050-7459 Rev B 4-2004
APT26GU30B
TYPICAL PERFORMANCE CURVES
The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs.
Using Punch Through Technology this IGBT is ideal for many high frequency,
high voltage switching applications and has been optimized for high frequency
switchmode power supplies.
• Low Conduction Loss • SSOA rated
• Low Gate Charge
• Ultrafast Tail Current shutoff
MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
STATIC ELECTRICAL CHARACTERISTICS
MIN TYP MAX
300
3 4.5 6
1.5 2.0
1.5
250
2500
±100
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 250µA)
Gate Threshold Voltage (VCE = VGE, IC = 1mA, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 13A, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 13A, Tj = 125°C)
Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 25°C) 2
Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 125°C) 2
Gate-Emitter Leakage Current (VGE = ±20V)
Symbol
BVCES
VGE(TH)
VCE(ON)
ICES
IGES
UNIT
Volts
µA
nA
Symbol
VCES
VGE
VGEM
IC1
IC2
ICM
SSOA
PD
TJ,TSTG
TL
APT26GU30B
300
±20
±30
47
26
85
85A @ 300V
187
-55 to 150
300
UNIT
Volts
Amps
Watts
°C
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Gate-Emitter Voltage Transient
Continuous Collector Current @ TC = 25°C
Continuous Collector Current @ TC = 100°C
Pulsed Collector Current 1 @ TC = 150°C
Switching Safe Operating Area @ TJ = 150°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
G
C
E
POWER MOS 7® IGBT
TO-247
GCE
APT26GU30B
300V
050-7459 Rev B 4-2004
APT26GU30B
DYNAMIC CHARACTERISTICS
Symbol
Cies
Coes
Cres
VGEP
Qg
Qge
Qgc
SSOA
td(on)
tr
td(off)
tf
Eon1
Eon2
Eoff
td(on)
tr
td(off)
tf
Eon1
Eon2
Eoff
Test Conditions
Capacitance
VGE = 0V, VCE = 25V
f = 1 MHz
Gate Charge
VGE = 15V
VCE = 150V
IC = 13A
TJ = 150°C, RG = 5Ω, VGE =
15V, L = 100µH,VCE = 300V
Inductive Switching (25°C)
VCC = 200V
VGE = 15V
IC = 13A
RG = 20Ω
TJ = +25°C
Inductive Switching (125°C)
VCC = 200V
VGE = 15V
IC = 13A
RG = 20Ω
TJ = +125°C
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate-to-Emitter Plateau Voltage
Total Gate Charge 3
Gate-Emitter Charge
Gate-Collector ("Miller") Charge
Switching Safe Operating Area
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy 4
Turn-on Switching Energy (Diode) 5
Turn-off Switching Energy 6
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy 4
Turn-on Switching Energy (Diode) 5
Turn-off Switching Energy 6
MIN TYP MAX
1200
120
6
7.0
37
8
10
85
11
14
60
55
TBD
48
60
11
14
70
100
TBD
80
95
UNIT
pF
V
nC
A
ns
µJ
ns
µJ
UNIT
°C/W
gm
MIN TYP MAX
0.67
N/A
5.9
Characteristic
Junction to Case (IGBT)
Junction to Case (DIODE)
Package Weight
Symbol
RΘJC
RΘJC
WT
THERMAL AND MECHANICAL CHARACTERISTICS
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, Ices includes both IGBT and FRED leakages
3 See MIL-STD-750 Method 3471.
4E
on1 is the clamped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current
adding to the IGBT turn-on loss. (See Figure 24.)
5E
on2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
loss. A Combi device is used for the clamping diode as shown in the Eon2 test circuit. (See Figures 21, 22.)
6E
off is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
APT Reserves the right to change, without notice, the specifications and information contained herein.
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
050-7459 Rev B 4-2004
APT26GU30B
TYPICAL PERFORMANCE CURVES
VCE, COLLECTER-TO-EMITTER VOLTAGE (V) VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics(VGE = 15V) FIGURE 2, Output Characteristics (VGE = 10V)
VGE, GATE-TO-EMITTER VOLTAGE (V) GATE CHARGE (nC)
FIGURE 3, Transfer Characteristics FIGURE 4, Gate Charge
VGE, GATE-TO-EMITTER VOLTAGE (V) TJ, Junction Temperature (°C)
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage FIGURE 6, On State Voltage vs Junction Temperature
TJ, JUNCTION TEMPERATURE (°C) TC, CASE TEMPERATURE (°C)
FIGURE 7, Breakdown Voltage vs. Junction Temperature FIGURE 8, DC Collector Current vs Case Temperature
BVCES, COLLECTOR-TO-EMITTER BREAKDOWN VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
VOLTAGE (NORMALIZED)
IC,
DC COLLECTOR CURRENT(A) VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) VGE, GATE-TO-EMITTER VOLTAGE (V) IC, COLLECTOR CURRENT (A)
01 2 34 01 2 34
0 2 4 6 8 10 0 5 10152025303540
6 8 10 12 14 16 -50 -25 0 25 50 75 100 125
-50 -25 0 25 50 75 100 125 -50 -25 0 25 50 75 100 125 150
TJ = 25°C.
250µs PULSE TEST
<0.5 % DUTY CYCLE
TC=-55°C
TC=125°C
TC=25°C
VCE = 240V
VCE = 150V
VCE = 60V
VGE = 10V.
250µs PULSE TEST
<0.5 % DUTY CYCLE
V
GE = 15V.
250µs PULSE TEST
<0.5 % DUTY CYCLE
VGE = 15V.
250µs PULSE TEST
<0.5 % DUTY CYCLE
IC = 13A
TJ = 25°C
TJ = 25°C
TJ = -55°C
TJ = 125°C
TC = -55°C
TC = 25°C
TC = 125°C
250µs PULSE TEST
<0.5 % DUTY CYCLE
IC = 6.5A
IC = 13A
IC = 26A
IC = 26A
IC = 13A
IC = 6.5A
60
50
40
30
20
10
0
100
80
60
40
20
0
3
2.5
2
1.5
1
0.5
0
1.10
1.05
1.00
0.95
0.90
60
50
40
30
20
10
0
16
14
12
10
8
6
4
2
0
2.5
2.0
1.5
1.0
0.5
0
70
60
50
40
30
20
10
0
050-7459 Rev B 4-2004
APT26GU30B
VCE = 200V
RG
= 20Ω
L = 100 µH
VGE= 15V
SWITCHING ENERGY LOSSES (µJ) EON2, TURN ON ENERGY LOSS (µJ) tr, RISE TIME (ns) td(ON), TURN-ON DELAY TIME (ns)
SWITCHING ENERGY LOSSES (µJ) EOFF, TURN OFF ENERGY LOSS (µJ) tf, FALL TIME (ns) td (OFF), TURN-OFF DELAY TIME (ns)
VGE =15V,TJ=25°C
TJ = 125°C, VGE = 15V
TJ = 125°C,VGE
=15V
TJ = 25°C, VGE = 15V
TJ = 25°C,VGE
=15V
TJ = 25 or 125°C,VGE = 15V
TJ = 125°C, VGE = 15V
TJ = 25°C, VGE = 15V
5 10 15 20 25 30 5 10 15 20 25 30
5 10 15 20 25 30 5 10 15 20 25 30
5 10 15 20 25 30 5 10 15 20 25 30
0 10 20 30 40 50 0 25 50 75 100 125
ICE, COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current FIGURE 10, Turn-Off Delay Time vs Collector Current
ICE, COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current FIGURE 12, Current Fall Time vs Collector Current
ICE, COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current FIGURE 14, Turn Off Energy Loss vs Collector Current
RG, GATE RESISTANCE (OHMS) TJ, JUNCTION TEMPERATURE (°C)
FIGURE 15, Switching Energy Losses vs. Gate Resistance FIGURE 16, Switching Energy Losses vs Junction Temperature
80
70
60
50
40
30
20
10
0
120
100
80
60
40
20
0
250
200
150
100
50
0
250
200
150
100
50
0
Eon2,
26A
Eoff, 26A
Eon2, 13A
Eoff, 13A
Eon2, 6.5A
Eoff, 6.5A
VCE = 200V
VGE = +15V
TJ = 125°C
14
12
10
8
6
4
2
0
30
25
20
15
10
5
0
250
200
150
100
50
0
300
250
200
150
100
50
0
VCE = 200V
VGE = +15V
RG = 20ΩΩ
ΩΩ
Ω
Eon2,26A
Eoff,26A
Eon2,13A
Eoff,
13A
Eon2,6.5A
Eoff,
6.5A
VCE = 400V
TJ = 25°C, TJ =125°C
RG
= 20Ω
L = 100 µH
V GE =15V,TJ=125°C
RG = 20Ω, L = 100µH, VCE = 200V
RG = 20Ω, L = 100µH, VCE = 200V
VCE = 200V
VGE = +15V
RG = 20ΩΩ
ΩΩ
Ω
VCE = 200V
VGE = +15V
RG = 20ΩΩ
ΩΩ
Ω
050-7459 Rev B 4-2004
APT26GU30B
TYPICAL PERFORMANCE CURVES
5 10 152025 30 35 4045
300
100
50
10
2,000
1,000
500
100
50
10
1
100
80
60
40
20
0
C, CAPACITANCE (PF)
IC, COLLECTOR CURRENT (A)
FMAX, OPERATING FREQUENCY (kHz)
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) VCE, COLLECTOR TO EMITTER VOLTAGE
Figure 17, Capacitance vs Collector-To-Emitter Voltage Figure 18, Minimim Switching Safe Operating Area
0 10 20 30 40 50 0 50 100 150 200 250 300 350
IC, COLLECTOR CURRENT (A)
Figure 20, Operating Frequency vs Collector Current
TJ = 125°C
TC = 75°C
D = 50 %
VCE = 200V
RG = 20Ω
Cies
Coes
max max 1 max 2
max1
d(on) r d(off ) f
diss cond
max 2
on2 off
JC
diss
JC
Fmin(f,f)
0.05
fttt t
PP
fEE
TT
PRθ
=
=++ +
−
=+
−
=
Cres
FIGURE 19B, TRANSIENT THERMAL IMPEDANCE MODEL
0.70
0.60
0.50
0.40
0.30
0.20
0.10
0
Note:
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
t1
t2
PDM
ZθJC, THERMAL IMPEDANCE (°C/W)
0.3
0.9
0.7
0.1
0.05
0.5
SINGLE PULSE
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19A, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
10-5 10-4 10-3 10-2 10-1 1.0
0.192
0.391
0.0860
0.00537F
0.0342F
0.432F
Power
(watts)
Junction
temp (°C)
RC MODEL
Case temperature(°C)
050-7459 Rev B 4-2004
APT26GU30B
T0-247 Package Outline
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
6.15 (.242) BSC
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
20.80 (.819)
21.46 (.845)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
3.50 (.138)
3.81 (.150)
2.87 (.113)
3.12 (.123)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
2.21 (.087)
2.59 (.102)
0.40 (.016)
0.79 (.031)
Collector
Collector
Emitter
Gate
5.45 (.215) BSC
Dimensions in Millimeters and (Inches)
2-Plcs.
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
Figure 22, Turn-on Switching Waveforms and Definitions
Figure 23, Turn-off Switching Waveforms and Definitions
*DRIVER SAME TYPE AS D.U.T.
I
C
V
CLAMP
100uH
V
TEST
A
A
B
D.U.T.
DRIVER*
V
CE
Figure 24, E
ON1
Test Circuit
I
C
A
D.U.T.
APT15DS30
V
CE
Figure 21, Inductive Switching Test Circuit
V
CC
TJ = 125°C
10%
Switching Energy
10%
tr
5%
td(on)
90%
Drain Current
DrainVoltage
Gate Voltage
5%
Switching Energy
90%
90%
td(off)
10%
tf
0
Drain Current
DrainVoltage
Gate Voltage
