PN3567 n = 2 s) 4 F NPN - SILICON TRANSISTOR ~ DESCRIPTION TO-92 PN3567 is NPN _ silicon planar epitaxial transistor designed for amplifier and switching applications. EBC ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage Voso 80V Collector-Emitter Voltage VcEo 60V Emitter-Base Voltage VEBo SV Collector Current Ic 500mA Continuous Power Dissipation Py 600mW Operating & Storage Junction Temperature Tj T stg -55 to +150C ~~ ELECTRICAL CHARACTERISTICS (Ta=25C) PARAMETER SYMBOL |MIN MAX | UNIT | TEST CONDITIONS Collector-Base Breakdown Voltage BVCBO 80 V Ic=100pnA IE=0 Collector-Emitter Breakdown Voltage | LVCEO 40 V Ic=10mA Ip=0* Emitter-Base Breakdowm Voltage BVEBO 5 V Ig=l0uA Ic= Collector Cutoff Current ICBO 50 | nA |Vcp=40V Ig= D.C. Current Gain HFE 40 Ic=30mA VcE=1V* 40 120 Ic=150mA Vce=1V* Collector-Emitter Saturation Voltage | VCE(sat) 0.25; V Ic=150mA Ip=15mA* Output Capacitance Cob 20] pF | Vcp=10V f=1MHz \Current Gain-Bandwidth Product FT 60 600! MHz :Ic=50mA VcE=1V * Pulse Test : Pulse Width = 300uS, Duty Cycle = 2%. MICRO ELECTRONICS LTD. 38, Hung To Road, Microtron Bulding, Kwun Tong, Kowloon, Hong Kong. Kwun Tong P.O. Box 69477 Hong Kong. Fax No. 2341 0321 Telex:43510 Micro Hx. Tel: 2343 0181-5 Dec-96