STPS10H100CT/CG/CR/CFP (R) HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS IF(AV) A1 K 2x5A VRRM 100 V Tj 175C VF (max) 0.61 V A2 K K FEATURES AND BENEFITS HIGH JUNCTION TEMPERATURE CAPABILITY FOR CONVERTERS LOCATED IN CONFINED ENVIRONMENT LOW LEAKAGE CURRENT AT HIGH TEMPERATURE LOW STATIC AND DYNAMIC LOSSES AS A RESULT OF THE SCHOTTKY BARRIER AVALANCHE CAPABILITY SPECIFIED A2 A1 A1 A2 K D2PAK I2PAK STPS10H100CG STPS10H100CR DESCRIPTION A2 A2 Schottky barrier rectifier designed for high frequency miniature Switched Mode Power Supplies such as adaptators and on board DC/DC converters. Packaged in TO-220AB, TO-220FPAB, D2PAK and I2PAK. A1 K A1 K TO-220AB STPS10H100CT TO-220FPAB STPS10H100CFP ABSOLUTE RATINGS (limiting values, per diode) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 100 V IF(RMS) RMS forward current 10 A 5 10 A 180 A 1 A 7200 W - 65 to + 175 C 175 C 10000 V/s IF(AV) Average forward current = 0.5 TO-220AB D2PAK / I2PAK Tc = 165C TO-220FPAB Tc = 160C per diode per device IFSM Surge non repetitive forward current tp = 10 ms sinusoidal IRRM Repetitive peak reverse current tp = 2 s square F = 1kHz PARM Repetitive peak avalanche power tp = 1s Tstg Tj dV/dt * : Storage temperature range Tj = 25C Maximum operating junction temperature * Critical rate of rise of reverse voltage dPtot 1 thermal runaway condition for a diode on its own heatsink < dTj Rth( j - a ) July 2003 - Ed: 3F 1/7 STPS10H100CT/CG/CR/CFP THERMAL RESISTANCES Symbol Rth (j-c) Parameter Junction to case D2PAK / I2PAK TO-220AB Rth (c) Rth (j-c) Junction to case TO-220FPAB Rth (c) Value Unit Per diode 2.2 C/W Total 1.3 Coupling 0.3 Per diode 4.5 Total 3.5 Coupling 2.5 C/W When the diodes 1 and 2 are used simultaneously : Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol Parameter Tests conditions IR * Reverse leakage current Tj = 25C Min. VR = VRRM Tj = 125C VF ** Forward voltage drop 1.3 Tj = 25C IF = 5 A Tj = 125C 0.57 Tj = 25C Max. Unit 3.5 A 4.5 mA 0.73 V 0.61 IF = 10 A 0.85 Tj = 125C Pulse test : Typ. 0.66 0.71 * tp = 5 ms, < 2% ** tp = 380 s, < 2% To evaluate the maximum conduction losses use the following equation : P = 0.51 x IF(AV) + 0.02 x IF2(RMS) Fig. 1: Average forward power dissipation versus average forward current (per diode). 4.0 3.5 IF(av)(A) PF(av)(W) = 0.1 = 0.2 6 = 0.5 Rth(j-a)=Rth(j-c) = 0.05 5 3.0 DPAK/IPAK/TO-220AB =1 2.5 4 2.0 IF(av) (A) =tp/T Rth(j-a)=15C/W 2 T 1.0 1 Tamb(C) tp 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 2/7 TO-220FPAB 3 1.5 0.5 Fig. 2: Average forward current versus ambient temperature (=0.5, per diode). 0 0 25 50 75 100 125 150 175 STPS10H100CT/CG/CR/CFP Fig. 3: Normalized avalanche power derating versus pulse duration. Fig. 4: Normalized avalanche power derating versus junction temperature. PARM(tp) PARM(1s) 1 PARM(tp) PARM(25C) 1.2 1 0.1 0.8 0.6 0.4 0.01 0.2 Tj(C) tp(s) 0.001 0.01 0.1 1 0 10 100 Fig. 5-1: Non repetitive surge peak forward current versus overload duration (maximum values, per diode) 120 0 1000 25 50 75 100 125 150 Fig. 5-2: Non repetitive surge peak forward current versus overload duration (maximum values, per diode)(TO-220FPAB) IM(A) IM(A) 80 70 100 60 80 Tc=50C 60 Tc=50C 50 40 Tc=75C Tc=75C 30 40 Tc=125C IM 20 t 0 1E-3 1E-2 1E-1 1E+0 Fig. 6-1: Relative variation of thermal impedance junction to case versus pulse duration (per diode). 1.0 0.4 t t(s) =0.5 0 1E-3 1E-2 1E-1 1E+0 Fig. 6-2: Relative variation of thermal impedance junction to case versus pulse duration (per diode).(TO-220FPAB) Zth(j-c)/Rth(j-c) Zth(j-c)/Rth(j-c) 1.0 0.8 0.6 Tc=125C IM 10 t(s) =0.5 20 0.8 = 0.5 0.6 = 0.2 0.4 T = 0.1 0.2 0.0 1E-3 = 0.5 T 0.2 Single pulse =tp/T tp(s) 1E-2 1E-1 tp = 0.2 = 0.1 tp(s) Single pulse 1E+0 0.0 1E-3 1E-2 1E-1 =tp/T 1E+0 tp 1E+1 3/7 STPS10H100CT/CG/CR/CFP Fig. 7: Reverse leakage current versus reverse voltage applied (typical values, per diode). 1E+4 Fig. 8: Junction capacitance versus reverse voltage applied (typical values, per diode). C(pF) IR(A) 1000 F=1MHz Tj=25C Tj=150C 1E+3 Tj=125C 1E+2 Tj=100C 1E+1 100 1E+0 Tj=25C 1E-1 VR(V) 1E-2 0 10 20 30 40 50 VR(V) 60 70 80 90 100 Fig. 9: Forward voltage drop versus forward current (maximum values, per diode). 100.0 10 1 2 5 10 20 50 100 Fig. 10: Thermal resistance junction to ambient versus copper surface under tab (Epoxy printed circuit board FR4, copper thickness: 35m) IFM(A) Rth(j-a) (C/W) 80 Tj=125C Typical values 70 60 Tj=125C 10.0 Tj=150C Typical values 50 Tj=25C 40 30 1.0 20 0.1 0.0 4/7 10 VFM(V) 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 S(Cu) (cm) 0 2 4 6 8 10 12 14 16 18 20 STPS10H100CT/CG/CR/CFP PACKAGE MECHANICAL DATA D2PAK DIMENSIONS REF. A Millimeters Min. E C2 L2 D L L3 A1 B2 R C B G A2 M * V2 * FLAT ZONE NO LESS THAN 2mm A A1 A2 B B2 C C2 D E G L L2 L3 M R V2 Max. 4.40 4.60 2.49 2.69 0.03 0.23 0.70 0.93 1.14 1.70 0.45 0.60 1.23 1.36 8.95 9.35 10.00 10.40 4.88 5.28 15.00 15.85 1.27 1.40 1.40 1.75 2.40 3.20 0.40 typ. 0 8 Inches Min. Max. 0.173 0.181 0.098 0.106 0.001 0.009 0.027 0.037 0.045 0.067 0.017 0.024 0.048 0.054 0.352 0.368 0.393 0.409 0.192 0.208 0.590 0.624 0.050 0.055 0.055 0.069 0.094 0.126 0.016 typ. 0 8 FOOT PRINT in millimeters 16.90 10.30 5.08 1.30 3.70 8.90 5/7 STPS10H100CT/CG/CR/CFP PACKAGE MECHANICAL DATA I2PAK DIMENSIONS REF. A E c2 L2 D L1 A1 b2 L b1 b c e Millimeters Inches Min. Max. Min. Max. A 4.40 4.60 0.173 0.181 A1 2.49 2.69 0.098 0.106 b 0.70 0.93 0.028 0.037 b1 1.14 1.17 0.044 0.046 b2 1.14 1.17 0.044 0.046 c 0.45 0.60 0.018 0.024 c2 1.23 1.36 0.048 0.054 D 8.95 9.35 0.352 0.368 e 2.40 2.70 0.094 0.106 E 10.0 10.4 0.394 0.409 L 13.1 13.6 0.516 0.535 L1 3.48 3.78 0.137 0.149 L2 1.27 1.40 0.050 0.055 PACKAGE MECHANICAL DATA TO-220FPAB REF. A B H Dia L6 L2 L7 L3 L5 D F1 L4 F2 F G1 G 6/7 E A B D E F F1 F2 G G1 H L2 L3 L4 L5 L6 L7 Dia. DIMENSIONS Millimeters Inches Min. Max. 4.4 4.6 2.5 2.7 2.5 2.75 0.45 0.70 0.75 1 1.15 1.70 1.15 1.70 4.95 5.20 2.4 2.7 10 10.4 16 Typ. 28.6 30.6 9.8 10.6 2.9 3.6 15.9 16.4 9.00 9.30 3.00 3.20 Min. Max. 0.173 0.181 0.098 0.106 0.098 0.108 0.018 0.027 0.030 0.039 0.045 0.067 0.045 0.067 0.195 0.205 0.094 0.106 0.393 0.409 0.63 Typ. 1.126 1.205 0.386 0.417 0.114 0.142 0.626 0.646 0.354 0.366 0.118 0.126 STPS10H100CT/CG/CR/CFP PACKAGE MECHANICAL DATA TO-220AB REF. A H2 Dia C L5 L7 L6 L2 F2 F1 D L9 L4 F M G1 E G A C D E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 M Diam. DIMENSIONS Millimeters Inches Min. Max. Min. Max. 4.40 4.60 0.173 0.181 1.23 1.32 0.048 0.051 2.40 2.72 0.094 0.107 0.49 0.70 0.019 0.027 0.61 0.88 0.024 0.034 1.14 1.70 0.044 0.066 1.14 1.70 0.044 0.066 4.95 5.15 0.194 0.202 2.40 2.70 0.094 0.106 10 10.40 0.393 0.409 16.4 typ. 0.645 typ. 13 14 0.511 0.551 2.65 2.95 0.104 0.116 15.25 15.75 0.600 0.620 6.20 6.60 0.244 0.259 3.50 3.93 0.137 0.154 2.6 typ. 0.102 typ. 3.75 3.85 0.147 0.151 Cooling method: C. Recommended torque value: 0.55 m.N Maximum torque value 0.70 m.N Ordering type Marking Package Weight Base qty Delivery mode STPS10H100CT STPS10H100CFP STPS10H100CG STPS10H100CG-TR STPS10H100CR STPS10H100CT STPS10H100CFP STPS10H100CG STPS10H100CG STPS10H100CR TO-220AB TO-220FPAB D2PAK D2PAK I2PAK 2.20g 2.0 g 1.48g 1.48g 1.49g 50 50 50 1000 50 Tube Tube Tube Tape and reel Tube Epoxy meets UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. 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