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11
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
SWITCHES - SPDT T/R - SMT
11 - 2
General Description
Features
Functional Diagram
Low Insertion Loss: 0.5 dB
High Input IP3: +60 dBm
Positive Control: 0/+3V to 0 /+8V
High RF power Capability
MSOP - 8 SMT package, 14.8 mm2
Electrical Speci cations, TA = +25° C, Vdd = +5 Vdc, 50 Ohm System
Typical Applications
The HMC174MS8(E) is ideal for:
• Infrastructure & Repeaters
• Cellular/3G & WiMAX
• Portable Wireless
• LNA Protection
• Automotive Telematics
• Test Equipment
The HMC174MS8 & HMC174MS8E are low-cost
SPDT switches in 8-lead MSOP packages for use in
transmit-receive applications which require very low
distortion at high signal power levels. The device can
control signals from DC to 3 GHz and is especially
suited for cellular/3G and WiMAX applications with
only 0.5 dB loss. The design provides exceptional
intermodulation performance; providing a +60 dBm
third order intercept at 8 Volt bias. RF1 and RF2 are
re ective shorts when “OFF”. On chip circuitry allows
single positive supply operation at very low DC current
with control inputs compatible with CMOS and most
TTL logic families.
Parameter Frequency Min. Typ. Max. Units
Insertion Loss
DC - 1.0 GHz
DC - 2.0 GHz
DC - 2.5 GHz
DC - 3.0 GHz
0.4
0.5
0.8
1.3
0.7
0.8
1.1
1.8
dB
dB
dB
dB
Isolation
DC - 1.0 GHz
DC - 2.0 GHz
DC - 2.5 GHz
DC - 3.0 GHz
21
21
18
15
26
26
23
20
dB
dB
dB
dB
Return Loss
DC - 1.0 GHz
DC - 2.0 GHz
DC - 2.5 GHz
DC - 3.0 GHz
25
20
15
12
dB
dB
dB
dB
Input Power for 1 dB Compression 0/8V Control 0.5 - 1.0 GHz
0.5 - 3.0 GHz
32
32
36
36
dBm
dBm
Input Third Order Intercept 0/8V Control 0.5 - 1.0 GHz
0.5 - 3.0 GHz
55
49
60
56
dBm
dBm
Switching Characteristics DC - 3.0 GHz
tRISE, tFALL (10/90% RF)
tON, tOFF (50% CTL to 10/90% RF)
10
24
ns
ns
HMC174MS8 / 174MS8E
GaAs MMIC T/R SWITCH
DC - 3 GHz
v04.0109
11
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
SWITCHES - SPDT T/R - SMT
11 - 3
HMC174MS8 / 174MS8E
v04.0109
GaAs MMIC T/R SWITCH
DC - 3 GHz
Insertion Loss Isolation Between RFC & RF1/RF2
Return Loss
Input P1dB vs. Vdd
RF1 to RF2 Isolation
Input P0.1dB vs. Vdd
-2
-1.5
-1
-0.5
0
0 0.5 1 1.5 2 2.5 3 3.5 4
+25C
+85C
-40C
INSERTION LOSS (dB)
FREQUENCY (GHz)
-40
-35
-30
-25
-20
-15
-10
-5
0
0 0.5 1 1.5 2 2.5 3 3.5 4
+25C
+85C
-40C
ISOLATION (dB)
FREQUENCY (GHz)
-40
-35
-30
-25
-20
-15
-10
-5
0
0 0.5 1 1.5 2 2.5 3 3.5 4
RF1 ON
RF2 ON
ISOLATION (dB)
FREQUENCY (GHz)
-40
-35
-30
-25
-20
-15
-10
-5
0
0 0.5 1 1.5 2 2.5 3 3.5 4
+25C
+85C
-40C
RETURN LOSS (dB)
FREQUENCY (GHz)
20
25
30
35
40
45
0 0.5 1 1.5 2 2.5 3
3V
5V
8V
P0.1dB (dBm)
FREQUENCY (GHz)
20
25
30
35
40
45
0 0.5 1 1.5 2 2.5 3
3V
5V
8V
P1dB (dBm)
FREQUENCY (GHz)
11
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
SWITCHES - SPDT T/R - SMT
11 - 4
HMC174MS8 / 174MS8E
v04.0109
GaAs MMIC T/R SWITCH
DC - 3 GHz
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Input P0.1dB vs. Temperature Input P1dB vs. Temperature
2nd & 3rd Harmonics @ 1900 MHz
2nd & 3rd Harmonics @ 900 MHz
Input Third Order Intercept
Bias Voltage Range (Vdd) -0.2 to +10 Vdc
Control Voltage Range (A & B) -0.2 to +Vdd Vdc
Storage Temperature -65 to +150 °C
Operating Temperature -40 to +85 °C
ESD Sensitivity (HBM) Class 1A
Absolute Maximum Ratings
20
25
30
35
40
45
0 0.5 1 1.5 2 2.5 3
+25C
+85C
-40C
P0.1dB (dBm)
FREQUENCY (GHz)
20
25
30
35
40
45
0 0.5 1 1.5 2 2.5 3
+25C
+85C
-40C
P1dB (dBm)
FREQUENCY (GHz)
0
10
20
30
40
50
60
70
0 0.5 1 1.5 2 2.5 3
3v
5v
8v
IP3 (dBm)
FREQUENCY (GHz)
0
10
20
30
40
50
60
70
80
345678
2Fo
3Fo
HARMONICS (dBc)
Vdd (VOLTS)
0
10
20
30
40
50
60
70
80
345678
2Fo
3Fo
HARMONICS (dBc)
Vdd (VOLTS)
11
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
SWITCHES - SPDT T/R - SMT
11 - 5
HMC174MS8 / 174MS8E
v04.0109
GaAs MMIC T/R SWITCH
DC - 3 GHz
Truth Table *Control Input Voltage Tolerances are ± 0.2 Vdc
Bias Control Input* Bias Current Control Current Signal Path State
Vdd
(Vdc)
A
(Vdc)
B
(Vdc)
Idd
(uA)
Ia
(uA)
Ib
(uA) RF to RF1 RF to RF2
30030-15-15OFFOFF
30Vdd25-250ONOFF
3Vdd0 25 0 -25OFFON
500110-55-55OFFOFF
5 0 Vdd 115 -100 -15 ON OFF
5Vdd0115-15-100OFFON
10 0 0 380 -190 -190 OFF OFF
10 0 Vdd 495 -275 -220 ON OFF
10 Vdd 0 495 -220 -275 OFF ON
5 -Vdd Vdd 600 -600 225 ON OFF
5 Vdd -Vdd 600 225 -600 OFF ON
Package Information
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS].
3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
5. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND.
Outline Drawing
Part Number Package Body Material Lead Finish MSL Rating Package Marking [3]
HMC174MS8 Low Stress Injection Molded Plastic Sn/Pb Solder MSL1 [1] H174
XXXX
HMC174MS8E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL1 [2] H174
XXXX
[1] Max peak re ow temperature of 235 °C
[2] Max peak re ow temperature of 260 °C
[3] 4-Digit lot number XXXX
11
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
SWITCHES - SPDT T/R - SMT
11 - 6
HMC174MS8 / 174MS8E
v04.0109
GaAs MMIC T/R SWITCH
DC - 3 GHz
Pin Descriptions
Pin Number Function Description Interface Schematic
1 A See truth table and control voltage table.
2 B See truth table and control voltage table.
3, 5, 8 RFC, RF1, RF2 This pin is DC coupled and matched to 50 Ohm.
Blocking capacitors are required.
4Vdd Supply Voltage.
6, 7 GND This pin must be connected to RF/DC ground.
Typical Application Circuit
Notes:
1. Set logic gate and switch Vdd = +3V to +5V and use HCT series logic to provide a TTL driver interface.
2. Control inputs A/B can be driven directly with CMOS logic (HC) with Vdd of 3 to 8 Volts applied to the CMOS logic gates and to
pin 4 of the RF switch.
3. DC Blocking capacitors are required for each RF port as shown. Capacitor value determines lowest frequency of operation.
4. Highest RF signal power capability is achieved with V set to +8V. The switch will operate properly (but at lower RF power
capability) at bias voltages down to +3V.
11
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
SWITCHES - SPDT T/R - SMT
11 - 7
Evaluation Circuit Board
HMC174MS8 / 174MS8E
v04.0109
GaAs MMIC T/R SWITCH
DC - 3 GHz
The circuit board used in the nal application
should be generated with proper RF circuit design
techniques. Signal lines at the RF port should
have 50 ohm impedance and the package ground
leads should be connected directly to the ground
plane similar to that shown above. The evaluation
circuit board shown above is available from Hittite
Microwave Corporation upon request.
Item Description
J1 - J3 PCB Mount SMA RF Connector
J4 - J7 DC Pin
C1 - C3 100 pF capacitor, 0402 Pkg.
C4 10,000 pF capacitor, 0603 Pkg.
U1 HMC174MS8(E) T/R Switch
PCB [2] 104122 Evaluation PCB
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: Rogers 4350
List of Materials for Evaluation PCB 104124 [1]
