= FAIRCHIL D SEMICONDUCTOR ay ref 34b9674 oo27a70 & T IRF150-153 N-Channel Power MOSFETs, 40 A, 60 V/100 V Dd FAIRCHILD ee A Schlumberger Company . ! Power And Discrete Division T-39-13 __ \ Description TO-204AE These devices are n-channel, enhancement mode, power MOSFETs designed especially for high power, high speed S applications, such as switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers and high energy pulse circuits. VA @ Low Ropsion) @ Vcs Rated at +20 V rspoezor Silicon Gate for Fast Switching Speeds Ings, SOA Specified at Elevated Temperature ewe! Rugged IRF152 @ Low Drive Requirements IRF153 Ease of Paralleling Maximum Ratings x Rating Rating z Symbol Characteristic IRF 150/152 IRF151/153 Unit _ Voss. Drain to Source Voltage! 100 60 Vv : Voar Drain to Gate Voltage 100 60 Vv : Res = 20 kQ ; Ves Gate to Source Voitage +20 +20 Vv ; Ty. Tstg | Operating Junction and -55 to +150 -55 to +150 C Storage Temperatures TL Maximum Lead Temperature 275 275 C \ for Sotdering Purposes, 1/8" From Case for 5 s Maximum On-State Characteristics ; IRF150/151 IRF 152/153 ; Ros (on) | Static Drain-to-Source 0.055 0.08 Q On Resistance? } Ip Drain Current A Continuous 40 33 Pulsed 60 132 . Maximum Thermal Characteristics Reuc Thermal Resistance, 0.83 0.83 C/W Junction to Case \ 1 Pp Total Power Dissipation 150 150 w \ at To = 25C | Notes For information concerning connection diagram and package outline, refer to Section 7. 2-83 worst yr: = FAIRCHILD S EMICONDUCTOR Electrical Characteristics (Tc = 25C unless otherwise noted) Symbol Characteristic | Min | Max | Unit | Test Conditions Off Characteristics Vieryoss | Drain Source Breakdown Voltage! Vv Veg =0 V, Ip = 250 pA IRF150/152 100 IRF 151/153 60 Ibss Zero Gate Voltage Drain Current 250 BA Vps = Rated Voss, Veg = 0 V i 1000 pA Vps = 0.8 x Rated Vogs, Vas =0 V, To = 125C lass Gate-Body Leakage Current +100 nA Vas = +20 V, Vpg =0 V On Characteristics Vastth) Gate Threshold Voitage 2.0 4.0 Vv Ip = 250 pA, Vos = Ves Ropscon) Static Drain-Source On-Resistance? Q Ves =10 V, Ip=20A IRF150/151 0.055 IRF152/153 0.08 Os Forward Transconductance 9.0 S$ (5) Vps = 10 V, Ip=20 A Dynamic Characteristics Ciss Input Capacitance 3000 pF Vos = 25 V, Vas =0 V Coss Output Capacitance 1500 pF f= 1.0 MHz Crsg Reverse Transfer Capacitance 500 pF Switching Characteristics (Tc = 25C, Figures 9, 10)? ta(on) Turn-On Delay Time 35 ns Vop = 24 V, Ip=20 A t Rise Time 100 ns pes = 10 Na Poen = 4.7 0 tuoi Turn-Off Delay Time 125 ns t Fall Time 100 ns ta(on Turn-On Delay Time 75 ns Vpp = 75 V, Ilp=20 A t Rise Time 450 ns Ros = to % Raen = 50 82 tafotn Turn-Off Delay Time 300 ns t Fall Time 200 ns Qg Total Gate Charge 120 nc Veg =10 V, lp =50 A Vop = 55 V 2-84 prore L FAIRCHILD SEMICONDUCTOR omen ay DEB aue9b74 O027872 1 Tr IRF 150-153 T~39~13 Electrical Characteristics (Cont.) (Tc = 25C unless otherwise noted) Symbo! Characteristic | Typ Max | Unit | Test Conditions Source-Drain Diede Characteristics Vsp Diode Forward Voltage IRF150/151 2.0 2.5 Vv Is = 40 A; Vag=0 V IRF152/153 2.0 23 Vv Ig = 83 A; Vag =0 V tr Reverse Recovery Time 300 ns Ig =4 A; dig/dt =25 A/uS E Notes 1, Ty = +28C to +150C 2. Pulse test: Pulse width <80 ys, Duty cycle <1% 3. Switching time measurements performed on LEM TR-58 test equipment. Typical Performance Curves Figure 1 Output Characteristics v ipDAAIN CURRENTA o 0.4 0.8 1.2 1.6 2.0 VosDRAIN SOURCE VOLTAGEV PCIDIIE Figure 3 Transfer Characteristics = 10 32 24 Ip--DRAIN CURRENT~A 2 3 4 5 6 7 8 8 Vas GATE TO SOURCE VOLTAGE-V PoIO1s6r Rosten)-STATIC DRAIN TO SOURCE RESISTANCE 2 Figure 2 Static Drain to Source Resistance 0.42 0.04 0.02 vs Drain Current 0.14 = 10V 0.10 Ty = 125C 0.08 0.06 Ty = 25C Ty = - 86C o Oo 4 & 12 16 20 24 2% 32 38 40 tp DRAIN CURRENTA PCIO140F Figure 4 Temperature Variation of Gate to NORMALIZED GATE THRESHOLD VOLTAGE Source Threshold Voltage 143 Voe = Vos Ip=1.0mA 0.9 0.8 O7 0 $0 0 60 100 180 T,-JUNCTION TEMPERATUREC Pooaa4iF 2-85 women FAIRCHILD SEMICONDUCTOR _ 3469674 FAIRCHILD SEMICONDUCTOR 84 a J4b9b74 00274873 3 7 84D 27873 D ; IRF 150-153 7-39-13 Typical Performance Curves (Cont.) Figure 5 Capacitance vs Drain to Source Voltage sae 5 CCAPACITANCEpF _ a 10? : we 2 = 101 z 5 10? VpsDRAIN TO SOURCE VOLTAGEV PoLOTEOr Figure 7 Forward Biased Safe Operating Area 2 10 ne 5 : 2 < = | =z ge 2 AREA MAY 2 g BY tC ce Zz 3B tot 3 z z =z < a & 5 y 1 L t 2 2 ' = a : Ty< 180C 2 [SINGLE PULSE w= =m CURRENT LIMITED 10 109 2 5 tot 2 8 102 VosDRAIN TO SOURCE VOLTAGEV PCIIEOOF Typical Electrical Characteristics Figure 9 Switching Test Circuit Vin Voo Rt PULSE GENERATOR Vout 1H CROMSOF Figure 6 Gate to Source Voltage vs Total Gate Charge VasGATE TO SOURCE VOLTAGEV o 40 60 120 160 QgTOTAL GATE CHARGEnC Posor7or Figure 6 Transient Thermal Resistance vs Time 10" z 10 th a = E PD 2 at @ 10-? = ~he! =~ tH Duty Factor, = "z Ocurves epply ta train of heating pulses 19-2 Sige hae io-1 190 tot 10? 108 104 tTIMEma PCIO1egF Figure 10 Switching Waveforms j ton tow l OUTPUT, Vout INVERTED INPUT, Vin 2-86