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FDS6576 P-Channel 2.5V Specified PowerTrench MOSFET
2006 Fairchild Semiconductor Corporation FDS6576 Rev E3
FDS6576
P-Channel 2.5V Specified PowerTrench MOSFET
General Description
This P-Channel 2.5V specified MOSFET is in a rugged
gate version of Fairchild Semiconductor's advanced
PowerTrench®
®
process. It has been optimized for power
management applications with a wide range of gate
drive voltage (2.5V - 12V).
Applications
• Load switch
• Battery protection
•Power management
Features
–11 A, –20 V. RDS(ON) = 0.014 :@ VGS = –4.5 V
RDS(ON) = 0.020 :@ VGS = –2.5 V
• Extended VGSS range (r12V) for battery applications.
• Low gate charge (43nC typical).
• Fast switching speed.
• High performance trench technology for extremely
low RDS(ON).
•High power and current handling capability.
•RoHS Compliant.
S
D
S
S
SO-8
D
D
D
G
4
3
2
1
5
6
7
8
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol Parameter Ratings Units
VDSS Drain-Source Voltage –20 V
VGSS Gate-Source Voltage r 12 V
IDDrain Current – Continuous (Note 1a) –11 A
– Pulsed –50
Power Dissipation for Single Operation (Note 1a) 2.5
(Note 1b) 1.2
PD
(Note 1c) 1.0
W
TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 qC
Thermal Characteristics
RTJA Thermal Resistance, Junction-to-Ambient (Note 1a) 50 qC/W
RTJA Thermal Resistance, Junction-to-Ambient (Note 1c) 125 qC/W
RTJC Thermal Resistance, Junction-to-Case (Note 1) 25 qC/W
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
FDS6576 FDS6576 13’’ 12mm 2500 units
tm
December 2006
FDS6576 P-Channel 2.5V Specified PowerTrench
MOSFET
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = –250 PA–20 V
'BVDSS
'TJ
Breakdown Voltage Temperature
Coefficient ID = –250 PA, Referenced to 25qC–13 mV/qC
IDSS Zero Gate Voltage Drain Current VDS = –16 V, VGS = 0 V –1 PA
IGSSF Gate–Body Leakage, Forward VGS = 12 V, VDS = 0 V 100 nA
IGSSR Gate–Body Leakage, Reverse VGS = –12 V, VDS = 0 V –100 nA
On Characteristics (Note 2)
VGS(th) Gate Threshold Voltage VDS = VGS, ID = –250 PA–0.6 –0.83 –1.5 V
'VGS(th)
'TJ
Gate Threshold Voltage
Temperature Coefficient
ID = –250 PA, Referenced to 25qC3.5 mV/qC
RDS(on) Static Drain–Source
On–Resistance
VGS = –4.5 V, ID = –11 A
VGS = –2.5 V, ID = –8.8 A
VGS = –4.5 V, ID = –11 A, TJ=125qC
8.2
11.5
11.1
14
20
23
m:
ID(on) On–State Drain Current VGS = –4.5 V, VDS = –5 V –25 A
gFS Forward Transconductance VDS = –4.5 V, ID = –11 A 50 S
Dynamic Characteristics
Ciss Input Capacitance 4044 pF
Coss Output Capacitance 955 pF
Crss
VDS = –10 V, V GS = 0 V,
f = 1.0 MHz
504Reverse Transfer Capacitance pF
Switching Characteristics (Note 2)
td(on) Turn–On Delay Time 18 32 ns
trTurn–On Rise Time 17 31 ns
td(off) Turn–Off Delay Time 124 198 ns
tfTurn–Off Fall Time
VDD = –10 V, ID = –1 A,
VGS = –4.5 V, RGEN = 6 :
79 126 ns
QgTotal Gate Charge 43 60 nC
Qgs Gate–Source Charge 7 nC
Qgd Gate–Drain Charge
VDS = –10 V, ID = –11 A,
VGS = –4.5 V
12 nC
Drain–Source Diode Characteristics and Maximum Ratings
ISMaximum Continuous Drain–Source Diode Forward Current –2.1 A
VSD
Drain–Source Diode Forward
Voltage VGS = 0 V, IS = –2.1 A (Note 2) –0.66 –1.2 V
Notes:
1. RTJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RTJC is guaranteed by design while RTCA is determined by the user's board design.
a) 50°C/W when
mounted on a 1in2
pad of 2 oz copper
b) 105°C/W when
mounted on a .04 in2
pad of 2 oz copper
c) 125°C/W when mounted
on a minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300Ps, Duty Cycle < 2.0%
FDS6576 Rev E3
Typical Characteristics
0
10
20
30
40
50
0 0.5 1 1.5 2 2.5
VDS, DRAIN-SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
3.0V
4.5V
2.5V
3.5V
VGS = 10V
6.0V
0.75
1
1.25
1.5
1.75
2
2.25
0 1020304050
ID, DRAIN CURRENT (A)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
VGS = 3.0V
3.5V
4.5V
6.0V
10V
Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.6
0.8
1
1.2
1.4
1.6
1.8
-50 - 125 150
TJ, JUNCTION TEMPERATURE (oC)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
25 0 25 50 75 100
ID = 12A
VGS = 10V
0.005
0.01
0.015
0.02
0.025
0.03
10
VGS, GATE TO SOURCE VOLTAGE (V)
RDS(ON), ON-RESISTANCE (OHM)
FDS6576 P-Channel 2.5V Specified PowerTrench
MOSFET
ID = 6 A
TA = 125oC
TA = 25oC
2468
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
10
20
30
40
50
1.5 2 2.5 3 3.5
VGS, GATE TO SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
0.0001
0.001
0.01
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1 1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
IS, REVERSE DRAIN CURRENT (A)
VGS = 0V
TA = -55oC25oC
VDS = 5V
125oC
TA= 125oC
25oC
-55oC
Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS6576 Rev E3
FDS6576 Rev E3
FDS6576 P-Channel 2.5V S
p
ecified PowerTrench
MOSFET
Typical Characteristics
0
2
4
6
8
10
0 5 10 15 20 25 30 35
Qg, GATE CHARGE (nC)
VGS, GATE-SOURCE VOLTAGE (V)
0
500
1000
1500
2000
2500
3000
0 5 10 15 20 25 30
VDS, DRAIN TO SOURCE VOLTAGE (V)
CAPACITANCE (pF)
ID = 12A VDS = 10V f = 1MHz
VGS = 0 V
20V
15V
CISS
COSS
CRSS
Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.
0.01
0.1
1
10
100
0.01 0.1 1 10 100
VDS, DRAIN-SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
0
10
20
30
40
50
0.001 0.01 0.1 1 10 100
t1, TIME (sec)
P(pk), PEAK TRANSIENT POWER (W)
100⼡SINGLE PULSE
RTJA = 125Ⱌ/W
TA = 25Ⱌ
RDS(ON) LIMIT
10ms
1ms
DC
10s1s
100ms
VGS = 10V
SINGLE PULSE
RTJA = 125oC/W
TA = 25oC
Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum
Power Dissipation.
0.001
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 100 1000
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
D = 0.5
RTJA(t) = r(t) + RTJA
RTJA = 125 Ⱌ/W
TJ - TA = P * RTJA(t)
Duty Cycle, D = t1/ t2
0.2
0.1
10
P(pk)
t1
t2
0.05
SINGLE PULSE
0.01
0.02
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS
HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE
APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS
PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S
WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS
WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body, or
(b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
ACEx™
ActiveArray™
Bottomless™
Build it Now™
CoolFET™
CROSSVOLT™
DOME™
EcoSPARK™
E2CMOS™
EnSigna™
FACT®
FAST®
FASTr™
FPS™
FRFET™
FACT Quiet Series™
GlobalOptoisolator™
GTO™
HiSeC™
I2C™
i-Lo™
ImpliedDisconnect™
IntelliMAX™
ISOPLANAR™
LittleFET™
MICROCOUPLER™
MicroFET™
MicroPak™
MICROWIRE™
MSX™
MSXPro™
OCX™
OCXPro™
OPTOLOGIC®
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerEdge™
PowerSaver™
PowerTrench®
QFET®
QS™
QT Optoelectronics™
Quiet Series™
RapidConfigure™
RapidConnect™
μSerDes™
ScalarPump™
SILENT SWITCHER®
SMART START™
SPM™
Stealth™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TCM™
TinyBoost™
TinyBuck™
TinyPWM™
TinyPower™
TinyLogic®
TINYOPTO™
TruTranslation™
UHC®
UniFET™
VCX™
Wire™
Across the board. Around the world.™
The Power Franchise®
Programmable Active Droop™
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary First Production This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete Not In Production This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I22
FDS6576 Rev E3
www.onsemi.com
1
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