Symbol
VDS
VGS
IDM
TJ, TSTG
Symbol Typ Max
70 90
100 125
RθJL 63 80
W
Maximum Junction-to-Lead CSteady-State °C/W
Thermal Characteristics
Parameter Units
Maximum Junction-to-Ambient
A
t ≤ 10s RθJA
°C/W
Maximum Junction-to-Ambient
A
Steady-State °C/W
±12Gate-Source Voltage
Drain-Source Voltage -30
Continuous Drain
Current A
Maximum UnitsParameter
TA=25°C
TA=70°C
Absolute Maximum Ratings TA=25°C unless otherwise noted
V
V
-2.2
-20
Pulsed Drain Current B
Power Dissipation A
TA=25°C
Junction and Storage Temperature Range
A
PD
°C
1.4
1
-55 to 150
TA=70°C
ID
-2.6
AO3403
P-Channel Enhancement Mode Field Effect Transistor
Features
VDS (V) = -30V
ID = -2.6 A (VGS = -10V)
RDS(ON) < 130mΩ (VGS = -10V)
RDS(ON) < 180mΩ (VGS = -4.5V)
RDS(ON) < 260mΩ (VGS = -2.5V)
General Description
The AO3403 uses advanced trench technology to
provide excellent RDS(ON) and low gate charge. This
device is suitable for use as a load switch or in PWM
applications. Standard Product AO3403 is Pb-free
(meets ROHS & Sony 259 specifications). AO3403L
is a Green Product ordering option. AO3403 and
AO3403L are electrically identical.
S
GD
TO-236
(SOT-23)
To
p
Vie
w
G
D
S
Alpha & Omega Semiconductor, Ltd.
AO3403
Symbol Min Typ Max Units
BVDSS -30 V
-1
TJ=55°C -5
IGSS ±100 nA
VGS(th) -0.6 -1 -1.4 V
ID(ON) -10 A
102 130
TJ=125°C 154 200
128 180 mΩ
187 260 mΩ
gFS 3 4.5 S
VSD -0.85 -1 V
IS-2 A
Ciss 409 500 pF
Coss 55 pF
Crss 42 pF
Rg12 16 Ω
Qg4.4 5.3 nC
Qgs 0.8 nC
Qgd 1.32 nC
tD(on) 5.3 8 ns
tr4.4 9 ns
tD(off) 31.5 45 ns
tf816ns
trr 15.8 19 ns
Qrr 812nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=-2.5A, dI/dt=100A/µs
Drain-Source Breakdown Voltage
On state drain current
ID=-250µA, VGS=0V
VGS=-2.5V, ID=-1A
VGS=-4.5V, VDS=-5V
VGS=-10V, ID=-2.6A
Reverse Transfer Capacitance
Electrical Characteristics (TJ=25°C unless otherwise noted)
STATIC PARAMETERS Parameter Conditions
IDSS µA
Gate Threshold Voltage VDS=VGS ID=-250µA
VDS=-24V, VGS=0V
VDS=0V, VGS=±12V
Zero Gate Voltage Drain Current
Gate-Body leakage current
RDS(ON) Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
mΩ
VGS=-4.5V, ID=-2A
IS=-1A,VGS=0V
VDS=-5V, ID=-2.5A
IF=-2.5A, dI/dt=100A/µs
VGS=0V, VDS=-15V, f=1MHz
SWITCHING PARAMETERS
Total Gate Charge
VGS=-4.5V, VDS=-15V, ID=-2.5A
Gate Source Charge
Gate Drain Charge
Turn-On Rise Time
Turn-Off DelayTime
VGS=-10V, VDS=-15V, RL=6Ω,
RGEN=3Ω
Gate resistance VGS=0V, VDS=0V, f=1MHz
Turn-Off Fall Time
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
A: The value of R
θJA is measured with the device mounted on 1in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A =25°C.
The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal
resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R
θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A=25°C. The
SOA curve provides a single pulse rating.
Rev 5: June 2005
Alpha & Omega Semiconductor, Ltd.
AO3403
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
5
10
15
20
012345
-VDS (Volts)
Fig 1: On-Region Characteristics
-ID (A)
VGS=-3.5V
-2.5V
-3V
-4.5V
-10V
0
2
4
6
8
10
0 0.5 1 1.5 2 2.5 3 3.5 4
-VGS(Volts)
Figure 2: Transfer Characteristics
-ID(A)
50
100
150
200
250
0123456
-ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
RDS(ON) (mΩ)
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
0.0 0.2 0.4 0.6 0.8 1.0 1.2
-VSD (Volts)
Figure 6: Body-Diode Characteristics
-IS (A)
25°C
125°C
0.8
1
1.2
1.4
1.6
0 25 50 75 100 125 150 175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
Normalized On-Resistance
VGS=-10V
VGS=-2.5V
0
50
100
150
200
250
300
0246810
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
RDS(ON) (mΩ)
25°C
125°C
VDS=-5V
VGS=-4.5V
V
GS
=-10V
ID=-2A
25°C
125°C
ID=-2A
-4V
VGS=-2.5V
VGS=-4.5V
-2.0V
-5V
Alpha & Omega Semiconductor, Ltd.
AO3403
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTIC
S
0
1
2
3
4
5
012345
-Qg (nC)
Figure 7: Gate-Charge Characteristics
-VGS (Volts)
0
100
200
300
400
500
600
0 5 10 15 20 25 30
-VDS (Volts)
Figure 8: Capacitance Characteristics
Capacitance (pF)
Ciss
0
5
10
15
20
0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Power (W)
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
ZθJA Normalized Transient
Thermal Resistance
Coss Cr
ss
0.1
1.0
10.0
100.0
0.1 1 10 100
-VDS (Volts)
-ID (Amps)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
100
µ
s
10ms
1ms
0
.1
s
1
10s
D
C
RDS(ON)
limited
TJ(Max)=150°C
TA=25°C
VDS=-15V
ID=-2.5A
Single Pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=90°C/W
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ(Max)=150°C
TA=25°C
10µs
Alpha & Omega Semiconductor, Ltd.