T- F3-11 BUX 84 BUX 85 2e5C D MM 8235605 OOO48L7 T MMSTEG NPN Silicon Power Transistors SIEMENS AKTIENGESELLSCHAF . 2... BUX 84 and BUX 85 are triple diffused NPN silicon power transistors in TO 220 cases. They are outstanding for their short switching times and high dielectric strength, and are particularly suitable for switching power supplies in TV sets. The collector is electrically connected to the metallic mounting area. Type | Ordering code BUX 84 Q68000-A3869 BUX 85 Q68000-A5166 Maximum ratings Collector-emitter voltage Collector-emitter voltage Emitter-base voltage Collector current Collector-peak current (tp 31 ms) Base current Base peak current Negative base peak current at turning off Storage temperature range Junction temperature Total power dissipation (Tpase S 50 C) Therma! resistance Junction to mounting flange 2229 E~12 BCE Sensing mark Approx. weight 18 g 4]max. f+ 88-42 -4 3 a lyah. fom ] 0, a 154094 Dimensions in mm BUX 84 BUX 85 Ves 800 1000 v Vceo 400 450 Vv Veso 10 10 i] 2 2 A Iom 3 3 A is 0.75 0.75 A Iau 1 1 A -lom 1 1 A Tetg -65 to +150 C 1; 150 150 C Prot 40 40 WwW Riso | $2.5 | $25 | Kw -4& 913 MB 8235605 Ooo4ebs 1 MMSIEG, esc? 25C 048058 uUr-3S-j) . ~~ BUX 84 SIEMENS AKTIENGESELLSCHAF BUX 88 Static characteristics (Tan = 25 C) BUX 84 BUX 85 Collector-emitter breakdown voltage (Ic = 100 mA; Jg = 0; L = 25 mH) Vipriceo 2400 2450 Vv Collector cutoff current (Vces = 800 V) Ices $1 - mA (Vces = 800V; Tj = 125C) lees $1.5 - mA (Vceg = 1000 V) Ices - $0.2 mA (Vces = 1000 V; Tj = 125 C) Ices - $1.5 mA Emitter cutoff current (Vego = 5 V) Tego $1 s1 mA Collector-emitter saturation voltage (Ug = 0.3 A; Ip = 0.03 A) VecEsat $1.5 $1.5 Vv (Ue = 1 A: Ip = 0.2 A) Veesat 33 $3 Vv Base-emitter saturation voltage (Ig = 1 A; Jy = 0.2 A) Vpesat $1.1 $1.1 Vv Dynamic characteristics (Tap = 25 C) Transition frequency (Veg = 10 V: Ig = 0.2 A; f = 1 MHz) fr 20 20 MHz Switching times: (Vcc = 250 V: Ic =1A; Ig = 0.2.4; ~Ig = 0.4A) Turn-on time ton 0.2 (<0.5) 0.2 (<0.5) pS Storage time ts 0.2 (<3.5} 2 (<3.5} ps Fall time!) ty 0.4 0.4 ps 1) at Tease = 95C is #31 ps 914 2230 E-13 25C ) MM 8235605 0004869 3 MMSIEG OS 25C 04869 OTT - BAL SIEMENS AKTIENGESELLSCHAF Total perm. power dissipation versus temperature w Prot = f (Teasad 50 Prot 30 20 10 Q 50 100 150 C Permissible operating range Ig =f (Vee): Tease 50C A BUX 84 10 fy 40 10! 40? 107V ~ Ve 2231 -14 BUX 84 BUX 85 Pennissible pulse load K. 2c = f (0; v= parameter W of = 10" 10 103) fo? 10110 ta! 10? ms } t Permissible opsrating range Io =f (Vee): Tease $50C A BUX 85 10 fr t 10 10" 10? 10? 40 10 10? 10V Vee 915 25C D MM 8235605 OO04870 T MMSIEG - 250 048 1U_ SIEMENS AKTIENGESELLSCHAF DC current gain tees i (te) Veg = 5 V; Tease = 40 Re | 40 10? 10" 10 0'A Test circuit for breakdown voltage Viaajceo for: Varicea 916 =2232 F-OL -_ SEG 1) ij 25C D MM 8235605 0004871 1 MBSIEG 25C 04871 O-7=B5-// BUX 84 BUX 85 STEMENS AKTIENGESELLSCHAF Test circuit for switching times % ks 30ns Wt for oo E- fon 4g { t ~~ oot % --], . 90-1 aa ae Op Hao Ttk t a a on te ty pt +2 100 mae Veqt = 250V F {2233 F-02 917