TBD62183AFWG,EL - TOSHIBA - Datasheet.Live

TBD62183AFNG/FWG

2016-07-15

TOSHIBA BiCD Integrated Circuit Silicon Monolithic

TBD62183AFNG, TBD62183AFWG

8channel sink type DMOS transistor array

TBD62183A series are DMOS transistor array with 8 circuits. It

has a clamp diode for switching inductive loads built-in in each

output. Please be careful about thermal conditions during use.

Features

• 8 circuits built-in

• High voltage : VOUT = 50 V (MAX)

• High current : IOUT = 50 mA/ch (MAX)

• Input voltage(output on) : 2.8 V (MIN)

• Input voltage(output off) : 0.6 V (MAX)

• Package : FNG type SSOP18-P-225-0.65

FWG type P-SOP18-0812-1.27-001

Pin connection (top view)

Pin connection may be simplified for explanatory purpose.

TBD62183AFNG

SSOP18-P-225-0.65

TBD62183AFWG

P-SOP18-0812-1.27-001

Weigh

SSOP18

-P-225-0.65 : 0.09 g (Typ.)

P-SOP18-0812-1.27-001 : 0.48 g (Typ.)

TBD62183AFNG/FWG

2016-07-15

Pin explanations

Pin No. Pin name Function

Input pin

GND

GND pin

COMMON

Common pin

Output pin

Equivalent circuit

Equivalent circuit may be simplified for explanatory purpose.

Clamp

INPUT

COMMON

OUTPUT

Clamp diode

TBD62183AFNG/FWG

2016-07-15

Absolute Maximum Ratings (Ta = 25 °C)

Characteristics Symbol Rating Unit

Output voltage

VOUT 50 V

COMMON pin voltage

VCOM −0.5 to 50 V

Output current

IOUT 50 mA/ch

Input voltage

VIN −0.5 to 30 V

Clamp diode reverse voltage

VR 50 V

Clamp diode forward current

IF 50 mA

Power

dissipation

FNG (Note1)

0.96

FWG (Note2)

1.31

Operating temperature

Topr −40 to 85 °C

Storage temperature

Tstg −55 to 150 °C

Note1: On PCB (Size: 50 mm × 50 mm × 1.6 mm, Cu area: 40 %, single-side glass epoxy).

When Ta exceeds 25 °C, it is necessary to do the derating with 7.7 mW/°C.

Note2: On PCB (Size: 75 mm × 114 mm × 1.6 mm, Cu area: 20 %, single-side glass epoxy).

When Ta exceeds 25 °C, it is necessary to do the derating with 10.48 mW/°C.

TBD62183AFNG/FWG

2016-07-15

Operating Ranges (Ta = −40 to 85 °C, unless otherwise noted)

Characteristics Symbol

Condition Min Typ. Max Unit

Output voltage

VOUT ― ― ― 50 V

COMMON pin voltage

VCOM ― 0 ― 50 V

Output

current

FNG(Note1)

IOUT

1 circuits ON, Ta = 25°C 0 ― 45

mA/ch

tpw = 25 ms

8 circuits ON

Ta = 85°C

Tj = 120°C

Duty = 50% 0 ― 45

Duty = 100% 0 ― 33

FWG(Note2)

1 circuits ON, Ta = 25°C 0 ― 45

tpw = 25 ms

8 circuits ON

Ta = 85°C

Tj = 120°C

Duty = 50% 0 ― 45

Duty = 100% 0 ― 38

Input voltage (Output on) VIN (ON) IOUT = 45 mA, VOUT = 2 V 2.8 ― 25 V

Input voltage (Output off) VIN (OFF) IOUT = 100 μA or less, VOUT = 2 V 0 ― 0.6 V

Clamp diode forward current

IF ― ― ― 45 mA

Note1: On PCB (Size: 50 mm × 50 mm × 1.6 mm, Cu area: 40%, single-side glass epoxy).

Note2: On PCB (Size: 75 mm × 114 mm × 1.6 mm, Cu area: 20%, single-side glass epoxy).

TBD62183AFNG/FWG

2016-07-15

Electrical Characteristics (Ta = 25°C unless otherwise noted)

Characteristics Symbol

Tes t

Circuit

Condition Min Typ. Max Unit

Output leakage current Ileak 1 VOUT = 50 V, Ta = 85°C

VIN = 0 V ― ― 1.0 μA

Output voltage VOUT 2

IOUT = 45 mA, VIN =5.0 V ― 1.0 1.4

IOUT = 10 mA, VIN =5.0 V ― 0.8 1.0

Input current (Output on)

IIN (ON) 3 VIN = 3.0V ― ― 0.1 mA

Input current (Output off)

IIN (OFF) 4 VIN = 0 V, Ta = 85°C ―

―

1.0 μA

Input voltage (Output on)

VIN (ON) 5 IOUT = 45 mA, VOUT = 2 V ― ― 2.8 V

Clamp diode reverse current

IR 6 VR = 50 V, Ta = 85°C ― ― 1.0 μA

Clamp diode forward voltage

VF 7 IF = 45 mA ― ― 1.5 V

Turn−on delay

tON

VOUT = 50 V

RL = 1k Ω

CL = 15 pF

― 0.2 ―

μs

Turn−off delay tOFF ― 0.4 ―

TBD62183AFNG/FWG

2016-07-15

Test circuit

1. Ileak 2. VOUT

3. IIN (ON) 4. IIN (OFF)

5. VIN (ON) 6. IR

7. VF

Test circuit may be simplified for explanatory purpose.

COMMON

OUTPUT

INPUT

GND

VOUT

COMMON

OUTPUT

INPUT

GND

IOUT

VIN

VOUT

Ileak

COMMON

INPUT

GND

VIN

IIN(ON)

COMMON

INPUT

GND

IIN(OFF)

COMMON

OUTPUT

INPUT

GND

IOUT

VIN(ON)

VOUT

COMMON

OUTPUT

INPUT

GND

COMMON

OUTPUT

INPUT

GND

OUTPUT

TBD62183AFNG/FWG

2016-07-15

8. tON, tOFF

Note 1: Pulse width 50 μs, Duty cycle 10%

Output impedance 50 Ω, tr ≤ 5 ns, tf ≤ 10 ns, VIH = 5.0 V

Note 2: Includes the probe and the test board capacitance.

Test circuit and timing chart may be simplified for explanatory purpose.

Precautions for Using

This IC does not include built-in protection circuits for excess current or overvoltage.

If this IC is subjected to excess current or overvoltage, it may be destroyed.

Hence, the utmost care must be taken when systems which incorporate this IC are designed.

Utmost care is necessary in the design of the output line, COMMON and GND line since IC may be

destroyed due to short−circuit between outputs, air contamination fault, or fault by improper grounding.

(Note 2)

(Note 1)

TBD62183AFNG/FWG

2016-07-15

Package Dimensions

SSOP18-P-225-0.65 Unit: mm

Weight: 0.09 g (Typ.)

P-SOP18-0812-1.27-001 Unit: mm

Weight: 0.48 g (Typ.)

TBD62183AFNG/FWG

2016-07-15

Notes on Contents

1. Pin connection

Pin connection may be simplified for explanatory purpose.

2. Equivalent Circuits

Equivalent circuit may be simplified for explanatory purpose.

3. Test circuit

Test circuit may be simplified for explanatory purpose.

4. Timing chart

Timing charts may be simplified for explanatory purposes.

IC Usage Considerations

Notes on handling of ICs

(1) The absolute maximum ratings of a semiconductor device are a set of ratings that must not be exceeded, even for

a moment. Do not exceed any of these ratings. Exceeding the rating(s) may cause device breakdown, damage or

deterioration, and may result in injury by explosion or combustion.

(2) Do not insert devices in the wrong orientation or incorrectly. Make sure that the positive and negative terminals

of power supplies are connected properly. Otherwise, the current or power consumption may exceed the absolute

maximum rating, and exceeding the rating(s) may cause device breakdown, damage or deterioration, and may

result in injury by explosion or combustion. In addition, do not use any device inserted in the wrong orientation

or incorrectly to which current is applied even just once.

(3) Use an appropriate power supply fuse to ensure that a large current does not continuously flow in the case of

overcurrent and/or IC failure. The IC will fully break down when used under conditions that exceed its absolute

maximum ratings, when the wiring is routed improperly or when an abnormal pulse noise occurs from the

wiring or load, causing a large current to continuously flow and the breakdown can lead to smoke or ignition. To

minimize the effects of the flow of a large current in the case of breakdown, appropriate settings, such as fuse

capacity, fusing time and insertion circuit location, are required.

(4) If your design includes an inductive load such as a motor coil, incorporate a protection circuit into the design to

prevent device malfunction or breakdown caused by the current resulting from the inrush current at power ON

or the negative current resulting from the back electromotive force at power OFF. IC breakdown may cause

injury, smoke or ignition. Use a stable power supply with ICs with built-in protection functions. If the power

supply is unstable, the protection function may not operate, causing IC breakdown. IC breakdown may cause

injury, smoke or ignition.

(5) Carefully select external components (such as inputs and negative feedback capacitors) and load components

(such as speakers), for example, power amp and regulator. If there is a large amount of leakage current such as

from input or negative feedback condenser, the IC output DC voltage will increase. If this output voltage is

connected to a speaker with low input withstand voltage, overcurrent or IC failure may cause smoke or ignition.

(The overcurrent may cause smoke or ignition from the IC itself.) In particular, please pay attention when using

a Bridge Tied Load (BTL) connection-type IC that inputs output DC voltage to a speaker directly.

Points to remember on handling of ICs

Heat Radiation Design

When using an IC with large current flow such as power amp, regulator or driver, design the device so that heat is

appropriately radiated, in order not to exceed the specified junction temperature (Tj) at any time or under any condition.

These ICs generate heat even during normal use. An inadequate IC heat radiation design can lead to decrease in IC life,

deterioration of IC characteristics or IC breakdown. In addition, when designing the device, take into consideration the

effect of IC heat radiation with peripheral components.

Back-EMF

When a motor rotates in the reverse direction, stops or slows abruptly, current flows back to the motor’s power supply

owing to the effect of back-EMF. If the current sink capability of the power supply is small, the device’s motor power

supply and output pins might be exposed to conditions beyond the absolute maximum ratings. To avoid this problem, take

the effect of back-EMF into consideration in system design.

TBD62183AFNG/FWG

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