To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Renesas Technology Home Page: http://www.renesas.com Renesas Technology Corp. Customer Support Dept. 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Please contact Renesas Technology Corporation for further details on these materials or the products contained therein. 2SC4900 Silicon NPN Epitaxial Application VHF / UHF wide band amplifier Features * High gain bandwidth product fT = 9 GHz Typ * High gain, low noise figure PG = 13.0 dB Typ, NF = 1.2 dB Typ at f = 900 MHz Outline MPAK-4 2 3 1 4 1. Collector 2. Emitter 3. Base 4. Emitter 2SC4900 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage VCBO 15 V Collector to emitter voltage VCEO 9 V Emitter to base voltage VEBO 1.5 V Collector current IC 50 mA Collector power dissipation PC 150 mW Junction temperature Tj 150 C Storage temperature Tstg -55 to +150 C Electrical Characteristics (Ta = 25C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown voltage V(BR)CBO 15 -- -- V I C = 10 A, IE = 0 Collector cutoff current I CBO -- -- 10 A VCB = 12 V, IE = 0 I CEO -- -- 1 mA VCE = 9 V, RBE = Emitter cutoff current I EBO -- -- 10 A VEB = 1.5 V, IC = 0 DC current transfer ratio hFE 50 120 250 Collector output capacitance Cob -- 0.8 1.3 pF VCB = 5 V, IE = 0, f = 1 MHz Gain bandwidth product fT 6.0 9.0 -- GHz VCE = 5 V, IC = 20 mA Power gain PG 10.5 13.5 -- dB VCE = 5 V, IC = 20 mA, f = 900 MHz Noise figure NF -- 1.2 2.5 dB VCE = 5 V, IC = 5 mA, f = 900 MHz Note: Marking is "YJ-". 2 VCE = 5 V, IC = 20 mA 2SC4900 DC Current Transfer Ratio vs. Collector Current 200 DC Current Transfer Ratio h FE Collector Power Dissipation PC (mW) Maximum Collector Dissipation Curve 150 VCE = 5V 160 120 100 50 0 50 100 Ambient Temperature Ta (C) 80 40 0 0.1 0.2 150 Collector Output Capacitance Cob (pF) Gain Bandwidth Product f T (GHz) 12 VCE = 5 V 10 8 6 4 2 0 2 5 10 20 Collector Current I C (mA) 50 Collector Output Capacitance vs. Collector to Base Voltage Gain Bandwidth Product vs. Collector Current 1 0.5 1 2 5 10 20 Collector Current I C (mA) 50 1.6 IE = 0 f = 1 MHz 1.4 1.2 1.0 0.8 0.6 0.5 1 2 5 10 20 Collector to Base Voltage V CB (V) 3 2SC4900 Power Gain vs. Collector Current Noise Figure vs. Collector Current 20 5 VCE = 5V f = 900MHz VCE = 5V f = 900 MHz NF (dB) Power Gain PG (dB) 16 Noise Figure 12 8 4 0 4 3 2 1 0 1 2 5 10 20 Collector Current I C (mA) 50 1 5 10 20 2 Collector Current I C (mA) S21 Parameter vs. Collector Current 20 |S21 | (dB) VCE = 5V f = 1 GHz 16 S 21 Parameter 12 8 4 0 1 4 2 5 10 20 Collector Current I C (mA) 50 50 2SC4900 S21 Parameter vs. Frequency S11 Parameter vs. Frequency .6 .8 1 Scale: 4 / div. 90 1.5 120 2 .4 60 3 150 4 5 .2 30 10 .2 0 .4 .6 1.0 1.5 2 10 3 45 0 180 -10 -5 -4 -3 -.2 -.4 -30 -150 -2 -.6 -.8 -1 -90 Condition: VCE = 5 V , Zo = 50 200 to 2000 MHz (200 MHz step) Condition: VCE = 5 V , Zo = 50 200 to 2000 MHz (200 MHz step) (I C = 5 mA) (I C = 20 mA) (I C = 5 mA) (I C = 20 mA) S12 Parameter vs. Frequency 90 120 -60 -120 -1.5 S22 Parameter vs. Frequency Scale: 0.1 / div. .8 .6 60 1 1.5 2 .4 150 30 3 4 5 .2 10 0 180 .2 0 .4 .6 .8 1.0 1.5 2 3 45 10 -10 -5 -4 -3 -.2 -30 -150 -.4 -120 -60 -90 Condition: VCE = 5 V , Zo = 50 200 to 2000 MHz (200 MHz step) (I C = 5 mA) (I C = 20 mA) -2 -.6 -.8 -1 -1.5 Condition: VCE = 5 V , Zo = 50 200 to 2000 MHz (200 MHz step) (I C = 5 mA) (I C = 20 mA) 5 2SC4900 S Parameter (VCE = 5 V, IC = 5 mA, ZO = 50 , Emitter Common) Freq. S11 S21 S12 S22 (MHz) MAG. ANG. MAG. ANG. MAG. ANG. MAG. ANG. 200 0.678 -67.0 11.09 134.6 0.0572 59.2 0.772 -34.7 400 0.523 -107.6 7.49 111.6 0.0802 48.8 0.556 -47.8 600 0.453 -135.8 5.43 98.3 0.0933 47.1 0.443 -53.7 800 0.423 -155.2 4.24 89.0 0.105 47.8 0.382 -57.2 1000 0.407 -172.1 3.47 81.6 0.118 49.7 0.348 -60.2 1200 0.412 174.7 2.94 75.0 0.130 50.7 0.330 -62.9 1400 0.414 163.5 2.54 69.2 0.145 51.9 0.318 -66.5 1600 0.423 152.3 2.26 64.3 0.158 52.7 0.312 -70.3 1800 0.438 143.2 2.05 59.2 0.174 53.3 0.307 -74.4 2000 0.446 135.7 1.87 55.0 0.189 53.4 0.305 -78.4 S Parameter (VCE = 5 V, IC = 20 mA, ZO = 50 , Emitter Common) Freq. S11 (MHz) MAG. ANG. MAG. ANG. MAG. ANG. MAG. ANG. 200 0.420 -110.3 17.91 115.5 0.0381 59.7 0.502 -54.1 400 0.362 -148.9 10.13 98.4 0.0572 62.2 0.311 -62.8 600 0.351 -170.5 6.94 89.2 0.0766 64.7 0.240 -66.1 800 0.352 175.2 5.29 82.9 0.0966 65.7 0.207 -69.1 1000 0.361 162.7 4.27 77.1 0.117 65.8 0.189 -71.6 1200 0.364 153.1 3.60 72.3 0.138 65.1 0.181 -75.1 1400 0.373 143.9 3.12 67.9 0.158 64.0 0.178 -79.3 1600 0.386 136.2 2.76 63.6 0.178 62.5 0.176 -83.3 1800 0.396 128.2 2.49 59.4 0.199 61.3 0.177 -87.5 2000 0.414 121.3 2.27 55.5 0.218 59.8 0.178 -91.9 6 S21 S12 S22 2SC4900 When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without Hitachi's permission. 3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the user's unit according to this document. 4. Circuitry and other examples described herein are meant merely to indicate the characteristics and performance of Hitachi's semiconductor products. Hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd. 6. MEDICAL APPLICATIONS: Hitachi's products are not authorized for use in MEDICAL APPLICATIONS without the written consent of the appropriate officer of Hitachi's sales company. Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi's products are requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL APPLICATIONS. Hitachi, Ltd. Semiconductor & IC Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 For further information write to: Hitachi America, Ltd. Semiconductor & IC Div. 2000 Sierra Point Parkway Brisbane, CA. 94005-1835 USA Tel: 415-589-8300 Fax: 415-583-4207 Hitachi Europe GmbH Electronic Components Group Continental Europe Dornacher Strae 3 D-85622 Feldkirchen Munchen Tel: 089-9 91 80-0 Fax: 089-9 29 30 00 Hitachi Europe Ltd. Electronic Components Div. Northern Europe Headquarters Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA United Kingdom Tel: 0628-585000 Fax: 0628-778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 0104 Tel: 535-2100 Fax: 535-1533 Hitachi Asia (Hong Kong) Ltd. Unit 706, North Tower, World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon Hong Kong Tel: 27359218 Fax: 27306071 7