MITSUBISHI ELECTRIC CORPORATION ENGLISH VERSION ONLY PREPARED By: M. Yamada CHECKED BY: K.Mori R SPECIFICATION APPROVED BY: S.Minamihara v DATE: Nov. 8 01 1.TYPE : ML725B11F-04,05,06,07 2.APPLICATION _ : Optcal Fiber Communication 3.STRUCTURE _ : InGaAsP/InP DFB LASER DIODE 4,OUTLINE : G480570 5.ABSOLUTE MAXIMUM RATINGS No. PARAMETER SYMBOL CONDITION RATINGS UNIT 1 Optical Output Power Po Cw 6 mW 2 Operating Current lop _ 150 3 | Reverse Voltage (LD) VRL _ 2 4 | Reverse Voltage (PD) VRD - 20 5 | Forward Current (PD) IrD - 2 mA 6 Case Temperature Te _ 0 to +85 c 7 Storage Temperature Tstg _ -40 to +100 C 6. OPTICAL AND ELECTRICAL CHARACTERISTICS (Te=25+3C otherwise specified) LIMITS No. PARAMETER SYMBOL CONDITION UNIT MIN. TYP. MAX. cw _ 6 20 1 Threshold Current Ith mA CW,Tce=85C -- 30 40 CW,Po=5mW _ 18 40 2 Operating Current lop mA CW,Po=5mW,Te=85C 50 75 3 Operating Voltage Vop CW,Po=5mW 1.1 1.8 v 4 Peak Wavelength Ap CW,Po=5mW,Tce=25C <*2> nm 5 Slope efficiency n CW,Po=S5mW 0.3 0.4 -- mW /mA Beam Divergence | CW,Po=5mW (Parallel) -- 25 35 deg. 6 (Full angle at half Maximum Oat CW,Po=5mW (Perpendicular) ~ 30 40 deg. Side Mode S . CW,Po=5mW,Tc=0 to+85C 30 _ ide Mode Suppression 7 | Ratio SMSR | 3.0Gbit/s, Ibias=Ith 30 dB Imod=40mA, Tc=25C ~ ~ 8 _| Rise time tr 622Mbps, Ibias=Ith = 60 = psec 9 Fall time tf 10%-90%, short lead-pin _ 110 _ psec CW,APC Im(25C}= 5mW 10 | Tracking Error TE TE=10log(Po(Tc)/Po(25C)) -1.0 _ 1.0 dB TC=0 to 85C : CW,Po=5mW 11 Monitor Current (PD) Im VRD=1V,RL=100<*1> 0.05 0.2 mA 12 | Dark Current (PD) Id VRD=5V _ 1.0 LA 13 Capacitance (PD) Ct Vrb=5V, f=1MHz _ 10 20 pF SPECIFICATION GNOK-ML725B11F-04-* PAGE 1/2 MITSUBISHI ELECTRIC CORPORATION <*1> RL is load resistance of the photo diode. <*2> Peak Wave length LIMITS TYPE SYMBOL | TEST CONFIYION IN. we Max, | UNIT ML725B11F-04 1270.7 | 1275.7 | 12807 | ML725B11F-05 Ap CW,Po=5mW 1295.2 1300.2 1305.2 ML725B11F-06 Te=25C 1319.7 1324.7 1329.7 ML725BI1F-07 1344.2 1349.2 1354.2 7. ACCOMPANYING INSPECTION DATA Ith,Iop,Vop, 7 , A p,Im(@Po=5mW,Tc=25C) 8. Safety precautions relating to handling of optical semiconductor device General: Although the manufacturer is always striving to improve the reliability of its products, problems and errors may occur with semiconductor products. Hence, it is required so that the users products are designed with full regard to safety by incorporating the redundancy, fire prevention, error prevention so that any problems or error with a semiconductor product does not cause any accidents resulting in injury or death, fire, or environmental damage. The following requirements must be strictly observed. Warning! 1. Avoid laser light entering the eyes In normal operation the semiconductor laser device, an optical device , emits laser light. Laser light entering the eye causes extreme danger. Never look directly at the laser light , and never look it directly through an optical system such as a lens. Use an ITV camera or IR viewer to observe the laser light. 2. Handling of the product This product uses GaAs (gallium arsenate). In normal conditions this product is not toxic. However, if it is powdered or vaporized, its powder or vapor is dangerous to humans. Never attempt to crush, grind, bake or chemically treat this product. Do not put this product into your mouth or swallow it. 3. Discarding the product This product uses GaAs (gallium arsenate). It should be discarded as a specially controlled industrial waste, it should be separated from general industrial and household wastes, according to the Law of Wastes and Cleaning. Caution! 1. High temperature During operation the product may become hot. Therefore do not touch it directly during operation. The product will remain hot even after the power is turned off, so wait until it cools before you touch it. Otherwise burns may be caused. Never place any inflammable substance, which may cause a fire near the product. SPECIFICATION GNOK-ML725B11F-04-* PAGE 22 io Item Description Mat erials Remarks 01 LD Chip 02 PD Chip 03 Window Gass 04 Cap Cover 05 Base SPC +0 Li 5.6 -0.03 ; 64.25 Note) Positional accuracy of the emitting point respect to the Base. AX, AYS+0.06 AZ = +0.03 _ 63.55 +0.1 _ (03) ee ra | al @ $1.0Min o|~ Fa <6 L f | 2 S| + PLLLL A i Emitting Facet #1 pa rs nN N = 2 ty y- y Reference Plane oat H pj}, w (4) (3) | on Ul i SN Base ji Je i ind co PD LD - 62.0+0.25 ; > (P.C.D.) | '| 4-60.45 +0.05 } HL (2) (1) <Lead Connection> (1) (2) mit < Sri 2 HH 9 ia = fH a _ oh ws = =e wl AR A 3A%encuconon [ae MITSUBISH! ELECTRIC CORPORATION |OUTLINE DRAWING OF LASER DIODE z : <n IN mem Fatty | clits | plete awh (25B-package, F-connection) aah 10. - ScaE| ~~ 1 NTS Bb Setcton| wm | ur | am | xve1n6(G]4 8 0 5 7 0