2N5663 Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: * General purpose * Power Transistor * NPN silicon transistor * Screening and processing per MIL-PRF-19500 Appendix E * JAN level (2N5663J) * JANTX level (2N5663JX) * JANTXV level (2N5663JV) * QCI to the applicable level * 100% die visual inspection per MIL-STD-750 method 2072 for JANTXV * Radiation testing (total dose) upon request Features * * * * Benefits Please contact Semicoa for special configurations www.SEMICOA.com or (714) 979-1900 * Qualification Levels: JAN, JANTX, and JANTXV * Radiation testing available Absolute Maximum Ratings Parameter Collector-Emitter Voltage Hermetically sealed TO-5 metal can Also available in chip configuration Chip geometry 1031 Reference document: MIL-PRF-19500/454 TC = 25C unless otherwise specified Symbol VCEO Rating 300 Collector-Base Voltage VCBO 400 Unit Volts Volts Emitter-Base Voltage VEBO 6 Volts IC 2 A 1 5.7 15 150 W mW/C W mW/C -65 to +200 C Collector Current, Continuous Power Dissipation, TA = 25C Derate linearly above 25C Power Dissipation, TC = 25C Derate linearly above 100C Operating Junction Temperature Storage Temperature Copyright 2002 Rev. D PT PT TJ TSTG Semicoa Semiconductors, Inc. 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 www.SEMICOA.com Page 1 of 2 2N5663 Silicon NPN Transistor Data Sheet ELECTRICAL CHARACTERISTICS characteristics specified at TA = 25C Off Characteristics Parameter Symbol Collector-Emitter Breakdown Voltage V(BR)CEO IC = 10 mA 300 Units Volts Collector-Emitter Breakdown Voltage V(BR)CER IC = 10 mA, RBE = 100 400 Volts Emitter-Base Breakdown Voltage V(BR)EBO IE = 10 A VCB = 300 Volts VCB = 400 Volts VCE = 300 Volts VCE = 300 Volts, TA = 150C 6 Volts Collector-Base Cutoff Current Collector-Emitter Cutoff Current ICBO1 ICBO2 ICES1 ICES2 Test Conditions On Characteristics Min Typ Max 0.1 1.0 0.2 100 A mA A Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0% Parameter Symbol hFE1 hFE2 hFE3 hFE4 hFE5 DC Current Gain Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage VBEsat1 VBEsat2 VCEsat1 VCEsat2 Test Conditions IC = 50 mA, VCE = 2 Volts IC = 500 mA, VCE = 5 Volts IC = 1 A, VCE = 5 Volts IC = 2 A, VCE = 5 Volts IC = 500 mA, VCE = 5 Volts TA = -55C IC = 1 A, IB = 100 mA IC = 2 A, IB = 400 mA IC = 1 A, IB = 100 mA IC = 2 A, IB = 400 mA Min 25 25 15 5 10 Test Conditions VCE = 5 Volts, IC = 100 mA, f = 10 MHz VCB = 10 Volts, IE = 0 mA, 100 kHZ < f < 1 MHz Min Typ Max Units 75 1.2 1.5 0.4 0.8 Volts Max Units Volts Dynamic Characteristics Parameter Magnitude - Common Emitter, Short Circuit Forward Current Transfer Ratio Open Circuit Output Capacitance Symbol |hFE| COBO Typ 2 7 45 pF Max Switching Characteristics Parameter Symbol Test Conditions Saturated Turn-On Time tON IC = 500 mA, VCC = 100 Volts 250 Units ns Saturated Turn-Off Time tOFF IC = 500 mA, VCC = 100 Volts 1200 ns Copyright 2002 Rev. D Min Typ Semicoa Semiconductors, Inc. 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 www.SEMICOA.com Page 2 of 2