2SK1316L - Renesas Electronics

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On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology

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April 1st, 2010

Renesas Electronics Corporation

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Regarding the change of names mentioned in the document, such as Hitachi

Electric and Hitachi XX, to Renesas Technology Corp.

The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas

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Renesas Technology Corp.

Customer Support Dept.

April 1, 2003

To all our customers

Cautions

Keep safety first in your circuit designs!

1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better

and more reliable, but th ere is always the possibility that trouble may occur with them. Trouble with

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Remember to give due consideration to safety when making your circuit designs, with appropriate

measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or

(iii) prevention against any malfunction or m ish ap.

Notes regar ding these materials

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circuit application examples contained in these materials.

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contained therein.

2SK1315(L)(S), 2SK1316(L)(S)

Silicon N-Channel MOS FET

ADE-208-1267 (Z)

1st. Edition

Mar. 2001

Application

High speed power switching

Features

• Low on-resistance

• High speed switching

• Low drive current

• No secondary breakdown

• Suitable for switching regulator, DC-DC converter and motor driver

Outline

LDPAK

1. Gate

2. Drain

3. Source

4. Drain

2SK1315(L)(S), 2SK1316(L)(S)

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage 2SK1315 VDSS 450 V

2SK1316 500

Gate to source voltage VGSS ±30 V

Drain current ID8A

Drain peak current ID(pulse)*132 A

Body to drain diode reverse drain current IDR 8A

Channel dissipation Pch*260 W

Channel temperature Tch 150 °C

Storage temperature Tstg –55 to +150 °C

Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%

2. Value at TC = 25°C

2SK1315(L)(S), 2SK1316(L)(S)

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test conditions

Drain to source 2SK1315 V(BR)DSS 450 — — V ID = 10 mA, VGS = 0

breakdown voltage 2SK1316 500

Gate to source breakdown

voltage V(BR)GSS ±30——V I

G = ±100 µA, VDS = 0

Gate to source leak current IGSS ——±10 µAV

GS = ±25 V, VDS = 0

Zero gate voltage 2SK1315 IDSS — — 250 µAV

DS = 360 V, VGS = 0

drain current 2SK1316 VDS = 400 V, VGS = 0

Gate to source cutoff voltage VGS(off) 2.0 — 3.0 V ID = 1 mA, VDS = 10 V

Static Drain to source 2SK1315 RDS(on) — 0.55 0.7 ΩID = 4 A, VGS = 10 V *1

on state resistance 2SK1316 — 0.60 0.8

Forward transfer admittance |yfs| 4.5 7.5 — S ID = 4 A, VDS = 10 V *1

Input capacitance Ciss — 1150 — pF VDS = 10 V, VGS = 0,

Output capacitance Coss — 340 — pF f = 1 MHz

Reverse transfer capacitance Crss — 55 — pF

Turn-on delay time td(on) — 17 — ns ID = 4 A, VGS = 10 V,

Rise time tr— 55 — ns RL = 7.5 Ω

Turn-off delay time td(off) — 100 — ns

Fall time tf—45—ns

Body to drain diode forward

voltage VDF — 0.9 — V IF = 8 A, VGS = 0

Body to drain diode reverse

recovery time trr — 350 — ns IF = 8 A, VGS = 0,

diF/dt = 100 A/µs

Note: 1. Pulse test

See characteristic curves of 2SK1159, 2SK1160.

2SK1315(L)(S), 2SK1316(L)(S)

0 50 100 150

Case Temperature TC (°C)

Channel Dissipation Pch (W)

Power vs. Temperature Derating

2SK1315(L)(S), 2SK1316(L)(S)

Package Dimensions

Hitachi Code

JEDEC

EIAJ

Mass

(reference value)

LDPAK (L)

—

1.4 g

10.2 ± 0.3

0.86

0.76 ± 0.1

2.54 ± 0.5

+ 0.2

– 0.1

1.2 ± 0.2

4.44 ± 0.2

1.3 ± 0.15

2.59 ± 0.2

0.4 ± 0.1

11.0 ± 0.5

8.6 ± 0.3

10.0

11.3 ± 0.5

+ 0.3

– 0.5

(1.4)

1.27 ± 0.2

As of January, 2001

Unit: mm

2SK1315(L)(S), 2SK1316(L)(S)

Hitachi Code

JEDEC

EIAJ

Mass

(reference value)

LDPAK (S)-(1)

—

1.3 g

10.2 ± 0.3

1.27 ± 0.2

(1.5)

(1.4)

8.6 ± 0.3

10.0 + 0.3

– 0.5

4.44 ± 0.21.3 ± 0.15

0.1 + 0.2

– 0.1

0.4 ± 0.1

0.86 + 0.2

– 0.1

2.54 ± 0.5

1.2 ± 0.2

3.0+ 0.3

– 0.5

(1.5)

7.8

6.6

2.2

1.7

7.8

7.0

As of January, 2001

Unit: mm

2SK1315(L)(S), 2SK1316(L)(S)

Hitachi Code

JEDEC

EIAJ

Mass

(reference value)

LDPAK (S)-(2)

—

1.35 g

10.2 ± 0.3

1.27 ± 0.2

(1.5)

(1.4)

8.6 ± 0.3

10.0 + 0.3

– 0.5

4.44 ± 0.21.3 ± 0.2

0.1 + 0.2

– 0.1

0.4 ± 0.1

0.86 + 0.2

– 0.1

2.54 ± 0.5

1.2 ± 0.2

5.0+ 0.3

– 0.5

(1.5)

7.8

6.6

2.2

1.7

7.8

7.0

As of January, 2001

Unit: mm

2SK1315(L)(S), 2SK1316(L)(S)

Cautions

1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,

Hitachi bears no responsibility for problems that may arise with third party’s rights, including

intellectual property rights, in connection with use of the information contained in this document.

2. Products and product specifications may be subject to change without notice. Confirm that you have

received the latest product standards or specifications before final design, purchase or use.

3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,

contact Hitachi’s sales office before using the product in an application that demands especially high

quality and reliability or where its failure or malfunction may directly threaten human life or cause risk

of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,

traffic, safety equipment or medical equipment for life support.

4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly

for maximum rating, operating supply voltage range, heat radiation characteristics, installation

conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used

beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable

failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-

safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other

consequential damage due to operation of the Hitachi product.

5. This product is not designed to be radiation resistant.

6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without

written approval from Hitachi.

7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor

products.

Hitachi, Ltd.

Semiconductor & Integrated Circuits.

Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan

Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109

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Hitachi Tower

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Tel : <65>-538-6533/538-8577

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URL : http://www.hitachi.com.sg

URL NorthAmerica : http://semiconductor.hitachi.com/

Europe : http://www.hitachi-eu.com/hel/ecg

Asia : http://sicapac.hitachi-asia.com

Japan : http://www.hitachi.co.jp/Sicd/indx.htm

Hitachi Asia Ltd.

(Taipei Branch Office)

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Tel : <886>-(2)-2718-3666

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Telex : 23222 HAS-TP

URL : http://www.hitachi.com.tw

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Hong Kong

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URL : http://www.hitachi.com.hk

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Electronic Components Group.

Whitebrook Park

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Maidenhead

Berkshire SL6 8YA, United Kingdom

Tel: <44> (1628) 585000

Fax: <44> (1628) 585160

Hitachi Europe GmbH

Electronic Components Group

Dornacher Straβe 3

D-85622 Feldkirchen, Munich

Germany

Tel: <49> (89) 9 9180-0

Fax: <49> (89) 9 29 30 00

Hitachi Semiconductor

(America) Inc.

179 East Tasman Drive,

San Jose,CA 95134

Tel: <1> (408) 433-1990

Fax: <1>(408) 433-0223

For further information write to:

Colophon 2.0