STEMENS AKTIENGESELLSCHAF SIEMENS FEATURES * Radiant Intensity Selections SFH487P-1 2-4 SFH487P-2 >3.15 Perfect Spectrai Match with Siticon Photo Detector * Gallium Aluminum Arsenide Material * Low Cost * Ti Package Flat Plastic Lens Long-Term Stabllity Very Wide Beam, 130 * Very High Power, 20 mW Typical at 100 mA DESCRIPTION SFH 487P an infrared emutting diode, emits radiation in the near infrared range (880 nm peak). The emitted radiation, which can be modulated, is generated by forward flowing current. The device is enclosed in a 3 mmm diameter plastic package with a flat lens Typr- cal applications are in digital shaft encoders and light interruptors for DC and AC operation. H?E D Mi 8235605 0027399 & MBSIEG SFH 487P GaAlAs INFRARED EMITTER T-AI'B Package Dimensions in Inches (mm) Surface not Flat be oe 024 (06) 028 (07) 016 (0 4) 016 (0 4} Cathode 079 (20) L IN 067 (17) ~] [~ a Sak fee r= +s me toy Lol) S Chi i oie (o4 | (35) P Pasition wan 142 (3 6) 1 142 (29) 168 (4.3) 1063 (275 134 (3.8) Maximum Ratings Storage temperature Tag -5 to +100 C Soldering temperature at dip soldering (22 mm distance from the case bottom, soldering tim ts 5 sec) Toot 260 c Soldering temperature at iran soldering (22 mm distance fram the case bottom, soldering time 1=3 sec) Trog 300 C Junction temperature T, 100 iG} Reverse voltage Vr 5 v Forward current ip 100 mA Surge current (7 = 10 ps) lrg 25 A Power dissipation (T = 25C) Prot 200 mw Thermal registance* Rina 375 KAW Characteristics (T,,,) = 25C) Wavelength at peak emission at I; = 10 mA Apeak 880 nm Wavelength at peak emission at I; = 100 mA, toutse = 20 ms, Duty cycle = 1 12 Apeak 883 ram Wavelength at peak emission at Ip=1 A, louise = 100 ws, Duty cycle = 1 100 Apeak 886 nm Spectral bandwidth at |; = 10 mA A a0 nm Half angle ? +65 Deg Active chip area A 016 min Dimensions of active chip area Lx Ww O4x04 mm Distance chip surface to case surface 0 04ta07 mm Switching time (l, fram 10% to 90%, and from 90% to 10% lp =100 mA) te ty oG05 ys Capacitance (Vp = 0 V, f= 1 MHz} c, 25 pF Forward Voltage (I = 100 MA, t,y.55 = 20 ms} Ve 1.5 (318) v (Ip =1A, thuise = 100 ps} Ve 30(s53 8) Vv Breakdown voltage (Ip = 10 yA) Ver 30 (= 5) Vv Reverse current (V, =5 V) iy 00t (<1) yA Temperature coefficient of f, or #, TC -0.5 Yolk Temperature coefficient of V- Te -02 IK Temperature coefficient of Apeak To 025 nmkK Radiant Intensity |, In Axial Direction Measured at a Solid Angle of 2=0.01sr Group SFH 487P-1 SFH 487P-2 Radiant intensity Ip (Il; = 100 mA, Tp =20 ms) 2-4 2315 mWi/sr (lp=1 A. Tp = 100 ys} 25 35 mW ise Total Radiant Flux o, (Ip = 100 mA, Tp =20 ms) 21 23 mw STEMENS AKTIENGESELLSCHAF W7E D Relative spectral omission l= 10) % 1 Inet gg es 04 a2 9 750 #000 BSG 900 980 aA 1006 nm Maximum permissable forward current =F Tre) ma 5 75 2 40 40 so (tO Taw V, Forward voltage ws =fTae) F 4 25 50 TS 190 C + Tab Permissable Pulse Load =n Duty cycle D = Parameter mA 10 l Radiant intensity Radiant characteristics Ly =tley t 10 100 woo - I, wooo ms Forward current = 1,) o omy Womv Ww TOV + Vy Wavelength at peak emission | Radiant Intensity =1(T, (25) a nw MPEAK= (Tyg) 900 1h Apt |" as ne 2 o a SO Bs 00 a 2 so i) 100 + Tams Tate Forward current (max dependent upon the lead length from the package bottom to the ma PC board. 120 60 7-54 SFH 487P: Me 4235605 oOe7400 O MBSIEG FYHB infrared Emitters