2SK3135(L),2SK3135(S)
Silicon N Channel MOS FET
High Speed Power Switching
ADE-208-695B (Z)
3rd. Edition
February 1999
Features
• Low on-resistance
RDS(on) = 6 mΩ typ.
• Low drive current
• 4 V gate drive device can be driven from 5 V source
Outline
1. Gate
2. Drain
3. Source
4. Drain
123
4
123
4
LDPAK
1
2
3
2SK3135(L),2SK3135(S)
2
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage VDSS 60 V
Gate to source voltage VGSS ±20 V
Drain current ID75 A
Drain peak current ID(pulse) Note 1 300 A
Body-drain diode reverse drain current IDR 75 A
Avalanche current IAP Note 3 50 A
Avalanche energy EAR Note 3 214 mJ
Channel dissipation Pch Note 2 100 W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Note: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg ≥ 50 Ω
2SK3135(L),2SK3135(S)
3
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown voltage V(BR)DSS 60——V I
D = 10 mA, VGS = 0
Gate to source leak current IGSS ——±0.1 µAV
GS = ±20 V, VDS = 0
Zero gate voltege drain current IDSS ——10µAV
DS = 60 V, VGS = 0
Gate to source cutoff voltage VGS(off) 1.0 — 2.5 V ID = 1 mA, VDS = 10 V Note 1
Static drain to source on state RDS(on) — 6.0 7.5 mΩID = 30 A, VGS = 10 V Note 1
resistance — 8.0 12 mΩID = 30 A, VGS = 4 V Note 1
Forward transfer admittance |yfs|5080—S I
D = 30 A, VDS = 10 V Note 1
Input capacitance Ciss — 7100 — pF VDS = 10 V
Output capacitance Coss — 1000 — pF VGS = 0
Reverse transfer capacitance Crss — 300 — pF f = 1 MHz
Total gate charge Qg — 125 — nc VDD = 25 V
Gate to source charge Qgs — 25 — nc VGS = 10 V
Gate to drain charge Qgd — 25 — nc ID = 75 A
Turn-on delay time td(on) — 60 — ns VGS = 10 V, ID = 40 A
Rise time tr— 300 — ns RL = 0.75 Ω
Turn-off delay time td(off) — 520 — ns
Fall time tf— 330 — ns
Body–drain diode forward voltage VDF — 1.05 — V IF = 75 A, VGS = 0
Body–drain diode reverse
recovery time trr — 90 — ns IF = 75 A, V
GS
= 0
diF/ dt = 50 A/ µs
Note: 1. Pulse test
2SK3135(L),2SK3135(S)
4
Main Characteristics
200
150
100
050 100 150 200 0.1 0.3 1 310 30 100
100
80
60
40
20
0246810
1000
300
100
30
10
1
0.3
0.1
3
Ta = 25°C
10 µs
100 µs
1 ms
DC Operation
(Tc = 25°C)
PW = 10 ms (1 shot)
3.5 V
3 V
50
V = 10 V
GS
5 V
4 V
2.5 V
100
80
60
40
20
012345
Tc = –25°C
25°C
75°C
V = 10 V
Pulse Test
DS
Pulse Test
Channel Dissipation Pch (W)
Case Temperature Tc (°C)
Power vs. Temperature Derating
Drain to Source Voltage V (V)
DS
Drain Current I (A)
D
Maximum Safe Operation Area
Drain to Source Voltage V (V)
DS
Drain Current I (A)
D
Typical Output Characteristics
Gate to Source Voltage V (V)
GS
Drain Current I (A)
D
Typical Transfer Characteristics
Operation in
this area is
limited by RDS(on)
2SK3135(L),2SK3135(S)
5
048
12 16 20
20
16
12
8
4
–50 0 50 100 150 200
0
V = 10 V
GS
4 V
Pulse Test
2.0
1.6
1.2
0.8
0.4
Pulse Test
I = 50 A
D20 A
10 A
120 100
2
100
2
5
110 200
20
10 V = 4 V
GS
10 V
Pulse Test
10, 20, 50 A
I = 50 A
D10 A
20 A
0.1 0.3 1 3 10 30 100
500
100
200
20
50
10
2
5
1
0.5
Tc = –25 °C
75 °C
25 °C
V = 10 V
Pulse Test
DS
50
505
Gate to Source Voltage V (V)
GS
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
V (V)
DS(on)
Drain to Source Saturation Voltage
Drain Current I (A)
D
Drain to Source On State Resistance
R (m )
Ω
DS(on)
Static Drain to Source on State Resistance
vs. Drain Current
Case Temperature Tc (°C)
R (m )
DS(on)
Static Drain to Source on State Resistance
Ω
Static Drain to Source on State Resistance
vs. Temperature
Drain Current I (A)
D
Forward Transfer Admittance |y | (S)
fs
Forward Transfer Admittance vs.
Drain Current
2SK3135(L),2SK3135(S)
6
0.1 0.3 1 3 10 30 100 01020304050
1000
10000
3000
100
80
60
40
20
0
20
16
12
8
4
80 160 240 320 400
0
1000
100
200
20
10
0.1 0.2 210 100
1000
500
100
200
20
50
10
di / dt = 50 A / µs
V = 0, Ta = 25 °C
GS
300
20
1
100
V = 0
f = 1 MHz
GS
Ciss
Coss
Crss
I = 75 A
D
V
GS
V
CE
V = 50 V
25 V
10 V
DD
V = 50 V
25 V
10 V
DD
0.5 5
500
50
50
V = 10 V, V = 30 V
PW = 5 µs, duty < 1 %
GS DD
r
t
d(on)
t
d(off)
t
tf
30000
Reverse Drain Current I (A)
DR
Reverse Recovery Time trr (ns)
Body–Drain Diode Reverse
Recovery Time
Capacitance C (pF)
Drain to Source Voltage V (V)
DS
Typical Capacitance vs.
Drain to Source Voltage
Gate Charge Qg (nc)
Drain to Source Voltage V (V)
DS
Gate to Source Voltage V (V)
GS
Dynamic Input Characteristics
Drain Current I (A)
D
Switching Time t (ns)
Switching Characteristics
2SK3135(L),2SK3135(S)
7
00.4 0.8 1.2 1.6 2.0
Pulse Test
V = 0, –5 V
GS
5 V
10 V
100
80
60
40
20
D. U. T
Rg
I
Monitor
AP
V
Monitor
DS
VDD
50Ω
Vin
15 V
0
ID
VDS
IAP
V(BR)DSS
L
VDD
E = • L • I •
2
1V
V – V
AR AP DSS
DSS DD
2
250
200
150
100
50
25 50 75 100 125 150
0
I = 50 A
V = 25 V
duty < 0.1 %
Rg > 50
AP
DD
Ω
Channel Temperature Tch (°C)
Repetitive Avalanche Energy E (mJ)
AR
Maximun Avalanche Energy vs.
Channel Temperature Derating
Source to Drain Voltage V (V)
SD
Reverse Drain Current I (A)
DR
Reverse Drain Current vs.
Source to Drain Voltage
Avalanche Test Circuit Avalanche Waveform
2SK3135(L),2SK3135(S)
8
Vin Monitor
D.U.T.
Vin
10 V
RL
V
= 30 V
DD
tr
td(on)
Vin
90% 90%
10%
10%
Vout
td(off)
Vout
Monitor
50Ω
90%
10%
tf
3
1
0.3
0.1
0.03
0.01
10 µ 100 µ 1 m 10 m 100 m 1 10
DM
P
PW
T
D = PW
T
ch – c(t) = s (t) • ch – c
ch – c = 1.25 °C/W, Tc = 25 °C
θ γ θ
θ
Tc = 25°C
D = 1
0.5
0.2
0.1
0.05
0.02
0.01
1shot pulse
Switching Time Test Circuit Waveform
Pulse Width PW (S)
Normalized Transient Thermal Impedance
s (t)
γ
Normalized Transient Thermal Impedance vs. Pulse Width
2SK3135(L),2SK3135(S)
9
Package Dimensions
Unit: mm
10.2 ± 0.3
(1.4)
8.6 ± 0.3
1.27 ± 0.2
1.2 ± 0.2
2.54 ± 0.5
11.3 ± 0.5
(1.5)
0.86+0.2
–0.1
3.0 +0.3
–0.5
0.76 ± 0.1
10.0+0.3
–0.5
2.54 ± 0.5
4.44 ± 0.2 1.3 ± 0.2
2.59 ± 0.2
0.4 ± 0.1
11.0 ± 0.5
10.2 ± 0.3
(1.4)
8.6 ± 0.3
1.27 ± 0.2
2.54 ± 0.5
(1.5)
0.86+0.2
–0.1
10.0+0.3
–0.5
2.54 ± 0.5
4.44 ± 0.21.3 ± 0.2
2.59 ± 0.2
0.4 ± 0.1
1.2 ± 0.2
(1.5)
0.1+0.2
–0.1
L type S type
Hitachi Code
EIAJ
JEDEC
LDPAK
—
—
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