Philips Semiconductors TOPFET high side switch SMD version of BUK203-50Y DESCRIPTION Monolithic temperature and overload protected power switch based on MOSFET technology in a 5 pin plastic surface mount envelope, configured as a single high side switch. APPLICATIONS General controller for driving Product specification ee eee ee eee eee ee BUK207-50Y For maintenance only. Do not use for design-in. QUICK REFERENCE DATA SYMBOL | PARAMETER MIN. UNIT I Nominal load current (ISO) 1.6 A SYMBOL | PARAMETER MAX. | UNIT Vee Continuous off-state supply voitage 50 v I Continuous load current 4 A T, Continuous junction temperature 150 C Ron On-state resistance 220 mQ lamps, motors, solenoids, heaters. FEATURES Vertical power DMOS switch Low on-state resistance 5 V logic compatible input Overtemperature protection - self resets with hysteresis * Overload protection against short circuit load with output current limiting; latched - reset by input High supply voltage load protection Supply undervoitage lock out * Status indication for overload protection activated Diagnostic status indication of open circuit load * Very low quiescent current e Voltage clamping for turn off of inductive loads ESD protection on ail pins Reverse battery and overvoltage protection FUNCTIONAL BLOCK DIAGRAM GROUND Be i 1 . BATT STATUS *K a | ee * K POWER INPUT J <7) MOSFET 3 CONTROL & : * 7 T | | PROTECTION [= oop K CIRCUITS x * ~ ns - + LOAD ? Fig.1. Elements of the TOPFET HSS with internal ground resistor. PINNING - SOT426 PIN CONFIGURATION SYMBOL PIN DESCRIPTION 1 |Ground _ | 2 [Input | ' 5 ; | TOPFET LL 3. |(connected to mb) HSS is G 4 {Status on | 5 |Load | Fig. 3. mb | Battery July 1996 623 Rev 1.000Philips Semiconductors Product specification TOPFET high side switch BUK207-50Y SMD version of BUK203-50Y LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL |PARAMETER CONDITIONS MIN. MAX. UNIT Battery voltages Vac Continuous off-state supply voltage - 0 50 Vv Reverse battery voltages External resistors: -Veq Repetitive peak supply voltage R, = Re 2 4.7 kQ, 6 < 0.1 - 32 Vv -Vac Continuous reverse supply voltage R, = Reg 2 4.7 kQ - 16 Vv I Continuous load current Tip 110 C - 4 A Pp Total power dissipation Trap S25 C - 50 Ww T stg Storage temperature - -55 175 Cc T, Continuous junction temperature - - 150 C Toole Lead temperature during soldering - 250 C Input and status I, Continuous input current ~ 5 5 mA Ig Continuous status current - 5 5 mA I, Repetitive peak input current 6<041 -20 20 mA Is Repetitive peak status current 5<0.1 -20 20 mA Inductive load clamping Ee. Non-repetitive clamping energy Tp = 150 C prior to turn-off - 1.4 J ESD LIMITING VALUE SYMBOL | PARAMETER CONDITIONS MIN. MAX. UNIT Ve Electrostatic discharge capacitor Human body model; - 2 kV voltage C = 250 pF; R= 1.5kQ2 THERMAL CHARACTERISTIC SYMBOL |PARAMETER CONDITIONS MIN. | TYP. | MAX. | UNIT Thermal resistance Rin jamb Junction to mounting base - - 2 2.5 KAW 1 Reverse battery voltage is allowed only with external input and status resistors to limit the currents to a safe value. 2 For normal continuous operation. A higher T; is allowed as an overload condition but at the threshold T\;, the over temperature trip operates to protect the switch. 3 Of the output Power MOS transistor. July 1996 624 Rev 1.000Philips Semiconductors Product specification TOPFET high side switch BUK207-50Y SMD version of BUK203-50Y STATIC CHARACTERISTICS Tn = 25 C unless otherwise stated SYMBOL |PARAMETER CONDITIONS MIN. | TYP. | MAX. | UNIT Clamping voltages Veo Battery to ground lg=1mA 50 55 65 Vv Vet Battery to load L=lz=1mA 50 55 65 Vv Vig Negative load to ground L=1mA 12 17 21 Vv Supply voltage battery to ground Vac Operating range - 5 - 40 V Currents Veg =13V I Nominal load current Ve. = 0.5 V: Tay = 85 C 1.6 - - A ls Quiescent current Vig 2 OVIVig=0V - 0.1 2 LA le Operating current* Vie= 5 ViIL=0A 1.5 2.2 4 mA I Off-state load current Ve. = 13-V; Vig = OV - 0.1 1 pA Resistances Ron On-state resistance Veg = 13. Vi 1, = 2 A; t, = 300 ps - 160 220 moa Ron On-state resistance Veg = 5 V; 1, = 0.5 A; t, = 300 us - 225 320 mQ Re internal ground resistance Iz = 10 mA - 150 - Q INPUT CHARACTERISTICS Tiny = 25 C: Vag = 13 V SYMBOL |PARAMETER CONDITIONS MIN. | TYP. | MAX. | UNIT |, Input current Vig = 5V 35 60 100 BA Vie Input clamping voltage 1, = 200 pA 6 7.5 3.5 Vv Vicon) Input turn-on threshold voltage - 2.1 2.7 Vv Viciorrs Input turn-off threshold voltage 1.5 2 - Vv 1 On-state resistance is increased if the supply voltage is less than 9 V. Refer to figure 8. 2 Defined as in ISO 10483-1. 3 This is the continuous current drawn fram the battery when the input is ow and includes leakage current to the load. 4 This is the continuous currant drawn from the battery with no foad connected, but with the input high. 5 The measured current is in the load pin only. & The supply and input voltage for the Roy tests are continuous. The specified pulse duration t, refers only to the applied load current. July 1996 625 Rev 1.000Philips Semiconductors Product specification TOPFET high side switch BUK207-50Y SMD version of BUK203-50Y PROTECTION FUNCTIONS AND STATUS INDICATIONS Truth table for normal, open-circuit load and overload conditions and abnormal supply voltages. FUNCTIONS TRUTH TABLE THRESHOLD SYMBOL |CONDITION input | status | ouTPUT | MIN. | TYP. | MAX. | UNIT | Normal on-state 1 1 1 ee bs | Normal off-state 1) 1 0 bo ek hoo) Open circuit load 1 0 1 30 90 150 | mA Open circuit load 0 1 0 S 2 : : A a Tito) Over temperature 1 0 0 150 | 175 - c Over temperature? 0 0 0 ae So : S Veutto) Short circuit load* 1 0 0 9 10.5 |. 12 V | Short circuit load 0 1 0 Le Veaito) Low supply voltage X 1 0 3 4 5 Vaaur) High supply voltage x 1 0 40 45 50 For input 0 equals low, 1 equats high, X equals dont care. For status 0 equals low, 1 equals open or high. For output switch 0 equals off, 1 equals on. STATUS CHARACTERISTICS Tab = 25 C. The status output is an open drain transistor, and requires an external pull-up circuit to indicate a logic high. SYMBOL |PARAMETER CONDITIONS MIN. | TYP. | MAX. | UNIT Vee Status clamping voltage I, = 100 pA; Vig OV 6 7 8 Vv Vsq Status low voitage 5 = 50 pA; Veg = 138 Vi Vig = 5 V - 0.7 0.8 Vv Is Status leakage current Veg = 5 V - 0.1 1 pA Is Status saturation current Vsg = 5 V; Rg = 0.0; Veg = 13 V - 5 - mA Application information Rs External pull-up resistor Veg = 5 V - 100 - kQ 1 In the on-state, the switch detects whether the load current is less than the quoted open foad threshold current. This is for status indication only. Typical hysteresis equals 25 mA. The thresholds are specified for supply voltage within the normal working range. 2 After cooling below the reset temperature the switch will resume normai operation. The reset temperature is lower than the trip temperature by typically 10 C. 3 If the overtemperature protection has operated, status remains low to indicate the overtemperature condition even if the input is taken low, providing the device has not cooled below the reset temperature. 4 After short circuit protection has operated, the input voltage must be toggled low for the switch to resume normal operation. 5 Undervoitage sensor causes the device to switch off. Typical hysteresis equals 0.7 V. 6 Overvoltage sensor causes the device to switch off to protect the load. Typical hysteresis equals 1.3 V. 7 In a fault condition with the pull-up resistor short circuited while the status transistor is conducting. 8 The pull-up resistor also protects the status pin during reverse battery conditions. July 1996 626 Rev 1.000Philips Semiconductors Product specification TOPFET high side switch BUK207-50Y SMD version of BUK203-50Y DYNAMIC CHARACTERISTICS Tb = 25 C3 Veg = 13 V SYMBOL |PARAMETER CONDITIONS MIN. | TYP. | MAX. | UNIT Inductive load turn-off Vig Negative load voltage Vig=OV31=2A4;t, = 300 ps 15 20 25 Vv Short circuit load protection |V,, = 5 V; R, < 10 mQ te sc Response time - 75 - us I Load current prior to turn-off t < ty se - 17 - A Overload protection Iti) Load current limiting Ve. = 9 V; tp = 300 ps 12 15 22 A SWITCHING CHARACTERISTICS Tinb = 25 C, Vag = 13 V, for resistive load R, = 13 Q. SYMBOL |PARAMETER CONDITIONS MIN. | TYP. | MAX. | UNIT During turn-on to Vig=5V leon Delay time to 10% V, - 16 - us dV/dt,,, Rate of rise of load voltage 1.3 3 Vius ton Total switching time to 90% V, - 40 - us During turn-off toVig=O0V ta ott Delay time to 90% V_ - 20 - ps AV /dtoq Rate of fall of load voltage - 1.6 3 V/us tot Total switching time to 10% V, - 35 - js CAPACITANCES Tp = 25 C: f = 1 MHz; Vig= OV SYMBOL |PARAMETER CONDITIONS MIN. | TYP. | MAX. | UNIT Cg Input capacitance Veg = 13 V - 15 20 pF Cy, Output capacitance Ver = Veg = 13 V - 120 170 pF Co, Status capacitance Veg =5V 11 15 pF 1 For a high side switch, the load pin voltage goes negative with respect to ground during the turn-off of an inductive load. This negative voltage is clamped by the device. 2 The toad current is self-limited during the response time for short circuit load protection. Response time is measured from when input goes high. 3 If the ioad resistance is low, but not a complete short circuit, such that the on-state voltage remains less than Va 7o, the device remains in current limiting until the overtemperature protection operates. July 1996 627 Rev 1.000Philips Semiconductors Product specification TOPFET high side switch BUK207-50Y SMD version of BUK203-50Y 10 Is A BUK207-50Y rng VBL 9 | | et 8 ves | ae Torre Le 6 QO helt hg ap P Oig | JETT: Por lO Ly : 0 0.5 1 1.5 2 VBL/V Fig.4. High side switch measurements schematic. (current and voliage conventions) Fig.7. Typical on-state characteristics, T, = 25 C. I, = HV); parameter Vac; t, = 250 us Normalised Power 12Q 410 100 90 80 70 60 50 40 30 20 10 G a 20 40 60 80, 700 126 146 Tbs Fig.5. Normalised limiting power dissipation. P 5% = 100-P)/P_(25 C) = fT nw) 400 RON / Ohm BUK207-50Y 300 200 100 a 1 10 100 VBG/V Fig.8. Typical on-state resistance, T; = 25 C. ow = f(Vgq); conditions: |, = 2 A; t, = 300 ps 8 IL/A BUK207-50 oO 20 40 60 80 100 120 140 Tmb/c Fig.6. Limiting continuous on-state load current. \, = f(T); conditions: Vig = 5 V, Vag = 13 V RON / Ohm BUK207-50Y 0.5 ' r a VBG = : ! " cz H 13V os ea Ac : | ee] 0.2 | a, La i Lael Le 04 T | o fe Ee |) -60 -20 20 60 100 140 180 Tic Fig.9. Typical on-state resistance, t, = 300 ps. Ron = f(T); parameter Vzq; condition 1, = 0.5 A July 1996 Rev 1.000Philips Semiconductors TOPFET high side switch SMD version of BUK203-50Y Product specification BUK207-50Y 5 iG/mA BUK207-50Y CLAMPING OPERATING VIG=3V HIGH VOLTAGE QUIESCENT ViIG=0V 0 10 20 30 40 50 60 VBG /V Fig.10. Typical supply characteristics, 25 C. lg = (Vag); parameter Vig 100 uA IL BUK207-50Y 10 vA 1uA 100 nA 10 nA 1nA 60 -20 20 60 100 140 180 Tic Fig.13. Typical off-state leakage current. i, = f(T); conditions; Vg, = 13 V = Vag) Vig = 0 V. IG/mA BUK207-50Y -60 -20 20 60 100 140 180 Tic Fig.11. Typical operating supply current. I, = {(T); parameter Vag; condition Vig =5 V 200 ILA uA BUK207-50Y 160 100 50 0 Qo 2 4 6 8 VIGIV Fig.14. Typical input characteristics, T; = 25 C. I, = (Vic); parameter Vac BUK207-50Y 100 uA 8 207 30 10 uA 100 nA 10 nA 60 20 20 6G 100 140 180 Tc Fig.12. Typical supply quiescent current. I, = f(T); condition Vag = 13 V, Vig =O V, Vig= OV too LUA BUK207-50 80 60 40 20 9 Q 10 20 30 40 50 VBG/V Fig.15. Typical input current, T, = 25 C. l= f(Vgq); condition Vig = 5 V July 1996 Rev 1.000Philips Semiconductors Product specification TOPFET high side switch BUK207-50Y SMD version of BUK203-50Y 0 VIG/V BUK207-50Y 10 uA is BUK207-50Y 1uA VIG(OFF) 100 nA 10nA -60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180 Tic tie Fig.16. Typical input threshold voltages. Vig = MT); conditions Vag = 13 V, |, = 100 mA Fig.19. Typical status leakage current. I, = (TJ; conditions Veg = 5 V, Vig = Veg = OV VIGIV BUK207-50Y -60 20 20 60 100 140 180 Tic Fig.17. Typical input clamping voltage. Vig =1(T,); conditions |, = 200 WA, Vag = 13 V 500 Tua BUK207-50Y 400 A / 300 7 200 7 400 0 i 0 C2 04 O06 O88 1 1.2 14 #16 1.8 2 VSGIV Fig.20. Typical status low characteristic, T, = 25 C. I, = f(Vog); conditions Vig = 8 V, Vag = 13 Vv, L=O0A IS /mA BUK207-50Y Q 2 4 6 8 10 VSG/V Fig.18. Typical status characteristic, T, = 25 C. Is = (Vg); conditions Vig = Vag = OV VSG/V BUK207-50Y 0.8 0.6 0.4 0.2 0 -60 ~20 20 50 100 140 180 We Fig.21. Typical status low voltage, Vsg = f(T). conditions |, = 50 pA, Vig=5V, Veg = 13 V,1=0A July 1996 630 Rev 1.000Philips Semiconductors Product specification TOPFET high side switch BUK207-50Y SMD version of BUK203-50Y 0 VSGIV BUK207-50Y 47 iV BUK207-50Y 75 7.0 6.5 -60 -20 20 60 400 140 180 -60 -20 20 60 100 140 480 Tic we Fig.22. Typical status clamping voltage, Vso = = {(T)). We 25. Su upply typical overvoltage thresholds. parameter V,,; conditions |, = 100 LA, Vag = 13 V Vecur) = f(T); conditions Vig = 5 V; |, = 100 mA BUK207-50Y VBG iV BUK207-50Y 200 65 60 106 55 0 50 -60 -20 20 60 100 140 180 ~60 -20 20 60 100 140 180 Tic T/C Fig. 23. Low load current detection threshold. Fig.26. Typical battery to ground clamping voltage. hoc) = HT); conditions Vig = 5 V; Vag = 13 V Vag = f(T); parameter |, 5 VEG(TO) iV BUK207-50Y 10 IL/A BUK207-50Y P| 9 4 Poem Ttmaee| 8 TS on 7 4 . po 6 a ee off 5 2 4 3 1 2 : i i 1 0 betel \ | i jh 0 -60 -20 20 60 100 140 180 24 -20 16 -12 -8 4 a T"Wic VLG /V Fig.24. Supply typical undervoltage thresholds. Fig.27. Typical negative load clamping characteristic. Vearrey = f(T); conditions Vig = 3 V; I, = 100 mA |, = f(Vig); conditions Vig = 0 V, t, = 300 us, 25 C July 1996 631 Rev 1.000Philips Semiconductors Product specification TOPFET high side switch BUK207-50Y SMD version of BUK203-50Y VLG/V ~5OY iL/A BUK207. 720 +22 -60 -20 20 60 100 140 180 Tic Fig.28. Typical negative load clamping voliage. Vie = f(T); parameter |,; condition Vig = 0 V. TA -0.9 0.7 0.5 -0.3 0.4 VBL /V Fig.31. Typical reverse diode characteristic. I = f(V); conditions Vig =0 V, T, = 25 C VBL/V BUK207-50Y -60 20 20 60 100 140 180 Tic Va, = f(T), parameter |,; condition I, = 5 MA. Fig.29. Typical battery to load clamping voltage. BUK207-50Y 0 10 20 3c 40 50 VBL/V Fig.32. Typical ouput capacitance. Ty, = 25 C C,, = f(Ve,); conditions f = 1 MHz, V, 16> iG/mA 0 BUK207-50Y 0) 15 -10 r o VBG/V Fig.30. Typical reverse battery characteristic. Ig = f(Vaq); conditions |, = 0A, T, = 25 C 20 IL/ A BUK207-50Y current 15 10 ia. before short circuit load trip 5 0 0 4 8 12 16 20 24 28 VBL/V Fig.33. Typical overload characteristic, T,., = 25 C. | = f(Ve,); condition Veg = 13 V; parameter t, July 1996 632 Rev 1.000Philips Semiconductors TOPFET high side switch SMD version of BUK203-50Y Product specification BUK207-50Y i a 20 iA BUK207-50Y Q -60 20 20 60 Tmb fc Fig.34. Typical overload current, Va, = 9 V. = f(T mp)i CONAIIONS Vag = 13 V; t, = 100 us 100 140 180 15 iv BUK207-50Y -60 -20 20 60 Tmb/ Fig.36. Typical short circuit load threshold voltage. sucroy = f(T mp), CONIION Veg = 13 V 100 140 180 BUK207-50Y 0 10 20 30 40 VBG IV Vac rroy = f( Vea); condition T,., = 25 C Fig.35. Typical short circuit load threshold voltage. 10 -ZitLi:mb / (KAW) BUK207-50Y 0.01 +- 1001 lu 100m i 10 iam A LU im ifs Fig.37. Transient thermal impedance. Zn pmo = HY); parameter D = 1/T July 1996 633 Rev 1.000