TSA884
PNP Silicon Planar High Voltage Transistor
1/4 Version: D08
SOT-23
PRODUCT SUMMARY
BVCBO
-500V
BVCEO
-500V
IC
-150mA
VCE(SAT)
-0.5V @ IC / IB = -50mA / -10mA
Features
● Low Saturation Voltages
● Excellent gain characteristics specified up to -50mA
Structure
● Epitaxial Planar Type
● PNP Silicon Transistor
Part No.
Package
Packing
TSA884CX RF
SOT-23
3Kpcs / 7” Reel
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter
Symbol
Limit
Unit
Collector-Base Voltage
VCBO
-500
V
Collector-Emitter Voltage
VCEO
-500
V
Emitter-Base Voltage
VEBO
-5
V
DC
-150
Collector Current
Pulse
IC
-500
mA
Total Power Dissipation
PTOT
0.3
W
Operating Junction Temperature
TJ
+150
oC
Operating Junction and Storage Temperature Range
TSTG
- 55 to +150
oC
Electrical Specifications (Ta = 25oC unless otherwise noted)
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Collector-Base Breakdown Voltage
IC = -100uA, IE = 0
BVCBO
-500
--
--
V
Collector-Emitter Breakdown Voltage
IC = -10mA, IB = 0
BVCEO
-500
--
--
V
Emitter-Base Breakdown Voltage
IE = -100uA, IC = 0
BVEBO
-5
--
--
V
Collector Cutoff Current
VCB = 120V, IE = 0
ICBO
--
--
-100
nA
Emitter Cutoff Current
VEB = 6V, IC = 0
IEBO
--
--
-100
nA
IC = -20mA, IB = -2mA
VCE(SAT) 1
--
--
-0.2
Collector-Emitter Saturation Voltage
IC = -50mA, IB = -10mA
VCE(SAT) 2
--
-0.5
V
Base-Emitter Saturation Voltage
IC = -50mA, IB = -10mA
VBE(SAT)
--
--
-0.9
V
Base-Emitter on Voltage
VCE = -10V, IC = -50mA
VBE(ON)
--
--
-0.9
V
VCE = -10V, IC = -1mA
hFE 1
150
--
300
VCE = -10V, IC = -50mA
hFE 2
80
--
300
DC Current Transfer Ratio
VCE = -10V, IC = -100mA
hFE 3
--
15
--
Transition Frequency
VCE =10V, IC=-100mA
fT
--
50
--
MHz
Output Capacitance
VCB = 20V, f=1MHz
Cob
--
--
8
pF
Turn On Time
Ton
--
110
--
nS
Turn Off Time
VCE = -100V, IC = -50mA
IB1=-5mA, IB2=-10mA
Toff
--
1500
--
nS
Pin Definition:
1. Base
2. Emitter
3. Collector
TSA884
PNP Silicon Planar High Voltage Transistor
2/4 Version: D08
Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted)
Figure 1. Static Characteristics
Figure 2. DC Current Gain
Figure 3. VCE(SAT) v.s. VBE(SAT
Figure 4. Power Derating
TSA884
PNP Silicon Planar High Voltage Transistor
3/4 Version: D08
SOT-23 Mechanical Drawing
Marking Diagram
A8
= Device Code
Y
= Year Code
M
= Month Code
(A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug,
I=Sep, J=Oct, K=Nov, L=Dec)
L
= Lot Code
SOT-23 DIMENSION
MILLIMETERS
INCHES
DIM
MIN
MAX
MIN
MAX.
A
0.95 BSC
0.037 BSC
A1
1.9 BSC
0.074 BSC
B
2.60
3.00
0.102
0.118
C
1.40
1.70
0.055
0.067
D
2.80
3.10
0.110
0.122
E
1.00
1.30
0.039
0.051
F
0.00
0.10
0.000
0.004
G
0.35
0.50
0.014
0.020
H
0.10
0.20
0.004
0.008
I
0.30
0.60
0.012
0.024
J
5º
10º
5º
10º
TSA884
PNP Silicon Planar High Voltage Transistor
4/4 Version: D08
Notice
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assumes no responsibility or liability for any errors or inaccuracies.
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