Voltage 20 VGEM Gate-Emitter Voltage Transient 30 IC1 Continuous Collector Current @ TC = 25C 47 IC2 Continuous Collector Current @ TC = 100C 26 ICM Pulsed Collector Current SSOA PD TJ,TSTG TL UNIT APT26GU30B 1 Volts Amps 85 @ TC = 150C 85A @ 300V Switching Safe Operating Area @ TJ = 150C 187 Total Power Dissipation Watts -55 to 150 Operating and Storage Junction Temperature Range C 300 Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. STATIC ELECTRICAL CHARACTERISTICS BVCES Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 250A) 300 VGE(TH) Gate Threshold Voltage VCE(ON) I CES I GES TYP MAX 4.5 6 Collector-Emitter On Voltage (VGE = 15V, I C = 13A, Tj = 25C) 1.5 2.0 Collector-Emitter On Voltage (VGE = 15V, I C = 13A, Tj = 125C) 1.5 3 (VCE = VGE, I C = 1mA, Tj = 25C) Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 25C) 2 Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 125C) 250 2 Gate-Emitter Leakage Current (VGE = 20V) Volts A 2500 100 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com UNIT nA 4-2004 MIN Rev B Characteristic / Test Conditions 050-7459 Symbol APT26GU30B DYNAMIC CHARACTERISTICS Symbol Characteristic Test Conditions 1200 VGE = 0V, VCE = 25V 120 Reverse Transfer Capacitance f = 1 MHz 6 Gate-to-Emitter Plateau Voltage Gate Charge VGE = 15V 7.0 VCE = 150V 8 10 Input Capacitance Coes Output Capacitance Cres VGEP Qge TYP Capacitance Cies Qg MIN Total Gate Charge 3 Gate-Emitter Charge Qgc Gate-Collector ("Miller ") Charge I C = 13A SSOA Switching Safe Operating Area TJ = 150C, R G = 5, VGE = MAX UNIT pF V 37 nC 85 A 15V, L = 100H,VCE = 300V td(on) tr td(off) tf Turn-on Delay Time Current Rise Time Eoff Turn-off Switching Energy td(on) Turn-on Delay Time 48 6 Inductive Switching (125C) VCC = 200V 11 VGE = 15V 70 Turn-off Delay Time 14 I C = 13A Current Fall Time Turn-on Switching Energy (Diode) Eoff Turn-off Switching Energy 5 ns 100 R G = 20 4 Eon2 J 60 Current Rise Time Turn-on Switching Energy TBD TJ = +25C 5 ns 55 R G = 20 4 Turn-on Switching Energy (Diode) Eon1 60 14 I C = 13A Eon2 tf VGE = 15V Current Fall Time Turn-on Switching Energy td(off) 11 Turn-off Delay Time Eon1 tr Inductive Switching (25C) VCC = 200V TBD TJ = +125C 80 J 95 6 THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic MIN TYP MAX RJC Junction to Case (IGBT) 0.67 RJC Junction to Case (DIODE) N/A Package Weight 5.9 WT UNIT C/W gm 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. (See Figure 24.) 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. A Combi device is used for the clamping diode as shown in the Eon2 test circuit. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) 050-7459 Rev B 4-2004 APT Reserves the right to change, without notice, the specifications and information contained herein. APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved. TYPICAL PERFORMANCE CURVES TC = 125C 20 TC = 25C 10 0 FIGURE 1, Output Characteristics(VGE = 15V) 100 TJ = 25C TJ = 125C 0 3 TJ = 25C. 250s PULSE TEST <0.5 % DUTY CYCLE 2.5 IC = 26A 2 IC = 13A 1.5 IC = 6.5A 1 0.5 0 8 10 12 14 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage BVCES, COLLECTOR-TO-EMITTER BREAKDOWN VOLTAGE (NORMALIZED) 6 1.10 1.05 1.00 0.95 0.90 -50 -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, Breakdown Voltage vs. Junction Temperature TC=125C 20 10 14 0 1 2 3 4 VCE, COLLECTER-TO-EMITTER VOLTAGE (V) IC = 13A TJ = 25C VCE = 60V 12 VCE = 150V 10 8 VCE = 240V 6 4 2 0 2 4 6 8 10 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) 20 0 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) TJ = -55C 40 VGE, GATE-TO-EMITTER VOLTAGE (V) 60 TC=25C 30 FIGURE 2, Output Characteristics (VGE = 10V) 16 0 5 10 15 20 25 30 GATE CHARGE (nC) FIGURE 4, Gate Charge 35 40 2.5 IC = 26A 2.0 IC = 13A 1.5 IC = 6.5A 1.0 0.5 VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE 0 -50 -25 0 25 50 75 100 125 TJ, Junction Temperature (C) FIGURE 6, On State Voltage vs Junction Temperature 70 IC, DC COLLECTOR CURRENT(A) IC, COLLECTOR CURRENT (A) 80 TC=-55C 40 0 0 1 2 3 4 VCE, COLLECTER-TO-EMITTER VOLTAGE (V) 250s PULSE TEST <0.5 % DUTY CYCLE 50 60 50 40 30 4-2004 TC = -55C 30 VGE = 10V. 250s PULSE TEST <0.5 % DUTY CYCLE 20 10 0 -50 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 8, DC Collector Current vs Case Temperature Rev B IC, COLLECTOR CURRENT (A) 40 IC, COLLECTOR CURRENT (A) VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE 50 APT26GU30B 60 050-7459 60 tr, RISE TIME (ns) td (OFF), TURN-OFF DELAY TIME (ns) 12 VGE= 15V 10 8 6 4 VCE = 400V TJ = 25C, TJ =125C RG = 20 L = 100 H 2 0 30 20 VCE = 200V RG = 20 L = 100 H 10 100 20 80 15 TJ = 25 or 125C,VGE = 15V 10 RG = 20, L = 100H, VCE = 200V 60 TJ = 25C, VGE = 15V 40 0 5 10 15 20 25 30 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current 250 VCE = 200V VGE = +15V RG = 20 200 TJ = 125C,VGE =15V 150 100 50 TJ = 25C,VGE =15V 0 Eoff, 26A TJ = 125C 200 Eon2, 26A 150 Eoff, 13A 100 Eon2, 13A 50 Eoff, 6.5A Eon2, 6.5A 0 TJ = 125C, VGE = 15V 150 100 50 TJ = 25C, VGE = 15V 250 VCE = 200V VGE = +15V 250 200 5 10 15 20 25 30 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 14, Turn Off Energy Loss vs Collector Current 10 20 30 40 50 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs. Gate Resistance SWITCHING ENERGY LOSSES (J) 300 VCE = 200V VGE = +15V RG = 20 0 5 10 15 20 25 30 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current 0 TJ = 125C, VGE = 15V 20 EOFF, TURN OFF ENERGY LOSS (J) EON2, TURN ON ENERGY LOSS (J) 40 25 250 SWITCHING ENERGY LOSSES (J) VGE =15V,TJ=25C 50 0 5 10 15 20 25 30 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current 4-2004 60 5 10 15 20 25 30 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current 120 RG = 20, L = 100H, VCE = 200V 0 Rev B VGE =15V,TJ=125C 70 5 10 15 20 25 30 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current 30 5 050-7459 APT26GU30B 80 tf, FALL TIME (ns) td(ON), TURN-ON DELAY TIME (ns) 14 VCE = 200V VGE = +15V RG = 20 Eoff,26A 200 150 Eon2,26A 100 Eoff, 13A Eon2,13A 50 Eoff, 6.5A Eon2,6.5A 0 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) FIGURE 16, Switching Energy Losses vs Junction Temperature TYPICAL PERFORMANCE CURVES 1,000 Cies 80 P Coes 100 IC, COLLECTOR CURRENT (A) C, CAPACITANCE ( F) 500 50 10 1 APT26GU30B 100 2,000 Cres 0 10 20 30 40 50 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 17, Capacitance vs Collector-To-Emitter Voltage 60 40 20 0 0 50 100 150 200 250 300 350 VCE, COLLECTOR TO EMITTER VOLTAGE Figure 18, Minimim Switching Safe Operating Area 0.9 0.60 0.50 0.7 0.40 0.5 0.30 Note: PDM ZJC, THERMAL IMPEDANCE (C/W) 0.70 0.3 0.20 t1 t2 0.10 0 Duty Factor D = t1/t2 0.1 10-5 Peak TJ = PDM x ZJC + TC SINGLE PULSE 0.05 10-4 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) Figure 19A, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration 1.0 300 RC MODEL 0.0860 0.0342F 0.432F Case temperature(C) FIGURE 19B, TRANSIENT THERMAL IMPEDANCE MODEL Fmax = min(f max1 , f max 2 ) 50 10 TJ = 125C TC = 75C D = 50 % VCE = 200V RG = 20 5 f max1 = 0.05 t d (on ) + t r + t d(off ) + t f f max 2 = Pdiss - Pcond E on 2 + E off Pdiss = 10 15 20 25 30 35 40 45 IC, COLLECTOR CURRENT (A) Figure 20, Operating Frequency vs Collector Current TJ - TC R JC 4-2004 0.391 100 Rev B Power (watts) 0.00537F 050-7459 0.192 FMAX, OPERATING FREQUENCY (kHz) Junction temp (C) APT26GU30B APT15DS30 Gate Voltage 10% TJ = 125C td(on) IC V CC tr V CE Drain Current 90% 10% 5% A D.U.T. 5% DrainVoltage Switching Energy Figure 21, Inductive Switching Test Circuit Figure 22, Turn-on Switching Waveforms and Definitions VTEST *DRIVER SAME TYPE AS D.U.T. 90% Gate Voltage A td(off) V CE DrainVoltage tf IC 100uH V CLAMP 90% 10% Switching Energy 0 A Drain Current DRIVER* Figure 24, EON1 Test Circuit Figure 23, Turn-off Switching Waveforms and Definitions T0-247 Package Outline 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 15.49 (.610) 16.26 (.640) 6.15 (.242) BSC Collector 4-2004 Rev B 5.38 (.212) 6.20 (.244) 20.80 (.819) 21.46 (.845) 3.50 (.138) 3.81 (.150) 4.50 (.177) Max. 050-7459 B 0.40 (.016) 0.79 (.031) 19.81 (.780) 20.32 (.800) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055) Gate Collector Emitter 2.21 (.087) 2.59 (.102) 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved. D.U.T.