NTTD4401F FETKYPower MOSFET and Schottky Diode -20 V, -3.3 A P-Channel with 20 V, 1.0 A Schottky Diode, Micro8 Package The FETKY product family incorporates low RDS(on), true logic level MOSFETs packaged with industry leading, low forward drop, low leakage Schottky Barrier Diodes to offer high efficiency components in a space saving configuration. Independent pinouts for TMOS and Schottky die allow the flexibility to use a single component for switching and rectification functions in a wide variety of applications. http://onsemi.com MOSFET PRODUCT SUMMARY ID Max 70 m @ -4.5 V -3.3 A 100 m @ -2.7 V -2.7 A -20 V Features * Low VF and Low Leakage Schottky Diode * Lower Component Placement and Inventory Costs along with Board * RDS(on) Typ V(BR)DSS Space Savings Logic Level Gate Drive - Can be Driven by Logic ICs SCHOTTKY DIODE SUMMARY VR Max IF Max VF Max 20 V 2.0 A 600 mV @ IF = 2.0 A Applications * * * * Buck Converter Synchronous Rectification Low Voltage Motor Control Load Management in Battery Packs, Chargers, Cell Phones, and other Portable Products A S G MOSFET MAXIMUM RATINGS (TA = 25C unless otherwise noted) Symbol Value Unit Drain-to-Source Voltage VDSS -20 V Gate-to-Source Voltage VGS -10 V ID 3.3 A Rating Continuous Drain Current (Note 1) Power Dissi Dissipation ation (Note 1) TA = 25C TA = 100C Steady State Continuous Drain Current (Note 2) Steady State TA = 25C 25 C PD 1.42 W TA = 25C ID 2.4 A PD 0.78 Pulsed Drain Current t = 10 s TA = 25C 25 C Operating Junction and Storage Temperature Single Pulse Drain-to-Source Avalanche Energy Starting TA = 25C (t 10 s) Lead Temperature for Soldering Purposes (1/8 from case for 10 s) 1.5 IDM TJ, TSTG W 10 A -55 to 150 August, 2004 - Rev. 3 8 EAS 150 mJ TL 260 C 1 SCHOTTKY DIODE Micro8 CASE 846A 1 MARKING DIAGRAM & PIN CONNECTIONS ANODE 1 ANODE 2 SOURCE 3 GATE 4 C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Surface-mounted on FR4 board using 1 inch sq pad size (Cu area = 1.127 in sq [1 oz] including traces). 2. Surface-mounted on FR4 board using the minimum recommended pad size (Cu area = 0.172 in sq). Semiconductor Components Industries, LLC, 2004 P-Channel MOSFET 2.1 TA = 100C Power Dissi Dissipation ation (Note 2) C D YWW BG 8 CATHODE 7 CATHODE 6 DRAIN 5 DRAIN (Top View) Y = Year WW = Work Week BG = Device Code ORDERING INFORMATION Device Package Shipping NTTD4401FR2 Micro8 4000/Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: NTTD4401F/D NTTD4401F SCHOTTKY DIODE MAXIMUM RATINGS (TA = 25C unless otherwise noted) Symbol Rating Value Unit Peak Repetitive Reverse Voltage V 20 V Average Forward Current (Rated VR, TA = 100C) IO 1.0 A Peak Repetitive Forward Current (Note 3) IFRM 2.0 A Non-Repetitive Peak Surge Current (Note 4) IFSM 20 A THERMAL RESISTANCE RATINGS FET Rating Schottky Max Symbol Unit Junction-to-Ambient - Steady State (Note 5) RJA 88 135 C/W Junction-to-Ambient - Steady State (Note 6) RJA 160 250 C/W ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage V(BR)DSS VGS = 0 V -20 - - V Zero Gate Voltage Drain Current (Note 7) IDSS VGS = 0 V, VDS = -16 V - - -1.0 A VGS = 0 V, TJ = 125C, VDS = -16 V - - -25 Gate-to-Source Leakage Current IGSS VDS = 0 V, VGS = 10 V - - 100 nA ON CHARACTERISTICS VGS(TH) VGS = VDS, ID = -250 A -0.5 - -1.5 V Negative Threshold Temperature Coefficient VGS(TH)/TJ - - 2.5 - mV/C Drain-to-Source On Resistance RDS(on) ( ) VGS = -4.5 V, ID = -3.3 A - 70 90 m VGS = -2.5 V, ID = -1.2 A - 100 150 VDS = -10 V, ID = -2.7 A - 4.2 - S - 550 750 pF - 200 300 - 50 175 Gate Threshold Voltage Forward Transconductance gFS CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS Total Gate Charge VGS = 0 V, V f = 1.0 1 0 MHz, MH VDS = -16 V QG(TOT) nC - 10 18 - 1.5 3.0 QGD - 5.0 10 td(ON) - 11 20 - 35 65 - 33 60 - 29 55 - -0.88 -1.0 V - 37 50 ns - 16 - - 21 - - 0.025 0.05 Gate-to-Source Gate Charge QGS Gate-to-Drain "Miller'' Charge VGS = -4.5 45V V, VDS = -16 16 V, V ID = -3.3 A SWITCHING CHARACTERISTICS Turn-On Delay Time Rise Time Turn-Off Delay Time tr td(OFF) Fall Time VGS = -4.5 V, VDD = -10 V, ID = -3.3 A, RG = 6.0 tf ns DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD Reverse Recovery Time tRR Charge Time ta Discharge Time tb Reverse Recovery Charge 3. 4. 5. 6. 7. VGS = 0 V, IS = -2.0 A VGS = 0 V V, dIS/dt = 100 A/ A/s, IS = -3.3 A QRR - Rated VR, square wave, 20 kHz, TA = 105C. Surge applied at rated load conditions, half-wave, single phase, 60 Hz. Surface-mounted on FR4 board using 1 inch sq pad size (Cu area = 1.127 in sq [1 oz] including traces). Surface-mounted on FR4 board using the minimum recommended pad size (Cu area = 0.172 in sq). Body diode leakage current. http://onsemi.com 2 nC NTTD4401F SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) Characteristic Symbol Test Condition Min Typ Reverse Breakdown Voltage BV IR = 1.0 mA Reverse Leakage Current IR Forward Voltage VF VR = 20 V IF = 1 1.0 0A IF = 2 2.0 0A Voltage Rate of Change dV/dt VR = 20 V http://onsemi.com 3 Max Unit 20 - - V TA = 25C - - 0.05 mA TA = 125C - - 10 TA = 25C - - 0.5 TA = 125C - - 0.39 TA = 25C - - 0.6 TA = 125C - - 0.53 - 10,000 - V V/s NTTD4401F TYPICAL ELECTRICAL CHARACTERISTICS 5 4 VGS = -10 V VGS = -4.5 V VGS = -2.5 V 3 TJ = 25C -ID, DRAIN CURRENT (AMPS) -ID, DRAIN CURRENT (AMPS) VGS = -2.1 V VGS = -1.9 V 2 VGS = -1.7 V 1 VGS = -1.5 V 4 3 2 TJ = 25C 1 TJ = 100C 0 2 4 6 8 1 10 3 2.5 Figure 2. Transfer Characteristics RDS(on), DRAIN-TO-SOURCE RESISTANCE () Figure 1. On-Region Characteristics 0.15 0.1 0.05 0 2 4 8 6 -VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 0.12 TJ = 25C 0.1 VGS = -2.7 V 0.08 VGS = -4.5 V 0.06 0.04 1 1.5 2 2.5 3 3.5 4 4.5 -ID, DRAIN CURRENT (AMPS) Figure 3. On-Resistance vs. Gate-to-Source Voltage Figure 4. On-Resistance vs. Drain Current and Gate Voltage 1.6 1000 VGS = 0 V ID = -3.3 A VGS = -4.5 V TJ = 125C -IDSS, LEAKAGE (nA) 100 1.2 1 0.8 0.6 -50 2 -VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) TJ = 25C 1.4 1.5 -VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 0.2 RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) TJ = 55C 0 0 RDS(on), DRAIN-TO-SOURCE RESISTANCE () VDS > = -10 V TJ = 100C 10 TJ = 25C 1 0.1 0.01 -25 0 25 75 50 100 125 TJ, JUNCTION TEMPERATURE (C) 150 0 Figure 5. On-Resistance Variation with Temperature 4 8 12 16 -VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 6. Drain-to-Source Leakage Current vs. Voltage http://onsemi.com 4 20 NTTD4401F C, CAPACITANCE (pF) VDS = 0 V 1200 VGS = 0 V Ciss TJ = 25C 900 Crss Ciss 600 300 Coss Crss 0 10 5 0 -VGS -VDS 5 10 15 20 5 20 16 4 14 3 Q1 10 Q2 8 2 6 1 ID = -3.3 A TJ = 25C VDS 2 0 0 2 4 6 8 12 10 Figure 8. Gate-to-Source and Drain-to-Source Voltage vs. Total Charge 100 td (off) t, TIME (ns) tr tr tf td (on) 10 tf td (off) VDD = -10 V ID = -3.3 A VGS = -4.5 V td (on) 1.0 10 10 1.0 14 Qg, TOTAL GATE CHARGE (nC) VDD = -10 V ID = -1.2 A VGS = -2.7 V 100 4 0 Figure 7. Capacitance Variation t, TIME (ns) 12 VGS GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS) 1000 18 QT 100 RG, GATE RESISTANCE () 1.0 10 RG, GATE RESISTANCE () 100 Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Resistive Switching Time Variation vs. Gate Resistance -IS, SOURCE CURRENT (AMPS) 2 1.6 VGS = 0 V TJ = 25C di/dt IS trr 1.2 ta tb TIME 0.8 0.25 IS tp IS 0.4 0 0.4 0.5 0.6 0.7 -VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 1500 -VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS 0.8 0.9 1 Figure 12. Diode Reverse Recovery Waveform -VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) Figure 11. Diode Forward Voltage vs. Current http://onsemi.com 5 NTTD4401F Rthja(t), EFFECTIVE TRANSIENT THERMAL RESPONSE 1 D = 0.5 0.2 0.1 Normalized to Rja at Steady State (1 inch pad) 0.1 0.0125 0.0563 0.110 0.273 0.113 0.436 2.93 F 152 F 261 F 0.05 0.02 0.01 0.021 F 0.137 F 1.15 F Single Pulse 0.01 1E-03 1E-02 1E-01 1E+00 1E+03 1E+02 1E+03 t, TIME (s) Figure 13. FET Thermal Response 10 IF, INSTANTANEOUS FORWARD CURRENT (AMPS) IF, INSTANTANEOUS FORWARD CURRENT (AMPS) TYPICAL SCHOTTKY ELECTRICAL CHARACTERISTICS TJ = 125C 1.0 85C 25C -40 C 0.1 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 10 TJ = 125C 85C 1.0 25C 0.1 0 VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) 0.2 0.4 0.6 0.8 1.0 1.2 VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (VOLTS) Figure 14. Typical Forward Voltage Figure 15. Maximum Forward Voltage http://onsemi.com 6 1.4 NTTD4401F TYPICAL SCHOTTKY ELECTRICAL CHARACTERISTICS IR, MAXIMUM REVERSE CURRENT (AMPS) IR, REVERSE CURRENT (AMPS) 1E-2 TJ = 125C 1E-3 85C 1E-4 1E-5 25C 1E-6 1E-7 1E-1 TJ = 125C 1E-2 1E-3 1E-4 25C 1E-5 1E-6 0 5.0 15 10 20 0 5.0 VR, REVERSE VOLTAGE (VOLTS) Figure 17. Maximum Reverse Current IO , AVERAGE FORWARD CURRENT (AMPS) 1000 100 10 10 15 1.6 dc 1.2 SQUARE WAVE 1.0 Ipk/Io = 0.8 Ipk/Io = 5.0 0.6 Ipk/Io = 10 0.4 Ipk/Io = 20 0.2 0 0 20 FREQ = 20 kHz 1.4 20 VR, REVERSE VOLTAGE (VOLTS) 40 60 0.6 dc SQUARE WAVE Ipk/Io = Ipk/Io = 5.0 0.4 Ipk/Io = 10 0.3 Ipk/Io = 20 0.2 0.1 0 0 100 120 Figure 19. Current Derating 0.7 0.5 80 TA, AMBIENT TEMPERATURE (C) Figure 18. Typical Capacitance PFO , AVERAGE POWER DISSIPATION (WATTS) C, CAPACITANCE (pF) TYPICAL CAPACITANCE AT 0 V = 170 pF 5.0 20 VR, REVERSE VOLTAGE (VOLTS) Figure 16. Typical Reverse Current 0 15 10 0.5 1.0 1.5 IO, AVERAGE FORWARD CURRENT (AMPS) Figure 20. Forward Power Dissipation http://onsemi.com 7 2.0 140 160 NTTD4401F PACKAGE DIMENSIONS Micro8 CASE 846A-02 ISSUE F -A- -B- K PIN 1 ID NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MOLD FLASH, PROTRUSIONS OR GATE BURRS SHALL NOT EXCEED 0.15 (0.006) PER SIDE. 4. DIMENSION B DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION. INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.25 (0.010) PER SIDE. 5. 846A-01 OBSOLETE, NEW STANDARD 846A-02. G D 8 PL 0.08 (0.003) M T B A S S SEATING -T- PLANE 0.038 (0.0015) C L J H MILLIMETERS MIN MAX 2.90 3.10 2.90 3.10 --- 1.10 0.25 0.40 0.65 BSC 0.05 0.15 0.13 0.23 4.75 5.05 0.40 0.70 DIM A B C D G H J K L INCHES MIN MAX 0.114 0.122 0.114 0.122 --- 0.043 0.010 0.016 0.026 BSC 0.002 0.006 0.005 0.009 0.187 0.199 0.016 0.028 SOLDERING FOOTPRINT* 8X 1.04 0.041 0.38 0.015 3.20 0.126 6X 8X 4.24 0.167 0.65 0.0256 5.28 0.208 SCALE 8:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. FETKY is a trademark of International Rectifier Corporation. Micro8 is a trademark of International Rectifier. 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