5STP12N8500 - Abb Switzerland Ltd. Semiconductors

ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.

V

D

R

M

=

8500

V

I

T(AV)M

=

1200

A

I

T(RMS)

=

1880

A

I

TSM

=

35×10

3

A

V

T0

=

1.25

V

r

T

=

0.48

m

Ω

Phase Control Thyristor

5STP 12N8500

Doc. No. 5SYA1044-03 May 07

• Patented free-floating silicon technology

• Low on-state and switching losses

• Designed for traction, energy and industrial applications

• Optimum power handling capability

• Interdigitated amplifying gate

Blocking

Maximum rated values 1)

Parameter Symbol

Conditions 5STP 12N8500 Unit

Max. surge peak forward and

reverse blocking voltage VDSM,

VRSM tp = 10 ms, f = 5 Hz

Tvj = 5…90°C, Note 1 8500 V

Max repetitive peak forward

and reverse blocking voltage

VDRM,

VRRM 8500 V

Max crest working forward

and reverse voltages VDWM,

VRWM

f = 50 Hz, tp = 10 ms, tp1 = 250 µs,

Tvj = 5…90°C, Note 1, Note 2

4300 V

Critical rate of rise of

commutating voltage dv/dtcrit Exp. to 5360 V, Tvj = 90°C 2000 V/µs

Characteristic values

Parameter Symbol

Conditions min typ max Unit

Forward leakage current IDRM VDRM, Tvj = 90°C 1000 mA

Reverse leakage current IRRM VRRM, Tvj = 90°C 400 mA

Note 1: Voltage de-rating factor of 0.11% per °C is applicable for Tvj below +5 °C

Note 2: Recommended minimum ratio of VDRM / VDWM or VRRM / VRWM = 2. See App. Note 5SYA 2051.

Mechanical data

Maximum rated values 1)

Parameter Symbol

Conditions min typ max Unit

Mounting force FM 81 90 108 kN

Acceleration a Device unclamped 50 m/s2

Acceleration a Device clamped 100 m/s2

Characteristic values

Parameter Symbol

Conditions min typ max Unit

Weight m 2.9 kg

Housing thickness H FM = 90 kN, Ta = 25 °C 35.3 36 mm

Surface creepage distance DS 56 mm

Air strike distance Da 22 mm

1) Maximum rated values indicate limits beyond which damage to the device may occur

5STP 12N8500

ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.

Doc. No. 5SYA1044-03 May 07 page 2 of 7

On-state

Maximum rated values 1)

Parameter Symbol

Conditions min typ max Unit

Average on-state current IT(AV)M Half sine wave, Tc = 70 °C 1200 A

RMS on-state current IT(RMS) 1880 A

Peak non-repetitive surge

current ITSM 35×103 A

Limiting load integral I2t

tp = 10 ms, Tvj = 90 °C, sine wave

after surge: VD = VR= 0 V 6.13×106 A2s

Peak non-repetitive surge

current ITSM 38×103 A

Limiting load integral I2t

tp = 8.3 ms, Tvj = 90 °C, sine wave

after surge: VD = VR= 0 V 5.99×106 A2s

Characteristic values

Parameter Symbol

Conditions min typ max Unit

On-state voltage VT IT = 1500 A, Tvj = 90 °C 2 V

Threshold voltage V(T0) 1.25 V

Slope resistance rT IT = 700 A - 2100 A, Tvj= 90 °C 0.48 mΩ

Holding current IH Tvj = 25 °C 150 mA

Tvj = 90 °C 125 mA

Latching current IL Tvj = 25 °C 600 mA

Tvj = 90 °C 800 mA

Switching

Maximum rated values 1)

Parameter Symbol

Conditions min typ max Unit

Critical rate of rise of on-

state current di/dtcrit Cont.

f = 50 Hz

250 A/µs

Critical rate of rise of on-

state current di/dtcrit

Tvj = 90 °C,

ITRM = 2000 A,

VD ≤ 5360 V,

IFG = 2 A, tr = 0.5 µs Cont.

f = 1Hz 1000 A/µs

Circuit-commutated turn-off

time tq Tvj = 90°C, ITRM = 2000 A,

VR = 200 V, diT/dt = -1.5 A/µs,

VD ≤ 0.67⋅VDRM, dvD/dt = 20 V/µs

600 µs

Characteristic values

Parameter Symbol

Conditions min typ max Unit

Reverse recovery charge Qrr 2500 5500 µAs

Reverse recovery current IRM Tvj = 90°C, ITRM = 2000 A,

VR = 200 V,

diT/dt = -1.5 A/µs 40 110 A

Gate turn-on delay time tgd Tvj = 25 °C, VD = 0.4⋅VRM, IFG = 2 A,

tr = 0.5 µs 3 µs

5STP 12N8500

ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.

Doc. No. 5SYA1044-03 May 07 page 3 of 7

Triggering

Maximum rated values 1)

Parameter Symbol

Conditions min typ max Unit

Peak forward gate voltage V

FGM 12 V

Peak forward gate current IFGM 10 A

Peak reverse gate voltage V

RGM 10 V

Average gate power loss PG(AV) see Fig. 9 W

Characteristic values

Parameter Symbol

Conditions min typ max Unit

Gate-trigger voltage VGT Tvj = 25 °C 2.6 V

Gate-trigger current IGT Tvj = 25 °C 400 mA

Gate non-trigger voltage VGD VD = 0.4 x VDRM, Tvjmax = 90 °C 0.3 V

Gate non-trigger current IGD VD = 0.4 x VDRM, Tvjmax = 90°C 10 mA

Thermal

Maximum rated values 1)

Parameter Symbol

Conditions min typ max Unit

Operating junction

temperature range Tvj 90 °C

Storage temperature range T

stg -40 140 °C

Characteristic values

Parameter Symbol

Conditions min typ max Unit

Thermal resistance junction

to case Rth(j-c) Double-side cooled

Fm = 81...108 kN 5.7 K/kW

Rth(j-c)A Anode-side cooled

Fm = 81...108 kN 11.4 K/kW

Rth(j-c)C Cathode-side cooled

Fm = 81...108 kN 11.4 K/kW

Thermal resistance case to

heatsink Rth(c-h) Double-side cooled

Fm = 81...108 kN 1 K/kW

Rth(c-h) Single-side cooled

Fm = 81...108 kN 2 K/kW

Analytical function for transient thermal

impedance:

)e-(1R = (t)Z n

1i

t/-

i c)-th(j ∑

=

i

τ

i 1 2 3 4

Ri(K/kW) 3.400 1.260 0.680 0.350

τi(s) 0.8685 0.1572 0.0219 0.0078

Fig. 1 Transient thermal impedance (junction-to-

case) vs. time

5STP 12N8500

ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.

Doc. No. 5SYA1044-03 May 07 page 4 of 7

On-state characteristic model:

T

ID

T

IC

T

IBA

T

V

⋅++⋅+⋅+= )1ln(

max

Valid for iT = 200 – 4000 A

A B C D

1.97 -180.0×10-6 -300.0×10-3

62.0×10-3

Fig. 2 On-state characteristics,

Tj=125°C, 10ms half sine Fig. 3 On-state voltage characteristics

020040060080010001200140016001

8

0

I

T

A

V

(

A

)

70

75

80

85

90

T

case

(

°

C

)

D

C

1

8

0

°

r

e

c

t

a

n

g

u

l

a

r

1

8

0

°

s

i

n

e

1

2

0

°

r

e

c

t

a

n

g

u

l

a

r

5STP

12N8500

D

o

u

b

l

e

-

s

i

d

e

d

c

o

l

i

n

g

Fig. 4 On-state power dissipation vs. mean on-state

current, turn-on losses excluded Fig. 5 Max. permissible case temperature vs. mean

on-state current, switching losses ignored

5STP 12N8500

ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.

Doc. No. 5SYA1044-03 May 07 page 5 of 7

Fig. 6 Surge on-state current vs. pulse length,

half-sine wave Fig. 7 Surge on-state current vs. number of pulses,

half-sine wave, 10 ms, 50Hz

IGM

IGon

100 %

90 %

10 %

IGM ≈ 2..5 A

IGon ≥ 1.5 IGT

diG/dt ≥ 2 A/µs

tr≤ 1 µs

tp(IGM)≈ 5...20 µs

diG/dt

tr

tp (IGM)

IG (t)

t

tp (IGon)

Fig. 8 Recommended gate current waveform Fig. 9 Max. peak gate power loss

Fig. 10 Reverse recovery charge vs. decay rate of

on-state current Fig. 11 Peak reverse recovery current vs. decay rate

of on-state current

5STP 12N8500

ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.

Doc. No. 5SYA1044-03 May 07 page 6 of 7

Turn-on and Turn-off losses

Fig. 12 Turn-on energy, half sinusoidal waves Fig. 13 Turn-on energy, rectangular waves

Fig. 14 Turn-off energy, half sinusoidal waves Fig. 15 Turn-off energy, rectangular waves

Qrr

IT(t), V(t)

t

-diT/dt

IT(t)

-V0

-VRRM

V(t)

-IRRM

-dv/dtcom

Total power loss for repetitive waveforms:

fWfWPP offonTTOT ⋅+⋅+=

where

dtIVI

T

PT

TTTT ∫⋅= 0)(

1

Fig. 16 Current and voltage waveforms at turn-off Fig. 17 Relationships for power loss

5STP 12N8500

ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.

ABB Switzerland Ltd Doc. No. 5SYA1044-03 May 07

Semiconductors

Fabrikstrasse 3

CH-5600 Lenzburg, Switzerland

Telephone +41 (0)58 586 1419

Fax +41 (0)58 586 1306

Email abbsem@ch.abb.com

Internet

www.abb.com/semiconductors

g

Fig. 18 Device Outline Drawing