CLA 30 E 1200 HB V RRM = I T(AV)M = I T(RMS) = High Efficiency Thyristor Single Thyristor 1200 V 30 A 47 A Part number 2 CLA 30 E 1200 HB 1 3 Backside: anode Features / Advantages: Applications: Package: Thyristor for line frequency Planar passivated chip Long-term stability Softstart AC motor control DC Motor control Power converter AC power control Lighting and temperature control Housing: TO-247 rIndustry standard outline rEpoxy meets UL 94V-0 rRoHS compliant Ratings Conditions Symbol Definition VRSM/DSM max. non-repetitive reverse/forward blocking voltage VRRM/DRM max. repetitive reverse/forward blocking voltage I R/D reverse current, drain current VT forward voltage drop V 10 A VR/D = 1200 V TVJ = 125 C 2 mA TVJ = 25C 1.28 V 1.56 V 1.25 V IT = 30 A IT = 60 A IT = 30 A IT = 60 A RMS forward current 180 sine for power loss calculation only R thJC thermal resistance junction to case T VJ virtual junction temperature Ptot total power dissipation PGM max. gate power dissipation TVJ = 125 C 1.61 V T VJ = 150 C 30 A 47 A TVJ = 150 C 0.86 V 12.5 m 0.55 K/W 150 C TC = 25C 190 W T C = 150 C 10 W -40 t P = 30 s t P = 300 s PGAV average gate power dissipation I TSM max. forward surge current It CJ value for fusing junction capacitance IXYS reserves the right to change limits, conditions and dimensions. (c) 2011 IXYS all rights reserved V 1200 I T(RMS) slope resistance 1300 TVJ = 25C TC = 120 C threshold voltage Unit max. TVJ = 25C average forward current rT typ. VR/D = 1200 V I T(AV)M VT0 min. TVJ = 25C 5 W 0.5 W t = 10 ms; (50 Hz), sine TVJ = 45 C 300 A t = 8,3 ms; (60 Hz), sine VR = 0 V 325 A t = 10 ms; (50 Hz), sine TVJ = 150 C 255 A t = 8,3 ms; (60 Hz), sine VR = 0 V 275 A t = 10 ms; (50 Hz), sine TVJ = 45 C 450 As t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine VR = 0 V 440 As TVJ = 150 C 325 As 315 As t = 8,3 ms; (60 Hz), sine VR = 0 V VR = 400 V f = 1 MHz TVJ = 25C Data according to IEC 60747and per diode unless otherwise specified 13 pF 20110209d CLA 30 E 1200 HB Ratings Symbol Definition Conditions (di/dt) cr critical rate of rise of current TVJ = 150 C min. typ. max. Unit 40 A 150 VD = VDRM non-repetitive, I T = 30 A 500 A/s VD = VDRM TVJ = 150 C 500 V/s TVJ = 25 C 1.3 V TVJ = -40 C 1.6 V TVJ = 25 C 28 mA TVJ = -40 C 50 mA TVJ = 150 C 0.2 V 1 mA TVJ = 25 C 90 mA TVJ = 25 C 60 mA TVJ = 25 C 2 s repetitive, IT = A/s f = 50 Hz; tP = 200 s I (dv/dt) cr critical rate of rise of voltage VGT gate trigger voltage = 0.3 A; di /dt = 0.3 A/s R GK = ; method 1 (linear voltage rise) I GT gate trigger current VGD gate non-trigger voltage I GD gate non-trigger current IL latching current VD = 6 V VD = 6 V VD = VDRM t p = 10 s I = 0.3 A; di /dt = IH holding current VD = 6 V R GK = t gd gate controlled delay time VD = 1/2 VDRM I tq turn-off time = 0.3 A; di /dt = 0.3 A/s 0.3 A/s VR = 100 V; I T = 30 A TVJ = 150 C 150 s VD = VDRM ; t p = 200 s di/dt = 10 A/s; dv/dt = 20 V/s IXYS reserves the right to change limits, conditions and dimensions. (c) 2011 IXYS all rights reserved Data according to IEC 60747and per diode unless otherwise specified 20110209d CLA 30 E 1200 HB Ratings Symbol Definition Conditions I RMS RMS current per terminal R thCH thermal resistance case to heatsink Tstg storage temperature min. typ. max. Unit 50 0.25 -55 Weight K/W 150 6 MD mounting torque FC mounting force with clip A C g 0.8 1.2 Nm 20 120 N Part number C L A 30 E 1200 HB Product Marking Logo Marking on product DateCode Assembly Code = = = = = = = Thyristor (SCR) High Efficiency Thyristor (up to 1200 V) Current Rating [A] Single Part Reverse Voltage [V] TO-247AD (3) abcdef YYWWZ 000000 Assembly Line Ordering Standard Part Name CLA 30 E 1200 HB Similar Part CLA30E1200PB CLA30E1200PC CS22-12io1M CS22-08io1M CMA30E1600PN CMA30E1600PB IXYS reserves the right to change limits, conditions and dimensions. (c) 2011 IXYS all rights reserved Marking on Product CLA30E1200HB Package TO-220AB (3) TO-263AB (D2Pak) TO-220ABFP (3) TO-220ABFP (3) TO-220ABFP (3) TO-220AB (3) Delivering Mode Tube Base Qty Code Key 30 508221 Voltage class 1200 1200 1200 800 1600 1600 Data according to IEC 60747and per diode unless otherwise specified 20110209d CLA 30 E 1200 HB Outlines TO-247 A E A2 O P1 OP D2 S Q D1 D 2x E2 4 1 2 3 L1 E1 L 2x b2 b4 3x b C A1 2x e IXYS reserves the right to change limits, conditions and dimensions. (c) 2011 IXYS all rights reserved Sym. Inches min. max. Millimeter min. max. A A1 A2 D E E2 e L L1 OP Q S b b2 b4 c D1 D2 E1 O P1 0.185 0.209 0.087 0.102 0.059 0.098 0.819 0.845 0.610 0.640 0.170 0.216 0.215 BSC 0.780 0.800 0.177 0.140 0.144 0.212 0.244 0.242 BSC 0.039 0.055 0.065 0.094 0.102 0.135 0.015 0.035 0.515 0.020 0.053 0.530 0.29 4.70 5.30 2.21 2.59 1.50 2.49 20.79 21.45 15.48 16.24 4.31 5.48 5.46 BSC 19.80 20.30 4.49 3.55 3.65 5.38 6.19 6.14 BSC 0.99 1.40 1.65 2.39 2.59 3.43 0.38 0.89 13.07 0.51 1.35 13.45 7.39 Data according to IEC 60747and per diode unless otherwise specified 20110209d CLA 30 E 1200 HB 1000 400 60 VR = 0 V 50 300 TVJ = 45C 40 ITSM IT [A] 2 It TVJ = 45C 200 30 [A] TVJ = 150C 20 [A2s] TVJ = 125C 125C 100 TVJ = 125C 10 50 Hz, 80% VRRM TVJ = 25C 0 0.5 1.0 1.5 0 0.001 2.0 100 0.01 VT [V] 0.1 1 1 2 Fig. 1 Forward characteristics 4 5 6 7 8 910 2 Fig. 3 I t versus time (1-10 s) Fig. 2 Surge overload current ITSM: crest value, t: duration 102 4 3 t [ms] t [s] 60 IGD: TVJ = 125C B VG IGD: TVJ = 25C 2 [V] 1 IGD: TVJ = 0C B 50 C IGD: TVJ = -40C B 3 101 40 tgd 180 sine ITAVM 30 [A] [s] lim. 0 10 IGD: TVJ = 25C 20 typ. 10 A 10-1 10-2 0 0 25 50 75 IG [mA] 0 10-1 100 101 IG [A] Fig. 4 Gate voltage & gate current Fig. 5 Gate controlled delay time tgd Triggering: A = no; B = possible; C = safe 0 20 40 60 80 100 120 140 160 Tcase [C] Fig. 6 Max. forward current at case temperature 1 ZthJC Constants for ZthJC calculation: 0.1 i Rthi (K/W) 1 0.024 2 0.059 3 0.128 4 0.306 5 0.033 [K/W] 0.01 0.001 0.01 0.1 1 ti (s) 0.0005 0.0018 0.014 0.08 0.56 10 t [s] Fig. 7 Transient thermal impedance junction to case IXYS reserves the right to change limits, conditions and dimensions. (c) 2011 IXYS all rights reserved Data according to IEC 60747and per diode unless otherwise specified 20110209d