AFT09MS007NT1
1
RF Device Data
Freescale Semiconductor, Inc.
RF Power LDMOS Transistor
High Ruggedness N--Channel
Enhancement--Mode Lateral MOSFET
Designed for handheld two--way radio applications with frequencies from
136 to 941 MHz. The high gain, ruggedness and wideband performance of this
device makes it ideal for large--signal, common--source amplifier applications
in handheld radio equipment.
Narrowband Performance (7.5 Vdc, IDQ = 100 mA, TA=25C, CW)
Frequency
(MHz)
Gps
(dB)
D
(%)
Pout
(W)
870 (1) 15.2 71.0 7.3
Wideband Performance (7.5 Vdc, TA=25C, CW)
Frequency
(MHz)
Pin
(W)
Gps
(dB)
D
(%)
Pout
(W)
136–174 0.25 14.6 69.0 7.2
350–470 (2,5) 0.20 15.6 60.9 7.3
450–520 (3,5) 0.22 15.4 56.0 7.5
760–860 (4,5) 0.23 15.1 48.1 7.5
Load Mismatch/Ruggedness
Frequency
(MHz)
Signal
Type VSWR
Pin
(W)
Test
Voltage Result
870 (1) CW > 65:1 at all
Phase Angles
0.4
(3 dB Overdrive)
10.8 No Device
Degradation
1. Measured in 870 MHz narrowband test circuit.
2. Measured in 350–470 MHz UHF broadband reference circuit.
3. Measured in 450–520 MHz UHF broadband reference circuit.
4. Measured in 760–860 MHz UHF broadband reference circuit.
5. The values shown are the minimum measured performance numbers across the
indicated frequency range.
Features
Characterized for Operation from 136 to 941 MHz
Unmatched Input and Output Allowing Wide Frequency Range Utilization
Integrated ESD Protection
Integrated Stability Enhancements
Wideband — Full Power Across the Band
Exceptional Thermal Performance
Extreme Ruggedness
High Linearity for: TETRA, SSB
In Tape and Reel. T1 Suffix = 1,000 Units, 16 mm Tape Width, 7--inch Reel.
Typical Applications
Output Stage VHF Band Handheld Radio
Output Stage UHF Band Handheld Radio
Output Stage for 700–800 MHz Handheld Radio
Document Number: AFT09MS007N
Rev. 1, 4/2014
Freescale Semiconductor
Technical Data
136–941 MHz, 7 W, 7.5 V
WIDEBAND
RF POWER LDMOS TRANSISTOR
AFT09MS007NT1
PLD--1.5W
Note: The center pad on the backside of
the package is the source terminal
for the transistor.
Figure 1. Pin Connections
DrainGate
Freescale Semiconductor, Inc., 2013–2014.
A
ll rights reserved.
2
RF Device Data
Freescale Semiconductor, Inc.
AFT09MS007NT1
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain--Source Voltage VDSS –0.5, +30 Vdc
Gate--Source Voltage VGS –6.0, +12 Vdc
Operating Voltage VDD 12.5, +0 Vdc
Storage Temperature Range Tstg –65 to +150 C
Case Operating Temperature Range TC–40 to +150 C
Operating Junction Temperature (1,2) TJ–40 to +150 C
Total Device Dissipation @ TC=25C
Derate above 25C
PD114
0.91
W
W/C
Table 2. Thermal Characteristics
Characteristic Symbol Value (2,3) Unit
Thermal Resistance, Junction to Case
Case Temperature 74C, 7 W CW, 7.5 Vdc, IDQ = 100 mA, 870 MHz
RJC 1.1 C/W
Table 3. ESD Protection Characteristics
Test Methodology Class
Human Body Model (per JESD22--A114) 2, passes 2500 V
Machine Model (per EIA/JESD22--A115) B, passes 200 V
Charge Device Model (per JESD22--C101) IV, passes 2000 V
Table 4. Moisture Sensitivity Level
Test Methodology Rating Package Peak Temperature Unit
Per JESD22--A113, IPC/JEDEC J--STD--020 3260 C
Table 5. Electrical Characteristics (TA=25C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS =30Vdc,V
GS =0Vdc)
IDSS — — 10 Adc
Zero Gate Voltage Drain Leakage Current
(VDS =7.5Vdc,V
GS =0Vdc)
IDSS — — 2 Adc
Gate--Source Leakage Current
(VGS =5Vdc,V
DS =0Vdc)
IGSS — — 1 nAdc
On Characteristics
Gate Threshold Voltage
(VDS =10Vdc,I
D=110Adc)
VGS(th) 1.6 2.1 2.6 Vdc
Drain--Source On--Voltage
(VGS =10Vdc,I
D=1.1Adc)
VDS(on) —0.12 —Vdc
Forward Transconductance
(VDS =7.5Vdc,I
D=3Adc)
gfs —9.8 — S
Dynamic Characteristics
Reverse Transfer Capacitance
(VDS =7.5Vdc30 mV(rms)ac @ 1 MHz, VGS =0Vdc)
Crss —2.7 —pF
Output Capacitance
(VDS =7.5Vdc30 mV(rms)ac @ 1 MHz, VGS =0Vdc)
Coss —56 —pF
Input Capacitance
(VDS =7.5Vdc,V
GS =0Vdc30 mV(rms)ac @ 1 MHz)
Ciss —107 —pF
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
(continued)
AFT09MS007NT1
3
RF Device Data
Freescale Semiconductor, Inc.
Table 5. Electrical Characteristics (TA=25C unless otherwise noted) (continued)
Characteristic Symbol Min Typ Max Unit
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD =7.5Vdc,I
DQ = 100 mA, Pin =0.22W,f=870MHz
Common--Source Amplifier Output Power Pout —7.3 — W
Drain Efficiency D—71.0 — %
Load Mismatch/Ruggedness (In Freescale Test Fixture, 50 ohm system) IDQ = 100 mA
Frequency
(MHz)
Signal
Type VSWR
Pin
(W) Test Voltage, VDD Result
870 CW > 65:1 at all Phase Angles 0.4
(3 dB Overdrive)
10.8 No Device Degradation
4
RF Device Data
Freescale Semiconductor, Inc.
AFT09MS007NT1
TYPICAL CHARACTERISTICS
160
109
90
108
107
105
100 110 120 130
MTTF (HOURS)
140 150
106
12
1
200
082
VDS, DRAIN--SOURCE VOLTAGE (VOLTS)
Figure 2. Capacitance versus Drain--Source Voltage
C, CAPACITANCE (pF)
Ciss
100
10
Figure 3. Drain Current versus Drain--Source Voltage
TJ, JUNCTION TEMPERATURE (C)
Figure 4. MTTF versus Junction Temperature — CW
Note: MTTF value represents the total cumulative operating time
under indicated test conditions.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
VDD =7.5Vdc
0
3
1
VDS, DRAIN--SOURCE VOLTAGE (VOLTS)
1.5
VGS =3.75Vdc
2.5
2
1
234 10
IDS, DRAIN CURRENT (AMPS)
3.5 Vdc
TA=25C
0
3.5
4
10
46
Coss
Crss
Measured with 30 mV(rms)ac @ 1 MHz, VGS =0Vdc
0.5
57689
3.25 Vdc
3Vdc
2.5 Vdc
1.59 Amps
ID=1.06Amps
1.33 Amps
AFT09MS007NT1
5
RF Device Data
Freescale Semiconductor, Inc.
870 MHz NARROWBAND PRODUCTION TEST FIXTURE
Figure 5. AFT09MS007NT1 Narrowband Test Circuit Component Layout — 870 MHz
AFT09MS007N
Rev. 2
C1
C2 C3 B1
C4*
L1 C6 C8
C7 C9
C5
L2
C14*
C15*
L3 C16
C13
C11 C12
C10
*C4, C14 and C15 are mounted vertically.
D49708
Table 6. AFT09MS007NT1 Narrowband Test Circuit Component Designations and Values — 870 MHz
Part Description Part Number Manufacturer
B1 RF Bead, Short 2743019447 Fair-Rite
C1 22 F, 35 V Tantalum Capacitor T491X226K035AT Kemet
C2, C12 0.1 F Chip Capacitors CDR33BX104AKWS Kemet
C3, C11 0.01 F Chip Capacitors C0805C103K5RAC Kemet
C4, C10, C16 56 pF Chip Capacitors ATC100B560CT500XT ATC
C5 3.9 pF Chip Capacitor ATC100B3R9CT500XT ATC
C6, C7 7.5 pF Chip Capacitors ATC100B7R5CT500XT ATC
C8, C9 6.8 pF Chip Capacitors ATC100B6R8CT500XT ATC
C13 330 F, 35 V Electrolytic Capacitor MCGPR35V337M10X16-RH Multicomp
C14, C15 3.6 pF Chip Capacitors ATC100B3R6CT500XT ATC
L1 8.0 nH Inductor A03TKLC Coilcraft
L2 18.5 nH Inductor A05TKLC Coilcraft
L3 5.0 nH Inductor A02TKLC Coilcraft
PCB Rogers RO4350B, 0.030,r=3.66 D49708 MTL
6
RF Device Data
Freescale Semiconductor, Inc.
AFT09MS007NT1
Z1 0.3280.080Microstrip
Z2 0.4900.120Microstrip
Z3 0.6100.320Microstrip
Z4 0.1600.3200.620Taper
Z5 0.0580.620Microstrip
Z6 0.2880.620Microstrip
Z7 0.3940.620Microstrip
Z8 0.3980.620Microstrip
RF
INPUT
C2
VBIAS
VSUPPLY
C10
RF
OUTPUT
Z15
L3
C16
Z14
Z9 0.2950.620Microstrip
Z10 0.0460.620Microstrip
Z11 0.1590.6200.320Taper
Z12 0.3790.320Microstrip
Z13 0.0550.320Microstrip
Z14 0.6650.120Microstrip
Z15 0.2380.080Microstrip
Figure 6. AFT09MS007NT1 Narrowband Test Circuit Schematic — 870 MHz
Table 7. AFT09MS007NT1 Narrowband Test Circuit Microstrips — 870 MHz
DescriptionMicrostripDescriptionMicrostrip
Z13
C14
C15
Z12Z11Z10
L2
C11 C12
Z9
C9
C8
Z8
Z7
C6
C7
Z6
L1
C4
B1
C3
Z5Z4Z3
C5
Z2Z1
C13
+
+
C1
AFT09MS007NT1
7
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS — 870 MHz
0
01234
4
2
6
Pout, OUTPUT POWER (WATTS)
8
10
0.5 1.5 2.5 3.5 4.5
12
VDD =7.5Vdc,f=870MHz
Pin =0.11W
VGS, GATE--SOURCE VOLTAGE (VOLTS)
Figure 7. Output Power versus Gate--Source Voltage
at a Constant Input Power
Figure 8. Power Gain, Output Power and Drain
Efficiency versus Input Power
Pin, INPUT POWER (WATTS)
Gps, POWER GAIN (dB)
0
10
8
0.01 0.7
30
50
40
0
20
16
14
12
18
60
70
90
0.1
D, DRAIN EFFICIENCY (%)
D
Gps
Pout
VDD =7.5Vdc,I
DQ = 100 mA
f = 870 MHz
6
4
2
80
10
Pout, OUTPUT POWER (WATTS)
Pin =0.22W
VDD =7.5Vdc,I
DQ = 100 mA, Pout =7W
f
MHz
Zsource
Zload
870 0.54 + j1.35 1.31 + j1.93
Zsource = Test circuit impedance as measured from
gate to ground.
Zload = Test circuit impedance as measured from
drain to ground.
Figure 9. Narrowband Series Equivalent Source and Load Impedance — 870 MHz
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
Zsource Zload
50
50
8
RF Device Data
Freescale Semiconductor, Inc.
AFT09MS007NT1
350–470 MHz UHF BROADBAND REFERENCE CIRCUIT
Table 8. 350–470 MHz UHF Broadband Performance (In Freescale Reference Circuit, 50 ohm system)
VDD =7.5Vdc,I
DQ = 200 mA, TA=25C, CW
Frequency
(MHz)
Pin
(W)
Gps
(dB)
D
(%)
Pout
(W)
350 0.15 16.6 60.9 7.3
410 0.15 16.6 66.5 7.3
470 0.20 15.6 70.1 7.3
Table 9. Load Mismatch/Ruggedness (In Freescale Reference Circuit)
Frequency
(MHz)
Signal
Type VSWR
Pin
(W) Test Voltage, VDD Result
470 CW > 65:1 at all
Phase Angles
0.4
(3 dB Overdrive)
10.8 No Device
Degradation
AFT09MS007NT1
9
RF Device Data
Freescale Semiconductor, Inc.
350–470 MHz UHF BROADBAND REFERENCE CIRCUIT
Figure 10. AFT09MS007NT1 UHF Broadband Reference Circuit Component Layout — 350–470 MHz
C1
L1
C2
C3
C4
C5
L2
C6 C7
C8
C9
C10
C11
L3
J1
Q1
L5
L4
L6
L7
C14C15
C13
C12
C19
C18
C17
C16
R1
Rev. 1
D58008
Table 10. AFT09MS007NT1 UHF Broadband Reference Circuit Component Designations and Values — 350–470 MHz
Part Description Part Number Manufacturer
C1, C10, C19 100 pF Chip Capacitors ATC600F101JT250XT ATC
C2 10 pF Chip Capacitor ATC600F100JT250XT ATC
C3 3.0 pF Chip Capacitor ATC600F3R0BT250XT ATC
C4, C8 27 pF Chip Capacitors ATC600F270JT250XT ATC
C5 5.1 pF Chip Capacitor ATC600F5R1BT250XT ATC
C6, C7 30 pF Chip Capacitors ATC600F300JT250XT ATC
C9 10 nF Chip Capacitor C1210C103J5GAC-TU Kemet
C11 82 pF Chip Capacitor ATC600F820JT250XT ATC
C12 240 pF Chip Capacitor ATC600F241JT250XT ATC
C13 2.2 F Chip Capacitor C3225X7R1H225K250AB TDK
C14 0.1 F Chip Capacitor GRM21BR71H104KA01B Murata
C15 0.01 F Chip Capacitor GRM21BR72A103KA01B Murata
C16 47 pF Chip Capacitor ATC600F470JT250XT ATC
C17 18 pF Chip Capacitor ATC600F180BT250XT ATC
C18 7.5 pF Chip Capacitor ATC100A7R5JT150XT ATC
J1 3--pin Header 22-28-8360 Molex
L1 8.1 nH Inductor 0908SQ8N1 Coilcraft
L2 2.55 nH, 3 Turn Inductor 0906-3JLC Coilcraft
L3, L4, L5 21.5 nH Inductors 0908SQ22N Coilcraft
L6 3.85 nH, 4 Turn Inductor 0906-4JLC Coilcraft
L7 8.9 nH Inductor 0806SQ8N9 Coilcraft
Q1 RF Power LDMOS Transistor AFT09MS007NT1 Freescale
R1 62 , 1/10 W Chip Resistor RG2012N-620-B-T1 Susumu
PCB Shengyi S1000-2, 0.020,r=4.8 D58008 MTL
10
RF Device Data
Freescale Semiconductor, Inc.
AFT09MS007NT1
Figure 11. AFT09MS007NT1 UHF Broadband Reference Circuit Schematic — 350–470 MHz
RF
INPUT
C6
VBIAS
VSUPPLY
C12
RF
OUTPUT
Z25
C19
Z23Z22
C16
Z21
L5
C13 C14 C15
C5
Z4Z3
C1
Z2Z1 L1
C2
L2
Z5 Z6
C3
Z7
C4
Z8 Z9
R1
L3
Z10 Z11
C11
Z16 Z17 L6
Z20
L4
L7
C18C17
Z12 Z13 Z14 Z15
C7 C8
C10C9
Z18 Z19 Z24
Table 11. AFT09MS007NT1 UHF Broadband Reference Circuit Microstrips — 350–470 MHz
DescriptionMicrostripDescriptionMicrostrip
Z18 0.0880.170Microstrip
Z19 0.2050.046Microstrip
Z20 0.1480.046Microstrip
Z21 0.0320.046Microstrip
Z22 0.1950.046Microstrip
Z23 0.0890.046Microstrip
Z24 0.0460.046Microstrip
Z25 0.0600.034Microstrip
Z1 0.0600.034Microstrip
Z2 0.0260.046Microstrip
Z3 0.0260.046Microstrip
Z4 0.0600.046Microstrip
Z5 0.0540.046Microstrip
Z6 0.0540.046Microstrip
Z7 0.0600.046Microstrip
Z8 0.0840.046Microstrip
Z9 0.0440.046Microstrip
Z10 0.0370.046Microstrip
Z11 0.0550.046Microstrip
Z12 0.2350.046Microstrip
Z13 0.1210.300Microstrip
Z14 0.0310.300Microstrip
Z15 0.0700.146Microstrip
Z16 0.0700.146Microstrip
Z17 0.1600.170Microstrip
DescriptionMicrostrip
AFT09MS007NT1
11
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS — 350–470 MHz UHF BROADBAND
REFERENCE CIRCUIT
320
Gps
f, FREQUENCY (MHz)
Figure 12. Power Gain, Drain Efficiency and Output Power versus
Frequency at a Constant Input Power
12
20
5
90
80
70
60
8
7
6
D, DRAIN
EFFICIENCY (%)
D
Gps, POWER GAIN (dB)
19
17
13
360 380 420 440 480 500
50
Pout,OUTPUT
POWER (WATTS)
VDD =7.5Vdc
Pin =0.20W
IDQ = 200 mA
Pout
18
16
15
14
340 400 460
0
0
VGS, GATE--SOURCE VOLTAGE (VOLTS)
Figure 13. Output Power versus Gate--Source Voltage
1234
10
2
8
4
Pout, OUTPUT POWER (WATTS)
f = 410 MHz
VDD =7.5Vdc,P
in =0.25W
0
0
Detail A
1.2 20.80.4
0.6
0.4
0.8
f = 410 MHz
Detail A
VDD =7.5Vdc
Pin =0.1W
Pout, OUTPUT POWER (WATTS)
VGS, GATE--SOURCE VOLTAGE (VOLTS)
6
12
14
VDD =7.5Vdc,P
in =0.1W
0.2
VDD =7.5Vdc
Pin =0.25W
5
1.6
Figure 14. Power Gain, Drain Efficiency and Output
Power versus Input Power and Frequency
Pin, INPUT POWER (WATTS)
Gps, POWER GAIN (dB)
13
16
15
0.01 1
Gps
7.5
20
10
0
2.5
19
18
17
20
40
60
80
0.1
Pout
VDD =7.5Vdc
IDQ = 200 mA
14
470 MHz
D
Pout,OUTPUT
POWER (WATTS)
f = 470 MHz
350 MHz
470 MHz
410 MHz
350 MHz
350 MHz
410 MHz
12
5
D, DRAIN
EFFICIENCY (%)
410 MHz
12
RF Device Data
Freescale Semiconductor, Inc.
AFT09MS007NT1
350–470 MHz UHF BROADBAND REFERENCE CIRCUIT
Zo=10
f = 350 MHz
f = 470 MHz
Zload
Zsource
f = 350 MHz
f = 470 MHz
VDD =7.5Vdc,I
DQ = 200 mA, Pout =7.5W
f
MHz
Zsource
Zload
350 2.7 + j6.6 3.5 + j4.2
370 3.3 + j6.2 3.7 + j4.2
390 3.1 + j5.4 3.5 + j4.0
410 2.6 + j6.1 3.5 + j5.0
430 2.1 + j7.1 3.6 + j5.9
450 2.2 + j7.3 3.6 + j5.6
470 2.0 + j7.7 3.0 + j5.8
Zsource = Test circuit impedance as measured from
gate to ground.
Zload = Test circuit impedance as measured from
drain to ground.
Figure 15. UHF Broadband Series Equivalent Source and Load Impedance — 350–470 MHz
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
Zsource Zload
50
50
AFT09MS007NT1
13
RF Device Data
Freescale Semiconductor, Inc.
450–520 MHz UHF BROADBAND REFERENCE CIRCUIT
Table 12. 450–520 MHz UHF Broadband Performance (In Freescale Reference Circuit, 50 ohm system)
VDD =7.5Volts,I
DQ = 150 mA, TA=25C, CW
Frequency
(MHz)
Pin
(W)
Gps
(dB)
D
(%)
Pout
(W)
450 0.21 15.4 57.7 7.5
485 0.21 15.5 56.0 7.5
520 0.18 16.2 66.3 7.5
Table 13. Load Mismatch/Ruggedness (In Freescale Reference Circuit)
Frequency
(MHz)
Signal
Type VSWR
Pin
(W) Test Voltage, VDD Result
520 CW > 65:1 at all
Phase Angles
0.2
(3 dB Overdrive)
10.8 No Device
Degradation
14
RF Device Data
Freescale Semiconductor, Inc.
AFT09MS007NT1
450–520 MHz UHF BROADBAND REFERENCE CIRCUIT
Figure 16. AFT09MS007NT1 UHF Broadband Reference Circuit Component Layout — 450–520 MHz
AFT09MS007N
Rev. 2
C1
L1
C2
C4
C3
C5
L3
C6
R1
Q1
J1 C7 C8
C9
C10
L4
C16
C15
L7
C14
L6
C13
L5
C11 C12
VGG VDD
L2
C17
D49947
Table 14. AFT09MS007NT1 UHF Broadband Reference Circuit Component Designations and Values — 450–520 MHz
Part Description Part Number Manufacturer
C1, C16 100 pF Chip Capacitors ATC600F101JT250XT ATC
C2 7.5 pF Chip Capacitor GQM2195C2E7R5BB12D Murata
C3 5.6 pF Chip Capacitor ATC600F5R6BT250XT ATC
C4 39 pF Chip Capacitor ATC600F390JT250XT ATC
C5, C9 240 pF Chip Capacitors ATC600F241JT250XT ATC
C6, C7 0.1 F Chip Capacitors GRM21BR71H104KA01B Murata
C8 0.01 F Chip Capacitor GRM21BR72A103KA01B Murata
C10 2.2 F Chip Capacitor GRM31CR71H225KA88L Murata
C11, 12 12 pF Chip Capacitors ATC600F120JT250XT ATC
C13 8.2 pF Chip Capacitor ATC600F8R2BT250XT ATC
C14 20 pF Chip Capacitor ATC600F200JT250XT ATC
C15 2 pF Chip Capacitor ATC600F2R0BT250XT ATC
C17 47 pF Chip Capacitor ATC600F470JT250XT ATC
J1 3--pin Header 22-28-8360 Molex
L1 2.55 nH Inductor 0906-3JLC Coilcraft
L2 3.85 nH Inductor 0906-4JLC Coilcraft
L3 22 nH Inductor 0908SQ22N Coilcraft
L4, L5 17 nH Inductors 0908SQ17N Coilcraft
L6 1.65 nH Inductor 0906-2JLC Coilcraft
L7 8.1 nH Inductor 0908SQ8R1N Coilcraft
R1 22 , 1/10 W Chip Resistor RR1220Q-220-D Susumu
Q1 RF Power LDMOS Transistor AFT09MS007N Freescale
PCB Shengyi S1000-2, 0.020,r=4.8 D49947 MTL
AFT09MS007NT1
15
RF Device Data
Freescale Semiconductor, Inc.
Figure 17. AFT09MS007NT1 UHF Broadband Reference Circuit Schematic — 450–520 MHz
Table 15. AFT09MS007NT1 UHF Broadband Reference Circuit Microstrips — 450–520 MHz
DescriptionMicrostripDescriptionMicrostrip
Z16 0.0750.049Microstrip
Z17 0.2790.049Microstrip
Z18 0.0320.046Microstrip
Z19 0.1950.046Microstrip
Z20 0.0890.046Microstrip
Z21 0.0460.046Microstrip
Z22 0.0600.034Microstrip
Z1 0.0600.034Microstrip
Z2 0.0520.046Microstrip
Z3 0.1100.046Microstrip
Z4 0.1180.046Microstrip
Z5 0.0840.046Microstrip
Z6 0.1240.046Microstrip
Z7 0.0840.046Microstrip
Z8 0.2070.046Microstrip
Z9 0.1210.300Microstrip
Z10 0.0310.300Microstrip
Z11 0.0700.146Microstrip
Z12 0.0700.146Microstrip
Z13 0.1380.170Microstrip
Z14 0.0550.170Microstrip
Z15 0.0550.170Microstrip
DescriptionMicrostrip
RF
INPUT
C6
VBIAS
VSUPPLY
C10
RF
OUTPUT
Z22
C16
Z21Z20
C12
Z19
L5
C9 C8 C7
Z12
C5
Z4Z3
C1
Z2Z1 L1
C2
L2 Z5 Z6
C3
Z7
C4
Z8 Z9
R1
L3
Z10 Z11
Z13
C11
Z14 Z15 Z16
C13
Z17 L6 Z18
L4
L7
C15
C17
C14
16
RF Device Data
Freescale Semiconductor, Inc.
AFT09MS007NT1
TYPICAL CHARACTERISTICS — 450–520 MHz UHF BROADBAND
REFERENCE CIRCUIT
440
Gps
f, FREQUENCY (MHz)
Figure 18. Power Gain, Output Power and Drain Efficiency versus
Frequency at a Constant Input Power — 7.5 V
12
20
7
90
80
70
60
10
9
8
D, DRAIN
EFFICIENCY (%)
D
Gps, POWER GAIN (dB)
19
17
13
460 470 490 500 520 530
50
Pout,OUTPUT
POWER (WATTS)
VDD =7.5Vdc
Pin =0.25W
IDQ = 150 mA
Pout
18
16
15
14
450 480 510
0
0
VGS, GATE--SOURCE VOLTAGE (VOLTS)
Figure 19. Output Power versus Gate--Source Voltage
16
1234
10
2
8
4
Pout, OUTPUT POWER (WATTS)
f = 485 MHz
VDD =7.5Vdc,P
in =0.25W
0
0
Detail A
7
12 34
6
5
4
8
f = 485 MHz
Detail A
VDD =7.5Vdc
Pin =0.1W
Pout, OUTPUT POWER (WATTS)
VGS, GATE--SOURCE VOLTAGE (VOLTS)
6
12
14
VDD =7.5Vdc,P
in =0.1W
3
2
1
VDD =7.5Vdc
Pin =0.25W
D, DRAIN
EFFICIENCY (%)
Pout,OUTPUT
POWER (WATTS)
Figure 20. Power Gain, Output Power and Drain
Efficiency versus Input Power and Frequency
Pin, INPUT POWER (WATTS)
Gps, POWER GAIN (dB)
12
15
14
0.03 1
f = 520 MHz
Gps
8
20
12
0
4
18
17
16
19
40
60
80
0.1
Pout
VDD =7.5Vdc
IDQ = 150 mA
13
485 MHz
450 MHz
450 MHz
450 MHz
520 MHz
485 MHz
D
520 MHz
485 MHz
AFT09MS007NT1
17
RF Device Data
Freescale Semiconductor, Inc.
450–520 MHz UHF BROADBAND REFERENCE CIRCUIT
Zo=10
f = 450 MHz
f = 530 MHz
f = 530 MHz
f = 450 MHz
Zload
Zsource
VDD =7.5Vdc,I
DQ = 150 mA, Pout =7.5W
f
MHz
Zsource
Zload
450 0.45 + j2.46 1.56 + j1.05
460 0.40 + j2.37 1.52 + j1.24
470 0.40 + j2.97 1.46 + j1.51
480 0.38 + j3.56 1.39 + j1.71
490 0.41 + j4.16 1.35 + j2.06
500 0.51 + j4.79 1.34 + j2.06
510 0.70 + j5.54 1.37 + j2.30
520 0.93 + j6.44 1.40 + j 2.50
530 1.14 + j7.56 1.42 + j2.62
Zsource = Test circuit impedance as measured from
gate to ground.
Zload = Test circuit impedance as measured from
drain to ground.
Figure 21. UHF Broadband Series Equivalent Source and Load Impedance — 450–520 MHz
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
Zsource Zload
50
50
18
RF Device Data
Freescale Semiconductor, Inc.
AFT09MS007NT1
760–860 MHz BROADBAND REFERENCE CIRCUIT
Table 16. 760–860 MHz Broadband Performance (In Freescale Reference Circuit, 50 ohm system)
VDD =7.5Volts,I
DQ = 150 mA, TA=25C, CW
Frequency
(MHz)
Pin
(W)
Gps
(dB)
D
(%)
Pout
(W)
760 0.20 15.3 48.1 7.0
810 0.16 16.3 54.1 7.0
860 0.21 15.1 59.5 7.0
Table 17. Load Mismatch/Ruggedness (In Freescale Reference Circuit)
Frequency
(MHz)
Signal
Type VSWR
Pin
(W) Test Voltage, VDD Result
810 CW > 65:1 at all
Phase Angles
0.5
(3 dB Overdrive)
9.0 No Device
Degradation
AFT09MS007NT1
19
RF Device Data
Freescale Semiconductor, Inc.
760–860 MHz BROADBAND REFERENCE CIRCUIT
Figure 22. AFT09MS007NR1 Broadband Reference Circuit Component Layout — 760–860 MHz
C1
VGG GND VDD
C2
B1
C8 J1
R1
C6
C3
C5 C7
Q1
C4
C10 C12 C14
C11
C13
C15
C16
B2
C9
L1
AFT09MS007N Rev. 1
D55295
Table 18. AFT09MS007NR1 Broadband Reference Circuit Component Designations and Values — 760–860 MHz
Part Description Part Number Manufacturer
B1, B2 RF Beads 2743019447 Fair-Rite
C1 10 pF Chip Capacitor GQM2195C2E100FB15 Murata
C2 3.9 pF Chip Capacitor GQM2195C2E3R9BB15 Murata
C3 7.5 pF Chip Capacitor GQM2195C2E7R5BB15 Murata
C4, C13, C16 100 pF Chip Capacitors GQM2195C2E101GB15 Murata
C5 8.2 pF Chip Capacitor GQM2195C2E8R2BB15 Murata
C6, C7 20 pF Chip Capacitors GQM2195C2E200GB15 Murata
C8 1F Chip Capacitor GRM31MR71H105KA88L Murata
C9 10 F Chip Capacitor GRM31CR61H106KA12L Murata
C10, C11 12 pF Chip Capacitors GQM2195C2E120FB15 Murata
C12 5.1 pF Chip Capacitor GQM2195C2E5R1BB15 Murata
C14 4.7 pF Chip Capacitor GQM2195C2E4R7BB15 Murata
C15 3.9 pF Chip Capacitor GQM2195C2E3R9BB15 Murata
J1 3--pin Header 22-28-8360 Molex
L1 22 nH Inductor 0908SQ-22NJL Coilcraft
Q1 RF Power LDMOS Transistor AFT09MS007N Freescale
R1 200 Chip Resistor CRCW0805200RJNEA Vishay
PCB Shengyi S1000--2, 0.020,r=4.8 D55295 MTL
20
RF Device Data
Freescale Semiconductor, Inc.
AFT09MS007NT1
Figure 23. AFT09MS007NT1 Broadband Reference Circuit Schematic — 760–860 MHz
Table 19. AFT09MS007NT1 Broadband Reference Circuit Microstrips — 760–860 MHz
DescriptionMicrostripDescriptionMicrostrip DescriptionMicrostrip
RF
INPUT
VBIAS VSUPPLY
C13
RF
OUTPUT
Z19
C16
Z12
C4
Z4Z3
C1
Z2Z1
C2
Z5 Z6
C3
Z7
C5
Z8
R1
Z13
C10
Z14 Z15
C11
Z16
C12
Z17 Z18
C7
C6
Z9
B1
C8
Z11
Z10
L1
B2
C9
C14 C15
Z1 0.1500.050Microstrip
Z2 0.1200.034Microstrip
Z3 0.4600.034Microstrip
Z4 0.0730.034Microstrip
Z5 0.1200.250Microstrip
Z6 0.1280.250Microstrip
Z7 0.1450.250Microstrip
Z8 0.0270.250Microstrip
Z9 0.0660.034Microstrip
Z10 0.1100.034Microstrip
Z11 0.0270.180Microstrip
Z12 0.1630.180Microstrip
Z13 0.0680.180Microstrip
Z14 0.0770.180Microstrip
Z15 0.1150.180Microstrip
Z16 0.1600.034Microstrip
Z17 0.3600.034Microstrip
Z18 0.1050.034Microstrip
Z19 0.1500.050Microstrip
* Line length includes microstrip bends.
AFT09MS007NT1
21
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS — 760–860 MHz BROADBAND
REFERENCE CIRCUIT
740
Gps
f, FREQUENCY (MHz)
Figure 24. Power Gain, Output Power and Drain Efficiency versus
Frequency at a Constant Input Power — 7.5 V
10
19
6
65
60
55
10
9
8
D, DRAIN
EFFICIENCY (%)
D
Gps, POWER GAIN (dB)
17
13
760 780 820 840 860 880
50
Pout,OUTPUT
POWER (WATTS)
VDD =7.5Vdc,P
in =0.25W,I
DQ = 150 mA
Pout
18
16
15
14
800
12
11
45
7
0
0
VGS, GATE--SOURCE VOLTAGE (VOLTS)
Figure 25. Output Power versus Gate--Source Voltage
14
1234
10
2
8
4
Pout, OUTPUT POWER (WATTS)
f = 810 MHz
VDD =7.5Vdc,P
in =0.25W
0
0
Detail A
123
6
5
4
7
f = 810 MHz
Detail A
VDD =7.5Vdc
Pin =0.1W
Pout, OUTPUT POWER (WATTS)
VGS, GATE--SOURCE VOLTAGE (VOLTS)
6
12
VDD =7.5Vdc,P
in =0.1W
3
2
1
VDD =7.5Vdc
Pin =0.25W
0.5 1.5 2.5 3.5
Figure 26. Power Gain, Output Power and Drain
Efficiency versus Input Power and Frequency
Pin, INPUT POWER (WATTS)
Gps, POWER GAIN (dB)
12
15
14
00.6
Gps
6
30
0
3
18
17
16
21
60
75
0.1
Pout
VDD =7.5Vdc
IDQ = 150 mA
13
D
810 MHz
D, DRAIN
EFFICIENCY (%)
Pout,OUTPUT
POWER (WATTS)
f = 860 MHz
19
20
0.2 0.3 0.4 0.5
9
12
45
15
760 MHz
810 MHz 860 MHz
760 MHz
860 MHz
760 MHz
810 MHz
22
RF Device Data
Freescale Semiconductor, Inc.
AFT09MS007NT1
760–860 MHz BROADBAND REFERENCE CIRCUIT
Zo=2
f = 760 MHz
f = 860 MHz
Zload
Zsource
f = 760 MHz
f = 860 MHz
VDD =7.5Vdc,I
DQ = 150 mA, Pout =7W
f
MHz
Zsource
Zload
760 0.77 + j0.62 1.65 – j0.04
770 0.81 + j0.71 1.70 + j0.10
780 0.81 + j0.79 1.72 + j0.24
790 0.82 + j0.85 1.74 + j0.36
800 0.84 + j0.92 1.77 + j0.49
810 0.85 + j0.98 1.81 + j0.61
820 0.88 + j1.02 1.84 + j0.69
830 0.89 + j1.07 1.87 + 0.79
840 0.91 + 1.13 1.91 + j0.90
850 0.91 + j1.19 1.93 + j0.99
860 0.94 + j1.23 1.99 + j1.08
Zsource = Test circuit impedance as measured from
gate to ground.
Zload = Test circuit impedance as measured from
drain to ground.
Figure 27. Broadband Series Equivalent Source and Load Impedance — 760–860 MHz
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
Zsource Zload
50
50
AFT09MS007NT1
23
RF Device Data
Freescale Semiconductor, Inc.
Figure 28. PCB Pad Layout for PLD--1.5W
7.11
0.28
4.91
0.165
3.94
0.155
2.26
0.089
2.16
0.085
Solder Pad with
Thermal Via
Structure
Inches
(mm)
Figure 29. Product Marking
A9M07
NB
YYWW
24
RF Device Data
Freescale Semiconductor, Inc.
AFT09MS007NT1
PACKAGE DIMENSIONS
AFT09MS007NT1
25
RF Device Data
Freescale Semiconductor, Inc.
26
RF Device Data
Freescale Semiconductor, Inc.
AFT09MS007NT1
AFT09MS007NT1
27
RF Device Data
Freescale Semiconductor, Inc.
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following documents, software and tools to aid your design process.
Application Notes
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
Electromigration MTTF Calculator
RF High Power Model
.s2p File
Development Tools
Printed Circuit Boards
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the
Software & Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision Date Description
0June 2013 Initial Release of Data Sheet
1Apr. 2014 Wideband Performance tables 8, 12, 16: updated to include Pin for all reference circuits, pp. 1, 8, 13, 18
Tape and Reel information: corrected tape width information from 13--inch reel to 7--inch reel to reflect
actual reel size, p. 1
Maximum Ratings table: changed Total Device Dissipation value from 182 to 114 W to reflect performance
at 150C, p. 2
Fig. 4, MTTF versus Junction Temperature – CW: MTTF end temperature on graph changed to match
maximum operating junction temperature, p. 4
Table 6, Test Circuit Component Designations and Values: updated PCB description to reflect most current
board specifications from Rogers, p. 5
Added 350–470 MHz UHF Broadband Reference Circuit as follows:
-- Wideband Performance table, p. 1
-- Table 8, UHF Broadband Performance, p. 8
-- Table 9, Load Mismatch/Ruggedness, p. 8
-- Fig. 10, UHF Broadband Reference Circuit Component Layout, p. 9
-- Table 10, UHF Broadband Reference Circuit Component Designations and Values, p. 9
-- Fig. 11, UHF Broadband Reference Circuit Schematic, p. 10
-- Table 11, UHF Broadband Reference Circuit Microstrips, p. 10
-- Fig. 12, Power Gain, Drain Efficiency and Output Power versus Frequency at a Constant Input
Power, p. 11
-- Fig. 13, Output Power versus Gate--Source Voltage, p. 11
-- Fig. 14, Power Gain, Drain Efficiency and Output Power versus Input Power and Frequency, p. 11
-- Fig. 15, VHF Broadband Series Equivalent Source and Load Impedance, p. 12
Table 12. Load Mismatch/Ruggedness table: changed Test Voltage from 9.0 to 10.8 Vdc to reflect true
capability of the circuit, p. 13
28
RF Device Data
Freescale Semiconductor, Inc.
AFT09MS007NT1
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Document Number: AFT09MS007N
Rev. 1, 4/2014