IRLR8103VPBF - INTERNATIONAL RECTIFIER

DEVICE CHARACTERISTICS

12/0604

D-Pak

IRLR8103VPbF

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PD - 95093A

IRLR8103V

RDS

(

)

7.9 mΩ

QG27 nC

QSW 12 nC

QOSS 29nC

Absolute Maximum Ratings

Symbol Units

VDS

VGS

Continuous Drain or Source Current

TC = 25°C

(VGS > 10V) TC= 90°C

IDM

TC = 25°C

TC = 90°C

TJ , TSTG °C

ISM

Thermal Resistance

Symbol Typ. Max. Units

RθJA ––– 50

RθJC ––– 1.09 °C/W

PD W

IRLR8103V

363

±20

363

115

-55 to 150

Power Dissipation

e

Parameter

Maximum Junction-to-Ambient

Maximum Junction-to-Case

Junction & Storage Temperature Range

Continuous Source Current (Body Diode)

Pulsed Source Current

Parameter

Drain-Source Voltage

Gate-Source Voltage

Pulsed Drain Current

• N-Channel Application-Specific MOSFETs

• Ideal for CPU Core DC-DC Converters

• Low Conduction Losses

• Low Switching Losses

• Minimizes Parallel MOSFETs for high current

applications

•100% RG Tested

•Lead-Free

Description

This new device employs advanced HEXFET Power

MOSFET technology to achieve an unprecedented balance

of on-resistance and gate charge. The reduced conduction

and switching losses make it ideal for high efficiency DC-

DC converters that power the latest generation of

microprocessors.

The IRLR8103V has been optimized for all parameters

that are critical in synchronous buck converters including

RDS(on), gate charge and Cdv/dt-induced turn-on immunity.

The IRLR8103V offers an extremely low combination of

Qsw & RDS(on) for reduced losses in both control and

synchronous FET applications.

The package is designed for vapor phase, infra-red,

convection, or wave soldering techniques. Power

dissipation of greater than 2W is possible in a typical PCB

mount application.

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IRLR8103VPbF

Notes:

Repetitive rating; pulse width limited by max. junction temperature.

Pulse width ≤ 400 µs; duty cycle ≤ 2%.

When mounted on 1 inch square copper board, t < 10 sec.

Typ = measured - Qoss

 Typical values of RDS(on) measured at VGS = 4.5V, QG, QSW and QOSS measured at VGS = 5.0V, IF = 15A.

Electrical Characteristics

Parameter Symbol Min Typ Max Units

Drain-to-Source Breakdown Voltage BVDSS 30 ––– ––– V

Static Drain-Source RDS(on) ––– 6.9 9.0

On-Resistance ––– 7.9 10.5

Gate Threshold Voltage VGS(th) 1.0 ––– 3.0 V

Drain-to-Source Leakage Current IDSS ––– ––– 50 µA

––– ––– 20

––– ––– 100

Gate-Source Leakage Current IGSS ––– ––– ±100 nA

Total Gate Charge, Control FET QG––– 27 –––

Total Gate Charge, Synch FET QG––– 23 –––

Pre-Vth Gate-Source Charge QGS1 ––– 4.7 –––

Post-Vth Gate-Source Charge QGS2 ––– 2.0 –––

Gate to Drain Charge QGD ––– 9.7 –––

Switch Charge (Qgs2 + Qgd)Q

SW ––– 12 –––

Output Charge QOSS ––– 29 –––

Gate Resistance RG0.8 ––– 3.1 Ω

Turn-On Delay Time td(on) ––– 10 –––

Rise Time tr––– 9 –––

Turn-Off Delay Time td(off) ––– 24 –––

Fall Time tf––– 18 –––

Input Capacitance Ciss ––– 2672 –––

Output Capacitance Coss ––– 1064 –––

Reverse Transfer Capacitance Crss ––– 109 –––

Source-Drain Rating & Characteristics

Parameter Symbol Min Typ Max Units

Diode Forward Voltage VSD ––– 0.9 1.3 V

Reverse Recovery Charge

Qrr ––– 103 ––– nC

Reverse Recovery Charge Qrr(s) ––– 96 ––– nC

(with Parallel Schottky)

VGS = 5V, ID = 15A, VDS = 16V

VDS = 24V, VGS = 0

VDD = 16V

VDS = 24V, VGS = 0, TJ = 100°C

Conditions

VGS = 0V, ID = 250µA

VGS = 10V, ID = 15A

Conditions

di/dt = 700A/µs , (with 10BQ040)

VDS= 16V, VGS = 0V, IF = 15A

di/dt ~ 700A/µs

VDS = 16V, VGS = 0V, IF = 15A

IS = 15A

, VGS = 0V

VGS = 4.5V, ID = 15A

mΩ

µA

VDS = 16V, VGS = 0

VDS = 16V, ID = 15A

VGS = 5V, VDS < 100mV

VDS = VGS, ID = 250µA

VDS = 30V, VGS = 0V

VGS = ± 20V

pF VGS = 16V, VGS=0

ID = 15A

VGS = 5.0V

Clamped Inductive Load

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IRLR8103VPbF

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance

Vs. Temperature

100

1000

0.1 1 10 100

20µs PULSE WIDTH

T = 25 C

J°

TOP

BOTTOM

VGS

15V

10V

7.0V

5.5V

4.5V

4.0V

3.5V

2.7V

V , Drain-to-Source Voltage (V)

I , Drain-to-Source Current (A)

2.7V

100

1000

0.1 1 10 100

20µs PULSE WIDTH

T = 150 C

J°

TOP

BOTTOM

VGS

15V

10V

7.0V

5.5V

4.5V

4.0V

3.5V

2.7V

V , Drain-to-Source Voltage (V)

I , Drain-to-Source Current (A)

2.7V

-60 -40 -20 020 40 60 80 100 120 140 160

0.0

0.5

1.0

1.5

2.0

T , Junction Temperature ( C)

R , Drain-to-Source On Resistance

(Normalized)

DS(on)

V =

I =

10V

15A

100

1000

2.0 3.0 4.0 5.0 6.0 7.0

V = 15V

20µs PULSE WIDTH

V , Gate-to-Source Voltage (V)

I , Drain-to-Source Current (A)

T = 25 C

J°

T = 150 C

J°

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IRLR8103VPbF

Fig 7. Typical Source-Drain Diode

Forward Voltage

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 7. Typical Source-Drain Diode

Forward Voltage

Fig 8. Maximum Safe Operating Area

1 10 100

1000

2000

3000

4000

5000

V , Drain-to-Source Voltage (V)

C, Capacitance (pF)

0V,

f = 1MHz

+ C

C SHORTED

iss gs gd , ds

rss gd

oss ds gd

Ciss

Coss

Crss

0 5 10 15 20 25 30

Q , Total Gate Charge (nC)

V , Gate-to-Source Voltage (V)

I =

D15A

V = 15V

V = 24V

100

1000

10000

1 10 100

OPERATION IN THIS AREA LIMITED

BY RDS(on)

Single Pulse

= 150 C

= 25 C

V , Drain-to-Source Voltage (V)

I , Drain Current (A)I , Drain Current (A)

10us

100us

1ms

10ms

0.1

100

1000

0.0 0.4 0.8 1.2 1.6 2.0 2.4

V ,Source-to-Drain Voltage (V)

I , Reverse Drain Current (A)

V = 0 V

T = 25 C

J°

T = 150 C

J°

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IRLR8103VPbF

Fig 9. Maximum Drain Current Vs.

Case Temperature

Fig 10a. Switching Time Test Circuit

90%

10%

d(on)

d(off)

Fig 10b. Switching Time Waveforms

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

VDS

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

VGS

D.U.T.

10V

25 50 75 100 125 150

100

T , Case Temperature ( C)

I , Drain Current (A)

LIMITED BY PACKAGE

Fig 9. Maximum Drain Current Vs.

Case Temperature

Fig 10a. Switching Time Test Circuit

90%

10%

d(on)

d(off)

Fig 10b. Switching Time Waveforms

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

VDS

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

VGS

D.U.T.

10V

VDD

0.01

0.1

0.00001 0.0001 0.001 0.01 0.1

Notes:

1. Duty factor D = t / t

2. Peak T =P x Z + T

1 2

JDM thJC C

t , Rectangular Pulse Duration (sec)

Thermal Response(Z )

thJC

0.01

0.02

0.05

0.10

0.20

D = 0.50

SINGLE PULSE

(THERMAL RESPONSE)

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IRLR8103VPbF

Fig 13. On-Resistance Vs. Gate Voltage

Fig 12. On-Resistance Vs. Drain Current

Fig 14a&b. Basic Gate Charge Test Circuit and Waveform

D.U.T. V

3mA

.3µF

50KΩ

.2µF

12V

Current Regulator

Same Type as D.U.T.

Current Sampling Resistors

VGS

Charge

0 50 100 150 200 250 300 350

ID , Drain Current ( A )

0.006

0.008

0.010

0.012

0.014

0.016

RDS ( on ) , Drain-to-Source On Resistance ( Ω )

VGS = 4.5V

VGS = 10V

0.0 2.0 4.0 6.0 8.0

VGS, Gate -to -Source Voltage (V)

0.006

0.008

0.010

0.012

0.014

RDS(on), Drain-to -Source On Resistance (Ω)

ID = 15A

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IRLR8103VPbF

D-Pak (TO-252AA) Part Marking Information

D-Pak (TO-252AA) Package Outline

Dimensions are shown in millimeters (inches)

IN THE ASSEMBLY LINE "A"

ASS EMBLED ON WW 16, 1999

EXAMPLE:

WITH ASSEMBLY

THIS IS AN IRFR120

LOT CODE 1234

YEAR 9 = 1999

DAT E CODE

WE E K 16

PART NUMBER

LOGO

INTERNATIONAL

RECTIFIER

ASSEMBLY

LOT CODE

916A

IRFU120

YEAR 9 = 1999

DATE CODE

P = DE S I GNAT E S L E AD-F R E E

PRODUCT (OPT IONAL)

Note: "P" in assembly line position

i ndicates "L ead-F r ee"

12 34

WEEK 16

A = ASSEMBLY SITE CODE

PART NUMBER

IRF U120

LINE A

LOGO

LOT CODE

ASSEMBLY

INT ERNAT IONAL

RECT IF IER

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IRLR8103VPbF

Data and specifications subject to change without notice.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.12/04

D-Pak (TO-252AA) Tape & Reel Information

Dimensions are shown in millimeters (inches)

16.3 ( .641 )

15.7 ( .619 )

8.1 ( .318 )

7.9 ( .312 )

12.1 ( .476 )

11.9 ( .469 ) FEED DIRECTION FEED DIRECTION

16.3 ( .641 )

15.7 ( .619 )

TRR TRL

NOTES :

1. CONTROLLING DIMENSION : MILLIMETER.

2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).

3. OUTLINE CONFORMS TO EIA-481 & EIA-541.

NOTES :

1. OUTLINE CONFORMS TO EIA-481.

16 mm

13 INCH

Note: For the most current drawings please refer to the IR website at:

http://www.irf.com/package/