STTH2R02-Y Automotive ultrafast recovery diode Datasheet - production data Description A This device uses ST's new 200 V planar Pt doping technology, and is specially suited for switching mode base drive and transistor circuits. K Packaged in SMB, it is intended for use in low voltage, high frequency inverters, freewheeling and polarity protection in automotive applications. A Table 1: Device summary K SMB Features AEC-Q101 qualified Very low conduction losses Negligible switching losses Low forward and reverse recovery times High junction temperature PPAP capable February 2017 DocID17934 Rev 2 This is information on a product in full production. Symbol Value IF(AV) 2A VRRM 200 V Tj (max.) 175 C VF (typ.) 0.7 V trr (typ.) 15 ns 1/9 www.st.com Characteristics 1 STTH2R02-Y Characteristics Table 2: Absolute ratings (limiting values per diode at 25 C, unless otherwise specified) Symbol Parameter VRRM Repetitive peak reverse voltage IFRM Repetitive peak forward current Value Unit 200 V 60 A 60 A tp = 5 s, f = 5 kHz IF(RMS) Forward rms current IF(AV) Average forward current = 0.5, square wave Tlead = 90 C 2 A IFSM Surge non repetitive forward current tp = 10 ms sinusoidal 75 A Tstg Storage temperature range -65 to +175 C -40 to +175 C Maximum operating junction Tj temperature(1) Notes: (1)(dP tot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink. Table 3: Thermal parameters Symbol Rth(j-l) Parameter Maximum Unit 30 C/W Junction to lead Table 4: Static electrical characteristics (per diode) Symbol IR(1) Parameter Test conditions Reverse leakage current Tj = 25 C Tj = 125 C Tj = 25 C VF(2) VR = VRRM IF = 6 A Tj = 25 C Forward voltage drop Tj = 100 C IF = 2 A Tj = 150 C Notes: (1)Pulse test: tp = 5 ms, < 2% (2)Pulse test: tp = 380 s, < 2 % To evaluate the conduction losses, use the following equation: P = 0.68 x IF(AV) + 0.06 x IF2(RMS) 2/9 DocID17934 Rev 2 Min. Typ. - Max. 3 2 - 20 Unit A 1.20 - 0.89 1.0 - 0.76 0.85 - 0.70 0.80 V STTH2R02-Y Characteristics Table 5: Dynamic characteristics Symbol trr tfr Parameters Test conditions Reverse recovery time Tj = 25 C Forward recovery time Tj = 25 C VFP Forward recovery voltage IRM Reverse recovery current Tj = 125 C Min. Typ. Max. IF = 1 A; dIF/dt = -50 A/s; VR = 30 V - 23 30 IF = 1 A; dIF/dt = -100 A/s; VR = 30 V - 15 20 IF = 2 A; dIF/dt = 100 A/s; VFR = 1.1 x VFmax - 40 IF = 2 A; dlF/dt = 100 A/s - 2.0 IF = 2 A; dIF/dt = -200 A/s; VR = 160 V - 3 DocID17934 Rev 2 Unit ns V 4 A 3/9 Characteristics 1.1 STTH2R02-Y Characteristics (curves) Figure 2: Forward voltage drop versus forward current (typical values) Figure 1: Peak current versus duty cycle 100 IM (A) T IM 80 d=tp/T tp 60 40 P=5W P=2W P=1W 20 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Figure 3: Forward voltage drop versus forward current (maximum values) Figure 4: Relative variation of thermal impedance junction to ambient versus pulse duration 1.0 Zth(j-a) /Rth(j-a) SMB Scu=1cm 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 Single pulse 0.0 1.E-03 Figure 5: Junction capacitance versus reverse applied voltage (typical values) 100 F = 1 MHz Vosc = 30 mV RMS Tj = 25 C 10 VR(V) 1 4/9 10 100 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 Figure 6: Reverse recovery charges versus dIF/dt (typical values) C(pF) 1 t P(s) 1000 DocID17934 Rev 2 STTH2R02-Y Characteristics Figure 7: Reverse recovery time versus dIF/dt (typical values) Figure 8: Peak reverse recovery current versus dIF/dt (typical values) Figure 9: Dynamic parameters versus junction temperature Figure 10: Thermal resistance, junction to ambient, versus copper surface under each lead DocID17934 Rev 2 5/9 Package information 2 STTH2R02-Y Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK(R) packages, depending on their level of environmental compliance. ECOPACK (R) specifications, grade definitions and product status are available at: www.st.com. ECOPACK(R) is an ST trademark. 2.1 Epoxy meets UL94, V0 Lead-free package SMB package information Figure 11: SMB package outline 6/9 DocID17934 Rev 2 STTH2R02-Y Package information Table 6: SMB package mechanical data Dimensions Ref. Millimeters Inches Min. Max. Min. Max. A1 1.90 2.45 0.0748 0.0965 A2 0.05 0.20 0.0020 0.0079 b 1.95 2.20 0.0768 0.0867 c 0.15 0.40 0.0059 0.0157 D 3.30 3.95 0.1299 0.1556 E 5.10 5.60 0.2008 0.2205 E1 4.05 4.60 0.1594 0.1811 L 0.75 1.50 0.0295 0.0591 Figure 12: SMB recommended Footprint 1.62 0.064 2.60 (0.102) 1.62 0.064 2.18 (0.086) 5.84 (0.230) millimeters (inches) DocID17934 Rev 2 7/9 Ordering information 3 STTH2R02-Y Ordering information Figure 13: Ordering information scheme STTH 2 R 02 XX Ultrafast switching diode Average forward current 2=2A Model R Repetitive peak reverse voltage 02 = 200 V Package U = SMB in tape and reel Y = Automotive grade Table 7: Ordering information 4 Order code Marking Package Weight Base qty. Delivery mode STTH2R02UY R2UY SMB 0.110 g 2500 Tape and reel Revision history Table 8: Document revision history 8/9 Date Revision Changes 20-Oct-2010 1 Initial release. 02-Feb-2017 2 Updated Figure 4: "Relative variation of thermal impedance junction to case versus pulse duration". 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All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. (c) 2017 STMicroelectronics - All rights reserved DocID17934 Rev 2 9/9