2SK3135(L),2SK3135(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-695B (Z) 3rd. Edition February 1999 Features * Low on-resistance R DS(on) = 6 m typ. * Low drive current * 4 V gate drive device can be driven from 5 V source Outline LDPAK 4 4 2 1 1 1 3 2 3 2 3 1. Gate 2. Drain 3. Source 4. Drain 2SK3135(L),2SK3135(S) Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Drain to source voltage VDSS 60 V Gate to source voltage VGSS 20 V Drain current ID 75 A 300 A 75 A 50 A 214 mJ 100 W Drain peak current I D(pulse) Body-drain diode reverse drain current I DR Avalanche current Avalanche energy I AP Note 1 Note 3 EAR Note 3 Note 2 Channel dissipation Pch Channel temperature Tch 150 C Storage temperature Tstg -55 to +150 C Note: 2 1. PW 10 s, duty cycle 1% 2. Value at Tc = 25C 3. Value at Tch = 25C, Rg 50 2SK3135(L),2SK3135(S) Electrical Characteristics (Ta = 25C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V(BR)DSS 60 -- -- V I D = 10 mA, VGS = 0 Gate to source leak current I GSS -- -- 0.1 A VGS = 20 V, VDS = 0 Zero gate voltege drain current I DSS -- -- 10 A VDS = 60 V, VGS = 0 Gate to source cutoff voltage VGS(off) 1.0 -- 2.5 V I D = 1 mA, VDS = 10 V Note 1 Static drain to source on state RDS(on) -- 6.0 7.5 m I D = 30 A, VGS = 10 V Note 1 -- 8.0 12 m I D = 30 A, VGS = 4 V Note 1 resistance Forward transfer admittance |yfs| 50 80 -- S I D = 30 A, VDS = 10 V Note 1 Input capacitance Ciss -- 7100 -- pF VDS = 10 V Output capacitance Coss -- 1000 -- pF VGS = 0 Reverse transfer capacitance Crss -- 300 -- pF f = 1 MHz Total gate charge Qg -- 125 -- nc VDD = 25 V Gate to source charge Qgs -- 25 -- nc VGS = 10 V Gate to drain charge Qgd -- 25 -- nc I D = 75 A Turn-on delay time t d(on) -- 60 -- ns VGS = 10 V, ID = 40 A Rise time tr -- 300 -- ns RL = 0.75 Turn-off delay time t d(off) -- 520 -- ns Fall time tf -- 330 -- ns Body-drain diode forward voltage VDF -- 1.05 -- V I F = 75 A, VGS = 0 Body-drain diode reverse recovery time t rr -- 90 -- ns I F = 75 A, VGS = 0 diF/ dt = 50 A/ s Note: 1. Pulse test 3 2SK3135(L),2SK3135(S) Main Characteristics Power vs. Temperature Derating 1000 I D (A) Pch (W) 200 150 Maximum Safe Operation Area 300 100 DC Drain Current Channel Dissipation 30 100 50 10 3 1 50 100 Case Temperature 150 Tc (C) 100 3.5 V (A) Pulse Test ID 80 VGS = 10 V 5V 4V 60 40 3V 20 80 2 4 6 Drain to Source Voltage 8 10 V DS (V) 10 30 100 V DS (V) Typical Transfer Characteristics V DS = 10 V Pulse Test 60 40 20 2.5 V 0 3 Drain to Source Voltage Drain Current I D (A) Operation in this area is limited by R DS(on) 0.1 Ta = 25C 0.1 0.3 1 200 Typical Output Characteristics 100 Drain Current s( Op 1 e sh (T rati ot c = on ) 25 C ) 0.3 0 4 10 0 s PW s 1 m = s 10 m 10 25C 75C Tc = -25C 0 1 2 3 Gate to Source Voltage 4 5 V GS (V) 2SK3135(L),2SK3135(S) Drain to Source Saturation Voltage vs. Gate to Source Voltage 1.6 1.2 0.8 0.4 I D = 50 A 20 A 10 A 0 Static Drain to Source on State Resistance R DS(on) (m ) Drain to Source On State Resistance R DS(on) (m ) Pulse Test 16 20 16 20 A I D = 50 A 12 4 0 -50 Pulse Test 50 20 10 VGS = 4 V 5 10 V 2 1 V GS (V) Static Drain to Source on State Resistance vs. Temperature 20 Pulse Test 8 100 1 12 4 8 Gate to Source Voltage 10 A 4V 10, 20, 50 A VGS = 10 V 0 50 100 150 200 Case Temperature Tc (C) Forward Transfer Admittance |y fs | (S) Drain to Source Saturation Voltage V DS(on) (V) 2.0 Static Drain to Source on State Resistance vs. Drain Current 500 200 2 5 10 20 50 100 200 Drain Current I D (A) Forward Transfer Admittance vs. Drain Current V DS = 10 V Pulse Test 100 50 Tc = -25 C 20 10 5 2 25 C 75 C 1 0.5 0.1 0.3 1 3 10 30 Drain Current I D (A) 100 5 2SK3135(L),2SK3135(S) Body-Drain Diode Reverse Recovery Time 30000 VGS = 0 f = 1 MHz 500 Capacitance C (pF) Reverse Recovery Time trr (ns) 1000 200 100 50 20 10 0.1 di / dt = 50 A / s V GS = 0, Ta = 25 C 10000 1000 Coss 300 Crss 100 0 0.3 1 3 10 30 100 Reverse Drain Current I DR (A) 16 VDD = 50 V 25 V 10 V 40 20 0 12 8 VDD = 50 V 25 V 10 V 4 V CE 80 160 240 320 Gate Charge Qg (nc) 0 400 V GS (V) V GS 20 30 40 50 Switching Characteristics t d(off) 500 Switching Time t (ns) 60 1000 Gate to Source Voltage V DS (V) Drain to Source Voltage 80 10 Drain to Source Voltage V DS (V) 20 I D = 75 A Ciss 3000 Dynamic Input Characteristics 100 6 Typical Capacitance vs. Drain to Source Voltage tf 200 tr 100 t d(on) 50 20 V GS = 10 V, V DD = 30 V PW = 5 s, duty < 1 % 10 0.1 0.2 0.5 1 2 Drain Current 5 10 20 I D (A) 50 100 2SK3135(L),2SK3135(S) Maximun Avalanche Energy vs. Channel Temperature Derating Reverse Drain Current I DR (A) 100 10 V 80 5V 60 V GS = 0, -5 V 40 20 Pulse Test 0 0.4 0.8 1.2 Source to Drain Voltage 1.6 2.0 Repetitive Avalanche Energy E AR (mJ) Reverse Drain Current vs. Source to Drain Voltage 250 I AP = 50 A V DD = 25 V duty < 0.1 % Rg > 50 200 150 100 50 0 25 V SD (V) 50 100 125 150 Channel Temperature Tch (C) Avalanche Waveform Avalanche Test Circuit V DS Monitor 75 EAR = L 1 2 * L * I AP * 2 I AP Monitor VDSS VDSS - V DD V (BR)DSS I AP Rg D. U. T V DS VDD ID Vin 15 V 50 0 VDD 7 2SK3135(L),2SK3135(S) Normalized Transient Thermal Impedance vs. Pulse Width Normalized Transient Thermal Impedance s (t) 3 Tc = 25C 1 D=1 0.5 0.3 0.2 0.1 ch - c(t) = s (t) * ch - c ch - c = 1.25 C/W, Tc = 25 C 0.1 0.05 PDM 0.02 1 lse 0.0 t pu ho 1s 0.03 0.01 10 D= PW T PW T 100 1m 10 m Pulse Width 100 m 1 10 PW (S) Switching Time Test Circuit Waveform Vout Monitor Vin Monitor 90% D.U.T. RL Vin Vin 10 V 50 V DD = 30 V Vout 10% 10% 90% td(on) 8 tr 10% 90% td(off) tf 2SK3135(L),2SK3135(S) Package Dimensions 1.2 0.2 0.4 0.1 2.54 0.5 2.54 0.5 L type 2.54 0.5 (1.4) (1.5) (1.5) 1.27 0.2 3.0 +0.3 -0.5 2.59 0.2 4.44 0.2 8.6 0.3 10.0 +0.3 -0.5 10.2 0.3 1.27 0.2 0.76 0.1 1.3 0.2 11.3 0.5 4.44 0.2 11.0 0.5 1.2 0.2 0.86 +0.2 -0.1 8.6 0.3 10.0 +0.3 -0.5 (1.5) 10.2 0.3 (1.4) Unit: mm 1.3 0.2 0.1 +0.2 -0.1 2.59 0.2 0.4 0.1 0.86 +0.2 -0.1 2.54 0.5 S type Hitachi Code EIAJ JEDEC LDPAK -- -- 9 Cautions 1. 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