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Renesas Technology Home Page: http://www.renesas.com
Renesas Technology Corp.
Customer Support Dept.
April 1, 2003
To all our customers
Cautions
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2SC4900
Silicon NPN Epitaxial
Application
VHF / UHF wide band amplifier
Features
High gain bandwidth product
fT = 9 GHz Typ
High gain, low noise figure
PG = 13.0 dB Typ, NF = 1.2 dB Typ at f = 900 MHz
Outline
1. Collector
2. Emitter
3. Base
4. Emitter
MPAK-4
1
4
3
2
2SC4900
2
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage VCBO 15 V
Collector to emitter voltage VCEO 9V
Emitter to base voltage VEBO 1.5 V
Collector current IC50 mA
Collector power dissipation PC150 mW
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to base breakdown
voltage V(BR)CBO 15——V I
C = 10 µA, IE = 0
Collector cutoff current ICBO ——10µAV
CB = 12 V, IE = 0
ICEO ——1 mAV
CE = 9 V, RBE =
Emitter cutoff current IEBO ——10µAV
EB = 1.5 V, IC = 0
DC current transfer ratio hFE 50 120 250 VCE = 5 V, IC = 20 mA
Collector output capacitance Cob 0.8 1.3 pF VCB = 5 V, IE = 0, f = 1 MHz
Gain bandwidth product fT6.0 9.0 GHz VCE = 5 V, IC = 20 mA
Power gain PG 10.5 13.5 dB VCE = 5 V, IC = 20 mA,
f = 900 MHz
Noise figure NF 1.2 2.5 dB VCE = 5 V, IC = 5 mA,
f = 900 MHz
Note: Marking is “YJ–”.
2SC4900
3
15010050
Ambient Temperature Ta (°C)
0
150
50
100
Maximum Collector Dissipation Curve
Collector Power Dissipation PC (mW)
200
160
120
80
40
0.1 Collector Current I (mA)
C
DC Current Transfer Ratio h
FE
0.2 0.5 1 2 5 10 20 50
V = 5V
CE
0
DC Current Transfer Ratio
vs. Collector Current
12
10
8
6
4
2
12 51020 50
Collector Current I (mA)
C
Gain Bandwidth Product f (GHz)
T
V = 5 V
CE
0
Gain Bandwidth Product
vs. Collector Current 1.6
1.4
1.2
1.0
0.8
12 51020
Collector Output Capacitance Cob (pF)
Collector to Base Voltage V (V)
CB
0.5
0.6
I = 0
f = 1 MHz
E
Collector Output Capacitance vs.
Collector to Base Voltage
2SC4900
4
20
16
12
8
4
12 51020
Collector Current I (mA) 50
Power Gain PG (dB)
C
V = 5V
f = 900 MHz
CE
0
Power Gain vs. Collector Current
5
4
3
2
1
1251020
Collector Current I (mA) 50
Noise Figure NF (dB)
C
0
V = 5V
f = 900MHz
CE
Noise Figure vs. Collector Current
20
16
12
8
4
12 51020
Collector Current I (mA) 50
S Parameter |S | (dB)
C
V = 5V
f = 1 GHz
CE
0
2121
S21 Parameter vs. Collector Current
2SC4900
5
.2 .4 .6 1.0 1.52 4
35
11.5 2
345
10
–10
–5
–4
–3
–2
–1.5
–1
–.8
–.6
–.4
–.2
0
.2
.4
.6 .8
10
Condition: V = 5 V , Zo = 50
200 to 2000 MHz (200 MHz step)
CE
(I = 5 mA)
(I = 20 mA)
C
C
S11 Parameter vs. Frequency
90°60°
120°
30°
0°
–30°
–60°
–90°
–120°
–150°
180°
150°
Scale: 4 / div.
Condition: V = 5 V , Zo = 50
200 to 2000 MHz (200 MHz step)
CE
(I = 5 mA)
(I = 20 mA)
C
C
S21 Parameter vs. Frequency
90°60°
30°
0°
–30°
–60°
–90°
–120°
–150°
180°
150°
120°Scale: 0.1 / div.
Condition: V = 5 V , Zo = 50
200 to 2000 MHz (200 MHz step)
CE
(I = 5 mA)
(I = 20 mA)
C
C
S12 Parameter vs. Frequency
.2 .4 .6 .8 1.0 1.5 2345
–10
–5
–4
–3
–2
–1.5
–1
–.8
–.6
–.4
–.2
0
.2
.4
.6 .8 11.5 2
345
10
10
Condition: V = 5 V , Zo = 50
200 to 2000 MHz (200 MHz step)
CE
(I = 5 mA)
(I = 20 mA)
C
C
S22 Parameter vs. Frequency
2SC4900
6
S Parameter (VCE = 5 V, IC = 5 mA, ZO = 50 Ω, Emitter Common)
Freq. S11 S21 S12 S22
(MHz) MAG. ANG. MAG. ANG. MAG. ANG. MAG. ANG.
200 0.678 –67.0 11.09 134.6 0.0572 59.2 0.772 –34.7
400 0.523 –107.6 7.49 111.6 0.0802 48.8 0.556 –47.8
600 0.453 –135.8 5.43 98.3 0.0933 47.1 0.443 –53.7
800 0.423 –155.2 4.24 89.0 0.105 47.8 0.382 –57.2
1000 0.407 –172.1 3.47 81.6 0.118 49.7 0.348 –60.2
1200 0.412 174.7 2.94 75.0 0.130 50.7 0.330 –62.9
1400 0.414 163.5 2.54 69.2 0.145 51.9 0.318 –66.5
1600 0.423 152.3 2.26 64.3 0.158 52.7 0.312 –70.3
1800 0.438 143.2 2.05 59.2 0.174 53.3 0.307 –74.4
2000 0.446 135.7 1.87 55.0 0.189 53.4 0.305 –78.4
S Parameter (VCE = 5 V, IC = 20 mA, ZO = 50 Ω, Emitter Common)
Freq. S11 S21 S12 S22
(MHz) MAG. ANG. MAG. ANG. MAG. ANG. MAG. ANG.
200 0.420 –110.3 17.91 115.5 0.0381 59.7 0.502 –54.1
400 0.362 –148.9 10.13 98.4 0.0572 62.2 0.311 –62.8
600 0.351 –170.5 6.94 89.2 0.0766 64.7 0.240 –66.1
800 0.352 175.2 5.29 82.9 0.0966 65.7 0.207 –69.1
1000 0.361 162.7 4.27 77.1 0.117 65.8 0.189 –71.6
1200 0.364 153.1 3.60 72.3 0.138 65.1 0.181 –75.1
1400 0.373 143.9 3.12 67.9 0.158 64.0 0.178 –79.3
1600 0.386 136.2 2.76 63.6 0.178 62.5 0.176 –83.3
1800 0.396 128.2 2.49 59.4 0.199 61.3 0.177 –87.5
2000 0.414 121.3 2.27 55.5 0.218 59.8 0.178 –91.9
2SC4900
7
When using this document, keep the following in mind:
1. This document may, wholly or partially, be subject to change without notice.
2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of
this document without Hitachi’s permission.
3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any
other reasons during operation of the user’s unit according to this document.
4. Circuitry and other examples described herein are meant merely to indicate the characteristics and
performance of Hitachi’s semiconductor products. Hitachi assumes no responsibility for any intellectual
property claims or other problems that may result from applications based on the examples described
herein.
5. No license is granted by implication or otherwise under any patents or other rights of any third party or
Hitachi, Ltd.
6. MEDICAL APPLICATIONS: Hitachi’s products are not authorized for use in MEDICAL
APPLICATIONS without the written consent of the appropriate officer of Hitachi’s sales company.
Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi’s products are
requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL
APPLICATIONS.
Hitachi, Ltd.
Semiconductor & IC Div.
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Tel: Tokyo (03) 3270-2111
Fax: (03) 3270-5109
For further information write to:
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Semiconductor & IC Div.
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U S A
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