BZA856AVL - NXP - Datasheet.Live

DATA SH EET

Product data sheet

Supersedes data of 2003 Apr 01 2003 Oct 20

DISCRETE SEMICONDUCTORS

BZA800AVL series

Quadruple low capacitance ESD

suppressor

ook, halfpage

MBD127

2003 Oct 20 2

NXP Semiconductors Product data sheet

Quadruple low capacitance ESD

suppressor BZA800AVL series

FEATURES

•Low diode capacitance

•Low leakage current

•SOT353 (SC-88A) surface mount package

•Common anode configuration.

APPLICATIONS

•Communication syste ms

•Computers and pe ripherals

•Audio and video equipment.

DESCRIPTION

Monolithic transient voltage suppressor diode in a five lead

SOT353 (SC-88A) package for 4-bit wide ESD tran sie nt

suppression.

MARKING

PINNING

TYPE NUMBER MARKING CODE

BZA856AVL R3

BZA862AVL R2

BZA868AVL R1

PIN DESCRIPTION

1cathode 1

2common anode

3cathode 2

4cathode 3

5cathode 4

handbook, halfpage

MGT580

Fig.1 Simplified outline (SOT353; SC-8 8A) and

symbol.

ORDERING INFORMATION

TYPE NUMBER PACKAGE

NAME DESCRIPTION VERSION

BZA856AVL −plastic surface mounted package; 5 leads SOT353

BZA862AVL −plastic surface mounted package; 5 leads SOT353

BZA868AVL −plastic surface mounted package; 5 leads SOT353

2003 Oct 20 3

NXP Semiconductors Pr oduct data sheet

Quadruple low capacitance ESD

suppressor BZA800AVL series

LIMITING VALUES

In accordance with the A bsolute Maxim u m Rating System (IEC 60134).

Notes

1. DC working current limite d by Ptot(max).

2. Device mounted o n standard printed-ci rc uit board.

ESD STANDARDS COMPLIANCE

THERMAL CHARACTE RISTICS

Note

1. Solder point o f common anode (pin 2).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

Per diode

IZworking curr en t Tamb = 25 °C−note 1 mA

IFcontinuous forward current Tamb = 25 °C−200 mA

IFSM non-repetitive peak forward current tp = 1 ms; square pulse −3.5 A

Ptot total power dissipation Tamb = 25 °C; note 2; see Fig.5 −300 mW

PZSM non repetitive peak reverse power

dissipation square pulse; tp = 1 ms −6 W

Tstg storage temperature −65 +150 °C

Tjjunction temperature −150 °C

ESD electrostatic discharge IEC 61000-4-2 (contact discharge) 15 −kV

HBM MIL-Std 883 10 −kV

STANDARD CONDITIONS

IEC 61000-4-2, level 4 (ESD) >15 kV (air); >8 kV (contact discharge)

HBM MIL-Std 883, class 3 >4 kV

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth j-a thermal resistance from juncti on to

ambient all diodes loaded 410 K/W

Rth j-s thermal resistance from juncti on to

solder point; note 1 one diode loaded 200 K/W

all diodes loaded 185 K/W

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NXP Semiconductors Pr oduct data sheet

Quadruple low capacitance ESD

suppressor BZA800AVL series

ELECTRICAL CHARACTERISTIC S

Tj = 25 °C unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

VFforward voltage IF = 200 mA − − 1.2 V

IRreverse current

BZA856AVL VR = 3 V − − 200 nA

BZA862AVL VR = 4 V − − 100 nA

BZA868AVL VR = 4.3 V − − 20 nA

VZworking voltage IZ = 1 mA

BZA856AVL 5.32 5.6 5.88 V

BZA862AVL 5.89 6.2 6.51 V

BZA868AVL 6.46 6.8 7.14 V

rdif differential resistance IZ = 1 mA

BZA856AVL − − 200 Ω

BZA862AVL − − 150 Ω

BZA868AVL − − 100 Ω

SZtemperatur e coe fficient IZ = 1 mA

BZA856AVL −1.3 −mV/K

BZA862AVL −2.4 −mV/K

BZA868AVL −2.9 −mV/K

Cddiode capacitance f = 1 MHz; VR = 0

BZA856AVL −22 28 pF

BZA862AVL −18 22 pF

BZA868AVL −16 19 pF

diode capacitance f = 1 MHz; VR = 5 V

BZA856AVL −12 17 pF

BZA862AVL −912 pF

BZA868AVL −811 pF

IZSM non-repetitive peak reverse current tp = 1 ms; Tamb = 25 °C

BZA856AVL − − 0.90 A

BZA862AVL − − 0.85 A

BZA868AVL − − 0.80 A

2003 Oct 20 5

NXP Semiconductors Pr oduct data sheet

Quadruple low capacitance ESD

suppressor BZA800AVL series

handbook, halfpage

10−1

MLD997

10−210−11tp (ms)

IZSM

(A)

BZA856AVL

BZA862AVL/BZA868AVL

Fig.2 Maximum non-repetitive pea k re verse

current as a func tion of pulse time.

handbook, halfpage

102MLD999

10−210−11tp (ms)

PZSM

(W)

BZA862AVL

BZA856AVL

BZA868AVL

Fig.3 Maximum non-repetitive pea k re verse

power dissipation as a func tion of pulse

duration (squ are pulse).

handbook, halfpage

1234

VR (V)

(pF)

MLD998

BZA862AVL

BZA868AVL

BZA856AVL

Fig.4 Diode capacitance as a function of reverse

voltage; typical values.

Tj = 25 °C; f = 1 MHz.

handbook, halfpage

050 Tamb (°C)

Ptot

(mW)

100 150

400

300

100

200

MLD793

Fig.5 Power derating curve.

2003 Oct 20 6

NXP Semiconductors Pr oduct data sheet

Quadruple low capacitance ESD

suppressor BZA800AVL series

handbook, full pagewidth

MLE004

450 Ω

50 Ω

Note 1: attenuator is only used for open

socket high voltage measurements

IEC 1000-4-2 network

CZ = 150 pF; RZ = 330 Ω

1/4 BZA800AVL

RG 223/U

50 Ω coax

ESD TESTER DIGITIZING

OSCILLOSCOPE

10×

ATTENUATOR

note 1

GND GND1

GND2

GND3

GND

unclamped +1 kV ESD voltage waveform

(IEC 1000-4-2 network) clamped +1 kV ESD voltage waveform

(IEC 1000-4-2 network)

unclamped −1 kV ESD voltage waveform

(IEC 1000-4-2 network) clamped −1 kV ESD voltage waveform

(IEC 1000-4-2 network)

vertical scale = 5 V/div

horizontal scale = 50 ns/div

BZA868AVL

BZA862AVL

BZA856AVL

vertical scale = 200 V/div

horizontal scale = 50 ns/div

vertical scale = 200 V/div

horizontal scale = 50 ns/div vertical scale = 5 V/div

horizontal scale = 50 ns/div

Fig.6 ESD clamping test set-up an d waveforms.

2003 Oct 20 7

NXP Semiconductors Pr oduct data sheet

Quadruple low capacitance ESD

suppressor BZA800AVL series

APPLICATION INFORMATION

Typical common anode application

A quadruple transient suppressor in a SOT353 package makes it possible to protect four separate lines using only one

package. Two simplified ex amples are shown in Figs.7 and 8.

handbook, full pagewidth

GND

keyboard,

terminal,

printer,

etc. I/O

BZA800AVL

FUNCTIONAL

DECODER

MLE006

Fig.7 Computer interface protec tion.

handbook, full pagewidth

MLE007

I/O

ROM

RAM

CPU

CLOCK

GND

VDD

VGG

data bus

control bus

address bus

BZA800AVL

Fig.8 Microprocessor protection.

2003 Oct 20 8

NXP Semiconductors Pr oduct data sheet

Quadruple low capacitance ESD

suppressor BZA800AVL series

Device placement and printed-circuit board layout

Circuit board layout is of extreme importance in th e

suppression of trans i ents. The clamping voltage of the

BZA800AVL is determined by the peak transient current

and the rate of rise of that curr ent (di/dt). Since parasitic

inductances can furth er add to the clamping voltage

(V = L di/dt) the series cond uctor lengths on the

printed-circuit board should be kept to a minimum. This

includes the lead length of the suppression eleme nt.

In addition to minimizing conductor length the following

printed-circuit board layout guidelines are recommended:

1. Place the suppress ion element close to the input

terminals or connectors

2. Keep parallel signal paths to a minimum

3. Avoid running prote ction conductors in parallel with

unprotected conductors

4. Minimize all printed-circuit board loop areas including

power and ground loops

5. Minimize the length of the transient return path to

ground

6. Avoid using shared transient return paths to a common

ground point.

2003 Oct 20 9

NXP Semiconductors Pr oduct data sheet

Quadruple low capacitance ESD

suppressor BZA800AVL series

PACKAGE OUTLINE

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC EIAJ

SOT353

detail X

0 1 2 mm

scale

132

Plastic surface mounted package; 5 leads SOT353

UNIT A1

max bpcD

(2)

HELpQywv

mm 0.1 0.30

0.20 2.2

1.8

0.25

0.10 1.35

1.15 0.65

1.3 2.2

2.0 0.2 0.10.2

DIMENSIONS (mm are the original dimensions)

0.45

0.15 0.25

0.15

1.1

0.8

97-02-28SC-88A

2003 Oct 20 10

NXP Semiconductors Pr oduct data sheet

Quadruple low capacitance ESD

suppressor BZA800AVL series

DATA SHEET STATUS

Notes

1. Please consult the most recently issued document before initiating or co mpleting a design.

2. The product s ta tus of device(s) de scribed in this document may have changed since this document was published

and may differ in case of multiple devices. The latest product status information is available on the Internet at

URL http://www.nxp.com.

DOCUMENT

STATUS(1) PRODUCT

STATUS(2) DEFINITION

Objective data sheet Development This document contains data from the objective specification for pro duct

development.

Preliminary data sheet Qualification This document contains data from the preliminary specification.

Product data sheet Production T his document contains the product s pecification.

DISCLAIMERS

General ⎯ Information in this document is believed to be

accurate and reliable . H ow ev er, NXP Semiconductors

does not give any representations or warranties,

expressed or implied, as to the accuracy or completeness

of such information and shall have no liability for the

consequenc es of use of such informatio n.

Right to make changes ⎯ NXP Semiconductors

reserves the right to make changes to information

published in this doc ument, including without limitation

specifications and product descriptions, at any time and

without notice. This document supersedes and replaces all

information supplied prior to the publication hereof.

Suitability for use ⎯ NXP Semiconductors products are

not designed, au thorized or warranted to be suitable for

use in medical, military, aircraft, space or life support

equipment, nor in applications where failure or malfunction

of an NXP Semiconductors product can reason ably be

expected to result in pe rs onal injury, death or severe

property or environmental damage. NXP Semiconductors

accepts no liability for inclusion and/or use of NXP

Semiconductors products in such equipment or

applications and therefor e s uc h inclusion and/or use is at

the customer’s own risk .

Applications ⎯ Applications that are described herein for

any of these products are for illustrative purposes only.

NXP Semiconductors makes no representation or

warranty that such applications will be suitable for the

specified use witho ut fu rth e r testing or modification.

Limiting values ⎯ Stress abov e on e or more limit ing

values (as defined in the Absolute Maximum Ratings

System of IEC 60134) may cause permanent damage to

the device. Limiting values a re s t ress ratings only and

operation of the device at these or an y other conditions

above those given in the Characteristics sections of this

document is not implied. Exposure to limiting values for

extended periods may affect device reliability.

Terms and conditions of sale ⎯ NXP Semiconductors

products are sold subject to the general terms and

conditions of commercial sale, as published at

http://www.nxp.com/profile/terms, including those

pertaining to warranty, intellectual property rights

infringement and limitation of liability, unless explicitly

otherwise agreed to in writing by NXP Semiconductors. In

case of any incons istency or conflict betwee n information

in this document an d such terms and conditio ns, the latter

will prevail.

No offer to sell or license ⎯ Nothing in this document

may be interpreted or construed as an offer to sell products

that is open for accept ance or the grant, conv eyance or

implication of any license under any copyrights, patents or

other industr i al or inte llectual property rights.

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described herein may be subject to export control

regulations. Export might require a prior authorization from

national author ities.

Quick refer ence data ⎯ The Quick reference data is an

extract of th e product data given in the Limiting values and

Characteristics sections of this document, an d as such is

not complete, exhaus tive or legally binding.

NXP Semiconductors

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The information pr e sent ed in this document does not form part of any q uot ation or co nt ra ct, is believed to be accurate a nd re li a ble and may be change d

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Customer notification

This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were

made to the content, except for the legal definitions and disclaimers.

Printed in The Netherlands R76/02/pp11 Date of release: 2003 Oct 20 Document order numbe r: 9397 750 11934