TBD62183AFNG/FWG TOSHIBA BiCD Integrated Circuit Silicon Monolithic TBD62183AFNG, TBD62183AFWG 8channel sink type DMOS transistor array TBD62183A series are DMOS transistor array with 8 circuits. It has a clamp diode for switching inductive loads built-in in each output. Please be careful about thermal conditions during use. TBD62183AFNG Features * * * 8 circuits built-in High voltage High current * * * Input voltage(output on) Input voltage(output off) Package : VOUT = 50 V (MAX) : IOUT = 50 mA/ch (MAX) SSOP18-P-225-0.65 : 2.8 V (MIN) : 0.6 V (MAX) : FNG type SSOP18-P-225-0.65 FWG type P-SOP18-0812-1.27-001 TBD62183AFWG P-SOP18-0812-1.27-001 Pin connection (top view) Weight SSOP18-P-225-0.65 : 0.09 g (Typ.) P-SOP18-0812-1.27-001 : 0.48 g (Typ.) Pin connection may be simplified for explanatory purpose. (c)2016 Toshiba Corporation 1 2016-07-15 TBD62183AFNG/FWG Pin explanations Pin No. Pin name Function 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 I1 I2 I3 I4 I5 I6 I7 I8 GND COMMON O8 O7 O6 O5 O4 O3 O2 O1 Input pin Input pin Input pin Input pin Input pin Input pin Input pin Input pin GND pin Common pin Output pin Output pin Output pin Output pin Output pin Output pin Output pin Output pin Equivalent circuit COMMON Clamp diode OUTPUT INPUT Clamp Equivalent circuit may be simplified for explanatory purpose. (c)2016 Toshiba Corporation 2 2016-07-15 TBD62183AFNG/FWG Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Output voltage COMMON pin voltage Output current Input voltage Clamp diode reverse voltage Clamp diode forward current FNG (Note1) Power dissipation FWG (Note2) Operating temperature Storage temperature VOUT 50 V VCOM -0.5 to 50 V IOUT 50 mA/ch VIN -0.5 to 30 V VR 50 V IF 50 mA 0.96 PD W 1.31 Topr -40 to 85 C Tstg -55 to 150 C Note1: On PCB (Size: 50 mm x 50 mm x 1.6 mm, Cu area: 40 %, single-side glass epoxy). When Ta exceeds 25 C, it is necessary to do the derating with 7.7 mW/C. Note2: On PCB (Size: 75 mm x 114 mm x 1.6 mm, Cu area: 20 %, single-side glass epoxy). When Ta exceeds 25 C, it is necessary to do the derating with 10.48 mW/C. (c)2016 Toshiba Corporation 3 2016-07-15 TBD62183AFNG/FWG Operating Ranges (Ta = -40 to 85 C, unless otherwise noted) Characteristics Symbol Condition Min Typ. Max Unit Output voltage COMMON pin voltage VOUT 50 V VCOM 0 50 V 0 45 Duty = 50% 0 45 Duty = 100% 0 33 0 45 Duty = 50% 0 45 Duty = 100% 0 38 1 circuits ON, Ta = 25C FNG(Note1) Output current IOUT tpw = 25 ms 8 circuits ON Ta = 85C Tj = 120C 1 circuits ON, Ta = 25C tpw = 25 ms 8 circuits ON Ta = 85C Tj = 120C FWG(Note2) mA/ch Input voltage (Output on) VIN (ON) IOUT = 45 mA, VOUT = 2 V 2.8 25 V Input voltage (Output off) VIN (OFF) IOUT = 100 A or less, VOUT = 2 V 0 0.6 V 45 Clamp diode forward current IF Note1: On PCB (Size: 50 mm x 50 mm x 1.6 mm, Cu area: 40%, single-side glass epoxy). Note2: On PCB (Size: 75 mm x 114 mm x 1.6 mm, Cu area: 20%, single-side glass epoxy). (c)2016 Toshiba Corporation 4 mA 2016-07-15 TBD62183AFNG/FWG Electrical Characteristics (Ta = 25C unless otherwise noted) Characteristics Symbol Test Circuit Output leakage current Ileak 1 Output voltage VOUT 2 Input current (Output on) IIN (ON) Input current (Output off) IIN (OFF) Input voltage (Output on) VIN (ON) Clamp diode reverse current IR Clamp diode forward voltage VF Turn-on delay tON Turn-off delay tOFF (c)2016 Toshiba Corporation Condition Min Typ. Max Unit VOUT = 50 V, Ta = 85C VIN = 0 V 1.0 A IOUT = 45 mA, VIN =5.0 V 1.0 1.4 IOUT = 10 mA, VIN =5.0 V 0.8 1.0 3 VIN = 3.0V 0.1 mA 4 VIN = 0 V, Ta = 85C 1.0 A 5 IOUT = 45 mA, VOUT = 2 V 2.8 V 6 VR = 50 V, Ta = 85C 1.0 A 7 IF = 45 mA 1.5 V 8 VOUT = 50 V RL = 1k CL = 15 pF 0.2 0.4 5 V s 2016-07-15 TBD62183AFNG/FWG Test circuit 1. Ileak 2. VOUT COMMON COMMON OUTPUT INPUT OUTPUT INPUT Ileak VOUT IOUT VOUT VIN GND GND 3. IIN (ON) 4. IIN (OFF) COMMON OUTPUT INPUT IIN(ON) VIN COMMON OUTPUT INPUT IIN(OFF) GND GND 5. VIN (ON) 6. IR COMMON COMMON IR OUTPUT INPUT IOUT VOUT VIN(ON) VR INPUT OUTPUT GND GND 7. VF COMMON IF VF INPUT OUTPUT GND Test circuit may be simplified for explanatory purpose. (c)2016 Toshiba Corporation 6 2016-07-15 TBD62183AFNG/FWG 8. tON, tOFF (Note 1) (Note 2) Note 1: Pulse width 50 s, Duty cycle 10% Output impedance 50 , tr 5 ns, tf 10 ns, VIH = 5.0 V Note 2: Includes the probe and the test board capacitance. Test circuit and timing chart may be simplified for explanatory purpose. Precautions for Using This IC does not include built-in protection circuits for excess current or overvoltage. If this IC is subjected to excess current or overvoltage, it may be destroyed. Hence, the utmost care must be taken when systems which incorporate this IC are designed. Utmost care is necessary in the design of the output line, COMMON and GND line since IC may be destroyed due to short-circuit between outputs, air contamination fault, or fault by improper grounding. (c)2016 Toshiba Corporation 7 2016-07-15 TBD62183AFNG/FWG Package Dimensions SSOP18-P-225-0.65 Unit: mm Weight: 0.09 g (Typ.) P-SOP18-0812-1.27-001 Unit: mm Weight: 0.48 g (Typ.) (c)2016 Toshiba Corporation 8 2016-07-15 TBD62183AFNG/FWG Notes on Contents 1. Pin connection Pin connection may be simplified for explanatory purpose. 2. Equivalent Circuits Equivalent circuit may be simplified for explanatory purpose. 3. Test circuit Test circuit may be simplified for explanatory purpose. 4. Timing chart Timing charts may be simplified for explanatory purposes. IC Usage Considerations Notes on handling of ICs (1) The absolute maximum ratings of a semiconductor device are a set of ratings that must not be exceeded, even for a moment. Do not exceed any of these ratings. Exceeding the rating(s) may cause device breakdown, damage or deterioration, and may result in injury by explosion or combustion. (2) Do not insert devices in the wrong orientation or incorrectly. Make sure that the positive and negative terminals of power supplies are connected properly. Otherwise, the current or power consumption may exceed the absolute maximum rating, and exceeding the rating(s) may cause device breakdown, damage or deterioration, and may result in injury by explosion or combustion. In addition, do not use any device inserted in the wrong orientation or incorrectly to which current is applied even just once. (3) Use an appropriate power supply fuse to ensure that a large current does not continuously flow in the case of overcurrent and/or IC failure. The IC will fully break down when used under conditions that exceed its absolute maximum ratings, when the wiring is routed improperly or when an abnormal pulse noise occurs from the wiring or load, causing a large current to continuously flow and the breakdown can lead to smoke or ignition. To minimize the effects of the flow of a large current in the case of breakdown, appropriate settings, such as fuse capacity, fusing time and insertion circuit location, are required. (4) If your design includes an inductive load such as a motor coil, incorporate a protection circuit into the design to prevent device malfunction or breakdown caused by the current resulting from the inrush current at power ON or the negative current resulting from the back electromotive force at power OFF. IC breakdown may cause injury, smoke or ignition. Use a stable power supply with ICs with built-in protection functions. If the power supply is unstable, the protection function may not operate, causing IC breakdown. IC breakdown may cause injury, smoke or ignition. (5) Carefully select external components (such as inputs and negative feedback capacitors) and load components (such as speakers), for example, power amp and regulator. If there is a large amount of leakage current such as from input or negative feedback condenser, the IC output DC voltage will increase. If this output voltage is connected to a speaker with low input withstand voltage, overcurrent or IC failure may cause smoke or ignition. (The overcurrent may cause smoke or ignition from the IC itself.) In particular, please pay attention when using a Bridge Tied Load (BTL) connection-type IC that inputs output DC voltage to a speaker directly. Points to remember on handling of ICs Heat Radiation Design When using an IC with large current flow such as power amp, regulator or driver, design the device so that heat is appropriately radiated, in order not to exceed the specified junction temperature (Tj) at any time or under any condition. These ICs generate heat even during normal use. An inadequate IC heat radiation design can lead to decrease in IC life, deterioration of IC characteristics or IC breakdown. In addition, when designing the device, take into consideration the effect of IC heat radiation with peripheral components. Back-EMF When a motor rotates in the reverse direction, stops or slows abruptly, current flows back to the motor's power supply owing to the effect of back-EMF. If the current sink capability of the power supply is small, the device's motor power supply and output pins might be exposed to conditions beyond the absolute maximum ratings. To avoid this problem, take the effect of back-EMF into consideration in system design. (c)2016 Toshiba Corporation 9 2016-07-15 TBD62183AFNG/FWG RESTRICTIONS ON PRODUCT USE * Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively "Product") without notice. * This document and any information herein may not be reproduced without prior written permission from TOSHIBA. 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