PHOTODIODES FOR HIGH-PERFORMANCE APPLICATIONS PIN PHOTO- PIN Photodiodes InGaAs and Si PIN Diodes, Quadrant Detectors, UV-Enhanced DIODES FOR INDUSTRIAL APPLICATIONS InGaAs and Si PIN Diodes - Quadrant Detectors - UV-Enhanced Applications * Telecom * Instrumentation * Photometry * Laser power monitoring Product Description Silicon PIN photodiodes are available in a wide variety of active area to accommodate a large variety of applications. The PIN structure allows high quantum efficiency and fast response for detection of photon in the 400 nm to 1100 nm range. The YAG series offers an exceptional 0.4 A/W at 1060 nm by using a thick silicon material. Designed with a guard ring to collect current generated outside of the active area, they are the detectors of choice when the entire chip is illuminated by reducing unwanted carriers responsible for noise. Precise beam positioning can be achieved by using our quadrant detectors. They are designed with 4 pie-shaped quadrant sections from doping process thus reducing to almost zero the "dead" space between each quadrant. Each quadrant is connected to an isolated lead. The C30741 provide fast response and good quantum efficiency in the spectral range between 300 nm to 1100 nm. Designed for high-speed, high-volume production and cost sensitive applications, these photodiodes are offered in plastic package, either TO style or SMD packages with a visible blocking filter option. Our UV series are high quality Si PIN photodiode in hermatically sealed TO package designed for the 220 nm to 1100 nm wavelength region with enhanced operation in the UV range. Low noise detection is achieved by operating the UV series in photovoltaic mode (0 V bias). The InGaAs PIN detectors provide high quantum efficiency from 800 nm to 1700 nm. They feature low capacitance for extended bandwidth, high resistance for high sensitivity, high linearity, and uniformity within 2 % across the detector active area. * Fiber optic test equipment * High speed switching * Spot tracking * Laser range finders * Missile guidance * Laser warning system Features and Benefits * High speed * High responsivity * Hermetically sealed * Large area available * High shunt resistance, low dark current Product Table InGaAs PIN, High Speed, Peak Wavelength at 1550 nm Active Diameter Responsivity Peak Capacitance BW Dark Current Breakdown Voltage Operating Voltage m A/W pF GHz nA V V C30616ECERH 50 0.95 0.35 3.5 <1 100 5 Ceramic carrier C30617BH 100 0.95 0.8 3.5 <1 100 5 TO-18, ball lens C30617BFCH 100 0.95 0.8 3.5 <1 100 5 TO-18, FC receptacle C30617BSCH 100 0.95 0.8 3.5 <1 100 5 TO-18, SC receptacle C30617BSTH 100 0.95 0.8 3.5 <1 100 5 TO-18 ST receptacle C30617ECERH 100 0.95 0.6 3.5 <1 100 5 Ceramic carrier C30618BFCH 350 0.95 4 0.75 1 100 5 TO-18, FC receptacle C30618GH 350 0.95 4 0.75 1 100 5 T0-18 C30618ECERH 350 0.95 4 0.75 1 100 5 Ceramic carrier C30637ECERH 75 0.95 0.4 3.5 <1 100 5 Ceramic carrier Unit 22 Package www.perkinelmer.com Product Table InGaAs PIN, Large Area, Peak Wavelength at 1550 nm Active Diameter Responsivity Peak Capacitance Shunt Resistance BW Dark Current Breakdown Voltage Operating Voltage mm A/W pF Mega Ohm GHz nA V V C30641EH-TC 1 0.95 40 50 75 5 80 0-5 TO-8, flange, TE-cooled C30641EH-DTC 1 0.95 40 50 75 5 80 0-5 TO-8, flange, dual TE C30641GH 1 0.95 40 50 75 5 80 0-5 TO-18 C30642GH 2 0.95 150 25 20 10 50 0-5 TO-5 C30665GH 3 0.95 200 10 3 25 50 0-5 TO-5 C30723GH 5 0.95 950 5 3 - 50 0-5 TO-5 C30619GH 0.5 0.95 8 250 350 1 80 0-10 TO-18 Unit Package Product Table Silicon PIN Active Diameter Active Area Responsivity Peak Peak Wavelength Capacitance Rise/Fall Time Dark Current Shunt Resistance Breakdown Voltage Operating Voltage um mm2 A/W nm pF ns nA M V V C30741PH-15S C30741PFH-15S 1.5 x 1.5 2.25 800 800 11 2 0.05 300 10 Plastic T 1-3/4 throughole 1.5 x 1.5 2.25 800 800 11 2 0.05 - 300 10 C30807EH T 1-3/4 visible blocking 1 0.8 0.6 900 2.5 5 10 - >100 45 TO-18 C30808EH 2.5 5 0.6 900 6 8 30 - >100 45 TO-5 C30822EH 5 20 0.6 900 17 10 50 - >100 45 TO-8 C30809EH 8 50 0.6 900 35 15 70 - >100 45 TO-8 C30810EH 11 100 0.6 900 70 20 300 - >100 45 TO-36 C30971EH 0.5 0.2 0.5 830 1.6 0.5 10 - >200 100 TO-18 FFD-100H 2.5 5.1 0.6 850 8.5 3.5 5 - >125 15 TO-5 FFD-200H 5.0 20 0.6 850 30 5 10 - >125 15 3 pin, 0.6 inch dia. FND-100QH 2.5 5.1 0.64 920 8.5 <1n 10 - 150 100 TO-5 UV-040BQH 1.0 0.81 0.62 900 25 - - >500 - 0 TO-5, response down to 200 nm UV-100BQH 2.5 5.1 0.62 900 150 - - >100 - 0 TO-5, response down to 200 nm UV-215BGH/340 0.0 - - - 0 TO-5, response down to 250 nm UV-215BQH 5.5 23.4 0.62 900 700 - - >50 - 0 TO-5, response down to 200 nm UV-245BGH 5 18.5 0.62 900 630 - - >75 - 0 TO-5, response down to 250 nm UV-245BQH 5 18.5 0.62 900 630 - - >75 - 0 TO-5, response down to 200 nm YAG-100AH 2.5 5.1 0.7 1000 2.5 5 <20 - >200 180 TO-5 YAG-200H 5.0 20 0.7 1000 6 5 <100 - >200 180 TO-8 YAG-444AH 16.0 200 0.7 1000 35 5 <200 - >200 180 TO-36 Unit Package SR10BP 0.65 900 10 10 10 170 SMT SR10BP-B 0.65 900 10 10 10 170 SMT 0.56 x 0.56 4 150 10 170 SMT SR10DE-B 6.71 4 150 10 170 SMT PFD10 0.31 SMT SR10DE CR50DE 0.6 880 25 200 5 170 0.5 880 2.5 3000 0.5 50 Product Table Specialty Silicon Detectors Description Unit Active Diameter Active Area Capacitance Rise/Fall Time Dark Current Breakdown Voltage min Responsivity 900 nm Responsivity 1060 nm Noise Current mm mm2 pF ns nA V A/W A/W pA/sqrt(Hz) Package C30845EH Quandrant PIN 8 50 8/q 6 70 nA 100 0.6 0.17 0.26/q TO-8 YAG-444-4AH Quandrant PIN 11.3 100 9/q 8 <75 nA 100 0.6 0.5 0.2/q Custom DTC-140H Dual wavelength detector Si-Si (Top/Bottom) 3.5 9.9 300/300 - 50 / 50 M - 0.6/0 0.25 / 0.15 0.033 / 0.133 Custom www.perkinelmer.com InGaAs and Si PIN Diodes - Quadrant Detectors - UV-Enhanced 23