Radiation Hardened Adjustable Positive Voltage Regulator HS-117RH, HS-117EH Features The Radiation Hardened HS-117RH, HS-117EH are adjustable positive voltage linear regulator capable of operating with input voltages up to 40VDC. The output voltage is adjustable from 1.2V to 37V with two external resistors. The device is capable of sourcing from 5mA to 1.25APEAK (0.5 APEAK for the TO-39 package). Protection is provided by the on-chip thermal shutdown and output current limiting circuitry. * Electrically Screened to DLA SMD # 5962-99547 The Intersil HS-117RH, HS-117EH has advantages over other industry standard types, in that circuitry is incorporated to minimize the effects of radiation and temperature on device stability. Constructed with the Intersil dielectrically isolated Rad Hard Silicon Gate (RSG) process, the HS-117RH, HS-117EH are immune to single event latch-up and has been specifically designed to provide highly reliable performance in harsh radiation environments. * QML Qualified per MIL-PRF-38535 Requirements * Radiation Environment - 300 krad (Si) (Max) - Latch-up Immune * Superior Temperature Stability * Overcurrent and Overtemperature Protection Applications * Adjustable Linear Voltage Regulators * Adjustable Linear Current Regulator Specifications for Rad Hard QML devices are controlled by the Defense Logistics Agency (DLA). The SMD numbers listed here must be used when ordering. Detailed electrical specifications for the HS-117RH, HS-117EH are contained in SMD 5962-99547. A "hot-link" is provided on our website for downloading. Pin Configurations HSYE-117RH (SMD.5 CLCC) BOTTOM VIEW HS2-117RH (TO-39 CAN) BOTTOM VIEW ADJUST 2 2 3 OUT IN 1 1 - ADJUST 2 - IN 3 - OUT 3 1 HS9S-117RH (TO-257AA FLANGE MOUNT) TOP VIEW September 4, 2012 FN4560.9 NOTE: No current JEDEC outline for the SMD.5 package. Refer to SMD for package dimensions. The TO-257 is a totally isolated metal package 3 IN 2 OUT 1 ADJUST 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 1-888-468-3774 | Copyright Intersil Americas Inc. 2003, 2007, 2011, 2012. All Rights Reserved Intersil (and design) is a trademark owned by Intersil Corporation or one of its subsidiaries. All other trademarks mentioned are the property of their respective owners. HS-117RH, HS-117EH Ordering Information ORDERING NUMBER INTERNAL MKT. NUMBER TEMP. RANGE (C) PACKAGE PKG DWG. # 5962F9954702VUC HS2-117EH-Q -55 to +125 3 LD METAL CAN T3.C 5962F9954702V9A HS0-117EH-Q -55 to +125 DIE 5962F9954702VXC HS9S-117EH-Q -55 to +125 3 LD TO-257 T3.D 5962F9954702VYC HSYE-117EH-Q -55 to +125 3 PAD LCC J3.A 5962F9954701VUC HS2-117RH-Q -55 to +125 3 LD METAL CAN T3.C 5962F9954701QUC HS2-117RH-8 -55 to +125 3 LD METAL CAN T3.C 5962F9954701VXC HS9S-117RH-Q -55 to +125 3 LD TO-257 T3.D 5962F9954701QXC HS9S-117RH-8 -55 to +125 3 LD TO-257 T3.D 5962F9954701VYC HSYE-117RH-Q -55 to +125 3 PAD LCC J3.A 5962F9954701QYC HSYE-117RH-8 -55 to +125 3 PAD LCC J3.A HS2-117RH/Proto HS2-117RH/Proto -55 to +125 3 LD TO-257 T3.C HS9S-117RH/Proto HS9S-117RH/Proto -55 to +125 3 LD TO-257 T3.D HSYE-117RH/Proto HSYE-117RH/Proto -55 to +125 3 PAD LCC 5962F9954701QUC HS2-117RH-8S9000 -55 to +125 3 LD METAL CAN T3.C 5962F9954701VXC HS9S-117RH-QS9000 -55 to +125 3 LD TO-257 T3.D 5962F9954701VYC HSYE-117RH-QS9000 -55 to +125 3 PAD LCC J3.A 5962F9954701VYC HSYE-117RH-QS9002 -55 to +125 3 PAD LCC J3.A NOTE: 1. These Intersil Pb-free Hermetic packaged products employ 100% Au plate - e4 termination finish, which is RoHS compliant and compatible with both SnPb and Pb-free soldering operations. 2 FN4560.9 September 4, 2012 HS-117RH, HS-117EH Die Characteristics Substrate Radiation Hardened Silicon Gate, Dielectric Isolation DIE DIMENSIONS 2616mm x 2794mm (103 mils x 110 mils) 483mm 25.4mm (19 mils 1 mil) Backside Finish Gold INTERFACE MATERIALS ASSEMBLY RELATED INFORMATION Glassivation Substrate Potential Type: Silox (SiO2) Thickness: 8.0kA 1.0kA Unbiased (DI) ADDITIONAL INFORMATION Top Metallization Type: AlSiCu Thickness: 16.0kA 2kA Worst Case Current Density <2.0 x 105 A/cm2 Transistor Count 95 Metallization Mask Layout HS-117RH, HS-117EH VIN VIN VOUT VOUT ADJ VOUTK For additional products, see www.intersil.com/product_tree Intersil products are manufactured, assembled and tested utilizing ISO9000 quality systems as noted in the quality certifications found at www.intersil.com/design/quality Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see www.intersil.com 3 FN4560.9 September 4, 2012