2N6666, 2N6667, 2N6668
Silicon PNP Transistors
Darlington Power Amplifier
TO−220 Type Package
Description:
The 2N6666, 2N6667, and 2N6668 are silicon PNP Darlington power transistors in a TO−220 type
package designed for general purpose amplifier and low−speed switching applications.
Features:
DDC Current Gain: hFE = 3000 (Typ) @ IC = 4A
DCollector−Emitter Sustaining Voltage:
VCEO(sus) = 40V (Min) − 2N6666
= 60V (Min) − 2N6667
= 80V (Min) − 2N6668
DLow Collector−Emitter Saturation Voltage:
VCE(sat) = 2V Max @ IC = 3A − 2N6666
= 2V Max @ IC = 5A − 2N6667, 2N6668
Absolute Maximum Ratings:
Collector−Emitter Voltage, VCEO
2N6666 40V.....................................................................
2N6667 60V.....................................................................
2N6668 80V.....................................................................
Collector−Base Voltage, VCBO
2N6666 40V.....................................................................
2N6667 60V.....................................................................
2N6668 80V.....................................................................
Emitter−Base Voltage, VEBO 5V..........................................................
Collector Current, IC
Continuous
2N6666 8A...................................................................
2N6667, 2N6668 10A..........................................................
Peak 15A.......................................................................
Base Current, IB250mA................................................................
Total Power Dissipation (TC = +25C), PD65W............................................
Derate Above 25C 0.52W/C......................................................
Operating Junction Temperature Range, TJ−65 to +150C..................................
Storage Temperature Range, Tstg −65 to +150C..........................................
Thermal Resistance, Junction−to−Case, RthJC 1.92C/W....................................
Electrical Characteristics: (TC = +25C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics
Collector−Emitter Sustaining Voltage
2N6666 VCEO(sus) IC = 200mA, IB = 0, Note 1 40 − − V
2N6667 60 − − V
2N6668 80 − − V
Collector Cutoff Current ICEO VCE = Rated VCEO, IB = 0 − − 1.0 mA
ICEX VCE = Rated VCEO,
VEB(off) = 1.5V
− − 0.3 mA
TC = +125C− − 3 mA
Emitter Cutoff Current IEBO VBE = 5V, IC = 0 − − 5 mA
ON Characteristics (Note 1)
DC Current Gain
2N6666 hFE IC = 3A, VCE = 3V 1000 −20000
2N6667, 2N6668 IC = 5A, VCE = 3V 1000 −20000
2N6666 IC = 8A, VCE = 3V 100 − −
2N6667, 2N6668 IC = 10A, VCE = 3V 100 − −
Collector−Emitter Saturation Voltage
2N6666 VCE(sat) IC = 3A, IB = 6mA − − 2 V
2N6667, 2N6668 IC = 5A, IB = 10mA − − 2 V
2N6666 IC = 8A, IB = 80mA − − 3 V
2N6667, 2N6668 IC = 10A, IB = 100mA − − 3 V
Base−Emitter ON Voltage
2N6666 VBE(on) IC = 3A, VCE = 3V − − 2.8 V
2N6667, 2N6668 IC = 5A, VCE = 3V − − 2.8 V
2N6666 IC = 8A, VCE = 3V − − 4.5 V
2N6667, 2N6668 IC = 10A, VCE = 3V − − 4.5 V
Switching Characteristics
Small−Signal Current Gain hfe IC = 1A, VCE = 5V, ftest = 1MHz 1000 − −
Output Capacitance Cob VCB = 10V, IE = 0, f = 1MHz − − 200 pF
Note 1. Pulse Test: Pulse Width = 300s, Duty Cycle 2%.
B
C
E
120 80k
.420 (10.67) Max
.500
(12.7)
Max
.500
(12.7)
Min
.250
(6.35)
Max
.147 (3.75)
Dia Max
.070 (1.78) Max
.100 (2.54)
Base
Collector/Tab
Emitter
.110 (2.79)