PZT2222A NPN SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD 2 of 6
www.unisonic.com.tw QW-R207-001.D
ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified)
PARAMETER SYMBOL RATINGS UNIT
Collector-Base Voltage VCBO 75 V
Collector-Emitter Voltage VCEO 40 V
Emitter-Base Voltage VEBO 6 V
Collector Current IC0.6 A
Total Device Dissipation PC 1 W
Junction Temperature TJ +150 °C
Storage Temperature TSTG -55 ~ +150 °C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty
cycle operations.
THERMAL DATA (TA=25°C, unless otherwise specified)
PARAMETER SYMBOL RATINGS UNIT
Junction to Ambient θJA 125 °C/W
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage BVCBO IC=10μA, IE=0 75 V
Collector-Emitter Breakdown Voltage BVCEO IC=10mA, IB=0 40 V
Emitter-Base Breakdown Voltage BVEBO IE=10μA, IC=0 6 V
Collector Cut-off Current ICEO V
CE=60V, VEB
OFF
=3.0V 10 nA
Collector Cut-Off Current ICBO VCB=60V, IE=0 0.01
μA
VCB=60V,IE=0, TA=150°C 10
Emitter Cut-Off Current IEBO V
EB=3.0V, IC=0 10 nA
Base Cut-Off Current IBL V
CE=60V, VEB
OFF
=3.0V 20 nA
ON CHARACTERISTICS
DC Current Gain hFE
IC=0.1mA, VCE=10V 35
IC=1.0mA, VCE=10V 50
IC=10mA, VCE=10V 75
IC=10mA, VCE=10V, TA=-55°C 35
IC=150mA, VCE=10V (Note) 100
IC=150mA, VCE=1.0V (Note) 50 300
IC=500mA, VCE=10V (Note) 40
Collector-Emitter Saturation Voltage
(Note) VCE(SAT)
IC=150mA, IB=15mA 0.3
V
IC=500mA, IB=50mA 1.0
Base-Emitter Saturation Voltage (Note) VBE(SAT)
IC=150mA, IB=15mA 0.6 1.2
V
IC=500mA, IB=50mA 2.0
SMALL SIGNAL CHARACTERISTICS
Transition Frequency fT I
C=20mA, VCE=20V, f=100MHz 300 MHz
Output Capacitance COBO V
CB=10V, IE=0, f=100kHz 8.0 pF
Input Capacitance CIBO V
EB=0.5V, IC=0, f=100kHz 25 pF
Collector Base Time Constant rB'CC I
C=20mA, VCB=20V, f=31.8MHz 150 pS
Noise Figure NF IC=100μA, VCE=10V, RS=1.0kΩ,
f=1.0kHz 4.0 dB
Real Part of Common-Emitter High
Frequency Input Impedance RE(HJE) IC=20mA, VCB=20V, f=300MHz 60 Ω