Schottky Barrier Diode
RB531XN
●Applications ●Dimensions (Unit : mm) ●Land size figure (Unit : mm)
Rectify small power
●Features
1)Small mold type.(UMD6)
2)Low VF
3)High reliability
●Construction
Silicon epitaxial
●Structure
●Taping specifications (Unit : mm)
●Absolute maximum ratings (Ta=25℃)
Symbol Unit
VRV
Io mA
IFSM A
Tj ℃
Tstg ℃
●Electical voltage (Ta=25℃)
Symbol Min. Typ. Max. Unit
VF1- - 0.30 V IF=10mA
VF2- - 0.43 V IF=100mA
Reverse current IR- - 20 µA VR=10V
Forward voltage surge peak (60Hz/1cyc)(*1) 1
100
Parameter Limits
Reverse voltage (DC)
Average rectified forward voltage
30
Junction temperature 125
Storage temperature -40 to +125
Parameter
Forward voltage
(*1) Rating of per diode
Conditions
UMD6
0.35
0.9
1.6
0.650.65
2.2±0.1 4.0±0.1
4.0±0.1 2.0±0.05 φ1.5±0.1
0
3.5±0.05 1.75±0.1
8.0±0.2
φ1.1±0.1
2.45±0.1
2.4±0.1
5.5±0.2
1.15±0.1
2.4±0.1
0.3±0.1
0～0.5
ROHM : UMD6
JEITA : SC-88
JEDEC : SOT-363
dot (year week factory)
2.0±0.2
2.1±0.1
1.25±0.1
0.25±
0.1
0.05
各リードとも
同寸法
(5)(6) (4)
1.3±0.1
0.65 0.65
(1) (3)(2)
0.15±0.05
0.9±0.1
0.7
0.1Min
0～0.1
Each lead has same dimension
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©2009 ROHM Co., Ltd. All rights reserved. 1/3 2009.02 - Rev.E
RB531XN Data Sheet
0.01
0.1
1
10
100
1000
10000
100000
0102030
Ta=125℃
Ta=75℃
Ta=25℃
Ta=-25℃
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
FORWARD CURRENT:IF(mA)
REVERSE CURRENT:IR(uA)
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
VF DISPERSION MAP
FORWARD VOLTAGE:VF(mV)
REVERSE CURRENT:VR(uA)
IR DISPERSION MAP
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
Ct DISPERSION MAP
IFSM DISPERSION MAP
PEAK SURGE
FORWARD CURRENT:IFSM(A)
PEAK SURGE
FORWARD CURRENT:IFSM(A)
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
PEAK SURGE
FORWARD CURRENT:IFSM(A)
TIME:t(ms)
IFSM-t CHARACTERISTICS
TIME:(s)
Rth-t CHARACTERISTICS
TRANSIENT
THAERMAL IMPEDANCE:Rth (℃/W)
FORWARD POWER
DISSIPATION:Pf(W)
AVERAGE RECTIFIED
FORWARD CURRENT：Io(A)
Io-Pｆ CHARACTERISTICS
REVERSE POWER
DISSIPATIONP
R
(w)
REVERSE VOLTAGE：VR(V)
VR-P
R
CHARACTERISTICS
0.001
0.01
0.1
1
10
100
1000
0 100 200 300 400 500
Ta=125℃
Ta=75℃
Ta=25℃
Ta=-25℃
0
5
10
15
20
25
30
35
40
45
50
Ta=25℃
VR=10V
n=30pcs
AVE:4.775uA
25
26
27
28
29
30
31
32
33
34
35
AVE:29.58pF
0
5
10
15
20
AVE:5.60A
8.3ms
Ifsm 1cyc
0
5
10
110100
0
5
10
110100
t
Ifsm
0
0.1
0.2
0.3
0102030
Sin(θ＝180)
D=1/2
DC
1
10
100
0 5 10 15 20
Ta=25℃
f=1MHz
VR=0V
n=10pcs
310
320
330
340
350
360
AVE:340.2mV
Ta=25℃
IF=100mA
n=30pcs
1
10
100
1000
0.001 0.1 10 1000
Rth(j-a)
Rth(j-c)
1ms
IM=1mA IF=10mA
300us
time
Mounted on epoxy board
f=1MHz
8.3ms
Ifsm
1cyc
8.3ms
0
0.1
0.2
0.3
0 0.1 0.2 0.3 0.4 0.5
0
0.1
0.2
0.3
0 0.1 0.2 0.3 0.4 0.5
Per chip
DC
Sin(θ＝180)
D=1/2
Per chip
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©2009 ROHM Co., Ltd. All rights reserved. 2/3 2009.02 - Rev.E
RB531XN Data Sheet
AMBIENT TEMPERATURE：Ta(℃)
Derating Curveﾞ
AVERAGE RECTIFIED
FORWARD CURRENT Io(A)
AVERAGE RECTIFIED
FORWARD CURRENT Io(A)
CASE TEMPARATURE：Tc(℃)
Derating Curve
0
0.1
0.2
0.3
0255075100125
TTj=125℃
D=t/T
tVR
Io
VR=15V
0A
0V
Sin(θ＝180)
D=1/2
DC
0
0.1
0.2
0.3
0 25 50 75 100 125
TTj=125℃
D=t/T
tVR
Io
VR=15V
0A
0V
Sin(θ＝180)
D=1/2
DC
Per chip
Per chip
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©2009 ROHM Co., Ltd. All rights reserved. 3/3 2009.02 - Rev.E
Appendix-Rev4.0
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Appendix
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The technical information specified herein is intended only to show the typical functions of and examples
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