LP62S16256G-I Series
256K X 16 BIT LOW VOLTAGE CMOS SRAM
(June, 2008, Version 1.0) AMIC Technology, Corp.
Document Title
256K X 16 BIT LOW VOLTAGE CMOS SRAM
Revision History
Rev. No. History Issue Date Remark
0.0 Initial issue June 2, 2006 Preliminary
1.0 Final version release June 27, 2008 Final
LP62S16256G-I Series
Preliminary 256K X 16 BIT LOW VOLTAGE CMOS SRAM
(June, 2008, Version 1.0) 1 AMIC Technology, Corp.
Features
Operating voltage: 2.7V to 3.6V
Access times: 55ns / 70ns (max.)
Current:
Very low power version: Operating: 40mA (max.)
Standby: 10μA (max.)
Full static operation, no clock or refreshing required
All inputs and outputs are directly TTL-compatible
Common I/O using three-state output
Data retention voltage: 2.0V (min.)
Available in 44-pin TSOP and 48-ball CSP (6×8mm)
packages
All Pb-free (Lead-free) products are RoHS compliant
General Description
The LP62S16256G-I is a low operating current 4,194,304-bit
static random access memory organized as 262,144 words by
16 bits and operates on low power voltage from 2.7V to 3.6V.
It is built using AMIC's high performance CMOS process.
Inputs and three-state outputs are TTL compatible and allow
for direct interfacing with common system bus structures.
The chip enable input is provided for POWER-DOWN, device
enable. Two byte enable inputs and an output enable input are
included for easy interfacing.
Data retention is guaranteed at a power supply voltage as low
as 2.0V.
Product Family
Pow er Dissipation
Product Family Operating
Temperature VCC
Range Speed Data Retention
(ICCDR, Typ.) Standby
(ISB1, Typ.) Operating
(ICC2, Typ.)
Package
Type
LP62S16256G-I -40°C ~ +85°C2.7V~3.6V 55ns / 70ns 0.08μA 1μA 2.3mA 44L TSOP
48B CSP
1. Typical values are measured at VCC = 3.0V, TA = 25°C and not 100% tested.
2. Data retention current VCC = 2.0V.
Pin Configurations
TSOP CSP (Chip Size Package)
48-pin Top View
I/O9
I/O10
GN
D
VCC
I/O15
I/O16
NC A8
NC
A9
A12
A10 A11 NC
A13
A14 A15
I/O8
I/O7
I/O3
I/O1
GN
D
VCC
A0
A3
A5 A6
A4
A1 A2 NC
654321
A
B
C
D
E
F
G
H
I/O14
I/O13
I/O12
I/O11
A17
NC
A7
A16
I/O2
I/O4
I/O5
I/O6
LB
HB
WE
OE
CE
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
A3
A2
A1
A0
CE
I/O1
I/O2
I/O3
I/O4
VCC
GND
I/O5
I/O6
I/O7
I/O8
WE
A17
A16
A15
A14
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A11
A10
A9
A8
NC
I/O9
I/O10
I/O11
I/O12
VCC
GND
I/O13
I/O14
I/O15
I/O16
LB
HB
OE
A7
A6
LP62S16256GV-I
A13
A5
A4
A12
LP62S16256G-I Series
(June, 2008, Version 1.0) 2 AMIC Technology, Corp.
Block Diagram
DECODER 512 X 8192
MEMORY ARRAY
COLUMN I/O
INPUT
DATA
CIRCUIT
CONTROL
CIRCUIT
VCC
GND
I/O
8
I/O
1
A17
A16
A0
WE
HB
INPUT
DATA
CIRCUIT
I/O
9
I/O
16
LB
OE
CE
Pin Descriptions -- TSOP
Pin No. Symbol Description
1 - 5, 18 - 27,
42 - 44 A0 - A17 Address Inputs
6 CE Chip Enable Input
7 - 10, 13 - 16,
29 - 32, 35 - 38 I/O1 - I/O16 Data Inputs/Outputs
17 WE Write Enable Input
39 LB Lower Byte Enable Input (I/O1 to I/O8)
40 HB Higher Byte Enable Input (I/O9 to I/O16)
41 OE Output Enable Input
11, 33 VCC Power
12, 34 GND Ground
28 NC No Connection
LP62S16256G-I Series
(June, 2008, Version 1.0) 3 AMIC Technology, Corp.
Pin Description - CSP
Symbol Description Symbol Description
A0 - A17 Address Inputs HB Higher Byte Enable Input
(I/O9 - I/O16)
CE Chip Enable OE Output Enable
I/O1 - I/O16 Data Input/Output VCC Power Supply
WE Write Enable Input GND Ground
LB Byte Enable Input
(I/O1 - I/O8) NC No Connection
Recommended DC Operating Conditions
(TA = -40°C to + 85°C)
Symbol Parameter Min. Typ. Max. Unit
VCC Supply Voltage 2.7 3 3.6 V
GND Ground 0 0 0 V
VIH Input High Voltage 2.2 - VCC + 0.3 V
VIL Input Low Voltage -0.3 - +0.6 V
CL Output Load - - 30 pF
TTL Output Load - - 1 -
LP62S16256G-I Series
(June, 2008, Version 1.0) 4 AMIC Technology, Corp.
Absolute Maximum Ratings*
VCC to GND..............................................-0.5V to +4.0V
IN, IN/OUT Volt to GND................... -0.5V to VCC + 0.5V
Operating Temperature, Topr...................-40°C to +85°C
Storage Temperature, Tstg.....................-55°C to +125°C
Power Dissipation, PT.......................................................................0.7W
*Comments
Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to this device.
These are stress ratings only. Functional operation of this
device at these or any other conditions above those
indicated in the operational sections of this specification is
not implied or intended. Exposure to the absolute
maximum rating conditions for extended periods may affect
device reliability.
DC Electrical Characteristics (TA = -40°C to + 85°C, VCC = 2.7V to 3.6V, GND = 0V)
Symbol Parameter LP62S16256G-55LLI / 70LLI Unit Conditions
Min. Typ. Max.
⏐ILI⏐ Input Leakage Current - - 1
μA VIN = GND to VCC
⏐ILO⏐
Output Leakage Current
-
-
1
μA CE = VIH
HB = VIH or OE = VIH or
WE = VIH
VI/O = GND to VCC
ICC Active Power Supply Current - - 5 mA CE = VIL, II/O = 0mA
ICC1 - 25 40 mA Min. Cycle, Duty = 100%
Dynamic Operating Current CE = VI, II/O = 0mA
ICC2 - 2.3 8 mA CE = VIL, VIH = VCC,
VIL = 0V, f = 1MHz,
II/O = 0 mA
ISB - - 1 mA CE= VIH
VCC ≤ 3.3V
ISB1 Standby Current - 1 10
μA CE ≥ VCC - 0.2V,
VCC ≤ 3.3V
VIN ≥ 0V
VOL Output Low Voltage - - 0.4 V IOL = 2.1 mA
VOH Output High Voltage 2.2 - - V IOH = -1.0 mA
LP62S16256G-I Series
(June, 2008, Version 1.0) 5 AMIC Technology, Corp.
Truth Table
CE OE WE LB HB I/O1 to I/O8 Mode I/O9 to I/O16 Mode VCC Current
H X X X X Not selected Not selected ISB1, ISB
X X X H H High - Z High - Z ISB1, ISB
L L Read Read ICC1, ICC2, ICC
L L H L H Read High - Z ICC1, ICC2, ICC
H L High - Z Read ICC1, ICC2, ICC
L L Write Write ICC1, ICC2, ICC
L X L L H Write High - Z ICC1, ICC2, ICC
H L High - Z Write ICC1, ICC2, ICC
L H H L X High - Z High - Z ICC1, ICC2, ICC
L H H X L High - Z High - Z ICC1, ICC2, ICC
Note: X = H or L
Capacitance (TA = 25°C, f = 1.0MHz)
Symbol Parameter Min. Max. Unit Conditions
CIN* Input Capacitance 6 pF VIN = 0V
CI/O* Input/Output Capacitance 8 pF VI/O = 0V
* These parameters are sampled and not 100% tested.
LP62S16256G-I Series
(June, 2008, Version 1.0) 6 AMIC Technology, Corp.
AC Characteristics (TA = -40°C to +85°C, VCC = 2.7V to 3.6V)
Symbol Parameter
LP62S16256G-55LLI LP62S16256G-70LLI Unit
Min. Max. Min. Max.
Read Cycle
tRC Read Cycle Time 55 - 70 - ns
tAA Address Access Time - 55 - 70 ns
tACE Chip Enable Access Time - 55 - 70 ns
tBE Byte Enable Access Time - 55 - 70 ns
tOE Output Enable to Output Valid - 30 - 35 ns
tCLZ Chip Enable to Output in Low Z 10 - 10 - ns
tBLZ Byte Enable to Output in Low Z 10 - 10 - ns
tOLZ Out put Enable to Output in Low Z 5 - 5 - ns
tCHZ Chip Disable to Output in High Z - 20 - 25 ns
tBHZ Byte Disable to Output in High Z - 20 - 25 ns
tOHZ Output Disable to Output in High Z - 20 - 25 ns
tOH Output Hold from Address Change 5 - 5 - ns
Write Cycle
tWC Write Cycle Time 55 - 70 - ns
tCW Chip Enable to End of Write 50 - 60 - ns
tBW Byte Enable to End of Write 50 - 60 - ns
tAS Address Setup Time 0 - 0 - ns
tAW Address Valid to End of Write 50 - 60 - ns
tWP Write Pulse Widt h 40 - 50 - ns
tWR Write Recovery Time 0 - 0 - ns
tWHZ Write to Output in High Z - 25 - 25 ns
tDW Data to Write Time Overlap 25 - 30 - ns
tDH Data Hold from Write Time 0 - 0 - ns
tOW Output Active from End of Write 5 - 5 - ns
Note: tCHZ, tBHZ and tOHZ and tWHZ are defined as the time at which the outputs achieve the open circuit condition and are
not referred to output voltage levels.
LP62S16256G-I Series
(June, 2008, Version 1.0) 7 AMIC Technology, Corp.
Timing Waveforms
Read Cycle 1(1, 2, 4)
t
RC
t
OH
t
AA
t
OH
Address
D
OUT
Read Cycle 2(1, 2, 3)
t
RC
t
AA
Address
t
ACE
t
CHZ
5
CE
HB, LB
t
BHZ
5
OE
t
CLZ
5
t
BE
t
BLZ
5
t
OE
t
OLZ
5
t
OHZ
5
D
OUT
Notes: 1. WE is high for Read Cycle.
2. Device is continuously enabled CE = VIL, HB = VIL and, or LB = VIL.
3. Address valid prior to or coincident with CE and (HB and, or LB ) transition low.
4.
OE = VIL.
5. Transition is measured ±500mV from steady state. This parameter is sampled and not 100% tested.
LP62S16256G-I Series
(June, 2008, Version 1.0) 8 AMIC Technology, Corp.
Timing Waveforms (continued)
Write Cycle 1
(Write Enable Controlled)
tWC
tAW
Address
DATA IN
DATA OUT
WE
HB, LB
CE
tWR3
tCW
tBW
tAS1tWP2
tDW tDH
tOW
tWHZ4
Write Cycle 2
(Chip Enable Controlled)
tWC
tAW
Address
DATA IN
DATA OUT
WE
HB, LB
CE
tWR3
tCW2
tBW
tAS1
tWP
tDW tDH
tOW
tWHZ4
LP62S16256G-I Series
(June, 2008, Version 1.0) 9 AMIC Technology, Corp.
Timing Waveforms (continued)
Write Cycle 3
(Byte Enable Controlled)
t
WC
t
AW
Address
DATA IN
DATA OUT
WE
HB, LB
CE
t
WR
3
t
CW
t
BW
2
t
AS
1
t
WP
t
DW
t
DH
t
OW
t
WHZ
4
Notes: 1. tAS is measured from the address valid to the beginning of Write.
2. A Write occurs during the overlap (tWP, tBW) of a low CE , WE and (H B and , or LB ).
3. tWR is measured from the earliest of CE or WE or (HB and , or LB ) going high to the end of the Write cycle.
4.
OE level is high or low.
5. Transition is measured ±500mV from steady state. This parameter is sampled and not 100% tested.
LP62S16256G-I Series
(June, 2008, Version 1.0) 10 AMIC Technology, Corp.
AC Test Conditions
Input Pulse Levels 0.4V to 2.4V
Input Rise And Fall Time 5 ns
Input and Output Timing Reference Levels 1.5V
Output Load See Figures 1 and 2
30pF
* Including scope and jig. * Including scope and jig.
C
L
TTL
5pF
C
L
TTL
Figure 1. Output Load Figure 2. Output Load for tCLZ, tOLZ,
tCHZ, tOHZ, tWHZ, and tOW
Data Retention Characteristics (TA = -40°C to 85°C)
Symbol Parameter Min. Typ. Max. Unit Conditions
VDR VCC for Data Retention 2.0 - 3.6 V CE ≥ VCC - 0.2V
ICCDR
Data Retention Current
-
0.08
5
μA VCC = 2.0V,
CE ≥ VCC - 0.2V
VIN ≥ 0V
tCDR Chip Disable to Data Retention Time 0 - - ns
tR Operation Recovery Time tRC - - ns
See Retention Waveform
tVR VCC Rising Time from Data Retention
Voltage to Operating Voltage 5 - - ms
LP62S16256G-I Series
(June, 2008, Version 1.0) 11 AMIC Technology, Corp.
Low VCC Data Retention Waveform
VCC
CE
t
CDR
V
IH
2.7V
t
R
V
IH
2.7V
DATA RETENTION MODE
t
VR
V
DR
≥
2.0V
CE
≥
V
DR
- 0.2V
Ordering Information
Part No. Access Time (ns) Operating Current
Max. (mA) Standby Current
Max. (μA) Package
LP62S16256GV-55LLIF 44L Pb-Free TSOP
LP62S16256GU-55LLIF 55 40 10
48L Pb-Free CSP
LP62S16256GV-70LLIF 44L Pb-Free TSOP
LP62S16256GU-70LLIF 70 40 10
48L Pb-Free CSP
LP62S16256G-I Series
(June, 2008, Version 1.0) 12 AMIC Technology, Corp.
Package Information
TSOP 44L TYPE II Outline Dimensions unit: inches/mm
44
1D
E
H
E
0.254
L
1
L
A
1
A
2
A
S B
e
D
yL
1
c
L
23
22
Symbol Dimension in inch Dimension in mm
Min. Nom. Max. Min. Nom. Max.
A - - 0.047 - - 1.20
A1 0.002 - - 0.05 - -
A2 0.037 0.039 0.041 0.95 1.00 1.05
B 0.010 0.014 0.018 0.25 0.35 0.45
c - 0.006 - - 0.15 -
D 0.721 0.725 0.729 18.31 18.41 18.51
E 0.396 0.400 0.404 10.06 10.16 10.26
e - 0.031 - - 0.80 -
HE 0.455 0.463 0.471 11.56 11.76 11.96
L 0.016 0.020 0.024 0.40 0.50 0.60
L1 - 0.031 - - 0.80 -
S - - 0.036 - - 0.93
y - - 0.004 - - 0.10
θ 0° - 5° 0° - 5°
Notes:
1. Dimension D&E do not include interlead flash.
2. Dimension B does not include dambar protrusion/intrusion.
3. Dimension S includes end flash.
LP62S16256G-I Series
(June, 2008, Version 1.0) 13 AMIC Technology, Corp.
Package Information
48LD CSP ( 6 x 8 mm ) Outline Dimensions unit: mm
(48TFBGA)
A1
A2
A
B
C
D
E
F
G
H
TOP VIEW
Ball#A1 CORNER
SIDE VIEW
C SEATING PLANE
// 0.25 C
A
(0.36)
A
B
C
D
E
F
G
H
123456 123456
C
0.10 C
S
0.25
S
A B
b (48X)
BOTTOM VIEW
Ball*A1 CORNER
E
E1
e
B e
D
1
D
A
0.20(4X)
0.10 C
Dimensions in mm
Symbol MIN. NOM. MAX.
A 1.00 1.10 1.20
A1 0.20 0.25 0.30
A2 0.48 0.53 0.58
D 5.90 6.00 6.10
E 7.90 8.00 8.10
D1 --- 3.75 ---
E1 --- 5.25 ---
e --- 0.75 ---
b 0.30 0.35 0.40
Note:
1. THE BALL DIAMETER, BALL PITCH, STAND-OFF & PACKAGE THICKNESS
ARE DIFFERENT FROM JEDEC SPEC MO192 (LOW PROFILE BGA FAMILY).
2. PRIMARY DATUM C AND SEATING PLANE ARE DEFINED BY THE SPHERICAL CROWNS
OF THE SOLDER BALLS.
3. DIMENSION b IS MEASURED AT THE MAXIMUM.
THERE SHALL BE A MINIMUM CLEARANCE OF 0.25mm BETWEEN THE EDGE OF THE
SOLDER BALL AND THE BODY EDGE.
4. BALL PAD OPENING OF SUBSTRATE IS Φ 0.3mm (SMD)
SUGGEST TO DESIGN THE PCB LAND SIZE AS Φ 0.3mm (NSMD)
