MITSUBISHI SEMICONDUCTOR (SMALL-SIGNAL DIODE) MC2845 FOR GENERAL SWITCHING APPLICATION SILICON EPITAXIAL TYPE(SERIES TYPE) DESCRIPTION T! Unitsmm Mitsubishi MC2845 is a super mini package plastic seal type silicon epitaxial OUTLINE DRAWING oz type double diode, it is designed for general switching application. 3 5 . 2540. A Double and small pin capacitance(2 pieces),suitable for protect circuit,bias e @ 12540.1 0.425 circuit. | | FEATURE EE 5 @Small pin capacitance al . 8 | 2 @Ouble and super mini package for mounting = 5 . | rE} S| lg | 1 APPLICATION a Fy | For general switching of audio machine, VCR. B : { ~8: 28 o| gS + aif | 3 su oy =e oO 2 Oo TERMINAL CONNECTOR > CATHODE 2 : ANODE 1 EIAJ : SC-70 : CATHODE 1+ANODE 2 Note) The dimension without tolerance represent central vatue. MARKING INTERNAL CONNECTION @ @ [] TL De A 8 he LE Oo UU @ MAXIMUM RATINGS (Ta=25'C) VAM Peak raverse 35 vA DC reverse 30 {Fsm 4 lo 100 Pr Total allowable ax28C) 150 1 Junction 4125 T ~55 to +125 ELECTRICAL CHARACTERISTICS (Ta=25'C) Symbol! Parameter Test conditions ms VFI Forward be =10mA 0.75 V2 Forward (fF =50mA 0.85 Vera le= 0.90 {A current VA =30V Ct Va 4MHz D1 10/6D2 ae MTSE ELECTRIC 8-33 MITSUBISHI SEMICONDUCTOR (SMALL-SIGNAL DIODE) MC2845 FOR GENERAL SWITCHING APPLICATION SILICON EPITAXIAL TYPE(SERIES TYPE) TYPICAL CHARACTERISTICS FORWARD CURRENT VS.FORWARD VOLTAGE(D1) FORWARD CURRENT VS.FORWARD VOLTAGE(D2) 100 70 = = 50 < 3 30 3 ee PFE 7 (1-3) ~ (3-2) k bE 0 Zz 1 2 = 1 2 ui Ww 7 oc x 5 a a 3 3 3 38 o 2 a Q g ! 07 z z 05 3 Oo 03 * 02 0.1 0.2 04 0.6 08 1.0 1.2 0.2 0.4 0.6 08 1.0 1.2 FORWARD VOLTAGE VF(V) FORWARD VOLTAGE vr(V) PIN CAPACITANCE PIN CAPACITANCE VS. REVERSE VOLTAGE(D1) VS. REVERSE VOLTAGE(02) z im 2 & 6 6 WwW uu g 3 z= = 5 5 oO Oo z z om x 1 2 5 40-20 50 100 4 2 5 10 20 50 100 REVERSE VOLTAGE Va(V} REVERSE VOLTAGE Va(V) REVERSE CURRENT VS. REVERSE VOLTAGE 10 7 _~ 5 4 3 z 2 5 1 Zz 07 e 05 os O 02 2 0.1 2 . 0.07 > 0.05 x 0.03 0.02 0.01 i) 5 10 15 20 25 REVERSE VOLTAGE Vr (V) 9 MITSUBISHI 8- 34 ELECTRIC