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Product Description
Silicon PIN photodiodes are available in a wide variety of active area to accommodate a large variety
of applications. The PIN structure allows high quantum efficiency and fast response for detection of
photon in the 400nm to 1100nm range.
The YAG series offers an exceptional 0.4 A/W at 1060nm by using a thick silicon material. Designed
with a guard ring to collect current generated outside of the active area, they are the detectors of
choice when the entire chip is illuminated by reducing unwanted carriers responsible for noise.
Precise beam positioning can be achieved by using our quadrant detectors. They are designed with
4 pie-shaped quadrant sections from doping process thus reducing to almost zero the “dead” space
between each quadrant. Each quadrant is connected to an isolated lead.
The C30741 provide fast response and good quantum efficiency in the spectral range between
300nm to 1100nm. Designed for high-speed, high-volume production and cost sensitive applica-
tions, these photodiodes are offered in plastic package, either TO style or SMD packages with a visi-
ble blocking filter option.
Our UV series are high quality Si PIN photodiode in hermatically sealed TO package designed for the
220nm to 1100nm wavelength region with enhanced operation in the UV range. Low noise detection
is achieved by operating the UV series in photovoltaic mode (0 V bias).
The InGaAs PIN detectors provide high quantum efficiency from 800 nm to 1700nm. They feature
low capacitance for extended bandwidth, high resistance for high sensitivity, high linearity, and unifor-
mity within 2 % across the detector active area.
PIN PHOTO
DIODES
FOR INDUSTRIAL
APPLICATIONS
Unit µm
50
100
100
100
100
100
350
350
350
75
Active
Diameter
C30616ECERH
C30617BH
C30617BFCH
C30617BSCH
C30617BSTH
C30617ECERH
C30618BFCH
C30618GH
C30618ECERH
C30637ECERH
A/W
0.95
0.95
0.95
0.95
0.95
0.95
0.95
0.95
0.95
0.95
Responsivity
Peak
pF
0.35
0.8
0.8
0.8
0.8
0.6
4
4
4
0.4
Capacitance
GHz
3.5
3.5
3.5
3.5
3.5
3.5
0.75
0.75
0.75
3.5
BW
nA
<1
<1
<1
<1
<1
<1
1
1
1
<1
Dark Current
V
100
100
100
100
100
100
100
100
100
100
Breakdown
Voltage
V
5
5
5
5
5
5
5
5
5
5
Operating
Voltage
Ceramic carrier
TO-18, ball lens
TO-18, FC receptacle
TO-18, SC receptacle
TO-18 ST receptacle
Ceramic carrier
TO-18, FC receptacle
T0-18
Ceramic carrier
Ceramic carrier
Package
InGaAs PIN, High Speed, Peak Wavelength at 1550 nm
Product Table
PHOTODIODES FOR HIGH-PERFORMANCE APPLICATIONS
PIN Photodiodes
InGaAs and Si PIN Diodes,
Quadrant Detectors,
UV-Enhanced
InGaAs and Si PIN Diodes – Quadrant Detectors – UV-Enhanced
-
Applications
• Telecom
• Instrumentation
• Photometry
• Laser power monitoring
• Fiber optic test equipment
• High speed switching
• Spot tracking
• Laser range finders
• Missile guidance
• Laser warning system
Features and Benefits
• High speed
• High responsivity
• Hermetically sealed
• Large area available
• High shunt resistance, low dark current
23
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Unit um
1.5 x1.5
1.5 x1.5
1
2.5
5
8
11
0.5
2.5
5.0
2.5
1.0
2.5
0.0
5.5
5
5
2.5
5.0
16.0
Active
Diameter
C30741PH-15S
C30741PFH-15S
C30807EH
C30808EH
C30822EH
C30809EH
C30810EH
C30971EH
FFD-100H
FFD-200H
FND-100QH
UV-040BQH
UV-100BQH
UV-215BGH/340
UV-215BQH
UV-245BGH
UV-245BQH
YAG-100AH
YAG-200H
YAG-444AH
SR10BP
SR10BP-B
SR10DE
SR10DE-B
PFD10
CR50DE
mm2
2.25
2.25
0.8
5
20
50
100
0.2
5.1
20
5.1
0.81
5.1
23.4
18.5
18.5
5.1
20
200
0.65
0.65
0.56 x 0.56
6.71
0.31
Active Area
A/W
800
800
0.6
0.6
0.6
0.6
0.6
0.5
0.6
0.6
0.64
0.62
0.62
0.62
0.62
0.62
0.7
0.7
0.7
0.6
0.5
Responsiv-
ity Peak
nm
800
800
900
900
900
900
900
830
850
850
920
900
900
900
900
900
1000
1000
1000
900
900
880
880
Peak
Wavelength
pF
11
11
2.5
6
17
35
70
1.6
8.5
30
8.5
25
150
700
630
630
2.5
6
35
10
10
4
4
25
2.5
Capacitance
ns
2
2
5
8
10
15
20
0.5
3.5
5
<1n
-
-
-
-
-
-
5
5
5
10
10
150
150
200
3000
Rise/Fall
Time
nA
0.05
0.05
10
30
50
70
300
10
5
10
10
-
-
-
-
-
-
<20
<100
<200
10
10
10
10
5
0.5
Dark
Current
MΩ
-
-
-
-
-
-
-
-
-
-
>500
>100
>50
>75
>75
-
-
-
Shunt
Resistance
V
300
300
>100
>100
>100
>100
>100
>200
>125
>125
150
-
-
-
-
-
-
>200
>200
>200
170
170
170
170
170
50
Breakdown
Voltage
V
10
10
45
45
45
45
45
100
15
15
100
0
0
0
0
0
0
180
180
180
Operating
Voltage
Plastic T 1-¾ throughole
T 1-¾ visible blocking
TO-18
TO-5
TO-8
TO-8
TO-36
TO-18
TO-5
3 pin, 0.6 inch dia.
TO-5
TO-5, response down to 200nm
TO-5, response down to 200nm
TO-5, response down to 250nm
TO-5, response down to 200nm
TO-5, response down to 250nm
TO-5, response down to 200nm
TO-5
TO-8
TO-36
SMT
SMT
SMT
SMT
SMT
Package
Silicon PIN
Product Table
Unit mm
1
1
1
2
3
5
0.5
Active
Diameter
C30641EH-TC
C30641EH-DTC
C30641GH
C30642GH
C30665GH
C30723GH
C30619GH
A/W
0.95
0.95
0.95
0.95
0.95
0.95
0.95
Responsivity
Peak
pF
40
40
40
150
200
950
8
Capacitance
Mega Ohm
50
50
50
25
10
5
250
Shunt
Resistance
GHz
75
75
75
20
3
3
350
BW
nA
5
5
5
10
25
-
1
Dark Current
V
80
80
80
50
50
50
80
Breakdown
Voltage
V
0-5
0-5
0-5
0-5
0-5
0-5
0-10
Operating
Voltage
TO-8, flange, TE-cooled
TO-8, flange, dual TE
TO-18
TO-5
TO-5
TO-5
TO-18
Package
InGaAs PIN, Large Area, Peak Wavelength at 1550 nm
Product Table
Unit
C30845EH
YAG-444-4AH
DTC-140H
Quandrant PIN
Quandrant PIN
Dual wavelength
detector Si-Si
(Top/Bottom)
Description
mm
8
11.3
3.5
50
100
9.9
8/q
9/q
300/300
6
8
-
70nA
<75nA
50/ 50 MΩ
100
100
-
0.6
0.6
0.6/0
0.17
0.5
0.25/ 0.15
0.26/q
0.2/q
0.033/
0.133
Active
Diameter
mm2
Active Area
pF
Capacitance
ns
Rise/Fall Time
nA
Dark Current
V
Breakdown
Voltage min
A/W
Responsivity
900nm
A/W
Responsivity
1060nm
pA/sqrt(Hz)
Noise
Current
TO-8
Custom
Custom
Package
Specialty Silicon Detectors
Product Table
InGaAs and Si PIN Diodes – Quadrant Detectors – UV-Enhanced