© Semiconductor Components Industries, LLC, 2011
October, 2011 − Rev. 7
1Publication Order Number:
2N6667/D
2N6667, 2N6668
Darlington Silicon
Power Transistors
Designed for general−purpose amplifier and low speed switching
applications.
•High DC Current Gain −
hFE = 3500 (Typ) @ IC = 4.0 Adc
•Collector−Emitter Sustaining Voltage − @ 200 mAdc
VCEO(sus) = 60 Vdc (Min) − 2N6667
= 80 Vdc (Min) − 2N6668
•Low Collector−Emitter Saturation Voltage −
VCE(sat) = 2.0 Vdc (Max)@ IC = 5.0 Adc
•Monolithic Construction with Built−In Base−Emitter Shunt Resistors
•TO−220AB Compact Package
•Complementary to 2N6387, 2N6388
•Pb−Free Packages are Available*
Figure 1. Darlington Schematic
BASE
EMITTER
COLLECTOR
≈8 k ≈120
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Device Package Shipping
ORDERING INFORMATION
2N6667 TO−220AB 50 Units/Rail
MARKING
DIAGRAM
PNP SILICON
DARLINGTON
POWER TRANSISTORS
10 A, 60−80 V, 65 W
x = 7 or 8
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
2N6667G TO−220AB
(Pb−Free)
50 Units/Rail
2N6668 TO−220AB 50 Units/Rail
2N6668G TO−220AB
(Pb−Free)
50 Units/Rail
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CASE 221A−09
TO−220AB
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
123
4
2N666x
AYWWG
2N6667, 2N6668
http://onsemi.com
2
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
MAXIMUM RATINGS (Note 1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Rating
ÎÎÎÎÎ
ÎÎÎÎÎ
Symbol
ÎÎÎÎÎ
ÎÎÎÎÎ
2N6667
ÎÎÎÎÎ
ÎÎÎÎÎ
2N6668
ÎÎÎ
ÎÎÎ
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector−Emitter Voltage
ÎÎÎÎÎ
ÎÎÎÎÎ
VCEO
ÎÎÎÎÎ
ÎÎÎÎÎ
60
ÎÎÎÎÎ
ÎÎÎÎÎ
80
ÎÎÎ
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector−Base Voltage
ÎÎÎÎÎ
ÎÎÎÎÎ
VCB
ÎÎÎÎÎ
ÎÎÎÎÎ
60
ÎÎÎÎÎ
ÎÎÎÎÎ
80
ÎÎÎ
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Emitter−Base Voltage
ÎÎÎÎÎ
ÎÎÎÎÎ
VEB
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
5.0
ÎÎÎ
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Current −Continuous
−Peak
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
IC
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
10
15
ÎÎÎ
ÎÎÎ
ÎÎÎ
Adc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Base Current
ÎÎÎÎÎ
ÎÎÎÎÎ
IB
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
250
ÎÎÎ
ÎÎÎ
mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Total Device Dissipation @ TC = 25_C
Derate above 25_C
ÎÎÎÎÎ
ÎÎÎÎÎ
PD
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
65
0.52
ÎÎÎ
ÎÎÎ
W
W/_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Total Device Dissipation @ TA = 25_C
Derate above 25_C
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
PD
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
2.0
0.016
ÎÎÎ
ÎÎÎ
ÎÎÎ
W
W/_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Operating and Storage Junction Temperature Range
ÎÎÎÎÎ
ÎÎÎÎÎ
TJ, Tstg
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
–65 to +150
ÎÎÎ
ÎÎÎ
_C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
THERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Characteristic
ÎÎÎÎÎ
ÎÎÎÎÎ
Symbol
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
Max
ÎÎÎ
ÎÎÎ
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Thermal Resistance, Junction to Case
ÎÎÎÎÎ
ÎÎÎÎÎ
RqJC
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
1.92
ÎÎÎ
ÎÎÎ
_C/W
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Thermal Resistance, Junction to Ambient
ÎÎÎÎÎ
ÎÎÎÎÎ
RqJA
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
62.5
ÎÎÎ
ÎÎÎ
_C/W
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ELECTRICAL CHARACTERISTICS (Note 1) (TC = 25_C unless otherwise noted)
Characteristic
ÎÎÎÎÎ
ÎÎÎÎÎ
Symbol
ÎÎÎ
ÎÎÎ
Min
ÎÎÎÎ
ÎÎÎÎ
Max
ÎÎÎ
ÎÎÎ
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 2) 2N6667
(IC = 200 mAdc, IB = 0) 2N6668
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
VCEO(sus)
ÎÎÎ
ÎÎÎ
ÎÎÎ
60
80
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
−
−
ÎÎÎ
ÎÎÎ
ÎÎÎ
Vdc
Collector Cutoff Current (VCE = 60 Vdc, IB = 0) 2N6667
(VCE = 80 Vdc, IB = 0) 2N6668
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ICEO
ÎÎÎ
ÎÎÎ
ÎÎÎ
−
−
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
1.0
1.0
ÎÎÎ
ÎÎÎ
ÎÎÎ
mAdc
Collector Cutoff Current
(VCE = 60 Vdc, VEB(off) = 1.5 Vdc) 2N6667
(VCE = 80 Vdc, VEB(off) = 1.5 Vdc) 2N6668
(VCE = 60 Vdc, VEB(off) = 1.5 Vdc, TC = 125_C) 2N6667
(VCE = 80 Vdc, VEB(off) = 1.5 Vdc, TC = 125_C) 2N6668
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ICEX
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
−
−
−
−
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
300
300
3.0
3.0
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
mAdc
mAdc
Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)
ÎÎÎÎÎ
ÎÎÎÎÎ
IEBO
ÎÎÎ
ÎÎÎ
−
ÎÎÎÎ
ÎÎÎÎ
5.0
ÎÎÎ
ÎÎÎ
mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ON CHARACTERISTICS (Note 1)
DC Current Gain (IC = 5.0 Adc, VCE = 3.0 Vdc)
(IC = 10 Adc, VCE = 3.0 Vdc)
ÎÎÎÎÎ
ÎÎÎÎÎ
hFE
ÎÎÎ
ÎÎÎ
1000
100
ÎÎÎÎ
ÎÎÎÎ
20000
−
ÎÎÎ
ÎÎÎ
−
Collector−Emitter Saturation Voltage (IC = 5.0 Adc, IB = 0.01 Adc)
(IC = 10 Adc, IB = 0.1 Adc)
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
VCE(sat)
ÎÎÎ
ÎÎÎ
ÎÎÎ
−
−
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
2.0
3.0
ÎÎÎ
ÎÎÎ
ÎÎÎ
Vdc
Base−Emitter Saturation Voltage(IC = 5.0 Adc, IB = 0.01 Adc)
(IC = 10 Adc, IB = 0.1 Adc)
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
VBE(sat)
ÎÎÎ
ÎÎÎ
ÎÎÎ
−
−
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
2.8
4.5
ÎÎÎ
ÎÎÎ
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DYNAMIC CHARACTERISTICS
Current Gain − Bandwidth Product (IC = 1.0 Adc, VCE = 5.0 Vdc, ftest = 1.0 MHz)
ÎÎÎÎÎ
|hfe|
ÎÎÎ
20
ÎÎÎÎ
−
ÎÎÎ
−
Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
ÎÎÎÎÎ
ÎÎÎÎÎ
Cob
ÎÎÎ
ÎÎÎ
−
ÎÎÎÎ
ÎÎÎÎ
200
ÎÎÎ
ÎÎÎ
pF
Small−Signal Current Gain (IC = 1.0 Adc, VCE = 5.0 Vdc, f = 1.0 kHz)
ÎÎÎÎÎ
ÎÎÎÎÎ
hfe
ÎÎÎ
ÎÎÎ
1000
ÎÎÎÎ
ÎÎÎÎ
−
ÎÎÎ
ÎÎÎ
−
1. Indicates JEDEC Registered Data.
2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
2N6667, 2N6668
http://onsemi.com
3
Figure 2. Switching Times Test Circuit
0
VCC
- 30 V
SCOPE
TUT
+ 4.0 V
tr, tf v 10 ns
DUTY CYCLE = 1.0%
RC
D1, MUST BE FAST RECOVERY TYPES e.g.,
1N5825 USED ABOVE IB [ 100 mA
MSD6100 USED BELOW IB [ 100 mA
25 μs
D1
51
RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
V2
APPROX
+ 8 V
V1
APPROX
- 12 V
[ 8 k [ 120
FOR td AND tr, D1 IS DISCONNECTED AND V2 = 0
RB
t, TIME (s)μ
80
40
20
020 40 80 100 120 160
Figure 3. Power Derating
T, TEMPERATURE (°C)
PD, POWER DISSIPATION (WATTS)
60
TATC
4
2
1
3
0 60 140
TA
TC
0.1
Figure 4. Typical Switching Times
IC, COLLECTOR CURRENT (AMPS)
5
0.7
0.3
0.2
0.2 10
VCC = 30 V
IC/IB = 250
IB1 = IB2
TJ = 25°C
tf
15
ts
tr
0.1
1
3
0.5 2
.td
0.5
2
7
0.3 0.7 3 7
10
Figure 5. Thermal Response
t, TIME (ms)
1
0.01
0.01
0.5
0.3
0.2
0.1
0.05
0.03
0.02
0.02
r(t) NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
0.05 0.1 0.2 0.5 1 2 5 10 20 50 100 200 1000500
ZθJC(t) = r(t) RθJC
RθJC = 1.92°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) RθJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
D = 0.5
SINGLE PULSE
0.05
0.1
0.02
0.01
0.2
2N6667, 2N6668
http://onsemi.com
4
BONDING WIRE LIMIT
THERMAL LIMIT @ TC = 25°C
SECOND BREAKDOWN LIMIT
20
1
Figure 6. Maximum Safe Operating Area
2
0.02 10 20 100
TJ = 150°C
0.2
5
0.5
IC, COLLECTOR CURRENT (AMPS)
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
10
50
1
0.1
dc
27037
2N6667
2N6668
CURVES APPLY BELOW RATED VCEO
1 ms
100 μs
5 ms
3
0.03
0.05
0.3
530
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 6 is based on TJ(pk) = 150_C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
< 150_C. TJ(pk) may be calculated from the data in Figure 5.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown.
10,000
1
Figure 7. Typical Small−Signal Current Gain
f, FREQUENCY (kHz)
10 2 5 10 20 50 100 200 1000
500
100
5000
hFE, SMALL-SIGNAL CURENT GAIN
20
200
500
2000
1000
50
TC = 25°C
VCE = 4 VOLTS
IC = 3 AMPS
300
0.1
Figure 8. Typical Capacitance
VR, REVERSE VOLTAGE (VOLTS)
30 12 5 20 10
0
10
C, CAPACITANCE (pF)
200
100
70
50
Cib Cob
500.2 0.5
TJ = 25°C
37 7030 300
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
0.1
Figure 9. Typical DC Current Gain
IC, COLLECTOR CURRENT (AMPS)
0.2 0.3 0.5 0.7 1 2 10
500
300
hFE, DC CURRENT GAIN
TJ = 150°C
VCE = 3 V
200 7
20,000
5000
10,000
3000
2000
1000
35
Figure 10. Typical Collector Saturation Region
2.6
IB, BASE CURRENT (mA)
0.3 0.5 1 2 3 5 7 30
2.2
1.8
1.4
1
IC = 2 A
TJ = 25°C
4 A 6 A
0.6
0.7 2010
TJ = - 55°C
7000
700
TJ = 25°C
2N6667, 2N6668
http://onsemi.com
5
IC, COLLECTOR CURRENT (AMPS)
VBE(sat) @ IC/IB = 250
V, VOLTAGE (VOLTS)
Figure 11. Typical “On” Voltages
VCE(sat) @ IC/IB = 250
TJ = 25°C
VBE @ VCE = 3 V
0.1 0.2 0.3 0.5 0.7 1 2 10735
3
2
1.5
1
0.5
Figure 12. Typical Temperature Coefficients
+3
+2
0
-1
-2
-3
+5
+4
+1
2.5
0.1 0.2 0.3 0.5 0.7 1 2 10735
IC, COLLECTOR CURRENT (AMP)
V, TEMPERATURE COEFFICIENTS (mV/ C)°θ
-55°C to 25°C
25°C to 150°C
-55°C to 25°C
25°C to 150°C
θVB for VBE
-4
-5
∗θVC for VCE(sat)
hFE@VCE +3.0V
3
*IC/IB ≤
105
Figure 13. Typical Collector Cut−Off Region
VBE, BASE-EMITTER VOLTAGE (VOLTS)
102
101
100
, COLLECTOR CURRENT (A)μIC
10-1
VCE = 30 V
TJ = 150°C
100°C
25°C
REVERSE FORWARD
103
104
+0.2+0.4 0 -0.2 -0.4 -0.6 -0.8 -1.2 -1.4-1
+0.6
2N6667, 2N6668
http://onsemi.com
6
PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AG
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.570 0.620 14.48 15.75
B0.380 0.405 9.66 10.28
C0.160 0.190 4.07 4.82
D0.025 0.036 0.64 0.91
F0.142 0.161 3.61 4.09
G0.095 0.105 2.42 2.66
H0.110 0.161 2.80 4.10
J0.014 0.025 0.36 0.64
K0.500 0.562 12.70 14.27
L0.045 0.060 1.15 1.52
N0.190 0.210 4.83 5.33
Q0.100 0.120 2.54 3.04
R0.080 0.110 2.04 2.79
S0.045 0.055 1.15 1.39
T0.235 0.255 5.97 6.47
U0.000 0.050 0.00 1.27
V0.045 --- 1.15 ---
Z--- 0.080 --- 2.04
B
Q
H
Z
L
V
G
N
A
K
F
123
4
D
SEATING
PLANE
−T−
C
S
T
U
R
J
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