AO3403 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO3403 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO3403 is Pb-free (meets ROHS & Sony 259 specifications). AO3403L is a Green Product ordering option. AO3403 and AO3403L are electrically identical. VDS (V) = -30V ID = -2.6 A (VGS = -10V) RDS(ON) < 130m (VGS = -10V) RDS(ON) < 180m (VGS = -4.5V) RDS(ON) < 260m (VGS = -2.5V) D TO-236 (SOT-23) Top View G D G S S Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A TA=25C Junction and Storage Temperature Range A Alpha & Omega Semiconductor, Ltd. W 1 TJ, TSTG t 10s Steady-State Steady-State A 1.4 C -55 to 150 Symbol A V -20 PD TA=70C Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient C Maximum Junction-to-Lead 12 -2.2 ID IDM TA=25C A Units V -2.6 TA=70C Pulsed Drain Current B Power Dissipation Maximum -30 RJA RJL Typ 70 100 63 Max 90 125 80 Units C/W C/W C/W AO3403 Electrical Characteristics (T J=25C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=-250A, VGS=0V -30 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=12V VGS(th) Gate Threshold Voltage VDS=VGS ID=-250A -0.6 ID(ON) On state drain current VGS=-4.5V, VDS=-5V -10 -5 Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time V A VGS=-4.5V, I D=-2A 128 180 m VGS=-2.5V, I D=-1A 187 260 m VDS=-5V, ID=-2.5A DYNAMIC PARAMETERS Ciss Input Capacitance Rg -1.4 130 IS=-1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current Crss nA 200 Forward Transconductance Output Capacitance 100 102 VSD Coss -1 A 154 TJ=125C gFS IS Units V TJ=55C VGS=-10V, ID=-2.6A Static Drain-Source On-Resistance Max -1 VDS=-24V, VGS=0V IDSS RDS(ON) Typ 3 4.5 -0.85 409 VGS=0V, VDS=-15V, f=1MHz S -1 V -2 A 500 pF 55 pF 42 VGS=0V, VDS=0V, f=1MHz VGS=-4.5V, VDS=-15V, ID=-2.5A pF 12 16 4.4 5.3 nC 0.8 nC 1.32 nC 5.3 8 4.4 9 ns 31.5 45 ns 8 16 ns 15.8 19 ns nC VGS=-10V, VDS=-15V, RL=6, RGEN=3 IF=-2.5A, dI/dt=100A/s 8 12 trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge IF=-2.5A, dI/dt=100A/s m ns A: The value of R JA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating. Rev 5: June 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AO3403 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 20 -5V -4.5V 8 -4V VGS=-3.5V 10 6 -ID(A) -ID (A) 15 25C VDS=-5V -10V -3V 125C 4 -2.5V 5 2 -2.0V 0 0 0 1 2 3 4 5 0 0.5 250 Normalized On-Resistance RDS(ON) (m) 1.5 2 2.5 3 3.5 4 1.6 VGS=-2.5V 200 150 VGS=-4.5V 100 VGS=-10V 50 0 1 2 3 4 5 VGS=-10V VGS=-4.5V 1.4 VGS=-2.5V 1.2 ID=-2A 1 0.8 6 0 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 300 1.0E+01 250 1.0E+00 ID=-2A 200 150 100 50 75 100 125 150 175 125C 1.0E-01 125C 50 25 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature -IS (A) RDS(ON) (m) 1 -VGS(Volts) Figure 2: Transfer Characteristics -VDS (Volts) Fig 1: On-Region Characteristics 1.0E-02 1.0E-03 25C 1.0E-04 25C 1.0E-05 0 0 2 4 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 1.0E-06 0.0 0.2 0.4 0.6 0.8 1.0 -VSD (Volts) Figure 6: Body-Diode Characteristics 1.2 AO3403 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 600 5 VDS=-15V ID=-2.5A 500 Capacitance (pF) -VGS (Volts) 4 3 2 1 Ciss 400 300 200 Coss 0 0 0 1 2 3 4 5 0 -Qg (nC) Figure 7: Gate-Charge Characteristics 100.0 TJ(Max)=150C TA=25C 10 15 20 25 30 20 TJ(Max)=150C TA=25C RDS(ON) limited 10.0 5 -VDS (Volts) Figure 8: Capacitance Characteristics 100s 15 10s Power (W) -ID (Amps) Crss 100 1ms 0.1s 10ms 1.0 10 5 1s 10s DC 0 0.001 0.1 0.1 1 10 100 Figure 9: Maximum Forward Biased Safe Operating Area (Note E) ZJA Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=90C/W 0.01 1 10 100 1000 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 0.01 0.00001 0.1 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) -VDS (Volts) PD Ton Single Pulse 0.001 0.0001 0.01 0.1 1 T 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 100 1000