Semiconductor Components Industries, LLC, 2004
August, 2004 − Rev. 3 1Publication Order Number:
NTTD4401F/D
NTTD4401F
FETKYPower MOSFET
and Schottky Diode
−20 V, −3.3 A P−Channel with 20 V,
1.0 A Schottky Diode, Micro8 Package
The FETKY product family incorporates low RDS(on), true logic
level MOSFETs p ackaged w ith industry l eading, l ow f orward d rop, low
leakage Schottky Barrier Diodes t o offer high efficiency co mponents i n
a space saving configuration. Independent pinouts for TMOS and
Schottky die allow the flexibility to use a single component for
switching and rectification functions in a wide variety of applications.
Features
•Low VF and Low Leakage Schottky Diode
•Lower Component Placement and Inventory Costs along with Board
Space Savings
•Logic Level Gate Drive – Can be Driven by Logic ICs
Applications
•Buck Converter
•Synchronous Rectification
•Low Voltage Motor Control
•Load Management in Battery Packs, Chargers, Cell Phones, and
other Portable Products
MOSFET MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating Symbol Value Unit
Drain−to−Source Voltage VDSS −20 V
Gate−to−Source Voltage VGS −10 V
Continuous Drain
Current (Note 1)
TA = 25°CID3.3 A
Current (Note 1) TA = 100°C 2.1
Power Dissipation Steady TA = 25°C PD1.42 W
Power
Dissi ation
(Note 1)
Steady
State
TA
25 C
PD
1
.
42
W
Continuous Drain
Current (Note 2)
TA = 25°CID2.4 A
Current (Note 2) TA = 100°C 1.5
Power Dissipation Steady TA = 25°C PD0.78 W
Power
Dissi ation
(Note 2)
Steady
State
TA
25 C
PD
0
.
78
W
Pulsed Drain
Current t = 10 s IDM 10 A
Operating Junction and Storage
Temperature TJ, TSTG −55 to 150 °C
Single Pulse Drain−to−Source
Avalanche Energy
Starting TA = 25°C (t 10 s)
EAS 150 mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s) TL260 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Surface−mounted on FR4 board using 1 inch sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
2. Surface−mounted on FR4 board using the minimum recommended pad size
(Cu area = 0.172 in sq).
Device Package Shipping†
ORDERING INFORMATION
NTTD4401FR2 Micro8 4000/Tape & Reel
Micro8
CASE 846A
G
D
P−Channel MOSFET
S
C
A
SCHOTTKY DIODE
−20 V
20 V
100 m @ −2.7 V
70 m @ −4.5 V
600 mV @ IF = 2.0 A
RDS(on) Typ
2.0 A
ID Max
V(BR)DSS
MOSFET PRODUCT SUMMARY
SCHOTTKY DIODE SUMMARY
VR Max VF MaxIF Max
−3.3 A
−2.7 A
1
8
MARKING DIAGRAM
& PIN CONNECTIONS
Y = Year
WW = Work Week
BG = Device Code
8
7
6
5
1
2
3
4
ANODE
ANODE
SOURCE
GATE
CATHODE
CATHODE
DRAIN
DRAIN
(Top View)
YWW
BG
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
http://onsemi.com
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2
SCHOTTKY DIODE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage V 20 V
Average Forward Current (Rated VR, TA = 100°C) IO1.0 A
Peak Repetitive Forward Current (Note 3) IFRM 2.0 A
Non−Repetitive Peak Surge Current (Note 4) IFSM 20 A
THERMAL RESISTANCE RATINGS
FET Schottky
Rating Symbol Max Unit
Junction−to−Ambient – Steady State (Note 5) RθJA 88 135 °C/W
Junction−to−Ambient – Steady State (Note 6) RθJA 160 250 °C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V −20 − − V
Zero Gate Voltage Drain Current (Note 7) IDSS VGS = 0 V, VDS = −16 V − − −1.0 A
VGS = 0 V, TJ = 125°C, VDS = −16 V − − −25
Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = ±10 V − − ±100 nA
ON CHARACTERISTICS
Gate Threshold Voltage VGS(TH) VGS = VDS, ID = −250 A −0.5 − −1.5 V
Negative Threshold Temperature
Coefficient VGS(TH)/TJ− − 2.5 − mV/°C
Drain−to−Source On Resistance RDS(on) VGS = −4.5 V, ID = −3.3 A − 70 90 m
()
VGS = −2.5 V, ID = −1.2 A − 100 150
Forward Transconductance gFS VDS = −10 V, ID = −2.7 A − 4.2 − S
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance CISS
V0Vf 10MH
− 550 750 pF
Output Capacitance COSS VGS = 0 V, f = 1.0 MHz,
V
DS
= −16 V − 200 300
Reverse Transfer Capacitance CRSS
VDS
=
−
16
V
− 50 175
Total Gate Charge QG(TOT)
V45VV 16 V
− 10 18 nC
Gate−to−Source Gate Charge QGS VGS = −4.5 V, VDS = −16 V,
I
D
= −3.3 A − 1.5 3.0
Gate−to−Drain “Miller’’ Charge QGD
ID
=
−
3
.
3
A
− 5.0 10
SWITCHING CHARACTERISTICS
T urn−On Delay Time td(ON) −11 20 ns
Rise Time trV
GS
= −4.5 V, V
DD
= −10 V, − 35 65
Turn−Off Delay Time td(OFF)
VGS
=
−4
.
5
V
,
VDD
=
−10
V
,
ID = −3.3 A, RG = 6.0 − 33 60
Fall Time tf− 29 55
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage VSD VGS = 0 V, IS = −2.0 A − −0.88 −1.0 V
Reverse Recovery Time tRR
V0Vd /dt 100 A/
− 37 50 ns
Charge Time taVGS = 0 V, dIS/dt = 100 A/s,
I
S
= −3.3 A − 16 −
Discharge Time tb
IS
=
−
3
.
3
A
− 21 −
Reverse Recovery Charge QRR − − 0.025 0.05 nC
3. Rated VR, square wave, 20 kHz, TA = 105°C.
4. Surge applied at rated load conditions, half−wave, single phase, 60 Hz.
5. Surface−mounted on FR4 board using 1 inch sq pad size (Cu area = 1.127 in sq [1 oz] including traces).
6. Surface−mounted on FR4 board using the minimum recommended pad size (Cu area = 0.172 in sq).
7. Body diode leakage current.
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SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic Symbol Test Condition Min Typ Max Unit
Reverse Breakdown Voltage BVIR = 1.0 mA 20 − − V
Reverse Leakage Current IR
TA = 25°C − − 0.05 mA
VR = 20 V TA = 125°C − − 10
Forward Voltage VF
TA = 25°C − − 0.5 V
IF = 1.0 A TA = 125°C − − 0.39
TA = 25°C − − 0.6
IF = 2.0 A TA = 125°C − − 0.53
Voltage Rate of Change dV/dt VR = 20 V − 10,000 − V/s
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4
TYPICAL ELECTRICAL CHARACTERISTICS
VGS = −1.5 V
VGS = −1.7 V
VGS = −1.9 V
TJ = 55°C
TJ = 25°C
VGS = −10 V
VGS = −4.5 V
VGS = −2.5 V
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
Figure 3. On−Resistance vs. Gate−to−Source
Voltage Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
Figure 5. On−Resistance Variation with
Temperature Figure 6. Drain−to−Source Leakage Current
vs. Voltage
VGS = −2.1 V TJ = 25°C
TJ = 100°C
TJ = 25°CTJ = 25°C
VGS = −2.7 V
VGS = −4.5 V
ID = −3.3 A
VGS = −4.5 V VGS = 0 V TJ = 125°C
TJ = 25°C
TJ = 100°C
VDS > = −10 V
150−50
1.6
1.4
−25 0 25 75
1.2
1
0.8
0.6 200
1000
100
4 8 12 16
10
1
0.1
0.01
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
12510050
TJ, JUNCTION TEMPERATURE (°C)
1
0.12
0.1
1.5 2 2.5 3.5
0.08
0.06
0.04 4.5432
0.2
0.15
46
0.1
0.05
08
1
5
4
1.5 2
3
2
030
4
3
6
2
1
08
1
2.54210
−ID, DRAIN CURRENT (AMPS)
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) −VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
−ID, DRAIN CURRENT (AMPS)
−ID, DRAIN CURRENT (AMPS)RDS(on), DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
−IDSS, LEAKAGE (nA)
RDS(on), DRAIN−TO−SOURCE RESISTANCE ()
RDS(on), DRAIN−TO−SOURCE RESISTANCE ()
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TYPICAL ELECTRICAL CHARACTERISTICS
tr
t, TIME (ns)
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
td (off)
td (off)
Figure 7. Capacitance Variation Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance Figure 10. Resistive Switching Time Variation
vs. Gate Resistance
Figure 11. Diode Forward Voltage
vs. Current
Figure 12. Diode Reverse Recovery Waveform
VDS = 0 V VGS = 0 V
TJ = 25°C
Ciss
Crss
Coss
Ciss
Crss
VDD = −10 V
ID = −1.2 A
VGS = −2.7 V
tf
td (on)
trtf
VGS = 0 V
TJ = 25°Cdi/dt
trr
ta
tp
IS
0.25 IS
TIME
IS
tb
1
00.90.80.70.60.50.4
0.4
0.8
1.2
1.6
2
−VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
1.0 100101.0
10
100
10 10010
1.0
100
1000
RG, GATE RESISTANCE ()
2010
1500
1200
5051015
900
600
300
0
RG, GATE RESISTANCE ()
t, TIME (ns)
−IS, SOURCE CURRENT (AMPS)
VDD = −10 V
ID = −3.3 A
VGS = −4.5 V
td (on)
C, CAPACITANCE (pF)
−VDS
−VGS
−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
QT
Q2
Q1 VGS
ID = −3.3 A
TJ = 25°C
VDS
080
3
5
1
2
4
246 10 14
Qg, TOTAL GATE CHARGE (nC)
20
18
16
14
12
10
8
6
4
2
0
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
12
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Figure 13. FET Thermal Response
0.1 Normalized to R∅ja at Steady State (1 inch pad)
0.0125 Ω0.0563 Ω0.110 Ω0.273 Ω0.113 Ω0.436 Ω
0.021 F 0.137 F 1.15 F 2.93 F 152 F 261 F
0.01
0.02
0.05
0.2
Single Pulse
D = 0.5
Rthja(t), EFFECTIVE TRANSIENT THERMAL RESPONSE
t, TIME (s)
1E−03 1E−02 1E−01 1E+00 1E+03 1E+02 1E+03
1
0.1
0.01
TYPICAL SCHOTTKY ELECTRICAL CHARACTERISTICS
TJ = 125°C
Figure 14. Typical Forward Voltage Figure 15. Maximum Forward Voltage
0.7 1.00.1
VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
10
1.0
VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
1.40
1.0
0.1
IF, INSTANTANEOUS FORWARD CURRENT (AMPS)
0.1
0.40.2 0.3 0.5 0.6 0.8 0.9 0.2 0.4 0.6 0.8
10
IF, INSTANTANEOUS FORWARD CURRENT (AMPS)
1.0 1.2
85°C 25°C
−40 °C
TJ = 125°C
25°C
85°C
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TYPICAL SCHOTTKY ELECTRICAL CHARACTERISTICS
Figure 16. Typical Reverse Current Figure 17. Maximum Reverse Current
Figure 18. Typical Capacitance Figure 19. Current Derating
Figure 20. Forward Power Dissipation
15 200
VR, REVERSE VOLTAGE (VOLTS)
1E−2
1E−4
1E−3
1E−5
15 200
VR, REVERSE VOLTAGE (VOLTS)
1000
100
10
TA, AMBIENT TEMPERATURE (°C)
200
1.6
0.8
0.6
0.4
0.2
0
40
0
IO, AVERAGE FORWARD CURRENT (AMPS)
0.5
0.4
0.3
0.2
0.1
0
0.5
IR, REVERSE CURRENT (AMPS)
1E−6
1E−7
5.0 10
5.0 10 60 80 100 120 140 160
, AVERAGE POWER DISSIPATION (WATTS)PFO
1.0 1.5
C, CAPACITANCE (pF)
I , AVERAGE FORWARD CURRENT (AMPS)
O
2.0
0.6
0.7
15 200
VR, REVERSE VOLTAGE (VOLTS)
1E−1
1E−3
1E−2
1E−4
IR, MAXIMUM REVERSE CURRENT (AMPS)
1E−5
1E−6
5.0 10
1.0
1.2
1.4
SQUARE
WAVE
dc
Ipk/Io = 5.0
Ipk/Io =
Ipk/Io = 10
Ipk/Io = 20
TYPICAL CAPACITANCE AT 0 V = 170 pF
TJ = 125°C
25°C
TJ = 125°C
25°C
85°C
FREQ = 20 kHz
dc
SQUARE WAVE
Ipk/Io = 5.0
Ipk/Io =
Ipk/Io = 10
Ipk/Io = 20
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8
PACKAGE DIMENSIONS
Micro8
CASE 846A−02
ISSUE F
S
B
M
0.08 (0.003) A S
TDIM MIN MAX MIN MAX
INCHESMILLIMETERS
A2.90 3.10 0.114 0.122
B2.90 3.10 0.114 0.122
C−−− 1.10 −−− 0.043
D0.25 0.40 0.010 0.016
G0.65 BSC 0.026 BSC
H0.05 0.15 0.002 0.006
J0.13 0.23 0.005 0.009
K4.75 5.05 0.187 0.199
L0.40 0.70 0.016 0.028
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A DOES NOT INCLUDE MOLD FLASH,
PROTRUSIONS OR GATE BURRS. MOLD FLASH,
PROTRUSIONS OR GATE BURRS SHALL NOT
EXCEED 0.15 (0.006) PER SIDE.
4. DIMENSION B DOES NOT INCLUDE INTERLEAD
FLASH OR PROTRUSION. INTERLEAD FLASH OR
PROTRUSION SHALL NOT EXCEED 0.25 (0.010)
PER SIDE.
5. 846A−01 OBSOLETE, NEW STANDARD 846A−02.
−B−
−A−
D
K
G
PIN 1 ID
8 PL
0.038 (0.0015)
−T− SEATING
PLANE
C
HJL
8X 8X
6X mm
inches
SCALE 8:1
1.04
0.041 0.38
0.015
5.28
0.208
4.24
0.167
3.20
0.126
0.65
0.0256
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
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to any products herein. SCILLC makes no warranty , representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
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PUBLICATION ORDERING INFORMATION
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2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051
Phone: 81−3−5773−3850
NTTD4401F/D
FETKY is a trademark of International Rectifier Corporation.
Micro8 is a trademark of International Rectifier.
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