Vishay Siliconix
Si9986
Document Number: 70007
S11-0800-Rev. G, 25-Apr-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Product is End of Life 12/2014
Buffered H-Bridge Driver with Integrate MOSFET
FEATURES
• 1 A H-bridge
• 200 kHz switching rate
• Shoot-through limited
• TTL compatible inputs
• 3.8 V to 13.2 V operating range
• Surface mount packaging
APPLICATIONS
•VCM driver
• Brushed motor driver
• Stepper motor driver
• Power converter
• Optical disk drives
• Power supplies
• High performance servo
DESCRIPTION
The Si9986 is an integrated, buffered H-bridge with TTL
compatible inputs and the capability of delivering a
continuous 1 A at VDD = 12 V (room temperature) at
switching rates up to 200 kHz. Internal logic prevents the
upper and lower outputs of either half-bridge from being
turned on simultaneously. Unique input codes allow both
outputs to be forced low (for braking) or forced to a high
impedance level.
The Si9986 is available in both standard and lead (Pb)-free,
8-pin SOIC packages, specified to operate over a voltage
range of 3.8 V to 13.2 V, and the commercial temperature
range of 0 °C to 70 °C (C suffix) and the industrial
temperature range of - 40 °C to 85 °C (D suffix).
FUNCTIONAL BLOCK DIAGRAM, PIN CONFIGURATION AND TRUTH TABLE
VDD
OUTPUT
AB
INA
INB
GND
SA
Shoot-Through
Protection Logic
SB
(3)
(7)
(6)
(2) (1) (8) (5) (4)
GND
SO-8
5
6
7
8
Top View
2
3
4
1
SAOUTA
VDD
INA
INB
SBOUTB
Si9986
PIN DESCRIPTION
Pin
Number Name Function
1SASource of the low-side MOSFET on bridge arm A
2 GND Ground
3VDD IC power supply
4SBSource of the low-side MOSFET on bridge arm B
5OUTBCenter tap of bridge arm B. Connects to one end
of the load
6INBInput signal to control bridge arm B
7INAInput signal to control bridge arm A
8OUTACenter tap of bridge arm A. Connects to the other
end of the load
ORDERING INFORMATION
Part Number Temperature
Range Package
Si9986CY-T1 0 °C to 70 °C Tape and reel
Si9986DY-T1 - 40 °C to 85 °C
Si9986CY-T1-E3 0 °C to 70 °C Lead (Pb)-free
Tape and reel
Si9986DY-T1-E3 - 40 °C to 85 °C
Si9986CY 0 °C to 70 °C Bulk (tubes)
Si9986DY - 40 °C to 85 °C
TRUTH TABLE
INAINBOUTAOUTB
1010
0101
0000
11HiZHiZ
* Pb containing terminations are not RoHS compliant, exemptions may apply.
Available
Pb-free
RoHS*
COMPLIANT
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Document Number: 70007
S11-0800-Rev. G, 25-Apr-11
Vishay Siliconix
Si9986
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes:
a. Device mounted with all leads soldered or welded to PC board.
b. Derate 10 mW/°C above 25 °C.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Notes:
a. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
ABSOLUTE MAXIMUM RATINGSa
Parameter Limit Unit
Voltage on any Pin with Respect to Ground - 0.3 to VDD + 0.3
VVoltage on Pins 5, 8 with Respect to Ground - 1 to VDD + 1
Voltage on Pins 1, 4 - 0.3 to GND + 1
Peak Output Current 1.5 A
Storage Temperature - 65 to 150 °C
Maximum Junction Temperature (TJ)150
Maximum VDD 15 V
Power Dissipationb1W
ΘJA 100 °C/W
Operating Temperature Range Si9986CY 0 to 70 °C
Si9986DY - 45 to 85
RECOMMENDED OPERATING RANGE
Parameter Limit Unit
VDD 3.8 to 13.2 V
Maximum Junction Temperature (TJ)125 °C
SPECIFICATIONS
Parameter Symbol
Test Conditions
Unless Otherwise Specified
VDD = 3.8 to 13.2 V
SA at GND, SB at GND
Limits
C Suffix, 0 °C to 70 °C
D Suffix, - 40 °C to 85 °C
Unit MinaTypbMaxa
Input
Input Voltage High VINH 2V
Input Voltage Low VINL 1
Input Current with Input Voltage High IINH VIN = 2 V 1 µA
Input Current with Input Voltage Low IINL VIN = 0 V - 1
Output
Output Voltage High VOUTH
IOUT = - 500 mA VDD = 10.8 V 10.5 10.7
V
VDD = 4.5 V 4.1 4.3
IOUT = - 300 mA, VDD = 3.8 V 3.4 3.7
Output Voltage Low VOUTL
IOUT = 500 mA VDD = 10.8 V 0.2 0.3
VDD = 4.5 V 0.2 0.4
IOUT = 300 mA, VDD = 3.8 V 0.1 0.4
Output Leakage Current High IOLH INA = INB ≥ 2 V, VOUT = VDD = 13.2 V - 10 0 µA
Output Leakage Current Low IOLL VOUT = 0, VDD = 13.2 V 0 10
Output V Clamp High VCLH INA = INB ≥ 2 V IOUT = 100 mA VDD + 0.7 V
Output V Clamp Low VCLL IOUT = - 100 mA - 0.7
Supply
VDD Supply Current IDD
IN = 100 kHz, VDD = 5 V 2 mA
INA = INB = 4.5 V, VDD = 5.5 V 300 µA
Dynamic
Propogation Delay Time TPLH VDD = 5 V 300 nS
TPHL 100
Document Number: 70007
S11-0800-Rev. G, 25-Apr-11
www.vishay.com
3
Vishay Siliconix
Si9986
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Output High Voltage vs. Output Current
Supply Current vs. Supply Voltage
Supply Current vs. Temperature
0
3
6
9
12
15
0.50 0.75 1.00 1.25 1.5
0
(V)VOUTH
Out
p
ut Current
(
A
)
VDD = 13.2 V
5.5 V
3.8 V
40
60
80
100
120
140
468101214
VDD - Supply Voltage (V)
- Standby (
IDD A)µ
- Standby (
IDD A)µ
60
80
100
120
140
160
180
200
-35 -- 20 5 10 25 40 55 70 85
Temperature (°C)
VDD = 13.2 V
5.5 V
Output Low Voltage vs. Output Current
Supply Current vs. Supply Voltage
Supply Current vs. Temperature
0
100
200
300
400
500
600
700
0.50 0.75 1.00 1.25 1.5
0
Out
p
ut Current
(
A
)
(mV)VOUTL
VDD = 3.8 V
5.5 V
13.2 V
0
1
2
3
4
5
6
468101214
(mA)
IDD
VDD - Supply Voltage (V)
f = 100 kHz
0
2
4
6
8
-35 -20 -5 10 25 40 55 70 85
(mA)
IDD
Temperature (°C)
VDD = 13.2 V
5.5 V
f = 100 kHz
www.vishay.com
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Document Number: 70007
S11-0800-Rev. G, 25-Apr-11
Vishay Siliconix
Si9986
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?70007.
Supply Current vs. Frequency
(mA)
IDD
0
3
6
9
12
15
0 50 100 150 200
VDD = 13.2 V
f - Frequency (kHz)
5.5 V
3.8 V
Propagation Time vs. Supply Voltage
Vishay Siliconix
Package Information
Document Number: 71192
11-Sep-06
www.vishay.com
1
DIM
MILLIMETERS INCHES
Min Max Min Max
A 1.35 1.75 0.053 0.069
A10.10 0.20 0.004 0.008
B 0.35 0.51 0.014 0.020
C 0.19 0.25 0.0075 0.010
D 4.80 5.00 0.189 0.196
E 3.80 4.00 0.150 0.157
e 1.27 BSC 0.050 BSC
H 5.80 6.20 0.228 0.244
h 0.25 0.50 0.010 0.020
L 0.50 0.93 0.020 0.037
q0°8°0°8°
S 0.44 0.64 0.018 0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498
4
3
12
5
6
87
HE
h x 45
C
All Leads
q0.101 mm
0.004"
L
BA
1
A
e
D
0.25 mm (Gage Plane)
SOIC (NARROW): 8-LEAD
JEDEC Part Number: MS-012
S
Legal Disclaimer Notice
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Revision: 01-Jan-2019 1Document Number: 91000
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