MOTOROLA SC {DIODES/OPTO} TECHNICAL DATA LeE D i b3jb?es5 OO7978a4 7 i MOTOROLA m= SEMICONDUCTOR EEE 500 MILLIWATT HERMETICALLY SEALED GLASS SILICON ZENER DIODES @ Complete Voltage Range 2.4 to 110 Volts @ Leadiess Package for Surface Mount Technology @ Double Slug Type Construction Metallurgicalily Bonded Construction @ Nitride Passivated Die @ Available in 8 mm Tape and Reel Ti Cathode Facing Sprocket Holes T2 Anode Facing Sprocket Holes MLL746 thru MLL759 MLL957A thru MLL9OS6A MLL4370 thru MLL4372 MAXIMUM RATINGS Rating Symbol Value Unit DC Power Dissipation @ Ta = 50C Pp 500 mw Derate above Ta = 50C 3.3 mWPC Operating and Storage Junction Ty. Tstg |-65 to +200 C Temperature Range LEADLESS GLASS ZENER DIODES 500 MILLIWATTS 2.4-110 VOLTS MECHANICAL CHARACTERISTICS CASE: Double slug type, hermetically sealed glass MAXIMUM LEAD TEMPERATURE FOR SOLDERING PURPOSES: 230C, for 10 seconds FINISH: All external surfaces are corrosion resistant and readily solderable POLARITY: Cathode indicated by color band. When operated in zener made, cathode will be positive with respect to anode MOUNTING POSITION: Any STEADY STATE POWER DERATING Pp, MAXIMUM POWER DISSIPATION (WATTS} 0 2 40 60 80 100 120 140 eo 190 T4, LEAD TEMPERATURE (C} AMBIENT um rj CASE 362-01 GLASS T= }) =I) 4-76- MOTOROLA SC {DIODES/OPTOF7. pp BZE D i b3b7255 0079485 Vy MLL746 thru MLL759, MLL957A thru MLL986A, MLL4370 thru MLL4372 ELECTRICAL CHARACTERISTICS (Ta = 25C, Ve = 1.5 V Max @ 200 mA for all types) Nominal Test Maximum Reverse Leakage Current Zener Voltage | Current | Maximum Zener impedance Maximum Type Vz @ Izy Iz7 2zt @ lzt DC Zener Current Ta = 25C Ta = 150C Number | (Notes 1,2,3) | (Note 2) (Note 4) lay IR@VR=1V | IR@VR=1V (Note 1) Volts mA Ohms mA HA BA MLL4370 2.4 20 _ 30 150 190 100 200 MLL4371 27 20 30 135 165 75 150 MLL4372 3.0 20 29 120 150 50 100 MLL746 3.3 20 28 110 135 10 30 MLL747 3.6 20 24 100 125 10 30 MLL748 3.9 20 23 95 116 10 30 MLL749 43 20 22 85 105 2 30 MLL750 47 20 19 75 95 2 30 MLL751 54 20 7 70 85 1 20 MLL752 5.6 20 11 65 80 1 20 MLL753 6.2 20 7 60 70 0.1 20 MLL754 68 20 5 55 65 0.1 20 MLL765 75 20 6 50 60 0.1 20 MLL756 8.2 20 8 45 55 0.1 20 MLL757 9.1 20 10 40 50 0.1 20 MLL758 10 20 17 35 45 0.1 20 MLL759 12 20 30 30 35 0.1 20 Nominal Test Maximum Zener impedance Zener Voltage | Current (Note 4) Maximum Maximum Reverse Current Type Vz lzr DC Zener Current Number | (Notes 1,2,3) | (Note 2) | Zzr @ Izr | Zzk @ lzx | zk im Ia Maximum | Test Voltage Vde (Note 1} Volts mA Ohms Ohms mA mA 5% Va 10% MLL957A 6.8 18.5 45 700 1.0 47 61 150 5.2 43 MLL958A 75 16.5 5.5 700 0.5 42 55 75 5.7 5.4 MLL959A 8.2 15 6.5 700 05 38 50 50 6.2 5.9 MLLS60A 9.1 14 75 700 0.5 35 45 25 6.9 6.6 MLL961A 10 12.5 8.5 700 0.26 32 a1 10 7.6 7.2 MLL962A 11 14.5 9.6 700 0.25 28 37 5 8.4 8.0 MLL963A 12 10.5 11.5 700 0.25 26 34 5 9.1 8.6 MLL964A, 13 9.5 13 700 0.25 24 32 5 9.9 9.4 MLLS65A 15 8.5 16 700 0.25 21 27 5 11.4 10.8 MLL966A 16 7.8 17 700 0.25 19 37 5 12.2 115 MLL967A 18 7.0 21 750 0.25 7 23 5 13.7 13.0 MLL968A 20 6.2 25 750 0.25 15 20 6 15.2 14.4 MLLS69A 22 5.6 29 750 0.25 14 18 5 16.7 15.8 MLL970A 24 5.2 33 750 0.25 13 17 5 18.2 17.3 MLL971A 27 4.6 41 750 0.25 11 15 5 20.6 19.4 MLL972A 30 4.2 49 1000 0.25 10 13 5 22.8 21.6 MLL973A 33 3.8 58 1000 0.25 9.2 12 5 25.1 23.8 MLL974A 36 3.4 70 1000 0.25 8.5 1 5 27.4 26.9 MLL975A 39 3.2 80 1000 0.25 78 10 5 29.7 28.1 MLL976A 43 3.0 93 1500 0.25 7.0 9.6 5 32.7 31.0 MLL977A 47 2.7 105 1500 0.25 6.4 8.8 5 35.8 33.8 MLL978A 51 2.5 125 1600 0.25 5.9 8.1 5 38.8 36.7 MLL979A 56 2.2 160 2000 0.25 5.4 7.4 5 42.6 40.3 MLL980A 62 2.0 185 2000 0.25 43 6.7 5 47.1 44.6 MLL9B1A 68 1.8 230 2000 0.25 45 6.1 5 51.7 49.0 MLL982A 75 1.7 270 2000 0.25 1.0 5.5 5 56.0 54.0 MLL983A 82 1.5 330 3000 0.25 3.7 5.0 5 62.2 59.0 MLL9844 91 1.4 400 3000 0.25 3.3 46 5 69.2 66.5 MLL985A 100 1.3 500 3000 0.25 3.0 45 5 76 72 MLL986A 110 14 750 4000 0.25 2.7 41 5 83.6 79.2 4-77MOTOROLA SC {DIODES/OPTOF H-M MLL746 thru MLL759, MLL957A thru MLL986A, MLL4370 thru MLL4372 NOTE 1. Tolerance Designation The type numbers shown have tolerance designations as follows: MLL4370 series: + 10%, suffix A for +5% units. MLL746 series: + 10%, suffix A for +5% units. MLL957 series: suffix A for + 10% units, suffix B for +5% units. NOTE 2. Special Selectionst Available Include: 1. Nominal zener voltages between those shown. 2. Two or more units for series connection with spec- ified tolerance on total voltage. Series matched sets make zener voltages in excess of 200 volts possible as well as providing lower temperature coefficients, lower dynamic impedance and greater power handling ability. 3. Nominal voltages at non-standard test currents. NOTE 3. Zener Voltage (Vz) Measurement Nominal zener voltage is measured with the device junction in thermal equilibrium at the case temperature of 30C 1C. NOTE 4. Zener Impedance (Zz) Derivation ZztT is measured by dividing the ac voltage drop across the device by the ac current applied. The specified limits are for Iz(ac) = 0.1 x (z(dc} with the ac frequency = 1.0 kHz. tFor mora information on special selections contact your nearest Motorola representative. APPLICATION NOTE Since the actual voltage available from a given zener diode is temperature dependent, it is necessary to de- termine junction temperature under any set of operat- ing conditions in order to calculate its value. The fol- lowing procedure is recommended: Case Temperature, Tc, should be determined from: Tc = 6caPp + Ta. 6ca is the case-to-ambient thermal resisstance (C/W) and Pp is the power dissipation. The value for ca will vary and depends on the device mounting method. @ca is generally 200C/W for the various clips and tie points in common use and for printed circuit board wiring. The temperature of the case can also be measured using a thermocouple placed at the case end as close as possible to the tie point. The thermal mass connected to the tie point is normally !arge enough so that it will not significantly respond to heat surges generated in the diode as a result of pulsed operation once steady- state conditions are achieved. Using the measured value of Tc, the junction temperature may be deter- mined by: Ty = Te + ATyc- ATyc is the increase in junction temperature above the case temperature and may be found by using: ATyc = 9cPp- For worst-case design, using expected limits of Iz, limits of Pp and the extremes of Ty(ATy) may be esti- mated. Changes in voltage, Vz, can then be found from: AV = 6yzATy. 6yz, the zener voltage temperature coefficient, is found from Figures 2 and 3. Under high power-pulse operation, the zener volt- age will vary with time and may also be affected sig- nificantly by the zener resistance. For best regulation, keep current excursions as low as possible. Surge limitations are given in Figure 6, They are lower than would be expected by considering only junction temperature, as current crowding effects cause temperatures to be extremely high in smail spots, resulting in device degradation should the tim- its of Figure 6 be exceeded. FIGURE 1 TYPICAL LEAKAGE CURRENT 10000 7000 5000 Typical Leakage Current at 80% of Nominal 2000 Breakdown Valtage 1000 700 500 200 100 70 Ip, LEAKAGE CURRENT {pA} 90 40 50 60 70 80 90 10 1 12 13 4 15 Vz, NOMINAL ZENER VOLTAGE (VOLTS) 4-78 Lee D i b3b?c55 0079846 ogoo OOEEEE__E EEE | MOTOROLA SC {DIODES/OPTO} TlI-t\ lee D i b3b7255 00798487 ef MLL746 thru MLL759, MLL957A thru MLL986A, MLL4370 thru MLL4372 Vz, TEMPERATURE COEFFICIENT (mV/C) Vz, TEMPERATURE COEFFICIENT (mV/C) Pox: PEAK SURGE POWER (WATTS) 20 #30 #40 50 60 70 80 90 W 12 FIGURE 2 TEMPERATURE COEFFICIENTS (-55C to + 150C temperature range; 90% of the units are in the ranges Indicated.) a RANGE FOR UNITS TO 12 VOLTS Vz, ZENER VOLTAGE (VOLTS) FIGURE 3 EFFECT OF ZENER CURRENT b RANGE FOR UNITS 12 TO 100 VOLTS 338 mw oa a on on & nm & V2, TEMPERATURE COEFFICIENT (m/C) a oO 2 S 20 30 50 70 100 Vz, ZENER VOLTAGE (VOLTS) FIGURE 4 TYPICAL CAPACITANCE +60 1000 + 500 Ta = 25C +4.0 - wen : Ta = BC 200 i | ga & wo 42.0 ws 20 mA AA = 3 20 0 A = YX Nootma 3 10 A Pio mA 3 -20 a NOTE: Below 3 volts and above 8 volts 0 changes in zener current do not 20 | affect temperature coefficients a . 1 OG 40 50 60 70 80 10 20 0 10 20 50 100 100 70 50 40 20 10 70 50 30 20 10 Vz, ZENER VOLTAGE (VOLTS) Vz, ZENER VOLTAGE (VOLTS) FIGURE 5 MAXIMUM SURGE POWER 11 V-91 Rectangular Nonvepetitive Waveform tous Ty = 25C Prior to 5% Duty Cycle 24V-10V 061 G02 005 0.1 a2 Os 10 Initial Pulse 20 50 10 20 50 100 200 00 1000 PW, PULSE WIDTH (ms) This graph cepresents 90 percentl data points. For worst-case design characteristics, multiply surge power hy 2/3. 4-79a EEO Ee k ~ MOTOROLA SC {LDIODES/OPTO} rf-lf 1cE D a b3b7255 0079644 4 i MLL746 thru MLL759, MLL957A thru MLL986A, MLL4370 thru MLL4372 FIGURE 6 EFFECT OF ZENER CURRENT FIGURE 7 EFFECT OF ZENER VOLTAGE ON ZENER IMPEDANCE ON ZENER IMPEDANCE 3 Ty = 25C ez(rms) = 0 1 Azide) = f= G0 Hz 3 200 S 3 an Zz, OYNAMIC IMPEDANCE (QHMS) 27, OYNAMIC IMPEDANCE (OHMS) x o = N - won wn a oo 8 a o 02 05 10 2.0 60 10 2 50 = 100 30 $0 70 0 20 ao Iz. ZENER CURRENT (mA) Vz, ZENER VOLTAGE {VOLTS} o ny o FIGURE 8 TYPICAL NOISE DENSITY FIGURE 9 NOISE DENSITY MEASUREMENT METHOD ona 172 250 pA Load Amplfier Tp = 259C : Resistor 2000 51 Filter True E 10c0 Ammater fg = 2.0 kHz RMS $ s00 DC Power Test fy = 1.0KHzZ | Vout | voit = Supply Zener fg = 3.0 kHz ever z 200 BW = 2.0 KHz 8 100 - a Noise Density . Vout 3 (Volts Per Squara Roat Bandwidth} = Overail Gain Vaw 3 Where: BW = Filtar Bandwidth (Hz) a Vour = Output Noise (Volts RMS) z The input voltage and load resistance are high so that the zener diode is driven from a constant current source. The amplifier is low noise so that the amplifier noise is negligible compared to 0 20 40 60 80 100 that of the test zener. The fifter bandpass is known so that the noise density can be calculated from the formula shown. Vz. ZENER VOLTAGE (VOLTS) =n OW Le in ec eo S52 8d FIGURE 10 TYPICAL FORWARD CHARACTERISTICS 1000 500 Maximum 200 100 50 2 10 $0 Ip, FORWARD CURRENT (mA) 20 are 04 05 06 a7 08 og 10 Mi Vg, FORWARD VOLTAGE (VOLTS) 4-80