Advanced Power N-CHANNEL ENHANCEMENT MOD
E
Electronics Corp. POWER MOSFET
▼
▼ ▼
▼ Low On-Resistance BVDSS 25V
▼
▼ ▼
▼ Fast Switching RDS(ON) 8.5mΩ
▼
▼ ▼
▼ Simple Drive Requirement ID13A
Description
Absolute Maximum Ratings
Symbol Units
VDS V
VGS V
ID@TA=25℃A
ID@TA=70℃A
IDM A
PD@TA=25℃W
W/℃
TSTG ℃
TJ℃
Symbol Value Unit
Rthj-amb Thermal Resistance Junction-ambient3Max. 50 ℃/W
Data and specifications subject to change without notice
AP4880GM
Pb Free Plating Product
Parameter Rating
Drain-Source Voltage 25
Gate-Source Voltage
Continuous Drain Current313
Continuous Drain Current310
Pulsed Drain Current150
Total Power Dissipation 2.5
Linear Derating Factor 0.02
Storage Temperature Range -55 to 150
Operating Junction Temperature Range -55 to 150
Thermal Data Parameter
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The SO-8 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters.
G
D
S
± 20
SSSG
DDDD
SO-8
G
D
S
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 25 - - V
ΔBVDSS/ΔTjBreakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.037 -V/℃
RDS(ON) Static Drain-Source On-Resistance2VGS=10V, ID=13A - - 8.5 mΩ
VGS=4.5V, ID=10A - - 15 mΩ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V
gfs Forward Transconductance VDS=15V, ID=10A - 20 - S
IDSS Drain-Source Leakage Current (T
j=25oC) VDS=25V, VGS=0V - - 1 uA
Drain-Source Leakage Current (T
j=70oC) VDS=20V, VGS=0V - - 25 uA
IGSS Gate-Source Leakage VGS=--
nA
QgTotal Gate Charge2ID=13A - 22.5 - nC
Qgs Gate-Source Charge VDS=15V - 3.3 - nC
Qgd Gate-Drain ("Miller") Charge VGS=5V - 15.4 - nC
td(on) Turn-on Delay Time2VDS=15V - 9 - ns
trRise Time ID=1A - 16 - ns
td(off) Turn-off Delay Time RG=6.2Ω,VGS=10V - 25 - ns
tfFall Time RD=15Ω-50-ns
Ciss Input Capacitance VGS=0V - 813 - pF
Coss Output Capacitance VDS=25V - 516 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 224 - pF
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
ISContinuous Source Current ( Body Diode ) VD=VG=0V , VS=1.3V - - 1.92 A
VSD Forward On Voltage2Tj=25℃, IS=2.3A, VGS=0V - - 1.3 V
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board ; 125 ℃/W when mounted on Min. copper pad.
AP4880GM
± 20V ±100
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance
v.s. Junction Temperature
AP4880GM
0.6
0.8
1
1.2
1.4
1.6
1.8
-50 0 50 100 150
Tj , Junction Temperature ( oC)
Normal ized RDS(ON)
VGS=10V
ID=13A
5
7
9
11
13
15
17
19
21
23
234567891011
VGS (V)
RDS(ON) (m
Ω
Ω
Ω
Ω
)
I
D=13A
TC=25
℃
℃℃
℃
0
10
20
30
40
50
0123456
VDS , Drain-to-Source Voltage (V)
ID , Drain Curre nt (A)
TC=25oC
10V
8.0V
6.0V
5.0V
VGS=4.0V
0
10
20
30
40
50
0123456
VDS , Drain-to-Source Voltage (V)
ID , Drain Curre nt (A)
TC=150 oC
10V
8.0V
6.0V
5.0V
VGS=4.0V
AP4880GM
Fig 5. Maximum Drain Current v.s. Fig 6. Typical Power Dissipation
Case Temperature
Fig 7. Maximum Safe Operating Area Fig 8. Effective Transient Thermal Impedance
0
1
2
3
0 50 100 150
Tc , Case Temperature ( oC)
PD (W)
0
3
6
9
12
15
25 50 75 100 125 150
Tc , Case Temperature ( oC)
ID , Drain Curre nt (A)
0.01
0.1
1
10
100
0.1 1 10 100
VDS (V)
ID (A)
TC=25oC
S
in
g
le Pulse
100us
1ms
10ms
100ms
1s
10s
D
C
0.001
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10 100 1000
t , Pulse Width (s)
Normalized Thermal Response (Rthja)
PDM
Duty Factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja=125oC/W
t
T
0.02
0.01
0.05
0.1
0.2
Duty Factor = 0.5
Single Pulse
Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics
Fig 11. Forward Characteristic of Fig 12. Gate Threshold Voltage v.s.
Reverse Diode Junction Temperature
AP4880GM
0
1
2
3
-50 0 50 100 150
Tj , Junction Temperature( oC)
VGS(th) (V)
0.1
1
10
100
0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5
VSD (V)
IS(A)
Tj=25oCTj=150 oC
100
1000
10000
1 6 11 16 21
VDS (V)
C (pF)
f
=1.0MHz
Ciss
CissCiss
Ciss
Coss
CossCoss
Coss
Crss
CrssCrss
Crss
0
2
4
6
8
10
12
14
16
0 5 10 15 20 25 30 35 40 45 50
QG , Total Gate Charge (nC)
VGS , Gate to Source Voltage (V)
ID=13A
VDS =15V
AP4880GM
Fig 13. Switching Time Circuit Fig 14. Switching Time Waveform
Fig 15. Gate Charge Circuit Fig 16. Gate Charge Waveform
td(on) trtd(off) tf
VDS
VGS
10%
90%
Q
VG
5V
QGS QGD
QG
Charge
0.6 x RATED VDS
TO THE
OSCILLOSCOPE
-
+10 V
D
G
S
VDS
VGS
RG
RD
0.6 x RATED VDS
TO THE
OSCILLOSCOPE
-
+
D
G
S
VDS
VGS
ID
IG
1~ 3 m
A
