-Numerical Index VARAC TOR DIODES INDEX (continued) 1N4808-1N5153 CAPACITANCE MULTIPLIER PERFORMANCE | Voltage P PAGE I D . | TPE | yumeer | , | lotmay! Rage | Be| a@t | HX) @ Min Min C; Tol | Eaminy | Vi yp" 25C | Pin | fin | Pout | four | 7 o 2 prot % 1 Volts | Voits | Volts GHz | ohms | Watts |Watts| GHz | Watts | GHz | % 1N4808 27 20 |2.46 0 14.0 65 15 }0.05 0.50 1N4808A 27 10 | 2.46 0 14.0 65 15 |0.05 0.50 1N4808B 27 5.0 12.46 0 14.0 65 15 }0.05 0.50 1LN4 8086 27 2.0 12.46 444.90 65 L5 $0.05 9.50 1N4808D 27 1.0 |2.46 0 14.0 65 15 }0.05 0.50 1N4 809 33 20 12.46 0 44.0 60 15 }0.05 0.50 1N4809A 33 10 |2.46 0 14.0 60 15 |0.05 0.50 1N4809B 33 5.0 12.46 0 14.0 60 15 70.05 0.50 1N4809C 33 2.0 12.46 0 44.0 60 15 490.05 9.50 1N4809D 33 1.0 [2.46 0 14.0 60 15 |0.05 0.50 1N4810 39 20 12.44 Q 44.0 55 15 10.05 0.50 1N4810A 39 10 {2.44 0 14.0 55 15 |0.05 0.50 1N4810B 39 5.0 12,44 0 14.0 55 15 10.05 0.50 1N4810C 39 2.0 12.44 Q 14.0 55 15 10.05 0.50 1N4810D 39 1.0 12.44 oO 14.0 55 15 |0.05 0.50 1N4811 47 20 12.43 0 14.0 50 15 |0.05 0.50 1IN4811A 47 10 (2.43 Q 14.0 50 15 {0.05 0.50 1N4811B 47 5.0 12.43 0 14.0 50 15 ;0.05 0.50 1N4811C 47 2.0 |2.43 0 {4.0 50 15 |0.05 0.50 1N4811D 47 1.0 (2.43 Q 14.0 50 15 0.05 0.50 1N4812 56 20 12.42 0 14.0 40 15 |0.05 0.50 1N4812A 56 10 | 2.42 0 (4.0 40 15 10.05 0.50 1N4812B 56 5.0 | 2.42 Oo 14.0 40 15 |0.05 0.50 1N4812C 56 2.0 12,42 0 14.0 40 15 70.05 0.50 1N4812D 56 1.0 [2.42 0 {4.0 40 15 [0.05 0.50 1N4813 68 20 |2.40 0 {4.0 30 15 |0.05 0.50 1N4813A 68 10 | 2.40 0 14.0 30 15 $0.05 0.50 1N4813B 68 5.0 [2.40 0 44.0 30 15 [0.05 0.50 1N4813C 68 2.0 |2.40 0 14.0 30 15 [0.05 0.50 1N4813D 68 1.0 |2.40 0 14.0 30 15 |0.05 0.50 1N4814 82 20 |2.36 0 14.0 20 15 {0.05 0.50 1N4814A 82 10 |} 2.36 0 14.0 20 15 |0.05 0.50 1N4814B 82 5.0 | 2.36 Oo 14.0 20 15 |0.05 0.50 1N4814C 82 2.0 {2.36 0 14.0 20 15 [0.05 0.50 1N4814D 82 1,0 | 2.36 0 14.0 20 15 10.05 0.50 1N4815 100 20 12.33 0 14.0 20 15 10.05 0.50 LN4815A 100 10 | 2.33 0 14.0 20 15 |0.05 0.50 1N4815B 100 5.0 | 2.33 0 14.0 20 15 ]0.05 0.50 1N4815C 100 2.0 |2.33 0 |4.0 20 15 |0.05 0,50 1N4815D 100 1.0 12.33 0 14.0 20 15 |0.05 0.50 1N4885 35 2.57 16.0 [150 | 150 0.70 20 1N4886 35 2.57 |6.0 {120 | 120 0.80 20 1N4941 0.4 2.0 Q 16.0 |6.0 4} 2000 10 2.0 0.1 1N5139 12-10 6.8% 10 2.9 |4.0 60 60 350 |0.05 0.4 1N5139A 12-10 6.8% 5.0 2.9 14.0 60 60 350 |0.05 0.4 1N5140 12-10 10* 10 3.0 | 4.0 60 60 300 {0.05 0.4 1N5140A 12-10 10* 5.0 3.0 |4.0 60 60 300 |0.05 0.4 1N5141 12-10 12* 10 3.0 14.0 60 60 300 }0.05 O.4 IN5141A 12-10 12* 5.0 3.0 14.0 60 60 300 |0.05 0.4 1N5142 12-10 15* 10 3.0 14.0 60 60 250 70.05 0.4 1N5142A 12-10 15* 5.0 3.0 14.0 60 60 250 | 0.05 0.4 1N5143 12-10 18% 10 3.0 [4.0 60 60 250 |0.05 0.4 IN5143A 12-10 18% 5.0 3.0 )4.0 60 60 250 |0.05 0.4 1N5144 12-10 22* 10 3.4 14.0 60 60 200 |0.05 0.4 1N5144A 12-10 22* 5.0 3.4 14.0 60 60 200 |0.05 0.4 IN5145, 12-10 27% 190 3.4 44.0 60 60 200 |}0.05 0.4 1N5145A 12-10 27% 5.0 3.4 [4.0 60 60 200 {0.05 0.4 1N5146 12-10 33% 10 3.4 [4.0 60 60 200 10.05 0.4 LN5 146A 12-10 33% 5.9 3.4 14.0 60 60 200 |0.05 0.4 1N5147 12-10 39% 10 3.4 [4.0 60 60 200 10.05 0.4 LN5S147A 12-10 39% 5.0 3.4 14.0 60 60 200 10.05 0.4 1N5148 12-10 47* 10 3.4 ]4.0 60 60 200 {0.05 0.4 IN5148A 12-10 47* 5.0 3.4 ]4.0 60 60 200 |0.05 0.4 IN5149 12-12 411.5% 80 800 40.05 10 20 40.5 li 1.0 55 LN5150 12-12 |11.5* 80 800 |0.05 14 37 $0.5 24 1.0 65 LNSLSOA 42-15 12 19 aa 800 10.05 10.25%) 29.2 37 10.5 [25.1 1.0 68 IN5151 12-17 5.8% 75 11100 10.05 0.5 5.5 12 [1.0 6.0 2.0 50 LN5152 12-17 5.8% 75 |1100 | 0.05 0.5 5.5 12 [1.0 6.0 2.0 50 1N5152A 12-15 6.0 10 75 | 1100 |0.05 0O.5*! 11.7 12 |1.0 7.5 2.0 60 1N5153 12-17 5.8* 75 {1100 | 0.05 0.5 5.5 12 {1.0 6.0 2.0 50 1-89Voltage Variable Capacitance Diodes In5151 V,=75V (MV1808A) I; =0.25A in5152 P>=5.5W (MV1808B) Silicon high-frequency step-recovery power varac- IN 5 1 53 tors, designed for high-power, high-frequency harmon- ic generation applications. (MV1808C) OM cathode \ cathode N Zp cathode CASE 48 CASE 46 CASE 47 (1IN5151) (1N5152) (1N5153) (pill) (pill with prongs) (cartridge) MAXIMUM RATINGS (Ta = 25C unless otherwise noted) Rating Symbol Value Unit Reverse Voltage Vr 75 Vdc Forward Current Ip 0.25 Adc RF Power Input Pi 15 Watts Total Device Dissipation @ Te= 75C Ph 5.5 Watts Derate above 75C 45 mW/C Junction Temperature T J 200 C Storage Temperature T stg -65 to +200 C ELECTRICAL CHARACTERISTICS (Ta = 25C unless otherwise noted) Characteristic Condition Symbol} Min Typ Max Unit Reverse Breakdown Voltage IR = 10 pAdc BV, 15 80 _ Vdc Reverse Current VR = 60 Vde I _ 0.5 1 uAdcC Vp = 60 Vde, Ty = 150C - _ 100 Series Resistance VR = 6 Vdc, f = 50 MHz Rg _ 0.5 - Ohms Diode Capacitance VR = 6 Vde, f = 50 MHz c.* 5.0 5.8 7.5 pF VR = 10 Vdc, f = 50 MHz - 4 _ Figure of Merit VR = 6 Vdc, f = 50 MHz Q - 1100 - - Power Output DOUBLER TEST CIRCUIT} P t 6.0 12 _ Watts (Figure 1) ou Efficiency Pi, 712 W, f,,, = 1GHz n 50 60 - % f = 2 GHz out Thermal Resistance 9 - 19 23 C/Watt! * = Ch Cs + Co 12-17Voltage Variable Capacitance Diodes 1TN5151, 1N5152, 1N5153 (continued) FIGURE 1 HARMONIC DOUBLER EFFICIENCY TEST CIRCUIT 1 GHz Z,, #250 ohms Pi,mml2W 1 GHz COAX CAVITY SL hey 2 GHz COAX CAVITY \ Y 0.8- 10 pF 20 ohm >) HH? ate | Tout #90 ohms SL 1 MEGOHM dre FIGURE 2 LINEARITY CHARACTERISTIC WITHOUT RETUNING Pou. POWER OUTPUT (WATTS) 10 8.0 6.0 40 2.0 0 | | | | vA a < { | | | a we} GHz ou 2 GHz (CIRCUIT TUNED FOR 12 WATTS INPUT POWER) asm 150 & ators 20 on IN RE um | 2.0 4.0 6.0 8: Q 6 Pig, POWER INPUT (WATTS) 12-1 8 t 4 16Voltage Variable Capacitance Diodes 1N5151, 1N5152, 1N5153 (continued) POWER OUTPUT TYPICAL CHARACTERISTICS at 25C versus OUTPUT FREQUENCY FIGURE 4 FIGURE OF MERIT FIGURE 3A DOUBLING (X2) versus REVERSE VOLTAGE 2000 | | f = 50 MHz Lr 1000 4 = {- E = 700 | i = = 7 i z S 500 ~~ 2 = 300 | IZ. ADMITTANCE-BRIDGE EQUIPMENT 2 y, LIMITATIONS PREVENT ACCURATE 3 1 MEASUREMENTS ABOVE Q = 1000 o 200-44 | 100 | 0 500 1000 +1500 +2000 +~+~2500 05. 07 10 2030 50 70 10 foun, OUTPUT FREQUENCY (MHz| Vp, REVERSE VOLTAGE (Vde} FIGURE 5 VARACTOR CAPACITANCE FIGURE 3B TRIPLING (X3) versus REVERSE VOLTAGE 5.0 20 at \ NY 10 E 40 ONY P= 9W | eo 7.0 e Tt aes A *o = SR & 3.0 a B= 3W 10 r 20 i" =1W 9 500 1000 1500 2000 +2500 +3000'+~3500 507 10 ~ 20 30~0 7010 20 30 50 70 100 four OUTPUT FREQUENCY (MHz) Vey REVERSE VOLTAGE (VOLTS) FIGURE 6 DOUBLER EFFICIENCY FIGURE 3C QUADRUPLING (X4) versus CASE TEMPERATURE 70 60 = g [~~ z > = z 80 Pi, = 12W = 5 in = 1 GHz a & fous = 2 GHz & g 4 = 2 = = - 30 0 500 -1000~=~=S0]S=S*OSSC*iOSC*t]SC GO 0 30 7 100 125 four, OUTPUT FREQUENCY (MHz) Te, CASE TEMPERATURE (C) 12-19Numerical Index IN5117-1N5234A RECTIFIERS ZENER DIODES =z e Vp Ve . = = pace | = | Wolts) | (olts) camps) | 2(mit) may] Ve% | Po TYPE fe | REPLACEMENT = . m NUMBER | = 2 T (min) +: Tmax) | : oho ae : : Cc * 1N5117 8 1M200ZSB5 2-29 ZD 400* 5.0 1.0W 1N5118 Ss ZD 14% 5.0 | 3.0W 1N5119 ZD 40* 5.0 3.0W 1N5120 s ZD 45* 5.0 3.0W 1N5121 s ZzD 50% 5.0 3.0W 1N5122 8 ZD 60* 5.0 3.0W 1N5123 s ZD 70* 5.0 3.0W 1N5124 s ZD 80* 5.0 3.0W 1N5125 8 ZD 90% 5.0 3.0W 1N5126 S ZD 140% 5.0 3.0W 1N5127 s zZzD 170* 5.0 3.0W 1N5128 s ZD 190* 5.0 3.0W 1N5129 s ZD 260* 5.0 3.0W 1N5130 s ZD 280% 5.0 3.0W 1N5131 i) ZD 320* 5.0 } 3.0W 1N5132 s ZD 340% 5.0 | 3.0W 1N5133 s ZzD 380% 5.0 | 3.0W 1N5134 s zD 400* 5.0 } 3.0W 1N5139 thru Varactors, See table on page 1-86 1N5157 | 1N5150A Varactor, See table on page 1-86 1N5152A Varactor, See table on page 1-86 IN5153A Varactor, See table on page 1-86 IN5155A Varactor, See table on page 1-86 1N5156 thru Varactors, See table on page 1-86 1N5157 } 1N5158 thru 4-Layer Diodes, See table on Page 1-96 1N5160 1N5163 s Harmonic Generator 1N5181 s R 4000 0.6 0.02 1N5182 s R 5000 0.6 0.02 1N5183 Ss R 7500 0.6 0.02 1N5184 Ss R 10,000 0.6 0.02 1N5197 8 R 50 2.0 0.1 1N5198 Ss R 100 2.0 0.1 1N5199 s R 200 2.0 0.1 1N5200 8 R 400 2.0 0.1 1N5201 s R 600 2.0 O.1 1N5221 8 2-32 ZD 2.4% 10 500M 1N5221A s 2-32 ZD 2.4% 10 500M 1N5221B S 2-32 ZzD 2.4% 5.0 500M 1N5222 s 2-32 zD 2.5* 10 | 500M 1N5222A s 2-32 2D 2.5% 10 500M 1N5222B s 2-32 ZD 2.5% 5.0 500M 1N5223 5 2-32 ZzD 2.7% 10 500M 1N5223A | S 2-32 ZD 2.7% 10 | 500M 1N5223B s 2-32 ZzD 2.7% 5.0 500M 1N5224 8 2-32 ZD 2.8% 10 500M 1N5224A | S 2-32 2D 2.8% 10 | 500M 1N5224B s 2-32 ZD 2.8% 5.0 500M 1N5225 2-32 ZD 3.0% 10 500M 1N5225A | S 2-32 2D 3.0% 10 | 500M 1N5225B s 2-32 ZD 3.0* 5.0 500M 1N5226 8 2-32 ZD 3.3% 10 500M 1N5226A | S 2-32 ZD 3.3% 10 | 500M 1N5226B S 2-32 ZD 3.3% 5.0 500M 1N5227 s 2-32 ZD 3.6% 10 500M 1N5227A 8 2-32 ZD 3.6% 10 500M 1N5227B s 2-32 ZD 3.6% 5.0 500M 1N5228 Ss 2-32 zD 3.9% 10 500M 1N5228A Ss 2-32 ZD 3.9% 10 500M 1N5228B s 2-32 ZD 3.9% 5.0 500M 1N5229 8 2-32 ZD 4.3% 10 500M 1N5229A |] S 2-32 ZD 4.3% 10 | 500M 1N5229B 8 2-32 ZD 4.3% 5.0 500M 1N5230 S 2-32 ZD 47% 10 500M 1N5230A 8 2-32 zD 4.7% 10 500M 1N5230B 8 2-32 ZD 4.7% 5.0 500M 1N5231 S 2-32 zD 5.1* 10 500M 1N5231A 8 2-32 ZzD 5.1% 10 500M 1N5231B s 2-32 ZD 5.1% 5.0 500M 1N5232 8 2-32 ZD 5.6% 10 500M 1N5232A $ 2-32 zD 5.6* 10 500M 1N5232B $ 2-32 ZD 5.6% 5.0 500M 1N5233 s 2-32 zD 6.0* 10 500M 1N5233A Ss 2-32 ZD 6.0% 10 500M 1N5233B | S 2-32 ZD 6.0% 5.0 | 500M 1N5234 s 2-32 ZD 6.2% 10 500M 1N5234A Ss 2-32 zD 6.2% 10 500M R~Rectifier, RDReference Diode, ZDZener Diode, GPGeneral Purpose, HCHigh Conductance (= 20mA @ =1V), HS High Speed Switch (Max ty, < 0.38), CSHigh Conductance, High Speed Switch, MSMedium Speed Switch, PAParametric Amplifier, SP Special Purpose. 1-81