UBA2024P - Philips Semiconductors / NXP Semiconductors

DATA SH EET

Product speciﬁcation

Supersedes data of 2003 Aug 13 2004 Feb 03

INTEGRATED CIRCUITS

UBA2024

Half-bridge power IC for CFL lamps

2004 Feb 03 2

Philips Semiconductors Product speciﬁcation

Half-bridge power IC for CFL lamps UBA2024

FEATURES

•Integrated half-bridge power transistors

•Integrated bootstrap diode

•Integrated low-voltage supply

•Maximum voltage of 550 V

•Adjustable oscillator frequency

•Soft start

•Minimum glow time control.

APPLICATIONS

•Driver for any kind of load in a half-bridge configuration

•Especially for electronically self-ballasted Compact

Fluorescent Lamps (CFL) for lamp currents up to

220 mA (RMS) under the restriction that the maximum

junction temperature is not exceeded.

GENERAL DESCRIPTION

The UBA2024 is a high-voltage monolithic integrated

circuitmadeintheEZ-HVSOIprocess.The ICisdesigned

for driving CFL lamps in a half-bridge configuration.

The IC features a soft start function, an adjustable internal

oscillator and an internal drive function with a high-voltage

level shifter for driving the half-bridge.

To guarantee an accurate 50% duty cycle, the oscillator

signal is passed through a divider before being fed to the

output drivers.

ORDERING INFORMATION

BLOCK DIAGRAM

TYPE

NUMBER PACKAGE

NAME DESCRIPTION VERSION

UBA2024P DIP8 plastic dual in-line package; 8 leads (300 mil) SOT97-1

mdb029

SWEEP AND

GLOW TIME CONTROL HIGH VOLTAGE

LEVEL SHIFTER

VDD CONTROL

HIGH SIDE

DRIVER

LOW SIDE

DRIVER

OSCILLATOR DIVIDE-BY-2 DEAD TIME

UBA2024

VDD VDD(stop)

SGND

6HV

LS OUT

PGND

Fig.1 Block diagram.

2004 Feb 03 3

Philips Semiconductors Product speciﬁcation

Half-bridge power IC for CFL lamps UBA2024

PINNING

SYMBOL PIN DESCRIPTION

SW 1 sweep timing input

SGND 2 signal ground

FS 3 high-side ﬂoating supply output

PGND 4 power ground

OUT 5 half-bridge output

HV 6 high-voltage supply

VDD 7 internal low-voltage supply

output

RC 8 internal oscillator input

handbook, halfpage

MCE409

UBA2024P

VDD

SGND

OUT

PGND

Fig.2 Pin configuration DIP8 package.

FUNCTIONAL DESCRIPTION

Supply voltage

The UBA2024 is powered by a supply voltage applied to

pin HV. The IC generates its own low supply voltage for

the internal circuitry and therefore, an additional external

low-voltage supply is not required.

Start-up state

With an increase of the supply voltage on pin HV, the IC

enters the start-up state. In the start-up state the high-side

power transistor is not conducting and the low-side power

transistor is switched on. The internal circuit is reset and

the capacitors on the bootstrap pin FS and low-voltage

supply pin VDD are charged. Pins RC and SW are

switched to ground. The start-up state is defined until

VDD =V

DD(start).

Sweep mode

The IC enters the sweep mode at the moment the voltage

onpinVDD >V

DD(start).Thecapacitoronpin SWischarged

by Isweep and the half-bridge circuit starts oscillating. The

circuit enters the start-up state again when the voltage on

pin VDD <V

DD(stop).

Reset

A DC reset circuit is incorporated in the high-side driver.

The high-side transistor is switched off when the voltage

on pin FS is below the high-side lockout voltage VFS(lock).

Oscillation

The oscillation is based upon the 555-timer function. With

the external resistor ROSC and capacitor COSC (see Fig.5)

a self oscillating circuit is made, where ROSC and COSC

determine the oscillating frequency.

To realize an accurate 50% duty cycle, an internal divider

is used. Due to the presence of the divider, the bridge

frequency is half the oscillator frequency.

The output voltage of the bridge will change at the falling

edge of the signal on pin RC. The design equation for the

half-bridge frequency is:

An overview of the oscillator signal, internal LS and HS

drive signals and the output is given in Fig.3.

fosc 1

OSC COSC

××

---------------------------------------------

2004 Feb 03 4

Philips Semiconductors Product speciﬁcation

Half-bridge power IC for CFL lamps UBA2024

When entering the sweep mode, the oscillator starts at

2.5 times the nominal bridge frequency and sweeps down

tothenominalbridgefrequency fnom; seeFig.4.Duringthis

continuously decreasing of the frequency, the circuit

approaches the resonance frequency of the load. This

causes a high voltage across the load, which normally

ignites the lamp.

The sweep time tsweep is determined by the charge current

Ich(sw) and the external capacitor CSW. The sweep to

resonance time should be much larger than the settling

time of the supply voltage on pin HV to guarantee that the

full high-voltage is present at the moment of ignition.

The amplitude of the RC oscillator is equal to the minimum

value of VRC(h) and VSW + 0.4 ×VRC(h).

During the sweep time a current is flowing through the

lamp electrodes for pre-heating the filaments.

Glow time control

The drawback of cold-started CFL lamps is its inherent

glow time which reduces the switching lifetime of the

electrodes (lamp). To make this glow phase as short as

possible, the maximum power is given to the lamp during

the glow time via a special control; see Fig.4.

Non-overlap time

The non-overlap time is defined as the time that both

MOSFETs are not conducting. The non-overlap time is

internally fixed.

handbook, halfpage

MDB031

VRC

VOUT

drive

time

half

bridge

Fig.3 Oscillator, drivers and output signals.

handbook, halfpage

VHV

VDD

0.8VRC(h)

VSW

fosc

Vlamp

Vign

Vglow

Vnom

2.5fnom

fnom

VDD(start)

MDB032

time

minimum glow time control

tsweep

Fig.4 Start-up frequency behaviour.

2004 Feb 03 5

Philips Semiconductors Product speciﬁcation

Half-bridge power IC for CFL lamps UBA2024

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134); all voltages are measured with respect to

SGND; positive currents ﬂow into the IC.

Notes

1. In accordance with the Human Body Model (HBM): equivalent to discharging a 100 pF capacitor through a 1.5 kΩ

series resistor.

2. In accordance with the Machine Model (MM): equivalent to discharging a 200 pF capacitor through a 1.5 kΩseries

resistor and a 0.75 µH inductor.

QUALITY SPECIFICATION

Quality in accordance with

SNW-FQ-611

THERMAL CHARACTERISTICS

Note

1. In accordance with IEC 60747-1.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VHV high-voltage supply voltage normal operation −373 V

mains transients

during 0.5 s −550 V

VFS ﬂoating supply voltage VHV VHV +14 V

VDD low-voltage output supply voltage DC supply 0 14 V

IDD low-voltage output supply current peak value is internally

limited; Tamb =25°C05 mA

VPGND power ground voltage referenced to SGND −1+1 V

Vi(RC) internal oscillator input voltage on pin RC Ii(RC) <1mA 0 V

DD V

Vi(SW) sweep time input voltage on pin SW Ii(SW) <1mA 0 V

DD V

SR slew rate output on pin OUT repetitive −4 +4 V/ns

Tjjunction temperature −40 +150 °C

Tamb ambient temperature −40 +150 °C

Tstg storage temperature −55 +150 °C

Vesd(HBM) HBM electrostatic discharge voltage on pins note 1

HV and VDD −1000 V

SW, RC, FS and OUT −2500 V

Vesd(MM) MM electrostatic discharge voltage on pins note 2

FS −200 V

HV, VDD, SW, RC and OUT −250 V

SYMBOL PARAMETER CONDITIONS TYP. UNIT

Rth(j-a) thermal resistance from junction to ambient in free air; note 1 95 K/W

Rth(j-c) thermal resistance from junction to case note 1 16 K/W

2004 Feb 03 6

Philips Semiconductors Product speciﬁcation

Half-bridge power IC for CFL lamps UBA2024

CHARACTERISTICS

Tj=25°C; all voltages are measured with respect to SGND; positive currents ﬂow into the IC.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

High-voltage supply

VHV high-voltage supply voltage t < 0.5 s and IHV <30µA0−550 V

VFS ﬂoating supply voltage t < 0.5 s and IFS <30µA0−564 V

Low-voltage supply

VDD low-voltage output supply voltage VHV = 100 V; ROSC =∞;

VSW =V

DD; VRC =0V 11.7 12.5 13.3 V

Start-up state

IHV high-voltage supply current VHV = 100 V; ROSC =∞;

VSW =V

DD; VRC =0V −−0.39 mA

VDD(start) start of oscillation voltage 10 11 12 V

VDD(stop) stop of oscillation voltage 8 8.5 9 V

VDD(hys) start-stop hysteresis voltage 2 2.5 3 V

Output stage

RHS(on) HS transistor on-resistance VHV = 310 V; Id= 100 mA −9.7 11 Ω

RLS(on) LS transistor on-resistance Id= 100 mA −8.5 9.4 Ω

VHS(d) HS body diode forward voltage If= 200 mA 1.4 1.8 2.2 V

VLS(d) LS body diode forward voltage If= 200 mA 1.2 1.6 2.0 V

IHS(sat) HS transistor saturation current Vds =30V; T

j≤125 °C;

VHV = 310 V 900 −−mA

ILS(sat) LS transistor saturation current Vds =30V; T

j≤125 °C 900 −−mA

Vboot bootstrap diode drop voltage If= 1 mA 0.7 1.0 1.3 V

tno non overlap time 1 1.35 1.7 µs

VFS(lock) ﬂoating supply lock-out voltage 3.6 4.2 4.8 V

IFS ﬂoating supply current VHV = 310 V; VFS = 12.2 V 10 14 18 µA

Internal oscillator

fosc frequency range bridge oscillator VSW =V

DD −−60 kHz

fosc(nom) nominal frequency bridge oscillator ROSC = 100 kΩ;COSC = 220 pF;

VSW =V

40.05 41.32 42.68 kHz

∆fosc(nom) bridge oscillator frequency variation

with temperature ROSC = 100 kΩ;COSC = 220 pF;

∆T=−20 to +150 °C−2−%

khhigh-level trip point factor 0.382 0.395 0.408

VRC(h) high-level trip point voltage on

pin RC VRC(h) =k

h×VDD 4.58 4.94 5.29 V

kllow-level trip point factor 0.030 0.033 0.036

VRC(low) low-level trip point voltage on

pin RC VRC(l) =k

l×VDD 0.367 0.413 0.458 V

kosc oscillator constant ROSC = 100 kΩ; COSC = 220 pF 1.065 1.1 1.135

2004 Feb 03 7

Philips Semiconductors Product speciﬁcation

Half-bridge power IC for CFL lamps UBA2024

APPLICATION INFORMATION

Sweep function

Ich(sw) charge current for sweep VSW = 0 V 215 280 345 nA

tsweep sweep time CSW = 33 nF; VDD = 12.2 V 0.28 0.35 0.45 s

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

mdb033

CBUF

4.7 uF

LFILT

1.8 mH

RFUS

33 Ω

CHB2

47 nF

11 W/150 mA

max. 550 V

3.1 mH

LLA

CHB1

47 nF

ROSC

110 K

COSC

180 pF

CFS

10 nF

CDV

100 pF

CVDD

10 nF

CLA

1.5 nF

UBA2024P

VDD

SGND

OUT

PGND

CSW

33 nF

AC mains

supply

(230 V)

Fig.5 Typical integrated CFL application with UBA2024P at f = 46 kHz.

2004 Feb 03 8

Philips Semiconductors Product speciﬁcation

Half-bridge power IC for CFL lamps UBA2024

PACKAGE OUTLINES

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC JEITA

SOT97-1 99-12-27

03-02-13

UNIT A

max.

1(1) (1) (1)

cD E e M Z

DIMENSIONS (inch dimensions are derived from the original mm dimensions)

min. A

max. bmax.

1.73

1.14 0.53

0.38 0.36

0.23 9.8

9.2 6.48

6.20 3.60

3.05 0.2542.54 7.62 8.25

7.80 10.0

8.3 1.154.2 0.51 3.2

inches 0.068

0.045 0.021

0.015 0.014

0.009

1.07

0.89

0.042

0.035 0.39

0.36 0.26

0.24 0.14

0.12 0.010.1 0.3 0.32

0.31 0.39

0.33 0.0450.17 0.02 0.13

050G01 MO-001 SC-504-8

(e )

seating plane

0 5 10 mm

scale

Note

1. Plastic or metal protrusions of 0.25 mm (0.01 inch) maximum per side are not included.

pin 1 index

DIP8: plastic dual in-line package; 8 leads (300 mil) SOT97-1

2004 Feb 03 9

Philips Semiconductors Product speciﬁcation

Half-bridge power IC for CFL lamps UBA2024

SOLDERING

Introduction to soldering through-hole mount

packages

This text gives a brief insight to wave, dip and manual

soldering.Amorein-depth account ofsolderingICs can be

found in our

“Data Handbook IC26; Integrated Circuit

Packages”

(document order number 9398 652 90011).

Wave soldering is the preferred method for mounting of

through-hole mount IC packages on a printed-circuit

board.

Soldering by dipping or by solder wave

Driven by legislation and environmental forces the

worldwide use of lead-free solder pastes is increasing.

Typical dwell time of the leads in the wave ranges from

3 to 4 seconds at 250 °C or 265 °C, depending on solder

material applied, SnPb or Pb-free respectively.

Thetotalcontacttimeofsuccessivesolderwavesmustnot

exceed 5 seconds.

The device may be mounted up to the seating plane, but

the temperature of the plastic body must not exceed the

specified maximum storage temperature (Tstg(max)). If the

printed-circuit board has been pre-heated, forced cooling

may be necessary immediately after soldering to keep the

temperature within the permissible limit.

Manual soldering

Apply the soldering iron (24 V or less) to the lead(s) of the

package, either below the seating plane or not more than

2 mm above it. If the temperature of the soldering iron bit

is less than 300 °C it may remain in contact for up to

10 seconds. If the bit temperature is between

300 and 400 °C, contact may be up to 5 seconds.

Suitability of through-hole mount IC packages for dipping and wave soldering methods

Notes

1. For SDIP packages, the longitudinal axis must be parallel to the transport direction of the printed-circuit board.

2. For PMFP packages hot bar soldering or manual soldering is suitable.

PACKAGE SOLDERING METHOD

DIPPING WAVE

CPGA, HCPGA −suitable

DBS, DIP, HDIP, RDBS, SDIP, SIL suitable suitable(1)

PMFP(2) −not suitable

2004 Feb 03 10

Philips Semiconductors Product speciﬁcation

Half-bridge power IC for CFL lamps UBA2024

DATA SHEET STATUS

Notes

1. Please consult the most recently issued data sheet before initiating or completing a design.

2. The product status of the device(s) described in this data sheet may have changed since this data sheet was

published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.

3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.

LEVEL DATA SHEET

STATUS(1) PRODUCT

STATUS(2)(3) DEFINITION

I Objective data Development This data sheet contains data from the objective speciﬁcation for product

development. Philips Semiconductors reserves the right to change the

speciﬁcation in any manner without notice.

II Preliminary data Qualiﬁcation This data sheet contains data from the preliminary speciﬁcation.

Supplementary data will be published at a later date. Philips

Semiconductors reserves the right to change the speciﬁcation without

notice, in order to improve the design and supply the best possible

product.

III Product data Production This data sheet contains data from the product speciﬁcation. Philips

Semiconductors reserves the right to make changes at any time in order

to improve the design, manufacturing and supply. Relevant changes will

be communicated via a Customer Product/Process Change Notiﬁcation

(CPCN).

DEFINITIONS

Short-form specification  The data in a short-form

specification is extracted from a full data sheet with the

same type number and title. For detailed information see

the relevant data sheet or data handbook.

Limiting values definition Limiting values given are in

accordance with the Absolute Maximum Rating System

(IEC 60134). Stress above one or more of the limiting

values may cause permanent damage to the device.

These are stress ratings only and operation of the device

attheseorat any other conditionsabovethosegiven in the

Characteristics sections of the specification is not implied.

Exposure to limiting values for extended periods may

affect device reliability.

Application information  Applications that are

described herein for any of these products are for

illustrative purposes only. Philips Semiconductors make

norepresentationorwarrantythatsuchapplicationswillbe

suitable for the specified use without further testing or

modification.

DISCLAIMERS

Life support applications  These products are not

designed for use in life support appliances, devices, or

systems where malfunction of these products can

reasonably be expected to result in personal injury. Philips

Semiconductorscustomersusingorsellingtheseproducts

for use in such applications do so at their own risk and

agree to fully indemnify Philips Semiconductors for any

damages resulting from such application.

Right to make changes  Philips Semiconductors

reserves the right to make changes in the products -

including circuits, standard cells, and/or software -

described or contained herein in order to improve design

and/or performance. When the product is in full production

(status ‘Production’), relevant changes will be

communicated via a Customer Product/Process Change

Notification (CPCN). Philips Semiconductors assumes no

responsibility or liability for the use of any of these

products, conveys no licence or title under any patent,

makes no representations or warranties that these

products are free from patent, copyright, or mask work

right infringement, unless otherwise specified.

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed

without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license

under patent- or other industrial or intellectual property rights.

Philips Semiconductors – a worldwide compan y

Contact information

For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825

For sales ofﬁces addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.

Printed in The Netherlands R79/02/pp11 Date of release: 2004 Feb 03 Document order number: 9397 750 12676