MMBTA92
PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
• Epitaxial Planar Die Construction
• Complementary NPN Types Available (MMBTA42)
• Ideal for Medium Power Amplification and Switching
• Lead, Halogen and Antimony Free, RoHS Compliant
"Green" Device (Notes 4 and 5)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: SOT-23
• Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminal Connections: See Diagram
• Terminals: Solderable per MIL-STD-202, Method 208
• Lead Free Plating (Matte Tin Finish annealed over
Alloy 42 leadframe).
• Marking Information: See Page 3
• Ordering Information: See Page 3
• Weight: 0.008 grams (approximate)
SOT-23
Dim Min Max
A 0.37 0.51
B 1.20 1.40
C 2.30 2.50
D 0.89 1.03
E 0.45 0.60
G 1.78 2.05
H 2.80 3.00
J 0.013 0.10
K 0.903 1.10
L 0.45 0.61
M 0.085 0.180
α 0° 8°
All Dimensions in mm
A
E
JL
TOP VIEW
M
BC
H
GD
K
C
BE
E
B
C
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic Symbol Value Unit
Collector-Base Voltage VCBO -300 V
Collector-Emitter Voltage VCEO -300 V
Emitter-Base Voltage VEBO -5.0 V
Collector Current (Note 1) (Note 3) IC -500 mA
Power Dissipation (Note 1) Pd 300 mW
Thermal Resistance, Junction to Ambient (Note 1) RθJA 417 °C/W
Operating and Storage and Temperature Range Tj, TSTG -55 to +150 °C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS (Note 2)
Collector-Base Breakdown Voltage V(BR)CBO -300 ⎯ V IC = -100μA, IE = 0
Collector-Emitter Breakdown Voltage V(BR)CEO -300 ⎯ V IC = -1.0mA, IB = 0
Emitter-Base Breakdown Voltage V(BR)EBO -5.0 ⎯ V IE = -100μA, IC = 0
Collector Cutoff Current ICBO ⎯ -250 nA VCB = -200V, IE = 0
Collector Cutoff Current IEBO ⎯ -100 nA VCE = -3.0V, IC = 0
ON CHARACTERISTICS (Note 2)
DC Current Gain hFE 25
40
25 ⎯ ⎯ IC = -1.0mA, VCE = -10V
IC = -10mA, VCE = -10V
IC = -30mA, VCE = -10V
Collector-Emitter Saturation Voltage VCE(SAT) ⎯ -0.5 V IC = -20mA, IB = -2.0mA
Base- Emitter Saturation Voltage VBE(SAT) ⎯ -0.9 V IC = -20mA, IB = -2.0mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance Ccb ⎯ 6.0 pF VCB = -20V, f = 1.0MHz,
IE = 0
Current Gain-Bandwidth Product fT 50 ⎯ MHz VCE = -20V, IC = -10mA,
f = 100MHz
Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration pulse test used to minimize self-heating effect.
3. When operated under collector-emitter saturation conditions within the safe operating area defined by the thermal resistance
rating (RθJA), power dissipation rating (Pd) and power derating curve (figure 1).
4. No purposefully added lead. Halogen and Antimony Free.
5. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date Code
V9 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
DS30060 Rev. 11 - 2 1 of 3
www.diodes.com MMBTA92
© Diodes Incorporated
110 100 1000
V,
C
O
LLE
C
T
O
R
T
O
E
M
ITTE
R
SATURATION VOLTAGE (V)
CE(SAT)
I , COLLECTOR CURRENT (mA)
Fig. 2, Collector Emitter Saturation V o lt age
vs. Collector Current
C
T= 25°C
A
T= -50°C
A
T=150°C
A
0.1
0
0.2
0.3
0.4
0.5
0.6
0.7
0.8
1.0
0.9 I
I
C
B
= 10
0
50
100
25 50 75 100 125 150 175 200
P
,
P
O
W
E
R
DI
S
S
I
P
A
T
I
O
N (mW)
D
T , AMBIENT TEMPERA TURE (°C)
Fig. 1, Max Power Dissipation vs
Ambient Tem perature
A
150
200
250
300
350
0
Note 1
1
10
1,000
10,000
100
110 1000
100
h, D
C
C
U
R
R
EN
T
G
AIN
FE
I , COLLECTOR CURRENT (mA)
Fig. 3, DC Current Gain vs
Collector Current
C
T = -50°C
A
T= 25°C
A
T= 150°C
A
V= 5V
CE
0.1
0.2
0.1 110
V , BASE EMI
100
T
T
E
R
V
O
L
T
A
G
E (V)
BE(ON)
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
V= 5V
CE
I , COLLECTOR CURRENT (mA)
Fig. 4, Base Emitter V oltage vs Collector Current
C
T= -50°C
A
T= 25°C
A
T = 150°C
A
1
10
100
110
f,
G
AI
N
BA
N
DWID
T
H
P
R
O
D
U
C
T
(M
H
z)
T
I , COLLECTOR CURRENT (mA)
Fig . 5, Ga in Ba ndw id t h Product vs
Colle c tor Current
C
V= 5V
CE
DS30060 Rev. 11 - 2 2 of 3
www.diodes.com MMBTA92
© Diodes Incorporated
Ordering Information (Note 6)
DS30060 Rev. 11 - 2 3 of 3
www.diodes.com MMBTA92
© Diodes Incorporated
Device Packaging Shipping
SOT-23 3000/Tape & Reel
MMBTA92-7-F
Notes: 6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
K3R = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
K3R
YM
Date Code Key
Year 1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012
Code J K L M N P R S T U V W X Y Z
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume an y liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages. LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
