OL DE 3875081 oo17aen 3 3875081 GE SOLID STATE DiE 17361 D Te 33-/3 General-Purpose Power Transistors File Number 528 2N3442, 2N4347, 2N6262 High-Voltage Silicon N-P-N Transistors High-Power Devices for Applications in Industrial and Commercial Equipment Features: @ Low Saturation voltages & High dissipation capability 100 W (2N4347) TERMINAL DESIGNATIONS c (FLANGE) 117 W (2N3442) 8208-27816 150 W (2N6262) @ Maximum area-ol-operation curves for dc and JEDEC TO-204AA pulse operation RCA-2N3442, 2N4347, and 2N6262 are silicon n-p-n transis- tors intended for a wide variety of high-power, high-voltage applications. Typical applications for these transistors in- clude power-switching circuits, audio amplifiers, series- and shunt-- >gulator driver and output stages, dc-to-de conver- ters, and solanoid (hammer)/relay driver service. These devices employ the popular JEDEC TO-204AA pack- age; they differ in maximum ratings for voltage, current, and power. MAXIMUM RATINGS, Absolute-Maximum Values: 2N4347 2N3442 2N6262 Veg cect cece eset cree enc eeeesperenterevenereeeucucars 140 160 170 v NGEO cere eer teen teen reer e seen teresneetesneeeucnenns 120 140 150 Vv Voex (Vag = nLOV) coe c eee e ccc ec ce sever seneerenre 140 160 170 Vv VEBO crete nett e teeter ste tees seeeeuy seus ten eeeneraess 7 7 7 Vv le COMINUOUS Loe. cece ccc c ese recs ten even veesecutarenes 5 10 10 A PERK Loci cs cc cn cece serene eet eeteneetuseeeretenecuas 70 15 15 A "Te Continuous 3 7 7 A PEAK Loic cece eect een eet eeetn een seneeseeseeee 8 _ - A PY - ALT UP tO 25C occ ccc ec ete eee eeneeceneenee 100 117 150 Ww At Tc above 25C . oo c eee ce cect ee enc veseuvucveusunes _--_______ See Figs. 1,2,3, & 4 "Ty Tetg cc eee cece eee ene e ence enna ee teeeteetevreerenee __~___--_. -68 to +200 C T, (During Soldering): At distances > 1/32 in. (0.8 mm) from case for 105 max, ......00ee Cece eae aaron enreens 235 C In accordance with JEDEC registration data format (JS-6, RDF-2). 365 Ol DE Bse7soa1 OO?abe I 3875081 GE SOLID STATE DiE 17362 dD TeS3S-(3 . General-Purpose Power Transistors : io PN3442, 2N4347, 2N6262 ELECTRICAL CHARACTERISTICS, At Case Temperature (Tc) = 25C unless otherwise specified TEST CONDITIONS LIMITS VOLTAGE | CURRENT] . CHARACTERISTIC | Vy ae Ade | 24347 | 2naaa2 | 2neze2 | UNITS Vce|Vee} fo | Ip | Min.| Max.] Min.| Max.| Min.| Max. Iopo te =0 _~| |e 4 Vog = 140 V \ Hy mA * lcex 120 |-1.5 - 2) - = - - 140 |-1.5 ~|-}-] s]-] - A 140 |-1.5 -|-/-] 1J-y};-| 150 |-1.5 -~|-/[-}]-/- [01 | To =150C 125 |-1.5 -| twj-~|]-]-j- 140 |1.5 -| - | =| 30} ] - A 140 }-1.5 -!|-};f-]wol/-/|-|" 150 |-1.5 ~|-]-{- ]- 2 * I IcEO 100 | 200; -} -]-] - 110 -|-j-]J-J]- 1} ma 140 ~| | }200] | - * leno 7 0 _- 5 - 5 - 0.2 mA 2 3a ~|-|-]- | 20] 70 2 10a ~|-]- |S] s]- 4 2a 1t goi -} - |---|] - * hFE 4 3a | - | 20] 70} - | - 4 ga wy -]|-[-]-]- 4 10a -~-|-| 4}/-};-]- 1.5/0.1 140| |igeo] - | - | - Vocevisus) -1.510.2 -|-|-|- {170} - Vv Voertsus) 0.1 130}; -j;-{[-]-]- Vv (Rag) = 1002 0.2 | |iso} - |ieo} - o24| olizoj| |iao]- | | * |Vceolsus) 02a} of |-|- |- |rso}- | 2 3a ~j)-[-]J- f- 1 4 3a ~}|- f-ta7zt- ]- * Vee 4 2a ~ 2] - - _ - Vv 4 ga -| 3/-J-]- ]- 4 108 -|-|- jis7{-[- 23| 0.2 | - 1}J-j-)- ]- g{oa}-]|-[-] 1]- ]os * Vee lsat) saloss3}~} 2}-]/-|- }- ]| ya} 2}-]-]-~ 4] 5/- J] - 67 15 1/- j-]- ]- [- . len 78 1.6 -|- 1/- |- {- |.s 100 1.5 ~-|/-~]J-]-4d4]- * Ingel b f = 50 kHz 4 0.5 a4}-]f-]-]-]- f = 40 kHz 4 1 ~|J- |-}{- | 2]- 4 ~4- | 2]- [- }- * Inte 4 0.5 4ao}- |- }- |- ]- f= 1kHz 4 1 ~f- }-]- Jwofe 4 2 ~ |- Jt je f- Rec {175 } |16 | f17 [ecw * In accordance with JEDEC registration data format JS-6 ROF-2 3 Pulse test; pulse duration = 300 us, rep. rate = 60 Hz 366 oO 3675081 GE SOUT OL de 3875082 cowaca 7 D STATE _ O1 17363 ob T33-I3 General-Purpose Power Transistors 2N3442, 2N4347, 2N6262 TEMPERATURE (Te }> 85C (CURVES MUST Of LINEARLY WITH INCREASE iW TEMPERATURE) COLLECTOR CURRENT (Io) A t oe m t z w z > oO ti 3 - oe w J a 4 4 "0 z 4 * I00 200 COLLECTOR - TO~EMITTER VGLTAGE Vogl -v 0293-300 Fig. 1 Maximum operating areas for type 2N3442. '{ CASE TEMPERATURE (Tc }* 25C {CURVES MUST BE OERATEO LINEARLY WITH INCREASE IN TEMPERATURE.) POSTE yey FOR SINGLE NONREPETITIVE reesiecioe 1b: SESPCCPERR SEED NORMALIZED MAX. 1I50V MULTIPLIER I 2 4 6 3 10 2 4 6 100 2 COLLECTOR ~TO-EMITTER VOLTAGE (oglv 928-19566 Fig, 2 Maximum operating areas for type 2N6262. Mf 367 nae ode 3875081 oo173b4 4 [ 7 3875081 GE SOLID STATE General-Purpose Power Transistors DIE 17364. D I S> 13 '2N3442, 2N4347, 2N6262 0 GASE TEMPERATURE (Tg}=26C (CURVES WUGT BE GERATED LINEARLY WITH INCREASE W TEMPERATURE) | | Ol t fo COLLECTOR TO-EMITTER VOLTAGE Wopl- 00 200 9253-3211 Fig. 3 ~- Maximum oparating areas for type 2N4347. a 150 CASE TEMPERATURE (1c) 4c 75 200 AILS -tegge Fig. 4 Current derating curve for ail types. TO-EMTTER N DG FORWARD-CURRENT TRANSFER RATIO (hcg) a ! COLLEGTOA CUARENT [t]-a 9285-32265 Fig. 6 Typical de beta characteristics for type 2N4347, COLLECTOM -TO-EWITTER YOLTASE OC FORWAAD-CURMENT TRANSFER RATIO {arg om ar COLLECTOR CURRENT iIc]a 253-3230 Fig. Typical de beta characteristics for type 2N3442, o % % 2, % \% lod es N OC FORWARD-CURRENT TRANSFER RATIO (hee! ? 6a z oe 4 a ar ' COLLECTOR CURRENT Ifcl-a szcs-19865 0.01 to Fig. 7 Typical de bata characteristics for type 2N6262, Oi DE 3475081 OO?73b5 a yo 3875081 GE SOLID STATE. O1E 17365. p (+3 3/3 General-Purpose Fower Transistors 2N3442, 2N4347, 2N6262 COLLECTOR-TO-EMITTER VOLTAGE 2 9 < A ae o 8 i BASE CURRENT (Igl--a o4 06 oa 10 12 4 16 a2 oF o os Lo 12 ia BASE~TO-EMITTER VOLTAGE (YgelV apsseazs? BASE-TO-EMITTER VOLTAGE Mg} gag. spar Fig. 8 Typical input characteristics for Fig. 9 Typical input characteristics for type 2N3442, type 2N4347, COLLECTOR-TO-EhMMTTEA VOLTAGE (Yog]*4 COLLECTOR -TO-EMITTER VOLTAGE (Veg) * 4 9 * 2 4 i 2 8 e =z o a w a 2 a COLLECTOR CURRENT (Tp}a 6 o2 o Oo6 08 10 42 6 BASE-TO-EMUTTER VOLTAGE Wgagl~v 9208-19363 BASE-TO-EMITTER VOLTAGE Wav yess3228 Fig. 10 Typical input characteristics for Fig. 11 Typical transfer characteristics for type 2N6262. type 2N3442 and 2N4347, TOR CURRENT CURAENT (Ig) #10 VOLTAGE (cel 4 COLLECTOR C1 e oY e N a COLLECTOR CURRENT (Ip)A < | + = 6 g & s 3 8 3 8 COLLECTOR-TO-EMIT TER SATURATION VOLTAGE [icg (aati]Vv BASE -TO-EMITTER VOLTAGE (Vag) V 9208-19562 283-3220 Fig, 12 Typical transler characteristics for Fig. 13 Typical saturation-vollage characteristics type 2N6262. for all types. 369