44 SILICON POWER TRANSISTORS CURRENT GAIN SATURATION VOLTAGES @ TYPE case | cso ceo eso hee Voce lc | Mees) Veeisy | 'c I NUMBER TYPE vet vqoy min, [max. | A v v A | A 20 AMP SILICON NPN SDT3204. _,: TO-61 100, 100 6.0 30 90 5.0 100 175 250 10.0 1,000 SDT5835 toes | 525 [525 |100 |15 100 |100 | 40 1.20 00 f.000 sotssx6 | Tos | 550 {550 |100 | 15 100 |100 | 40 1.20 hoo jr.ooo SDT5837 toes | 575 [575 [100 | 15 10.0 |100 | .40 {1.20 100 f1.000 spTs838 || To-*s ~=| 600 =|600 =| 100 =f 15 100 [100 | 40 |1.20 foo fi.000 sptsees | To-114 | 525 {525 |100 | 15 100 |100 |.40 1.20 foo f1.000 sptss6s | To-114 | 550 |550 |100 | 15 10.0 |100 |.40 41.20 oo fi.000 sptsse7 | To-114 | 575 [575 |100 | 15 100 |100 |.40 1.20 hoo f1.000 spTse68 | To-114 | 600 {600 |100 | 15 100 |100 |.40 |1.20 hoo 1.000 SDT8002 TO-63 80 60 8.0 |40 20 5.0 |100 |1.00 |1.70 oo 1.000 soTso03 | TO-63 | 100 80 8.0 |40 {120 50 {100 1.00 |1.70 foo }1.000 SDT8012. | TO-63 80 60 8.0 | 20 60 50 |100 |60 |150 hoo {1.000 spTs013 | _To-63 100 80 8.0 | 20 60 50 |100 |.60 150 [100 1.000 SDT8015 |: TO-63 80 60 8.0 |40 120 50 |100 | 60 1.50 [100 |i.000 spTso16 | TO-63 | 100 80 go |40 |i20 50 {100 |.60 (1.50 100 |i.000 sots04s | _T0-63 40 25 5.0 | 40 5.0 |10.0 |150 |200 100 |1.000 spT8070 ~|_T0-63 80 60 8.0 100 50 |100 | 60 |1.50 10.0 1.000 SDT8071 T0-63 | 100 80 8.0 foo 50 |100 | 60 /|1.50 {10.0 1.000 SDT8751 To-63 | 120 ~~ | 100 8.0 | 15 60 5.0 |100 |.60 |150 100 {1.000 SDT8752. | TO-63 | 140 | 120 g0 | 15 60 50 {100 | 60 |150 {100 1.000 sDT8753 | TO-63 | 170 | 150 8.0 | 15 60 50 |100 |.60 1.50 10.0 |1.000 soTs754 | To-63 | 200 | 180 8.0 6 | 15 60 5.0 |100 | .60 1.50 10.0 |1.000 sDT8755 | TO-63 | 120 | 100 8.0 | 30 90 5.0 |100 | 60 |150 100 |1.000 spTs756 =| TO-63 =| 140 ~ (| 120 8.0 | 30 30 50 |100 | 60 |1.50 |100 |1.000 SDT8757 To-63 | 170 | 150 8.0 | 30 90 50 |100 | 60 |1.50 10.0 |1.000 sDT8758 | T0-63 | 200 | 180 8.0 | 30 90 50 |100 | 60 |150 |10.0 |1.000 SDT8801 To-63 | 200 | 200 go | 15 60 50 |100 | .70 |1.40 10.0 1.000 spteso2 | To-63 | 225 | 225 8.0 | 15 60 5.0 |100 | .70 |1.40 |10.0 |1.000 SDT8803 | TO-63 | 250 | 250 80 | 15 60 50 {100 |.70 |140 j109 |1.000 sptss0a | To-63 | 275 | 275 80 = | 15 60 5.0 |100 | 70 |140 10.0 |1.000 sptss0s | To-63 | 300 | 300 8.0 6 | 15 60 50 |100 | .70 41.40 |10.0 |1.000 20 AMP SILICON PNP Observe () Negative Polarity 2N5678 TO-63 | 125 | 100 6.0 |, 25 75 5.0 10.0 2N5741 TO-3 60 60 5.0 | 20 80 50 |i00 150 |200 100 |1.000 2N5742 TO-3 100 | 100 5.0 | 20 B0 50 |100 1.50 |200 |10.0 |1.000 2N5743 TO-66 60 60 5.0 | 20 80 50 |100 1.50 {200 |10.0 [1.000 2N5744 To-66 | 100 | 100 5.0 | 20 80 5.0 |100 |150 |200 |10.0 |1.000 2N5883 TO-3 60 60 5.0 |20 100 40 |100 |1.00 /1.80 150 1.500 2N5884 TO-3 80 80 5.0 |20 ~ /|00 40 |100 |100 |180 150 |1.500 2N5958 To-61-1 | 100 | 100 30 |30 20 |100 |100 | 50 130 |s50 | 500 2N5960 TO-61 100 | 100 30 |30 120 |100 |100 | so |130 | 50 | 500 sDT3101_) TO-61-1 40 4o 60 =| 30 90 5.0 |100 41.75 |250 10.0 }1.000 sDT3102 | TO-61-1 60 60 6.0 | 30 90 50 |100 |1.75 |250 10.0 /1.000 SDT3103 | TO-61-1 80 80 6.0 | 30 90 5.0 |100 [1.75 |250 10.0 {1.000 sotsi0a | To-61-1 | 100 | 100 6.0 | 30 90 5.0 |100 |175 |250 100 {1.000 25 AMP SILICON NPN 2N3265 TO-63 150 90 7.0 20 55 2.0 15.0 75 1.60 15.0 1.200 2N3266 To-63 | 120 co | 70 | 20 | 30 | 30 | 15.0 | 120 130 15.0 |1.200 30 AMP SILICON NPN 2N4002 TO-63 | 100 80 8.0 |; 20 80 40 \150 1120 1180 30.0 4.000 2N4003 To-63 | 120 | 100 8.0 | 20 80 40 |150 |120 |180 |300 |4.000 2N5330 Tot | 150 | 90 go |40 /120 20 |100 |180 |180 [300 3.000 2N5331 To-63 | 150 | 90 80 |40 |120 20 |100 |180 |1.80 [300 3.000 2N5584 To-63 | 225 | 180 8.0 | 40 [120 30 |100 |150 |1.80 |200 [2.000 2N5671 TO-3 120 | 90 70 |20 |100 20 {150 | 75 |150 |150 [1.200 2N5672 TO-3 150 | 120 70 |20 ~ |100 20 |150 | 25 |150 [15.0 |1.200 2N5733 T0-63 | 100 80 5.0 |30 [300 20 |100 |120 [150 |200 |2000 2N5734 0-3 100 80 5.0 |30 [300 20 |100 |1.20 |150 |200 [2.000 42 SILICON POWER TRANSISTORS TYPICAL SWITCHING TIMES Ac t, ton t, t tote Voe le fy c/w EL TYPE ps ps ps ps ps Vv A MHz NUMBER 20 AMP SILICON NPN 2.00 .50 1.00 50 20 10.0 60.0 85 SDT3204 50 10.0 55 SDT5835 50 10.0 55 SDT5836 50 10.0 55 SDT5837 50 10.0 55 SDT5838 33 10.0 55 SDT5865 .33 10.0 55 SDT5866 .33 10.0 55 SDT5867 .33 10.0 55 SDT5868 1.00 30.0 86 SDT8002 1.00 30.0 86 SDT8003 1.00 30.0 86 SDT8012 1.00 30.0 86 SDT8013 1.00 30.0 86 SDT8015 1.00 30.0 86 SDT8016 1.00 30.0 86 SDT8045 1.00 30.0 86 SDT8070 1.00 30.0 86 SDT8071 1.00 20.0 94 SDT8751 1.00 20.0 94 SDT8752 1.00 20.0 94 SDT8753 1.00 20.0 94 SDT8754 1.00 20.0 94 SDT8755 1.00 20.0 94 SDT8756 1.00 20.0 94 SDT8757 1.00 20.0 94 SDT8758 1.00 20.0 94 SDT8801 1.00 20.0 94 SDT8802 1.00 20.0 94 SDT8803 1.00 20.0 94 SDT8804 1.00 20.0 94 SDT8805 20 AMP SILICON PNP Observe () Negative Polarity 1.00 50 1.50 .b0 20 10.0 25.0 68 2N5678 .65 40.0 63 2N5741 .65 40.0 63 2N5742 .25 40.0 63 2N5743 .25 40.0 63 2N5744 87 70 1.00 .80 30 10.0 40.0 65 2N5883 .87 .70 1.00 80 30 10.0 40.0 65 2N5884 1.00 .50 1.00 1.00 20 20.0 30.0 63 2N5958 1.00 -50 1.00 1.00 20 20.0 30.0 63 2N5960 2.00 50 .75 50 20 10.0 40.0 63 SDT3101 2.00 50 .75 .50 20 10.0 40.0 63 SDT3102 2.00 .50 .75 .50 20 10.0 40.0 63 SDT3193 2.00 .50 75 50 20 10.0 40.0 63 SDT3104 25 AMP SILICON NPN 1.00 50 1.50 50 30 15.0 30.0 86 2N3265 1.00 | 50 150 50 30 | 15.0 30.0 86 2N3266 30 AMP SILICON NPN 1.00 1.00 3.00 3.00 45 15.0 30.0 86 2N4002 1.00 1.00 3.00 3.00 45 15.0 30.0 86 2N4003 1.25 .35 1.25 1.25 20 10.0 20.0 44 2N5330 1.00 .35 1.25 1.25 20 10.0 20.0 44 2N5331 1.00 20.0 79 2N5584 1.25 .50 1.50 50 30 15.0 20.0 79 2N5671 1.25 .50 1.50 .50 30 15.0 20.0 79 2N5672 1.00 70 3.00 1.00 406 10.0 30.0 79 2N5733 1.00 70 3.00 1.00 40 10.0 30.0 86 2N8734