ULN2804AFWGOELM - TOSHIBA - Datasheet.Live

February 2017

DocID17934 Rev 2

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This is information on a product in full production.

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STTH2R02-Y

Automotive ultrafast recovery diode

Datasheet - production data

Features

 AEC-Q101 qualified

 Very low conduction losses

 Negligible switching losses

 Low forward and reverse recovery times

 High junction temperature

 PPAP capable

Description

This device uses ST's new 200 V planar Pt

doping technology, and is specially suited for

switching mode base drive and transistor circuits.

Packaged in SMB, it is intended for use in low

voltage, high frequency inverters, freewheeling

and polarity protection in automotive applications.

Table 1: Device summary

Symbol

Value

IF(AV)

2 A

VRRM

200 V

Tj (max.)

175 °C

VF (typ.)

0.7 V

trr (typ.)

15 ns

SMB

Characteristics

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1 Characteristics

Table 2: Absolute ratings (limiting values per diode at 25 °C, unless otherwise specified)

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage

200

IFRM

Repetitive peak forward current

tp = 5 μs, f = 5 kHz

IF(RMS)

Forward rms current

IF(AV)

Average forward current

δ = 0.5, square wave

Tlead = 90 °C

IFSM

Surge non repetitive forward current

tp = 10 ms sinusoidal

Tstg

Storage temperature range

-65 to +175

°C

Maximum operating junction temperature(1)

-40 to +175

°C

Notes:

(1)(dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink.

Table 3: Thermal parameters

Symbol

Parameter

Maximum

Unit

Rth(j-l)

Junction to lead

°C/W

Table 4: Static electrical characteristics (per diode)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

IR(1)

Reverse leakage current

Tj = 25 °C

VR = VRRM

µA

Tj = 125 °C

VF(2)

Forward voltage drop

Tj = 25 °C

IF = 6 A

1.20

Tj = 25 °C

IF = 2 A

0.89

1.0

Tj = 100 °C

0.76

0.85

Tj = 150 °C

0.70

0.80

Notes:

(1)Pulse test: tp = 5 ms, δ < 2%

(2)Pulse test: tp = 380 μs, δ < 2 %

To evaluate the conduction losses, use the following equation:

P = 0.68 x IF(AV) + 0.06 x IF2(RMS)

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Characteristics

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Table 5: Dynamic characteristics

Symbol

Parameters

Test conditions

Min.

Typ.

Max.

Unit

trr

Reverse recovery time

Tj = 25 °C

IF = 1 A;

dIF/dt = -50 A/μs;

VR = 30 V

IF = 1 A;

dIF/dt = -100 A/μs;

VR = 30 V

tfr

Forward recovery time

Tj = 25 °C

IF = 2 A;

dIF/dt = 100 A/μs;

VFR = 1.1 x VFmax

VFP

Forward recovery voltage

IF = 2 A;

dlF/dt = 100 A/µs

2.0

IRM

Reverse recovery current

Tj = 125 °C

IF = 2 A;

dIF/dt = -200 A/μs;

VR = 160 V

Characteristics

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1.1 Characteristics (curves)

Figure 1: Peak current versus duty cycle

Figure 2: Forward voltage drop versus forward

current (typical values)

Figure 3: Forward voltage drop versus forward

current (maximum values)

Figure 4: Relative variation of thermal impedance

junction to ambient versus pulse duration

Figure 5: Junction capacitance versus reverse

applied voltage (typical values)

Figure 6: Reverse recovery charges versus dIF/dt

(typical values)

IM(A)

100

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

d=tp/T tp

IMT

δ=tp/T tp

P = 2 WP = 2 W P = 1 WP = 1W

P = 5 WP = 5 W

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03

Single pulse

SMB

Scu=1cm²

tP(s)

Zth(j-a)/Rth(j-a)

100

1 10 100 1000

C(pF)

F = 1 MHz

Vosc= 30 mVRMS

Tj= 25 °C

VR(V)

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Characteristics

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Figure 7: Reverse recovery time versus dIF/dt

(typical values)

Figure 8: Peak reverse recovery current versus

dIF/dt (typical values)

Figure 9: Dynamic parameters versus junction

temperature

Figure 10: Thermal resistance, junction to ambient,

versus copper surface under each lead

Package information

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2 Package information

In order to meet environmental requirements, ST offers these devices in different grades of

ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®

specifications, grade definitions and product status are available at: www.st.com.

ECOPACK® is an ST trademark.

 Epoxy meets UL94, V0

 Lead-free package

2.1 SMB package information

Figure 11: SMB package outline

STTH2R02-Y

Package information

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Table 6: SMB package mechanical data

Ref.

Dimensions

Millimeters

Inches

Min.

Max.

Min.

Max.

1.90

2.45

0.0748

0.0965

0.05

0.20

0.0020

0.0079

1.95

2.20

0.0768

0.0867

0.15

0.40

0.0059

0.0157

3.30

3.95

0.1299

0.1556

5.10

5.60

0.2008

0.2205

4.05

4.60

0.1594

0.1811

0.75

1.50

0.0295

0.0591

Figure 12: SMB recommended Footprint

millimeters

(inches)

1.62

0.064 1.62

0.064

2.60

(0.102)

5.84

(0.230)

2.18

(0.086)

Ordering information

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DocID17934 Rev 2

3 Ordering information

Figure 13: Ordering information scheme

Table 7: Ordering information

Order code

Marking

Package

Weight

Base qty.

Delivery mode

STTH2R02UY

R2UY

SMB

0.110 g

2500

Tape and reel

4 Revision history

Table 8: Document revision history

Date

Revision

Changes

20-Oct-2010

Initial release.

02-Feb-2017

Updated Figure 4: "Relative variation of thermal

impedance junction to case versus pulse duration".

STTH 2 R 02 XX

Ultrafast switching diode

Average forward current

2 = 2 A

02 = 200 V

U = SMB in tape and reel

Y = Automotive grade

Model R

Package

Repetitive peak reverse voltage

STTH2R02-Y

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